2304-9782, 2618-8686, 2405-7223 St. Petersburg Polytechnic University Journal: Physics and Mathematics 18 3.1 2025 1-319
CNF RUS 12-18 Romashkin Alexey romaleval@gmail.com 0000-0001-5063-1669 Rozanov Roman 0000-0002-4024-5411 Vishnevskiy Alexey Mitrofanova Anastasia mitrofanova.ae@phystech.edu Stebelkov Artem stebelkov@zntc.ru Nepomilueva Valeriya valeria.nepomilueva@yandex.ru Levin Denis vkn@miee.ru Svetikov Vladimir vl.svetikov@gmail.com National Research University of Electronic Technology Nevolin Vladimir vkn@miee.ru
Moscow, Russian Federation
 Comparison of the refractive index changes of nanolayers of amidated and carboxylated carbon nanotubes after adsorption of water and ammonia molecules Spray-deposited layers of amidated carbon nanotubes (ACNTs) were characterized using AFM, Raman scattering, and spectroscopic ellipsometry. The layer thickness, diameters, and band gap of ACNTs, as well as the changes in the refractive index (n) at 1319 nm and 1625 nm after H2O and NH3 adsorption in air and H2O in N2 were analyzed in comparison with carboxylated CNTs. Modeling the resonance peak shift due to changes in n for the ACNT-coated Si waveguide microring resonator after NH3 adsorption allows us to propose the use of such a CNT layer set for integrated optical sensors for gas recognition tasks. 10.18721/JPM.183.101 [621.793:621.315.5+544.164]::535.93::681.586 carbon nanotube ellipsometry integrated optics microring resonator sensor https://physmath.spbstu.ru/article/2025.82.1/
CNF RUS 19-22 Shandyba Nikita shandyba.nikita@gmail.com Eremenko Mikhail eryomenko@sfedu.ru 0000-0002-6762-2053 Southern Federal University Dukhan Denis duhan@sfedu.ru
Taganrog, Russian Federation
 Chernenko Natalia nchernenko@sfedu.ru Kirichenko Danil dankir@sfedu.ru 0009-0001-5183-5396 Kugaevsky Alexander National Research University ‘Higher School of Economics” Makhov Ivan imahov@hse.ru Kryzhanovskaya Natalia V. Natalia nkryzhanovskaya@hse.ru Balakirev Sergey sbalakirev@sfedu.ru Solodovnik Maxim solodovnikms@sfedu.ru Ordered GaAs NW growth on Si(111) substrates modified by two-step FIB treatment This work demonstrates, for the first time, the selective formation of ordered arrays of vertical GaAs nanowires on Si(111) with a native oxide layer using a two-step pre-treatment of the substrate surface with a focused Ga-ion beam. Based on our previous studies, we show that modifying the substrate through a two-step protocol — first applying a continuous surface treatment with low doses (up to 1×10–13 C/µm2), followed by spot treatment with medium doses (from 1×10–13 to 1×10–12 C/µm2) — effectively suppresses parasitic growth and enables nanowire formation at defined surface locations. Furthermore, adjusting the spacing between ion implantation points (from 0.5 to 5 um) allows precise control over the pitch of the nanowire array. By optimizing dose values, we achieve the formation of single, free-standing, vertically oriented nanowires at each ion beam impact site. The study of optical properties of nanowire arrays reveals their high structural quality, as evidenced by intense photoluminescence of GaAs up to room temperatures. 10.18721/JPM.183.102 538.975 silicon focused ion beam molecular beam epitaxy nanowires III-V nanopatterning site-controlled https://physmath.spbstu.ru/article/2025.82.2/
CNF RUS 23-29 Babenko Sofiya sofi.bb@yandex.ru Bryleva Anna anniebryleva@yandex.ru Kanaev Kirill kir-kv2005@mail.ru Kudryavtsev Oleg oleg6565657@gmail.com Nigmatullina Razalina razalina.n2004@gmail.com Rayanova Kamilla raanovakamilla@gmail.com Sudakova Alexandra asudakova12@gmail.com Trukhanova Mariya trukhanova@physics.msu.ru Komarov Ivan master_kom@mail.ru Thin reduced graphene oxide based films for nanoelectronics and sensors Formation of new devices of flexible and organic electronics requires new materials. One of the perspective classes of materials is graphene derivatives. To enhance wettability of polymer substrates we used multicomponent graphene oxide suspension with further reduction of obtained films with laser irradiation. We used UV and IR lasers for local reduction of these films to form transistors and biosensors. Graphene oxide film from 0.93 mg/ml suspension with lacquer thinner was successfully deposited and reduced for BGTE transistor formation. Reduced graphene oxide film acted as an n-type semiconductor with 2–8×10−3 cm2/V·s−1 mobility. 10.18721/JPM.183.103 620.3 contact angle dispersion medium graphene oxide reduced graphene oxide thin films transistor https://physmath.spbstu.ru/article/2025.82.3/
CNF RUS 30-35 0009-0008-4344-4863 Alferov University Nikolaeva Aleksandra nikalex2000@bk.ru
St. Petersburg, Russian Federation
 Center for Photonics and 2D Materials Anikina Maria mari.a.nikina@yandex.ru 0000-0002-3469-5897 Alferov University Kondratev Valeriy kvm_96@mail.ru
St. Petersburg, Russian Federation
 Alferov University Sharov Vladislav vl_sharov@mail.ru
St. Petersburg, Russian Federation
 Moscow Institute of Physics and Technology (MIPT) Barulina Elena e.barulina@rqc.ru Gridchin Vladislav gridchinvo@gmail.com St. Petersburg State University Khrebtov Artem khrebtovart@mail.ru
St. Petersburg, Russian Federation
 0000-0002-5376-5555 Far Eastern Federal University Kuchmizhak Aleksandr alex.iacp.dvo@mail.ru 0000-0001-7223-7232 Moscow Institute of Physics and Technology (National Research University) Bolshakov Alexey acr1235@mail.ru
Moscow, Russian Federation
 Hybrid emitters based on two-dimensional WSe2 and ordered plasmonic nanobumps Two-dimensional transition metal dichalcogenides (TMDs), particularly tungsten diselenide (WSe2), exhibit exceptional optoelectronic properties, including strong light-matter interactions and tunable exciton behavior, making them promising for nanophotonic applications. This work investigates a hybrid system comprising a WSe2 monolayer integrated with a plasmonic metasurface of Au-nanobumps to enhance photoluminescence (PL) through exciton-plasmon coupling and strain-induced bandgap modulation. The WSe2 monolayers were mechanically exfoliated and transferred onto a laser-patterned Au-nanobump array fabricated via femtosecond laser printing, offering a scalable alternative to conventional lithography. Optical characterization showed a threefold enhancement of photoluminescence intensity of WSe2 monolayer lying on a nanobump compared to WSe2 on a flat gold substrate, what attributed to localized plasmon-exciton interactions and strain effects. The study demonstrates a cost-effective, lithography-free approach for tailoring hybrid TMD-plasmonic systems, enabling precise control over optical properties for next-generation optoelectronic devices. 10.18721/JPM.183.104 535.372 WSe2 emitter nanobump photoluminescence https://physmath.spbstu.ru/article/2025.82.4/
CNF RUS 36-39 Subbotin Evgenii jons712@mail.ru Kozlov Aleksei kozlov.ag@dvfu.ru 0000-0001-8726-5615 Institute of Automation and Control Processes FEB RAS Pavlov Dmitrii pavlov.dim@mail.ru 0009-0007-5206-5753 Lisenkov Oleg 0009-0000-4799-002X Udilov Andrei Goroshko Dmitrii goroshko@iacp.dvo.ru Institute of Nanotechnologies of Microelectronics of the RAS Poliakov Maxim
Moscow, Russian Federation
 Volkova Lidiya lidiya.volkova.96@mail.ru 0009-0008-0181-8994 Prokopeva Glikeriya 0000-0002-8726-9832 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Chernev Igor igor_chernev7@mail.ru 0009-0007-4827-2653 Khoroshilov Dmitry Synthesis of Mg2Si-based core-shell nanowires In this work, we proposed the method for synthesis of nanowires with Mg2Si/Sibased core-shell heterostructure. Silicon nanowires acting as a source of silicon for the silicification reaction were obtained by well-studied metal-stimulated chemical etching of silicon with orientation (100) doped with boron, with a resistivity of 1–10 Ω×cm. A 30 nm thick gold film with an adhesive titanium sublayer 1.5 nm thick was used as the catalytic metal. The etched nanowires had a height of ~10 microns and a diameter of 1.5 microns. The Mg2Si shell was formed using the solid-phase epitaxy method under ultrahigh vacuum conditions. The thickness of the silicide shell was 400–600 nm on the side surfaces of the nanowires. 10.18721/JPM.183.105 538.9 silicon magnesium silicide epitaxy nanowires core-shell thermoelectricity MACE SEM EDX TEM https://physmath.spbstu.ru/article/2025.82.5/
CNF RUS 40-43 Subbotin Evgenii jons712@mail.ru 0009-0000-4799-002X Udilov Andrei 0009-0008-0181-8994 Prokopeva Glikeriya Goroshko Dmitrii goroshko@iacp.dvo.ru Kozlov Aleksei kozlov.ag@dvfu.ru 0000-0002-8726-9832 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Chernev Igor igor_chernev7@mail.ru 0009-0007-5206-5753 Lisenkov Oleg 0009-0007-4827-2653 Khoroshilov Dmitry 0009-0002-7285-3224 Sinotova Sofia 0000-0003-4127-2988 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Galkin Nikolay galkin@iacp.dvo.ru Influence of the growth regime on the transport properties of doped Mg2Si films In this work, we studied transport properties of the doped Mg2Si film on silicon substrate. The ~1 µm-thickness film was synthesized by the solid phase epitaxy method. Well-proven Ag was chosen as a dopant. At room temperature, the resistivity was 2 Ω×cm, the mobility was 327 cm2/(V×s), the density was 9.3×1015 cm−3. We established that using the solid phase epitaxy with the low temperature annealing regime led to mixed electron conductivity of the doped Mg2Si:Ag film due to the substitution of Si-site by Ag. The activation energy of the donor level is 24 meV. 10.18721/JPM.183.106 538.9 silicon magnesium silicide solid phase epitaxy silver Hall-measurements SEM EDX https://physmath.spbstu.ru/article/2025.82.6/
CNF RUS 44-47 0000-0002-1744-5976 Alferov University, RAS Terpitskiy Aleksey terpiczkij@mail.ru Alferov University Reshetov Ilya reshetov_iv@spbstu.ru Alferov University Scherbak Sergey sergeygtn@yandex.ru Alferov University Lipovskii Andrey lipovskii@mail.ru Visualization of electric field of e-beam-formed charge patterns in glass We have formed a given pattern of the second order optical nonlinearity in the subsurface region of a glass by electron irradiation. The nonlinearity was induced by the electric field of the electrons captured by the glass. Formed structure consisted of periodic “strips” and, being irradiated normally to the glass surface with an IR laser, generated the second harmonic (SH) radiation pattern similar to one of a phase diffraction grating. The pattern presented the results of an interference of the SH waves generated by nonlinear strips. Mapping of the SH radiation pattern in orthogonal polarizations of the fundamental laser beam allowed concluding about the distribution of the electric field of electrons captured in the glass. 10.18721/JPM.183.107 538.958 second harmonic generation glass e-beam lithography grating structure https://physmath.spbstu.ru/article/2025.82.7/
CNF RUS 48-52 0000-0003-2498-1192 I.N. Ulyanov Chuvashia State University Lepaev Alexander
Cheboksary, Russian Federation
 0000-0002-9723-5652 I.N. Ulyanov Chuvashia State University Ksenofontov Sergey
Cheboksary, Russian Federation
 0000-0001-8432-5635 I.N. Ulyanov Chuvashia State University Vasilyeva Olga
Cheboksary, Russian Federation
 0000-0002-9810-6932 Kudryavtsev Andrey Influence of physical effects on the structure of soot particles of hydrocarbon flames The structure of the diffusion flame of TC-1 kerosene has been studied. A film of pyrolytic soot was obtained using the sampling method, and the structural changes of this film under thermal exposure were studied. A new carbon structure – glass carbon was obtained as a result of laser irradiation of highly dispersed carbon black. The mechanism of bubble formation in the glassy carbon structure has been established, and the latent heat of carbon “melting” equal to 2110 J/kg has been determined. 10.18721/JPM.183.108 536.46 flame soot carbon pyrolysis IR-spectroscopy https://physmath.spbstu.ru/article/2025.82.8/
CNF RUS 53-58 0000-0002-8726-9832 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Chernev Igor igor_chernev7@mail.ru Subbotin Evgenii jons712@mail.ru Kozlov Aleksei kozlov.ag@dvfu.ru 0009-0002-7285-3224 Sinotova Sofia 0009-0006-2778-8143 Prikhodchenko Alena 0000-0003-0436-0612 Lembikov Aleksei 0009-0008-0181-8994 Prokopeva Glikeriya Goroshko Dmitrii goroshko@iacp.dvo.ru 0000-0003-4127-2988 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Galkin Nikolay galkin@iacp.dvo.ru Si-based photodetector with an Mg2Si contact layer for SWIR range Mg2Si film ~2.3 μm was synthesized by reactive deposition Mg on Si(111) at 340 °C in UHV. The photoresponse of backlighted Al/Si/Mg2Si Schottky structure represents the bell-shaped curve with the peak at 1045 nm and intensity 29 mA/W, 105 mA/W and 195 mA/W under the 0 V, 1 V and 5 V bias respectively with FWHM ~130 nm. 10.18721/JPM.183.109 539.23+539.25+539.26+537.32+537.9 magnesium silicide silicon films epitaxy reactive epitaxy crystal structure microscopy photoresponse https://physmath.spbstu.ru/article/2025.82.9/
CNF RUS 59-64 Voronezh State University of Engineering Technology Kim Kseniya kmkseniya@yandex.ru
Voronezh, Russian Federation
 0009-0005-4323-9163 Chernenko Sergey sergey.x173@mail.ru Voronezh State University of Engineering Technology Niftaliev Sabukhi sabukhi@gmail.com
Voronezh, Russian Federation
 0009-0000-2880-8958 Frolova Vera Voronezh State University Grechkina Margarita grechkina_m@mail.ru
Voronezh, Russian Federation
 0000-0002-9850-8341 Grigoryan Gevorg Belokopytov Dmitry Chukavin Andrey andrey_chukawin@mail.ru Voronezh State University of Engineering Technology Lenshin Alexander lenshinas@mail.ru
Voronezh, Russian Federation
 Copper deposition onto porous silicon by vacuum thermal evaporation The morphology and composition of porous silicon samples with thermally evaporated copper coatings were studied using atomic-force microscopy (AFM), infrared spectroscopy (IR), and X-ray photoelectron spectroscopy (XPS). Our research demonstrated that nanocomposites obtained with this method involve both metallic copper and copper oxide. The results indicate that vacuum thermal deposition of copper promotes efficient penetration of this element into the porous silicon structure and retards the oxidation process of the porous layer during long-term storage in the atmosphere. 10.18721/JPM.183.110 546.3-126:544.2 porous silicon composites thin films copper vacuum-thermal sputtering https://physmath.spbstu.ru/article/2025.82.10/
CNF RUS 65-70 National Research University of Electronic Technology Vasilevsky Pavel pavelvasilevs@yandex.ru
Moscow, Russian Federation
 National Research University of Electronic Technology Savelyev Mikhail nanonlin@yandex.ru
Moscow, Russian Federation
 National Research University of Electronic Technology Gerasimenko Alexander gerasimenko@bms.zone
Moscow, Russian Federation
 Nonlinear absorption of laser radiation in the carbon nanotubes dispersions in ultraviolet and visible ranges Carbon nanotubes have unique properties and applications in various fields such as nonlinear optics, flexible electronics, biocompatible composites for tissue repair, etc. The properties of carbon nanotubes can be tuned when exposed to laser radiation. The manifestation of nonlinear absorption properties can improve the methods of formation and processing of materials containing carbon nanotubes. In this work, the properties of nonlinear absorption in the ultraviolet (355 nm) and visible (532 nm) ranges depending on the type of carbon nanotubes and the type of solvent are investigated. The study was performed using the Z-scan method with pulsed exposure (pulse duration is 20 ns). It was shown that the homogeneity of the carbon nanotubes distribution in a liquid medium affects the nonlinear absorption of laser radiation. Single-walled carbon nanotubes in dimethylformamide showed the best nonlinear absorption coefficient and the lowest threshold fluence when the interaction of the medium with laser radiation becomes nonlinear. The demonstrated laser stability of nanotubes also makes them a promising material for laser radiation limiters and nonlinear optical switchers. 10.18721/JPM.183.111 535.015 laser radiation nonlinear absorption carbon nanotubes UV range visible range nanosecond pulses Z-scan https://physmath.spbstu.ru/article/2025.82.11/
CNF RUS 71-76 0000-0002-5760-1523 Sosunov Aleksei 0000-0002-3110-668X Petukhov Igor 0000-0002-8267-0168 Kornilicyn Andrey 0000-0003-3053-1892 Mololkin Anatoliy 0009-0006-1447-3310 Umylin Vladislav 0000-0003-1077-7975 Fakhrtdinov Rashid 0000-0002-6040-6403 Kulikov Anton Annealed proton-exchange waveguides in mixed lithium niobate-tantalate solid solutions Annealed proton-exchange (APE) waveguides in lithium niobate are widely used in integrated photonics for navigation, telecommunications and electric field sensors. In this paper, we analyze the characteristics of planar APE waveguides in new mixed single crystals of lithium niobate-tantalate solid solution by various methods (prism coupling, XRD and IR spectroscopy). The elemental composition (ratio Nb/Ta) of Z-cut mixed lithium niobate-tantalate samples gives a good uniform distribution over the all-surface area by X-ray fluorescence method. APE waveguides in mixed lithium niobate-tantalate single crystals are characterized by a lower value of refractive index increment due to Ta atoms and higher proton diffusion coefficients due to lattice disordering. High diffusion coefficients provide a deeper APE waveguide layer and rapid recovery of the crystal lattice during post-exchange annealing. These results expand the understanding of the proton exchange process in mixed lithium niobate-tantalate solid solutions for the creation of single-mode APE waveguides. 10.18721/JPM.183.112 535.3, 544.015 optical materials lithium niobate-tantalate APE waveguides https://physmath.spbstu.ru/article/2025.82.12/
CNF RUS 77-80 0009-0005-0782-8569 Moroz Alexey 0000-0001-9602-9868 Chistikov Ilia 0000-0003-3741-3936 Ioffe Physical Technical Institute of the Russian Academy of Sciences Melehin Vladimir melekhin1952@gmail.com Peter the Great St. Petersburg Polytechnic University Alferov University Kaasik Vladimir vkaasik@yandex.ru Thermal poling of photosensitive glasses containing Ag+ and Ce3+ ions We present the results on the crystallization of photo-thermo-refractive glass under thermal poling and ultraviolet (UV) irradiation followed by heat treatment. Poling was carried out at a temperature of 300 °C and a voltage of 400−1000 V. A femtosecond laser with a wavelength of 343 nm was used as UV sources. The studies were carried out using optical microscopy, optical absorption and Raman scattering. It is shown that in the subanode layer of the glass after poling, subsequent UV irradiation and heat treatment, crystallization of glass is completely suppressed. After the poling and the heat treatment cesium ions are also recharged in this layer Ce3+ → Ce4+. The mechanisms of the crystallization suppression and ion recharge in the poled region of the glass are discussed. 10.18721/JPM.183.113 53.043 photosensitive glass thermal poling UV irradiation heat treatment crystallization https://physmath.spbstu.ru/article/2025.82.13/
CNF RUS 81-84 0000-0002-3469-5897 Alferov University Kondratev Valeriy kvm_96@mail.ru
St. Petersburg, Russian Federation
 0000-0001-6869-1213 Alferov University Vyacheslavova Ekaterina cate.viacheslavova@yandex.ru 0000-0002-4110-1647 Shugabaev Talgat talgashugabaev@mail.ru 0000-0001-7223-7232 Moscow Institute of Physics and Technology (National Research University) Bolshakov Alexey acr1235@mail.ru
Moscow, Russian Federation
 Modification of silicon nanowires with silver nanoparticles for gas sensor applications This study focuses on methods to modify the adsorption properties of silicon nanowires produced through plasma cryogenic etching. This research demonstrates the potential for synthesizing a nanocomposite composed of silicon nanowires and silver nanoparticles, which can be utilized to develop highly efficient gas sensors. 10.18721/JPM.183.114 538.91 nanowires selective adsorption sensor electrical impedance spectroscopy https://physmath.spbstu.ru/article/2025.82.14/
CNF RUS 85-90 0000-0002-5183-6807 Vasilevskaya Yulia 0009-0006-1375-6191 Chumachenko Julia Aggregation kinetics of silver nanoparticles ensembles in sub-percolating state and its impact on memristive behaviour The effect of coalescence and aggregation processes on the memristive properties of silver nanoparticle assemblies has been investigated. Nanoparticles were prepared by vacuum-thermal evaporation on silicon substrates with gold electrodes and quartz glasses for morphological control. The structure of the samples and size distribution of nanoparticles were studied using scanning electron microscopy (SEM) and UV-visible spectroscopy. Memristive properties were estimated using cyclic voltammetry. Due to Ostwald ripening and an increase in average nanoparticle size, the operating voltage required to switch the system into the memristive state decreased, while the conductivity dynamics changed. These findings are useful for ensuring the stability of memristive devices based on silver nanoparticle assemblies. 10.18721/JPM.183.115 539.219.3 coalescence silver nanoparticles surface plasmon resonance memristive dynamics surface diffusion https://physmath.spbstu.ru/article/2025.82.15/
CNF RUS 91-94 0000-0002-4513-6345 ITMO University Ruzhevich Maxim max.ruzhevich@niuitmo.ru 0009-0007-1056-5100 ITMO University Kirilenko Iaroslav idkirilenko@itmo.ru St. Petersburg Electrotechnical University "LETI" Chumanov Ivan chumanov2000@yandex.ru
St. Petersburg, Russian Federation
 St. Petersburg Electrotechnical University "LETI" Firsov Dmitrii d.d.firsov@gmail.com
St. Petersburg, Russian Federation
 St. Petersburg Electrotechnical University "LETI" Komkov Oleg oleg_sergeevich@mail.ru
St. Petersburg, Russian Federation
 Ioffe Institute Mynbaev Karim mynkad@mail.ioffe.ru 0000-0002-9989-3843 Ioffe Institute Romanov Viacheslav romanovvv@mail.ioffe.ru Ioffe Institute Moiseev Konstantin mkd@iropt2.ioffe.ru
St. Petersburg, Russian Federation
 Optical studies of InAs/InAsSb/InAsSbP heterostructures Fourier-transform infrared photoluminescence and photoreflectance were used to study the optical properties of InAs/InAsSbP and InAs/InAsSb/InAsSbP heterostructures. A strong dependence of chemical composition and optical quality of the top InAsSbP barrier layers on the composition of the material on which the layer was grown has been established. 10.18721/JPM.183.116 538.91 heterostructures InAsSbP photoluminescence photoreflectance https://physmath.spbstu.ru/article/2025.82.16/
CNF RUS 95-98 0009-0004-1245-1391 Voitovich Veronica National Research University ‘Higher School of Economics” Makhov Ivan imahov@hse.ru ITMO University Andryushkin Vladislav vvandriushkin@itmo.ru
St. Petersburg, Russian Federation
 Kopytov Pavel kopytovpe@itmo.ru 0009-0001-3683-5558 ITMO University Papylev Denis dspapylev@itmo.ru
St. Petersburg, Russian Federation
 Kryzhanovskaya Natalia V. Natalia nkryzhanovskaya@hse.ru 35379962200 Ioffe Physical Technical Institute of the Russian Academy of Sciences Zhukov Alexey zhukov@beam.ioffe.ru
Russia, 194021, St.Petersburg, Polytechnicheskaya 26
 Photoluminescence of InGaAs/InAlAs short-period superlattices grown on InP substrate The photoluminescence spectra of short-period InGaAs/InAlAs superlattices emitting in the 1.3 µm spectral range were investigated in the wide range of pumping powers at the temperatures of 5−300 K. The 5 K photoluminescence spectra consisted of luminescence bands associated with radiative electron-hole recombination in superlattices as well as in the InP substrate and buffer layers of heterostructures. Spectral positions of superlattice emission bands are in a good agreement with calculated values obtained with transfer matrix method for all the samples. The temperature evolution of emission spectra was investigated as well. 10.18721/JPM.183.117 535.3 superlattice photoluminescence VCSEL temperature quenching https://physmath.spbstu.ru/article/2025.82.17/
CNF RUS 99-104 Voronezh State University of Engineering Technology Lenshin Alexander lenshinas@mail.ru
Voronezh, Russian Federation
 0000-0003-0123-9526 Polkovnikova Yulia Voronezh State University of Engineering Technology Chernousova Olga byolval@mail.ru
Voronezh, Russian Federation
 0009-0000-2880-8958 Frolova Vera Domashevskaya Evelina Composition and properties of porous silicon nanoparticles with deposited cinnarizine As a result of our work samples of nanopowders of porous silicon with the deposited cinnarizine were obtained and technique of the chemical deposition of cinnarizine into the porous layer was elaborated. The obtained structures of porous silicon can be used for delivery of various therapeutic agents starting from small molecules of the preparations up to the large peptides/protein therapeutic agents while controlling composition of the surface and morphology of the porous layer. Nanopowder of porous silicon was obtained by mechanical and ultrasound grinding of the porous silicon wafers. Using transmission electron microscopy, infrared and ultraviolet spectroscopy morphology and composition of the porous silicon samples were studied. According to the results of transmission electron microscopy (TEM) a presence of both crystalline and amorphous phases was determined. Chemical composition and types of the bonds in the porous silicon layer was studied according to the data of infrared (IR) spectroscopy. The data on ultraviolet (UV) allowed to determine the energy of the possible direct transitions in nanostructures. Adsorption and desorption processes in nanostructures were studied. 10.18721/JPM.183.118 538.9 mesoporous silicon nanopowders nanopowders spectroscopy cinnarizine systems of drug delivery https://physmath.spbstu.ru/article/2025.82.18/
CNF RUS 105-109 0000-0002-8319-1492 Pozdniakov Stepan 0009-0009-5076-6470 Matveeva Elizaveta 0009-0009-6600-0592 Li Shixiong 0000-0001-9923-3995 Sandzhieva Maria 0000-0002-9257-6183 Makarov Sergey s.makarov@metalab.ifmo.ru Enhanced optical performance of FAPbBr3-MOF composite films Metal halide perovskite nanocrystals have emerged as excellent candidate materials for various optoelectronic applications due to their distinguished optoelectronic properties. However, suffering from instability under environmental conditions such as humidity, temperature and ultraviolet radiation restricts its further development and larger-scale application. In this study, we present a one-step method for fabricating composite thin films of formamidinium lead bromide and a lead-based metal-organic framework with enhanced stability. Meanwhile, the obtained composite films exhibited a low amplified spontaneous emission threshold of 12.3 μJ·cm−2 enhancing their potential for efficient optoelectronic applications, including light-emitting devices and lasers. 10.18721/JPM.183.119 538.975 perovskite metal-organic framework composites enhanced spontaneous emission https://physmath.spbstu.ru/article/2025.82.19/
CNF RUS 110-113 0009-0007-3942-7908 Kan Gennadiy gennadiykang@gmail.com 0009-0009-4341-4346 Cui Zhihao 0000-0002-1744-5976 Alferov University, RAS Terpitskiy Aleksey terpiczkij@mail.ru Alferov University Scherbak Sergey sergeygtn@yandex.ru Peter the Great St. Petersburg Polytechnic University Zhurikhina Valentina zhurikhina@mail.edu.ioffe.ru Analysis of nonlinear susceptibility in ion-exchanged glass We demonstrate that electric-field-assisted ion-exchange in glass allows one to obtain a structure with close to a step-like concentration and conductivity profiles. Application of DC voltage to the ion-exchanged glass results in charge accumulation. The electric field induces symmetry breaking and provides quadratic optical susceptibility in the glass. Nonlinear optical properties of modified glass are studied using the Maker fringe technique. Particularly, we study the influence of the nonlinear susceptibility tensor components ratio \(χ_{zxx} : χ_{zzz} \) on resulting characteristics. Comparing modeling and experiments, we deduced the ratio 1:3 which corresponds to Kleinman symmetry of isotropic materials. 10.18721/JPM.183.120 535.016 glass ion-exchange second harmonic generation EFISH phenomenon phase-matching https://physmath.spbstu.ru/article/2025.82.20/
CNF RUS 114-118 0000-0002-7829-5326 Adamovich Artem Golovanov Victor 0000-0009-6999-9030 Makhmud-Akhunov Marat 0000-0002-8612-6258 Yavtushenko Igor Soloviev Andrei asus_work@mail.ru Bodnarsky Dmitry Сapacitive properties of composite electrodes based on polyaniline and nanoporous titanium oxide obtained by plasma-electrolytic oxidation The capacitive characteristics of composite electrodes based on nanoporous titanium oxide obtained by plasma electrolytic oxidation are considered. It is shown that the specific capacitance of a multilayer supercapacitor based on formed titanium oxide and polyaniline (PANI) is 10 mF/cm2. The resulting oxide layers have a crystalline structure, providing minimal faradaic resistance, which is promising for use in electrochemical double-layer supercapacitors. 10.18721/JPM.183.121 537.9 titanium electrolyte plasma nanoporous oxide polyaniline supercapacitor https://physmath.spbstu.ru/article/2025.82.21/
CNF RUS 119-124 0000-0001-7499-0578 Institute of High Current Electronics, Siberian Branch of RAS Kozhevnikov Vasily Vasily.Y.Kozhevnikov@ieee.org Kozyrev Andrey kozyrev@to.hcei.tsc.ru The phenomenon of “anomalous electrons” in pulsed high-current vacuum discharges This paper presents the first comprehensive theoretical explanation, based on computational physical kinetics, for the phenomenon of electrons attaining energies exceeding the amplitude of the applied voltage (in eV units) in a vacuum diode. The proposed theory thoroughly elucidates the existence of so-called “anomalous electrons”, detailing their generation dynamics and underlying mechanisms. Additionally, the work calculates the integral energy spectra of these anomalous electrons in a high-current pulsed vacuum discharge and quantifies their contribution to the total current flow. The main tool used for numerical calculations is the latest meshless method for solving Vlasov-Poisson equation systems, known as the numerical flow iteration method (NuFI). The findings provide critical insights into non-equilibrium electron behaviour under extreme conditions, advancing the understanding of electron transport in vacuum-based high-power devices. 10.18721/JPM.183.122 533.9.02 vacuum electronics anomalous electrons physical kinetics https://physmath.spbstu.ru/article/2025.82.22/
CNF RUS 125-128 0009-0005-4578-7550 Masyutin Dmitriy 0009-0004-6609-9741 Rudnev Artem 0000-0003-3686-935X National Research University “Higher School of Economics” (St. Petersburg branch) Moiseev Eduard emoiseev@hse.ru Vainilovich Alexey a.vainilovich@ifanbel.bas-net.by Lutsenko Eugeniy e.lutsenko@ifanbel.bas-net.by Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS Tsatsulnikov Andrey andrew@beam.ioffe.ru Ioffe Institute Sakharov Alexey val@beam.ioffe.rssi.ru Arteev Dmitri ArteevDS@mail.ioffe.ru Ioffe Institute Nikolaev Andrei Aen@mail.ioffe.ru 0000-0002-2313-9051 Pivovarova Antonina Ioffe Institute Zavarin Evgenii EZavarin@mail.ioffe.ru Il'inskaya Natalya Natalya.Ilynskaya@mail.ioffe.ru Ioffe Institute Markov Lev
St. Petersburg, Russian Federation
 Ioffe Institute Smirnova Irina irina@quantum.ioffe.ru
St. Petersburg, Russian Federation
 Kryzhanovskaya Natalia V. Natalia nkryzhanovskaya@hse.ru 35379962200 Ioffe Physical Technical Institute of the Russian Academy of Sciences Zhukov Alexey zhukov@beam.ioffe.ru
Russia, 194021, St.Petersburg, Polytechnicheskaya 26
 Investigation of microdisks lasers with an InGaN/GaN quantum well in the active region at elevated temperatures In this work, we present results on high-temperature operation microdisk lasers with an active region based on InGaN/GaN quantum wells. The diameter of the microdisks was 5 μm. The photoluminescence spectra measured in the temperature range from 25 °С to 100 °С. The temperature stability lasing is demonstrated. 10.18721/JPM.183.123 535.372:621.315.592 GaN InGaN/GaN quantum wells microdisk resonator WGM https://physmath.spbstu.ru/article/2025.82.23/
CNF RUS 129-134 0000-0002-9733-751X Shipenok Xenia 0009-0007-6517-9784 Mazhikenova Aliya Glukhovskoy Evgeny Glukhovskoy@gmail.com Shipovskaya Anna Shipovskayaab@yandex.ru Surface tension measurement of chitosan aspartate nanoparticle dispersions by a modified Wilhelmy method A modification of the Wilhelmy method is proposed for measuring the surface tension of polymer nanoparticle dispersions, whose key feature is the static nature of the Wilhelmy plate when measuring the surface tension force. Tests on the example of nanostructured chitosan aspartate showed satisfactory accuracy of the modified method in estimating the surface activity of nanodispersions in a wide range of polymer concentrations. The concentration dependence of the surface tension of the dispersion of chitosan aspartate nanoparticles was obtained, and concentration ranges with different surface effects were outlined. The contribution of individual components used in obtaining nanoparticles to the surface activity of the nanodispersion was estimated. 10.18721/JPM.183.124 547.458:[544+532.61] chitosan L- and D-aspartic acid nanoparticles surface tension https://physmath.spbstu.ru/article/2025.82.24/
CNF RUS 135-138 0000-0002-6342-8448 Vasin Sergei 0009-0007-9634-0745 Kuzmin Nikolai 0000-0003-4854-2813 Sergeev Viacheslav sva@ulstu.ru 0000-0001-6541-2637 Buzaeva Mariya Study of thermal conductivity of polymer materials with carbon nanotubes using laser flash method The thermal conductivity of nanocomposite polymer materials based on polyvinyl alcohol and epoxy resin with the inclusion of multi-walled carbon nanotubes was studied using the laser flash method. The possibility of using the laser flash method to determine thermal conductivity in thin-film polymer materials is demonstrated and its features are revealed. It has been shown that the presence of carbon nanotubes in polymer matrices leads to an increase in the coefficients of thermal diffusivity and thermal conductivity by several times compared to pure polymer materials. 10.18721/JPM.183.125 539.23 carbon nanotubes polymers thermal conductivity laser flash method https://physmath.spbstu.ru/article/2025.82.25/
CNF RUS 139-142 Gridchin Vladislav gridchinvo@gmail.com Ioffe Institute Mintairov Alexander amintairov@mail.ioffe.ru
St. Petersburg, Russian Federation
 0000-0002-4110-1647 Shugabaev Talgat talgashugabaev@mail.ru Axenov Valerii axenov.v@gmail.com Ioffe Institute Vlasov Alexei vlasov@scell.ioffe.ru
St. Petersburg, Russian Federation
 Lendyashova Vera erilerican@gmail.com Kotlyar Konstantin konstantin21kt@gmail.com Eliseev Ilya St. Petersburg State University Khrebtov Artem khrebtovart@mail.ru
St. Petersburg, Russian Federation
 Reznik Rodion moment92@mail.ru Ioffe Institute Davydov Valery Valery.Davydov@mail.ioffe.ru
St. Petersburg, Russian Federation
 Cirlin George george.cirlin@mail.ru Growth of GaN nanowires with InN inserts by PA-MBE For the first time, the growth details and photoluminescence properties of ultra-thin InN insertions embedded in GaN nanowires are presented. The InN insertions embedded in GaN nanowires exhibit photoluminescence in the range of 2.9–3.35 eV, where the most intense emission line at 3.17–3.23 eV is tentatively attributed to monolayer-thick InN insert based on comparative spectral analysis. These findings can be promising for the development of single-photon sources and Wigner quantum dots operating from cryogenic to elevated temperatures. /10.18721/JPM.183.126 538.975 InN GaN MBE quantum dots nanowires https://physmath.spbstu.ru/article/2025.82.26/
CNF RUS 143-147 Arteev Dmitri ArteevDS@mail.ioffe.ru Ioffe Institute Sakharov Alexey val@beam.ioffe.rssi.ru Ioffe Institute Nikolaev Andrei Aen@mail.ioffe.ru Ioffe Institute Zavarin Evgenii EZavarin@mail.ioffe.ru 0000-0002-2793-5717 Peter the Great St. Petersburg Polytechnic University Filimonov Alexey filimonov@rphf.spbstu.ru
St. Petersburg, Russian Federation
 Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS Tsatsulnikov Andrey andrew@beam.ioffe.ru Optical reflectance spectroscopy for barrier thickness measurement of AlGaN/GaN heterostructures: comparison with X-ray reflectometry This study evaluates optical reflectance (OR) spectroscopy as a rapid, cost-effective alternative to X-ray reflectometry (XRR) for measuring the thickness of the AlGaN barrier layer in AlGaN/GaN heterostructures. OR spectroscopy demonstrated excellent agreement with XRR, with deviations not exceeding 1 nm. The results highlight OR spectroscopy as an efficient and reliable method for routine characterization of GaN-based heterostructures. 10.18721/JPM.183.127 621.315.592 gallium nitride AlGaN/GaN heterostructure optical reflectance spectroscopy X-ray reflectance https://physmath.spbstu.ru/article/2025.82.27/
CNF RUS 148-151 Andreeva Anna aa5991696@gmail.com Ilkiv Igor fiskerr@ymail.com Kotlyar Konstantin konstantin21kt@gmail.com St. Petersburg State University Khrebtov Artem khrebtovart@mail.ru
St. Petersburg, Russian Federation
 Gridchin Vladislav gridchinvo@gmail.com Cirlin George george.cirlin@mail.ru Reznik Rodion moment92@mail.ru MBE growth of wurtzite AlGaAs nanowires with zinc-blende insertions In this work we present the experimental results on the molecular-beam epitaxy growth of wurtzite AlGaAs nanowires with nanoscale zinc-blende insertions on silicon substrate. Structural characterization confirmed the formation of zinc-blende nanoscale segments within the wurtzite nanowire matrix. Autocorrelation function measurements for emission at 710 nm have shown the characteristic dip at zero time delay, which indicates that the synthesized nanostructures are sources of single photons. 10.18721/JPM.183.128 538.9 nanowires AlGaAs quantum dots wurtzite molecular-beam epitaxy https://physmath.spbstu.ru/article/2025.82.28/
CNF RUS 152-155 Lendyashova Vera erilerican@gmail.com Kotlyar Konstantin konstantin21kt@gmail.com St. Petersburg State University Khrebtov Artem khrebtovart@mail.ru
St. Petersburg, Russian Federation
 Cirlin George george.cirlin@mail.ru Ilkiv Igor fiskerr@ymail.com Effect of GaAs buffer layer on the characteristics of GaAs nanowires grown by molecular beam epitaxy on Si(111) substrates The possibility of depositing colloidal nanoparticles onto an amorphous GaAs layer grown on Si(111) substrates and the direct molecular beam epitaxy of size-uniform GaAs nanowires with diameters below 20 nm were demonstrated. Examination of the nanowires revealed a nearly pure wurtzite crystal structure with low stacking fault density. 10.18721/JPM.183.129 538.975 nanowire molecular beam epitaxy semiconductors https://physmath.spbstu.ru/article/2025.82.29/
CNF RUS 156-160 0009-0006-2524-7618 Boitsova Natalia 0000-0003-3859-6981 Abelit Anna 0000-0002-3756-0701 Verlov Nikolai 0000-0002-5470-9301 Stupin Daniil Noises in bioelectronic devices: a case study of electromagnetic interference in biolaboratory facilities Since bioelectrical signals typically have amplitudes below μA and lower than mV, their measurement is significantly susceptible to environmental electromagnetic interference (EMI). In this study, we measured and analyzed the levels of electromagnetic interference in biolaboratory rooms – the birthplace and preliminary test center for any bioelectronic device. We have shown that in an ordinary biolaboratory, which is equipped with typical modern instruments, like digital microscopes, EMI in the sub-250 kHz range can include both periodic and wide-band signals, which can influence the working of impedance sensors and neuroprosthetic implants. The results of our study can be used for the development and testing of noise-suppression systems for bioelectronics applications. 10.18721/JPM.183.130 534.852.6 electromagnetic interference noise impedance devices spectra analysis neuroprosthetic care multielectrode arrays https://physmath.spbstu.ru/article/2025.82.30/
CNF RUS 161-164 Southern Federal University Klimin Viktor kliminvs@sfedu.ru
Rostov-on-Don, Russian Federation
 0000-0001-9326-2349 Demyanenko Alexander 0000-0002-6923-7917 Bobkov Ivan Metamaterials formed on the surface of silicon carbide by plasma treatment In the presented work, a unit cell of a self-complementary metamaterial was designed, which is alternating patches and holes in a conductive graphene-like layer 7 μm thick on a silicon carbide substrate 250 μm thick. The results of a numerical study of the developed structure are presented. The calculations considered the conductivity of the graphene-like film, as well as the dielectric parameters of the silicon carbide substrate. The developed metamaterial is designed to convert circular polarization into linear; the central operating frequency of the resulting structure is 10 GHz. The dimensions of the unit cell are 2.8 mm × 5.6 mm. The elements obtained can be used in microwave technology and antenna structures. For the manufacture of structures, it is planned to use the method of plasma-chemical etching of silicon carbide in a fluorine-containing gas environment, which destroys the silicon component and leaves a graphene-like conductive layer on the surface. The thickness of the graphene-like layer depends on the power of the inductively coupled plasma source and the processing time; in this work, a thickness of 7 µm was taken, obtained at 800 W and 8.5 minutes of etching SiC in an SF6/Ar atmosphere. 10.18721/JPM.183.131 621.35.035 plasma etching metamaterials graphene-like film silicon carbide microelectronics https://physmath.spbstu.ru/article/2025.82.31/
CNF RUS 165-168 Southern Federal University Klimin Viktor kliminvs@sfedu.ru
Rostov-on-Don, Russian Federation
 0000-0001-8635-2573 Gusev Evgeny eyugusev@sfedu.ru 0000-0002-9329-0662 Polyakov Vadim 0009-0000-7843-9839 Tarasov Pavel 0009-0001-1684-1475 Grigoryev Mikhail Wang Shumeng smwang@sdlaser.cn Wang Zhaowei zw.wang@qlu.edu.cn Jiang Liyuan jiangliyuan@sdlaser.cn Zhang Wei zhang.wei@qlu.edu.cn Southern Federal University Ageev Oleg ageev@sfedu.ru
Taganrog, Russian Federation
 All-silicon elements of terahertz photonics obtained by plasma etching In the presented study, nanostructures on a silicon substrate were experimentally formed using the plasma-chemical etching method in a combined discharge plasma. The main objective was to analyze the relationship between the plasma-chemical etching process parameters and the structure geometry, namely: the deviation angle from the vertical, the height of the elements, and deviations from the nominal dimensions. Particular attention was paid to the influence of the active gas concentration, the power of the inductively coupled plasma source (ICP), and the power of the capacitively coupled source (CCP, bias voltage) on the structure geometry. The resulting nanostructures are considered as potential elements of terahertz photonics of metasurfaces. For example, process settings with an ICP power of 400 W, an active gas volume fraction of 7%, and a bias voltage of 101 V made it possible to obtain structures with a height of 136 nm, deviating from the specified dimensions by only 2% (98% compliance). 10.18721/JPM.183.132 66.087.3 all-silicon elements terahertz photonics metamaterials plasma etching microelectronics https://physmath.spbstu.ru/article/2025.82.32/
CNF RUS 169-172 Southern Federal University Klimin Viktor kliminvs@sfedu.ru
Rostov-on-Don, Russian Federation
 0009-0000-7843-9839 Tarasov Pavel 0009-0001-1684-1475 Grigoryev Mikhail 0009-0007-7197-9104 Gavrish Polina 0009-0007-2496-9317 Tkacheva Anastasia 0009-0005-7668-4079 Ptashnik Vitaly Formation of a graphene-like conductive film on the surface of SiC by laser destruction of silicon This study is devoted to the formation of conductive graphene-like layers on the surface of silicon carbide by laser removal of silicon in local zones. The work demonstrates the effect of the laser system pulse frequency on the thickness and electrical conductivity of the resulting conductive graphene-like layer on a silicon carbide plate. In addition, optimal parameters for obtaining a conductive coating and the required surface roughness suitable for designing antenna devices are determined. At a frequency of 100 kHz, conductive graphene films of the coating with a thickness of 6.5 μm were obtained, while the modified zone was 93% of the total impact area. The thickness of the conductive layer in the local zone processed at a frequency of 40 kHz reached 5 μm, and at a frequency of 120 kHz − 7 μm. The results demonstrate the potential for the development and creation of sensor elements, optoelectronics and photonics devices. 10.18721/JPM.183.133 621.315. graphene laser destruction silicon carbide microelectronics https://physmath.spbstu.ru/article/2025.82.33/
CNF RUS 173-177 0000-0002-7746-3009 Rybalka Sergey sbrybalka@yandex.ru 0009-0001-4724-3734 Brundasov Daniil kineticx@bk.ru 0000-0002-7294-7549 Kulchenkov Evgeny 0000-0002-8639-3575 Demidov Andrey The operational amplifiers radiation hardness experimental study The radiation hardness of the operational amplifiers IS-OU2 and LM358 has been performed experimentally using X-ray research complex. It was found that the measured characteristics of operational amplifiers (input offset voltage, consumption current, voltage gain) for the IS-OU2 and its analogue LM358 are similar and demonstrate radiation hardness. As a result, the designed and produced IS-OU2 operational amplifier can be used for producing of spacecraft equipment electronics that can operate under space radiation conditions. 10.18721/JPM.183.134 537.312.54; 621.375.4 operational amplifiers X-ray irradiation ionizing dose effects https://physmath.spbstu.ru/article/2025.82.34/
CNF RUS 178-181 0009-0005-3723-5924 Federal State Budgetary Institution of Science K.A. Valiev Institute of Physics and Technology of the RAS Yaroslavl Branch Morozov Matvey matvey11212@gmail.com
Yaroslavl, Russian Federation
 Uvarov Ilia i.v.uvarov@bk.ru MEMS switch with an intermediate electrode for high-speed communication networks MEMS switches are considered as a promising element base of microwave electronics, but their performance has not reached the required level yet. The ratio of capacitances in the closed and open states does not exceed 10 and has to be increased. A possible method is to apply an intermediate electrode over the dielectric coating of a transmission line. In this work, a MEMS switch with an intermediate electrode is proposed for use in 5G communication networks. 10.18721/JPM.183.135 621.3 MEMS switch intermediate electrode capacitance ratio isolation insertion loss finite element method https://physmath.spbstu.ru/article/2025.82.35/
CNF RUS 182-186 0000-0001-6869-1213 Alferov University Vyacheslavova Ekaterina cate.viacheslavova@yandex.ru Mokhov Dmitry mokhov@spbau.ru 0000-0002-0061-6687 Alferov University Uvarov Alexander lumenlight@mail.ru 0000-0002-3503-7458 St. Petersburg Electrotechnical University "LETI" Maksimova Alina A. deer.blackgreen@yandex.ru 0009-0005-6836-4091 Mikhaylov Oleg oleg.mikhaylov.00@gmail.com 0000-0002-4894-6503 Alferov University Baranov Artem I. baranov_art@spbau.ru
St. Petersburg, Russian Federation
 0000-0002-7632-3194 Alferov University Gudovskikh Alexander gudovskikh@spbau.ru Black silicon formation using cryogenic etching and photoresist layer A series of experiments were conducted to develop the plasma etching of black silicon through a layer of polydimethylglutarimide (PMGI) photoresist. The silicon wafers were previously subjected to wet-chemical treatment. A ~25 nm thick photoresist layer facilitates the process of creating regular black silicon structures on substrates with a diameter of 100 mm. The etching process was varied in terms of the sulfur hexafluoride (SF6) and oxygen (O2) gas mixture ratio, RF power applied to the substrate holder (bias power), inductively coupled plasma (ICP) power and chamber pressure. Increasing the bias power from 10 to 30 W under otherwise constant conditions enhances the etching rate. Reducing the pressure in the reactor from 10 to 5 mTorr at a constant gas flow rate leading to a higher etching rate. Increasing the proportion of oxygen in the SF6/O2 gas mixture (2:1) enhances passivation, reducing the black silicon structures size. 10.18721/JPM.183.136 621.383.51 black silicon PMGI photoresist cryogenic etching solar cell https://physmath.spbstu.ru/article/2025.82.36/
CNF RUS 187-190 Shepeleva Anastasia eduard.shepelev.67@mail.ru 0000-0001-9602-7221 Research Institute of Electronic and Mechanical Devices Gurin Sergey
Penza, Russian Federation
 0000-0001-9319-2475 Research Institute of Electronic and Mechanical Devices Novichkov Maksim
Penza, Russian Federation
 0009-0009-4548-3724 Agafonov Dmitriy Pecherskaya Ekaterina pea1@list.ru 0009-0005-5656-4918 Research Institute of Electronic and Mechanical Devices Zuev Vyacheslav
Penza, Russian Federation
 Technological process of manufacturing a gas-sensitive multisensor chip based on a passivating coating of zinc oxide nanorods obtained by thin-film technology A method for manufacturing a gas-analytical multisensor chip is presented. The technological process of manufacturing with an additional SiO2 layer is described. It was found that the design of the experimental sample of the multisensor chip and the technology of synthesis of low-dimensional gas-sensitive layers provide sensitivity to detected gases up to 1 ppm and allow to increase the speed and temporal stability. 10.18721/JPM.183.137 621.794.47 gas-sensitive layer dopant response time recovery time technological process https://physmath.spbstu.ru/article/2025.82.37/
CNF RUS 191-194 0009-0000-3147-6974 Alferov University of RAS Funtikova Anastasiia 0000-0002-8661-4083 Alferov University Mozharov Alexey mozharov@spbau.ru
St. Petersburg, Russian Federation
 Alferov University Sharov Vladislav vl_sharov@mail.ru
St. Petersburg, Russian Federation
 0000-0001-8440-494X Alferov University Novikova Kristina novikova_k@spbau.ru
St. Petersburg, Russian Federation
 0000-0002-4172-940X Alferov University Dvoretckaia Liliya Investigation of second harmonic generation in spherical mesoporous Si/SiO2 nanoparticles on gold In this work, experimental and numerical investigation of second harmonic generation (SHG) in mesoporous Si/SiO2 nanoparticles has been performed. Experimental results are well-described by simulations. Spectral analysis reveals that SHG efficiency maxima correlate with Mie resonances of Si/SiO2 nanoparticles. Tuning the diameter of the structures the maximum SHG efficiency for required wavelength can be achieved. The nonlinear optical susceptibility of the studied nanoparticles attains values on the order of 1.59×10−14 m2/V, which exceeds that of bulk silicon. Spherical mesoporous Si/SiO2 nanoparticles demonstrate effective second harmonic generation with simple, low-cost fabrication, making them promising candidates as tunable frequency converters for integrated nanophotonic circuits. 10.18721/JPM.183.138 535.015 second harmonic generation silicon spherical nanoparticles Mie resonances gold mesoporous https://physmath.spbstu.ru/article/2025.82.38/
CNF RUS 195-198 0009-0001-8930-5438 Lavrinenko Valeriy Lavrinenko_valerav@inbox.ru Vasilieva Anastasia anastasiastru@mail.ru Parfenov Vadim vadim_parfenov@mail.ru Laser polishing of steel surface for microfluidic applications The paper examines various modes of laser polishing of stainless steel surface to decrease a surface roughness for creating model micro-grooves corresponding to the elements of the microfluidic topology. The effect of the formation of an oxide film and its effect on the roughness of the treated area is considered as well. The data obtained is confirmed by measurements using a profilometer. 10.18721/JPM.183.139 53.06 microfluidics laser processing laser polishing steel https://physmath.spbstu.ru/article/2025.82.39/
CNF RUS 199-203 0000-0002-6222-5526 Skolkovo Institute of Science and Technology Verkhogliadov Grigorii g.verkhogliadov@skoltech.ru 0000-0002-0616-2524 Marunchenko Alexandr ITMO University Sapozhnikova Elizaveta e.sapozhnikova@metalab.ifmo.ru 0000-0003-2283-3495 Kushchenko Olga 0000-0003-2423-7945 ITMO University Sinelnik Artem sinelnik@metalab.ifmo.ru 0000-0002-1793-6812 Skolkovo Institute of Science and Technology Pushkarev Anatoly anatoly.pushkarev@metalab.ifmo.ru Perovskite-GST hybrid platform fo