2304-9782, 2618-8686, 2405-7223 18 3.1 2025 1-319

CNF RUS 12-18 Romashkin Alexey romaleval@gmail.com 0000-0001-5063-1669 Rozanov Roman 0000-0002-4024-5411 Vishnevskiy Alexey Mitrofanova Anastasia mitrofanova.ae@phystech.edu Stebelkov Artem stebelkov@zntc.ru Nepomilueva Valeriya valeria.nepomilueva@yandex.ru Levin Denis vkn@miee.ru Svetikov Vladimir vl.svetikov@gmail.com National Research University of Electronic Technology Nevolin Vladimir vkn@miee.ru

Moscow, Russian Federation

Comparison of the refractive index changes of nanolayers of amidated and carboxylated carbon nanotubes after adsorption of water and ammonia molecules Spray-deposited layers of amidated carbon nanotubes (ACNTs) were characterized using AFM, Raman scattering, and spectroscopic ellipsometry. The layer thickness, diameters, and band gap of ACNTs, as well as the changes in the refractive index (n) at 1319 nm and 1625 nm after H2O and NH3 adsorption in air and H2O in N2 were analyzed in comparison with carboxylated CNTs. Modeling the resonance peak shift due to changes in n for the ACNT-coated Si waveguide microring resonator after NH3 adsorption allows us to propose the use of such a CNT layer set for integrated optical sensors for gas recognition tasks. 10.18721/JPM.183.101 [621.793:621.315.5+544.164]::535.93::681.586 carbon nanotube ellipsometry integrated optics microring resonator sensor https://physmath.spbstu.ru/article/2025.82.1/

CNF RUS 19-22 Shandyba Nikita shandyba.nikita@gmail.com Eremenko Mikhail eryomenko@sfedu.ru 0000-0002-6762-2053 Southern Federal University Dukhan Denis duhan@sfedu.ru

Taganrog, Russian Federation

Chernenko Natalia nchernenko@sfedu.ru Kirichenko Danil dankir@sfedu.ru 0009-0001-5183-5396 Kugaevsky Alexander National Research University ‘Higher School of Economics” Makhov Ivan imahov@hse.ru Kryzhanovskaya Natalia V. Natalia nkryzhanovskaya@hse.ru Balakirev Sergey sbalakirev@sfedu.ru Solodovnik Maxim solodovnikms@sfedu.ru Ordered GaAs NW growth on Si(111) substrates modified by two-step FIB treatment This work demonstrates, for the first time, the selective formation of ordered arrays of vertical GaAs nanowires on Si(111) with a native oxide layer using a two-step pre-treatment of the substrate surface with a focused Ga-ion beam. Based on our previous studies, we show that modifying the substrate through a two-step protocol — first applying a continuous surface treatment with low doses (up to 1×10–13 C/µm2), followed by spot treatment with medium doses (from 1×10–13 to 1×10–12 C/µm2) — effectively suppresses parasitic growth and enables nanowire formation at defined surface locations. Furthermore, adjusting the spacing between ion implantation points (from 0.5 to 5 um) allows precise control over the pitch of the nanowire array. By optimizing dose values, we achieve the formation of single, free-standing, vertically oriented nanowires at each ion beam impact site. The study of optical properties of nanowire arrays reveals their high structural quality, as evidenced by intense photoluminescence of GaAs up to room temperatures. 10.18721/JPM.183.102 538.975 silicon focused ion beam molecular beam epitaxy nanowires III-V nanopatterning site-controlled https://physmath.spbstu.ru/article/2025.82.2/

CNF RUS 23-29 Babenko Sofiya sofi.bb@yandex.ru Bryleva Anna anniebryleva@yandex.ru Kanaev Kirill kir-kv2005@mail.ru Kudryavtsev Oleg oleg6565657@gmail.com Nigmatullina Razalina razalina.n2004@gmail.com Rayanova Kamilla raanovakamilla@gmail.com Sudakova Alexandra asudakova12@gmail.com Trukhanova Mariya trukhanova@physics.msu.ru Komarov Ivan master_kom@mail.ru Thin reduced graphene oxide based films for nanoelectronics and sensors Formation of new devices of flexible and organic electronics requires new materials. One of the perspective classes of materials is graphene derivatives. To enhance wettability of polymer substrates we used multicomponent graphene oxide suspension with further reduction of obtained films with laser irradiation. We used UV and IR lasers for local reduction of these films to form transistors and biosensors. Graphene oxide film from 0.93 mg/ml suspension with lacquer thinner was successfully deposited and reduced for BGTE transistor formation. Reduced graphene oxide film acted as an n-type semiconductor with 2–8×10−3 cm2/V·s−1 mobility. 10.18721/JPM.183.103 620.3 contact angle dispersion medium graphene oxide reduced graphene oxide thin films transistor https://physmath.spbstu.ru/article/2025.82.3/

CNF RUS 30-35 0009-0008-4344-4863 Alferov University Nikolaeva Aleksandra

St. Petersburg, Russian Federation

Anikina Maria mari.a.nikina@yandex.ru 0000-0002-3469-5897 Alferov University Kondratev Valeriy kvm_96@mail.ru

St. Petersburg, Russian Federation

Alferov University Sharov Vladislav vl_sharov@mail.ru

St. Petersburg, Russian Federation

Moscow Institute of Physics and Technology (MIPT) Barulina Elena e.barulina@rqc.ru Gridchin Vladislav gridchinvo@gmail.com St. Petersburg State University Khrebtov Artem khrebtovart@mail.ru

St. Petersburg, Russian Federation

0000-0002-5376-5555 Kuchmizhak Aleksandr 0000-0001-7223-7232 Moscow Institute of Physics and Technology (National Research University) Bolshakov Alexey acr1235@mail.ru

Moscow, Russian Federation

Hybrid emitters based on two-dimensional WSe2 and ordered plasmonic nanobumps Two-dimensional transition metal dichalcogenides (TMDs), particularly tungsten diselenide (WSe2), exhibit exceptional optoelectronic properties, including strong light-matter interactions and tunable exciton behavior, making them promising for nanophotonic applications. This work investigates a hybrid system comprising a WSe2 monolayer integrated with a plasmonic metasurface of Au-nanobumps to enhance photoluminescence (PL) through exciton-plasmon coupling and strain-induced bandgap modulation. The WSe2 monolayers were mechanically exfoliated and transferred onto a laser-patterned Au-nanobump array fabricated via femtosecond laser printing, offering a scalable alternative to conventional lithography. Optical characterization showed a threefold enhancement of photoluminescence intensity of WSe2 monolayer lying on a nanobump compared to WSe2 on a flat gold substrate, what attributed to localized plasmon-exciton interactions and strain effects. The study demonstrates a cost-effective, lithography-free approach for tailoring hybrid TMD-plasmonic systems, enabling precise control over optical properties for next-generation optoelectronic devices. 10.18721/JPM.183.104 535.372 WSe2 emitter nanobump photoluminescence https://physmath.spbstu.ru/article/2025.82.4/

CNF RUS 36-39 Subbotin Evgenii jons712@mail.ru Kozlov Aleksei kozlov.ag@dvfu.ru 0000-0001-8726-5615 Pavlov Dmitrii 0009-0007-5206-5753 Lisenkov Oleg 0009-0000-4799-002X Udilov Andrei Goroshko Dmitrii goroshko@iacp.dvo.ru Institute of Nanotechnologies of Microelectronics of the RAS Poliakov Maxim

Moscow, Russian Federation

Volkova Lidiya lidiya.volkova.96@mail.ru 0009-0008-0181-8994 Prokopeva Glikeriya 0000-0002-8726-9832 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Chernev Igor igor_chernev7@mail.ru 0009-0007-4827-2653 Khoroshilov Dmitry Synthesis of Mg2Si-based core-shell nanowires In this work, we proposed the method for synthesis of nanowires with Mg2Si/Sibased core-shell heterostructure. Silicon nanowires acting as a source of silicon for the silicification reaction were obtained by well-studied metal-stimulated chemical etching of silicon with orientation (100) doped with boron, with a resistivity of 1–10 Ω×cm. A 30 nm thick gold film with an adhesive titanium sublayer 1.5 nm thick was used as the catalytic metal. The etched nanowires had a height of ~10 microns and a diameter of 1.5 microns. The Mg2Si shell was formed using the solid-phase epitaxy method under ultrahigh vacuum conditions. The thickness of the silicide shell was 400–600 nm on the side surfaces of the nanowires. 10.18721/JPM.183.105 538.9 silicon magnesium silicide epitaxy nanowires core-shell thermoelectricity MACE SEM EDX TEM https://physmath.spbstu.ru/article/2025.82.5/

CNF RUS 40-43 Subbotin Evgenii jons712@mail.ru 0009-0000-4799-002X Udilov Andrei 0009-0008-0181-8994 Prokopeva Glikeriya Goroshko Dmitrii goroshko@iacp.dvo.ru Kozlov Aleksei kozlov.ag@dvfu.ru 0000-0002-8726-9832 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Chernev Igor igor_chernev7@mail.ru 0009-0007-5206-5753 Lisenkov Oleg 0009-0007-4827-2653 Khoroshilov Dmitry 0009-0002-7285-3224 Sinotova Sofia 0000-0003-4127-2988 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Galkin Nikolay galkin@iacp.dvo.ru Influence of the growth regime on the transport properties of doped Mg2Si films In this work, we studied transport properties of the doped Mg2Si film on silicon substrate. The ~1 µm-thickness film was synthesized by the solid phase epitaxy method. Well-proven Ag was chosen as a dopant. At room temperature, the resistivity was 2 Ω×cm, the mobility was 327 cm2/(V×s), the density was 9.3×1015 cm−3. We established that using the solid phase epitaxy with the low temperature annealing regime led to mixed electron conductivity of the doped Mg2Si:Ag film due to the substitution of Si-site by Ag. The activation energy of the donor level is 24 meV. 10.18721/JPM.183.106 538.9 silicon magnesium silicide solid phase epitaxy silver Hall-measurements SEM EDX https://physmath.spbstu.ru/article/2025.82.6/

CNF RUS 44-47 0000-0002-1744-5976 Terpitskiy Aleksey Alferov University Reshetov Ilya reshetov_iv@spbstu.ru Alferov University Scherbak Sergey sergeygtn@yandex.ru Alferov University Lipovskii Andrey lipovskii@mail.ru Visualization of electric field of e-beam-formed charge patterns in glass We have formed a given pattern of the second order optical nonlinearity in the subsurface region of a glass by electron irradiation. The nonlinearity was induced by the electric field of the electrons captured by the glass. Formed structure consisted of periodic “strips” and, being irradiated normally to the glass surface with an IR laser, generated the second harmonic (SH) radiation pattern similar to one of a phase diffraction grating. The pattern presented the results of an interference of the SH waves generated by nonlinear strips. Mapping of the SH radiation pattern in orthogonal polarizations of the fundamental laser beam allowed concluding about the distribution of the electric field of electrons captured in the glass. 10.18721/JPM.183.107 538.958 second harmonic generation glass e-beam lithography grating structure https://physmath.spbstu.ru/article/2025.82.7/

CNF RUS 48-52 0000-0003-2498-1192 I.N. Ulyanov Chuvashia State University Lepaev Alexander

Cheboksary, Russian Federation

0000-0002-9723-5652 I.N. Ulyanov Chuvashia State University Ksenofontov Sergey

Cheboksary, Russian Federation

0000-0001-8432-5635 I.N. Ulyanov Chuvashia State University Vasilyeva Olga

Cheboksary, Russian Federation

0000-0002-9810-6932 Kudryavtsev Andrey Influence of physical effects on the structure of soot particles of hydrocarbon flames The structure of the diffusion flame of TC-1 kerosene has been studied. A film of pyrolytic soot was obtained using the sampling method, and the structural changes of this film under thermal exposure were studied. A new carbon structure – glass carbon was obtained as a result of laser irradiation of highly dispersed carbon black. The mechanism of bubble formation in the glassy carbon structure has been established, and the latent heat of carbon “melting” equal to 2110 J/kg has been determined. 10.18721/JPM.183.108 536.46 flame soot carbon pyrolysis IR-spectroscopy https://physmath.spbstu.ru/article/2025.82.8/

CNF RUS 53-58 0000-0002-8726-9832 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Chernev Igor igor_chernev7@mail.ru Subbotin Evgenii jons712@mail.ru Kozlov Aleksei kozlov.ag@dvfu.ru 0009-0002-7285-3224 Sinotova Sofia 0009-0006-2778-8143 Prikhodchenko Alena 0000-0003-0436-0612 Lembikov Aleksei 0009-0008-0181-8994 Prokopeva Glikeriya Goroshko Dmitrii goroshko@iacp.dvo.ru 0000-0003-4127-2988 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Galkin Nikolay galkin@iacp.dvo.ru Si-based photodetector with an Mg2Si contact layer for SWIR range Mg2Si film ~2.3 μm was synthesized by reactive deposition Mg on Si(111) at 340 °C in UHV. The photoresponse of backlighted Al/Si/Mg2Si Schottky structure represents the bell-shaped curve with the peak at 1045 nm and intensity 29 mA/W, 105 mA/W and 195 mA/W under the 0 V, 1 V and 5 V bias respectively with FWHM ~130 nm. 10.18721/JPM.183.109 539.23+539.25+539.26+537.32+537.9 magnesium silicide silicon films epitaxy reactive epitaxy crystal structure microscopy photoresponse https://physmath.spbstu.ru/article/2025.82.9/

CNF RUS 59-64 Voronezh State University of Engineering Technology Kim Kseniya kmkseniya@yandex.ru

Voronezh, Russian Federation

0009-0005-4323-9163 Chernenko Sergey sergey.x173@mail.ru Voronezh State University of Engineering Technology Niftaliev Sabukhi sabukhi@gmail.com

Voronezh, Russian Federation

0009-0000-2880-8958 Frolova Vera Voronezh State University Grechkina Margarita grechkina_m@mail.ru

Voronezh, Russian Federation

0000-0002-9850-8341 Grigoryan Gevorg Belokopytov Dmitry Chukavin Andrey andrey_chukawin@mail.ru Voronezh State University of Engineering Technology Lenshin Alexander lenshinas@mail.ru

Voronezh, Russian Federation

Copper deposition onto porous silicon by vacuum thermal evaporation The morphology and composition of porous silicon samples with thermally evaporated copper coatings were studied using atomic-force microscopy (AFM), infrared spectroscopy (IR), and X-ray photoelectron spectroscopy (XPS). Our research demonstrated that nanocomposites obtained with this method involve both metallic copper and copper oxide. The results indicate that vacuum thermal deposition of copper promotes efficient penetration of this element into the porous silicon structure and retards the oxidation process of the porous layer during long-term storage in the atmosphere. 10.18721/JPM.183.110 546.3-126:544.2 porous silicon composites thin films copper vacuum-thermal sputtering https://physmath.spbstu.ru/article/2025.82.10/

CNF RUS 65-70 National Research University of Electronic Technology Vasilevsky Pavel pavelvasilevs@yandex.ru

Moscow, Russian Federation

National Research University of Electronic Technology Savelyev Mikhail nanonlin@yandex.ru

Moscow, Russian Federation

National Research University of Electronic Technology Gerasimenko Alexander gerasimenko@bms.zone

Moscow, Russian Federation

Nonlinear absorption of laser radiation in the carbon nanotubes dispersions in ultraviolet and visible ranges Carbon nanotubes have unique properties and applications in various fields such as nonlinear optics, flexible electronics, biocompatible composites for tissue repair, etc. The properties of carbon nanotubes can be tuned when exposed to laser radiation. The manifestation of nonlinear absorption properties can improve the methods of formation and processing of materials containing carbon nanotubes. In this work, the properties of nonlinear absorption in the ultraviolet (355 nm) and visible (532 nm) ranges depending on the type of carbon nanotubes and the type of solvent are investigated. The study was performed using the Z-scan method with pulsed exposure (pulse duration is 20 ns). It was shown that the homogeneity of the carbon nanotubes distribution in a liquid medium affects the nonlinear absorption of laser radiation. Single-walled carbon nanotubes in dimethylformamide showed the best nonlinear absorption coefficient and the lowest threshold fluence when the interaction of the medium with laser radiation becomes nonlinear. The demonstrated laser stability of nanotubes also makes them a promising material for laser radiation limiters and nonlinear optical switchers. 10.18721/JPM.183.111 535.015 laser radiation nonlinear absorption carbon nanotubes UV range visible range nanosecond pulses Z-scan https://physmath.spbstu.ru/article/2025.82.11/

CNF RUS 71-76 0000-0002-5760-1523 Sosunov Aleksei 0000-0002-3110-668X Petukhov Igor 0000-0002-8267-0168 Kornilicyn Andrey 0000-0003-3053-1892 Mololkin Anatoliy 0009-0006-1447-3310 Umylin Vladislav 0000-0003-1077-7975 Fakhrtdinov Rashid 0000-0002-6040-6403 Kulikov Anton Annealed proton-exchange waveguides in mixed lithium niobate-tantalate solid solutions Annealed proton-exchange (APE) waveguides in lithium niobate are widely used in integrated photonics for navigation, telecommunications and electric field sensors. In this paper, we analyze the characteristics of planar APE waveguides in new mixed single crystals of lithium niobate-tantalate solid solution by various methods (prism coupling, XRD and IR spectroscopy). The elemental composition (ratio Nb/Ta) of Z-cut mixed lithium niobate-tantalate samples gives a good uniform distribution over the all-surface area by X-ray fluorescence method. APE waveguides in mixed lithium niobate-tantalate single crystals are characterized by a lower value of refractive index increment due to Ta atoms and higher proton diffusion coefficients due to lattice disordering. High diffusion coefficients provide a deeper APE waveguide layer and rapid recovery of the crystal lattice during post-exchange annealing. These results expand the understanding of the proton exchange process in mixed lithium niobate-tantalate solid solutions for the creation of single-mode APE waveguides. 10.18721/JPM.183.112 535.3, 544.015 optical materials lithium niobate-tantalate APE waveguides https://physmath.spbstu.ru/article/2025.82.12/

CNF RUS 77-80 0009-0005-0782-8569 Moroz Alexey 0000-0001-9602-9868 Chistikov Ilia 0000-0003-3741-3936 Ioffe Physical Technical Institute of the Russian Academy of Sciences Melehin Vladimir melekhin1952@gmail.com Peter the Great St. Petersburg Polytechnic University Alferov University Kaasik Vladimir vkaasik@yandex.ru Thermal poling of photosensitive glasses containing Ag+ and Ce3+ ions We present the results on the crystallization of photo-thermo-refractive glass under thermal poling and ultraviolet (UV) irradiation followed by heat treatment. Poling was carried out at a temperature of 300 °C and a voltage of 400−1000 V. A femtosecond laser with a wavelength of 343 nm was used as UV sources. The studies were carried out using optical microscopy, optical absorption and Raman scattering. It is shown that in the subanode layer of the glass after poling, subsequent UV irradiation and heat treatment, crystallization of glass is completely suppressed. After the poling and the heat treatment cesium ions are also recharged in this layer Ce3+ → Ce4+. The mechanisms of the crystallization suppression and ion recharge in the poled region of the glass are discussed. 10.18721/JPM.183.113 53.043 photosensitive glass thermal poling UV irradiation heat treatment crystallization https://physmath.spbstu.ru/article/2025.82.13/

CNF RUS 81-84 0000-0002-3469-5897 Alferov University Kondratev Valeriy kvm_96@mail.ru

St. Petersburg, Russian Federation

0000-0001-6869-1213 Alferov University Vyacheslavova Ekaterina cate.viacheslavova@yandex.ru 0000-0002-4110-1647 Shugabaev Talgat talgashugabaev@mail.ru 0000-0001-7223-7232 Moscow Institute of Physics and Technology (National Research University) Bolshakov Alexey acr1235@mail.ru

Moscow, Russian Federation

Modification of silicon nanowires with silver nanoparticles for gas sensor applications This study focuses on methods to modify the adsorption properties of silicon nanowires produced through plasma cryogenic etching. This research demonstrates the potential for synthesizing a nanocomposite composed of silicon nanowires and silver nanoparticles, which can be utilized to develop highly efficient gas sensors. 10.18721/JPM.183.114 538.91 nanowires selective adsorption sensor electrical impedance spectroscopy https://physmath.spbstu.ru/article/2025.82.14/

CNF RUS 85-90 0000-0002-5183-6807 Vasilevskaya Yulia 0009-0006-1375-6191 Chumachenko Julia Aggregation kinetics of silver nanoparticles ensembles in sub-percolating state and its impact on memristive behaviour The effect of coalescence and aggregation processes on the memristive properties of silver nanoparticle assemblies has been investigated. Nanoparticles were prepared by vacuum-thermal evaporation on silicon substrates with gold electrodes and quartz glasses for morphological control. The structure of the samples and size distribution of nanoparticles were studied using scanning electron microscopy (SEM) and UV-visible spectroscopy. Memristive properties were estimated using cyclic voltammetry. Due to Ostwald ripening and an increase in average nanoparticle size, the operating voltage required to switch the system into the memristive state decreased, while the conductivity dynamics changed. These findings are useful for ensuring the stability of memristive devices based on silver nanoparticle assemblies. 10.18721/JPM.183.115 539.219.3 coalescence silver nanoparticles surface plasmon resonance memristive dynamics surface diffusion https://physmath.spbstu.ru/article/2025.82.15/

CNF RUS 91-94 0000-0002-4513-6345 Ruzhevich Maxim max.ruzhevich@niuitmo.ru 0009-0007-1056-5100 ITMO University Kirilenko Iaroslav idkirilenko@itmo.ru St. Petersburg Electrotechnical University "LETI" Chumanov Ivan chumanov2000@yandex.ru

St. Petersburg, Russian Federation

St. Petersburg Electrotechnical University "LETI" Firsov Dmitrii d.d.firsov@gmail.com

St. Petersburg, Russian Federation

St. Petersburg Electrotechnical University "LETI" Komkov Oleg oleg_sergeevich@mail.ru

St. Petersburg, Russian Federation

Mynbaev Karim mynkad@mail.ioffe.ru 0000-0002-9989-3843 Romanov Viacheslav romanovvv@mail.ioffe.ru Ioffe Institute Moiseev Konstantin mkd@iropt2.ioffe.ru

St. Petersburg, Russian Federation

Optical studies of InAs/InAsSb/InAsSbP heterostructures Fourier-transform infrared photoluminescence and photoreflectance were used to study the optical properties of InAs/InAsSbP and InAs/InAsSb/InAsSbP heterostructures. A strong dependence of chemical composition and optical quality of the top InAsSbP barrier layers on the composition of the material on which the layer was grown has been established. 10.18721/JPM.183.116 538.91 heterostructures InAsSbP photoluminescence photoreflectance https://physmath.spbstu.ru/article/2025.82.16/

CNF RUS 95-98 0009-0004-1245-1391 Voitovich Veronica National Research University ‘Higher School of Economics” Makhov Ivan imahov@hse.ru ITMO University Andryushkin Vladislav vvandriushkin@itmo.ru

St. Petersburg, Russian Federation

Kopytov Pavel kopytovpe@itmo.ru 0009-0001-3683-5558 ITMO University Papylev Denis dspapylev@itmo.ru

St. Petersburg, Russian Federation

Kryzhanovskaya Natalia V. Natalia nkryzhanovskaya@hse.ru 35379962200 Ioffe Physical Technical Institute of the Russian Academy of Sciences Zhukov Alexey zhukov@beam.ioffe.ru

Russia, 194021, St.Petersburg, Polytechnicheskaya 26

Photoluminescence of InGaAs/InAlAs short-period superlattices grown on InP substrate The photoluminescence spectra of short-period InGaAs/InAlAs superlattices emitting in the 1.3 µm spectral range were investigated in the wide range of pumping powers at the temperatures of 5−300 K. The 5 K photoluminescence spectra consisted of luminescence bands associated with radiative electron-hole recombination in superlattices as well as in the InP substrate and buffer layers of heterostructures. Spectral positions of superlattice emission bands are in a good agreement with calculated values obtained with transfer matrix method for all the samples. The temperature evolution of emission spectra was investigated as well. 10.18721/JPM.183.117 535.3 superlattice photoluminescence VCSEL temperature quenching https://physmath.spbstu.ru/article/2025.82.17/

CNF RUS 99-104 Voronezh State University of Engineering Technology Lenshin Alexander lenshinas@mail.ru

Voronezh, Russian Federation

0000-0003-0123-9526 Polkovnikova Yulia Voronezh State University of Engineering Technology Chernousova Olga byolval@mail.ru

Voronezh, Russian Federation

0009-0000-2880-8958 Frolova Vera Domashevskaya Evelina Composition and properties of porous silicon nanoparticles with deposited cinnarizine As a result of our work samples of nanopowders of porous silicon with the deposited cinnarizine were obtained and technique of the chemical deposition of cinnarizine into the porous layer was elaborated. The obtained structures of porous silicon can be used for delivery of various therapeutic agents starting from small molecules of the preparations up to the large peptides/protein therapeutic agents while controlling composition of the surface and morphology of the porous layer. Nanopowder of porous silicon was obtained by mechanical and ultrasound grinding of the porous silicon wafers. Using transmission electron microscopy, infrared and ultraviolet spectroscopy morphology and composition of the porous silicon samples were studied. According to the results of transmission electron microscopy (TEM) a presence of both crystalline and amorphous phases was determined. Chemical composition and types of the bonds in the porous silicon layer was studied according to the data of infrared (IR) spectroscopy. The data on ultraviolet (UV) allowed to determine the energy of the possible direct transitions in nanostructures. Adsorption and desorption processes in nanostructures were studied. 10.18721/JPM.183.118 538.9 mesoporous silicon nanopowders nanopowders spectroscopy cinnarizine systems of drug delivery https://physmath.spbstu.ru/article/2025.82.18/

CNF RUS 105-109 0000-0002-8319-1492 Pozdniakov Stepan 0009-0009-5076-6470 Matveeva Elizaveta 0009-0009-6600-0592 Li Shixiong 0000-0001-9923-3995 Sandzhieva Maria 0000-0002-9257-6183 Makarov Sergey s.makarov@metalab.ifmo.ru Enhanced optical performance of FAPbBr3-MOF composite films Metal halide perovskite nanocrystals have emerged as excellent candidate materials for various optoelectronic applications due to their distinguished optoelectronic properties. However, suffering from instability under environmental conditions such as humidity, temperature and ultraviolet radiation restricts its further development and larger-scale application. In this study, we present a one-step method for fabricating composite thin films of formamidinium lead bromide and a lead-based metal-organic framework with enhanced stability. Meanwhile, the obtained composite films exhibited a low amplified spontaneous emission threshold of 12.3 μJ·cm−2 enhancing their potential for efficient optoelectronic applications, including light-emitting devices and lasers. 10.18721/JPM.183.119 538.975 perovskite metal-organic framework composites enhanced spontaneous emission https://physmath.spbstu.ru/article/2025.82.19/

CNF RUS 110-113 0009-0007-3942-7908 Kan Gennadiy gennadiykang@gmail.com 0009-0009-4341-4346 Cui Zhihao 0000-0002-1744-5976 Terpitskiy Aleksey Alferov University Scherbak Sergey sergeygtn@yandex.ru Peter the Great St. Petersburg Polytechnic University Zhurikhina Valentina zhurikhina@mail.edu.ioffe.ru Analysis of nonlinear susceptibility in ion-exchanged glass We demonstrate that electric-field-assisted ion-exchange in glass allows one to obtain a structure with close to a step-like concentration and conductivity profiles. Application of DC voltage to the ion-exchanged glass results in charge accumulation. The electric field induces symmetry breaking and provides quadratic optical susceptibility in the glass. Nonlinear optical properties of modified glass are studied using the Maker fringe technique. Particularly, we study the influence of the nonlinear susceptibility tensor components ratio \(χ_{zxx} : χ_{zzz} \) on resulting characteristics. Comparing modeling and experiments, we deduced the ratio 1:3 which corresponds to Kleinman symmetry of isotropic materials. 10.18721/JPM.183.120 535.016 glass ion-exchange second harmonic generation EFISH phenomenon phase-matching https://physmath.spbstu.ru/article/2025.82.20/

CNF RUS 114-118 0000-0002-7829-5326 Adamovich Artem Golovanov Victor 0000-0009-6999-9030 Makhmud-Akhunov Marat 0000-0002-8612-6258 Yavtushenko Igor Soloviev Andrei asus_work@mail.ru Bodnarsky Dmitry Сapacitive properties of composite electrodes based on polyaniline and nanoporous titanium oxide obtained by plasma-electrolytic oxidation The capacitive characteristics of composite electrodes based on nanoporous titanium oxide obtained by plasma electrolytic oxidation are considered. It is shown that the specific capacitance of a multilayer supercapacitor based on formed titanium oxide and polyaniline (PANI) is 10 mF/cm2. The resulting oxide layers have a crystalline structure, providing minimal faradaic resistance, which is promising for use in electrochemical double-layer supercapacitors. 10.18721/JPM.183.121 537.9 titanium electrolyte plasma nanoporous oxide polyaniline supercapacitor https://physmath.spbstu.ru/article/2025.82.21/

CNF RUS 119-124 0000-0001-7499-0578 Institute of High Current Electronics, Siberian Branch of RAS Kozhevnikov Vasily Vasily.Y.Kozhevnikov@ieee.org Kozyrev Andrey kozyrev@to.hcei.tsc.ru The phenomenon of “anomalous electrons” in pulsed high-current vacuum discharges This paper presents the first comprehensive theoretical explanation, based on computational physical kinetics, for the phenomenon of electrons attaining energies exceeding the amplitude of the applied voltage (in eV units) in a vacuum diode. The proposed theory thoroughly elucidates the existence of so-called “anomalous electrons”, detailing their generation dynamics and underlying mechanisms. Additionally, the work calculates the integral energy spectra of these anomalous electrons in a high-current pulsed vacuum discharge and quantifies their contribution to the total current flow. The main tool used for numerical calculations is the latest meshless method for solving Vlasov-Poisson equation systems, known as the numerical flow iteration method (NuFI). The findings provide critical insights into non-equilibrium electron behaviour under extreme conditions, advancing the understanding of electron transport in vacuum-based high-power devices. 10.18721/JPM.183.122 533.9.02 vacuum electronics anomalous electrons physical kinetics https://physmath.spbstu.ru/article/2025.82.22/

CNF RUS 125-128 0009-0005-4578-7550 Masyutin Dmitriy 0009-0004-6609-9741 Rudnev Artem 0000-0003-3686-935X National Research University “Higher School of Economics” (St. Petersburg branch) Moiseev Eduard emoiseev@hse.ru Vainilovich Alexey a.vainilovich@ifanbel.bas-net.by Lutsenko Eugeniy e.lutsenko@ifanbel.bas-net.by Tsatsulnikov Andrey andrew@beam.ioffe.ru Sakharov Alexey val@beam.ioffe.rssi.ru Arteev Dmitri ArteevDS@mail.ioffe.ru Nikolaev Andrei Aen@mail.ioffe.ru 0000-0002-2313-9051 Pivovarova Antonina Zavarin Evgenii EZavarin@mail.ioffe.ru Il'inskaya Natalya Natalya.Ilynskaya@mail.ioffe.ru Ioffe Institute Markov Lev

St. Petersburg, Russian Federation

Ioffe Institute Smirnova Irina irina@quantum.ioffe.ru

St. Petersburg, Russian Federation

Kryzhanovskaya Natalia V. Natalia nkryzhanovskaya@hse.ru 35379962200 Ioffe Physical Technical Institute of the Russian Academy of Sciences Zhukov Alexey zhukov@beam.ioffe.ru

Russia, 194021, St.Petersburg, Polytechnicheskaya 26

Investigation of microdisks lasers with an InGaN/GaN quantum well in the active region at elevated temperatures In this work, we present results on high-temperature operation microdisk lasers with an active region based on InGaN/GaN quantum wells. The diameter of the microdisks was 5 μm. The photoluminescence spectra measured in the temperature range from 25 °С to 100 °С. The temperature stability lasing is demonstrated. 10.18721/JPM.183.123 535.372:621.315.592 GaN InGaN/GaN quantum wells microdisk resonator WGM https://physmath.spbstu.ru/article/2025.82.23/

CNF RUS 129-134 0000-0002-9733-751X Shipenok Xenia 0009-0007-6517-9784 Mazhikenova Aliya Glukhovskoy Evgeny Glukhovskoy@gmail.com Shipovskaya Anna Shipovskayaab@yandex.ru Surface tension measurement of chitosan aspartate nanoparticle dispersions by a modified Wilhelmy method A modification of the Wilhelmy method is proposed for measuring the surface tension of polymer nanoparticle dispersions, whose key feature is the static nature of the Wilhelmy plate when measuring the surface tension force. Tests on the example of nanostructured chitosan aspartate showed satisfactory accuracy of the modified method in estimating the surface activity of nanodispersions in a wide range of polymer concentrations. The concentration dependence of the surface tension of the dispersion of chitosan aspartate nanoparticles was obtained, and concentration ranges with different surface effects were outlined. The contribution of individual components used in obtaining nanoparticles to the surface activity of the nanodispersion was estimated. 10.18721/JPM.183.124 547.458:[544+532.61] chitosan L- and D-aspartic acid nanoparticles surface tension https://physmath.spbstu.ru/article/2025.82.24/

CNF RUS 135-138 0000-0002-6342-8448 Vasin Sergei 0009-0007-9634-0745 Kuzmin Nikolai 0000-0003-4854-2813 Sergeev Viacheslav sva@ulstu.ru 0000-0001-6541-2637 Buzaeva Mariya Study of thermal conductivity of polymer materials with carbon nanotubes using laser flash method The thermal conductivity of nanocomposite polymer materials based on polyvinyl alcohol and epoxy resin with the inclusion of multi-walled carbon nanotubes was studied using the laser flash method. The possibility of using the laser flash method to determine thermal conductivity in thin-film polymer materials is demonstrated and its features are revealed. It has been shown that the presence of carbon nanotubes in polymer matrices leads to an increase in the coefficients of thermal diffusivity and thermal conductivity by several times compared to pure polymer materials. 10.18721/JPM.183.125 539.23 carbon nanotubes polymers thermal conductivity laser flash method https://physmath.spbstu.ru/article/2025.82.25/

CNF RUS 139-142 Gridchin Vladislav gridchinvo@gmail.com Ioffe Institute Mintairov Alexander amintairov@mail.ioffe.ru

St. Petersburg, Russian Federation

0000-0002-4110-1647 Shugabaev Talgat talgashugabaev@mail.ru Axenov Valerii axenov.v@gmail.com Ioffe Institute Vlasov Alexei vlasov@scell.ioffe.ru

St. Petersburg, Russian Federation

Lendyashova Vera erilerican@gmail.com Kotlyar Konstantin konstantin21kt@gmail.com Eliseev Ilya St. Petersburg State University Khrebtov Artem khrebtovart@mail.ru

St. Petersburg, Russian Federation

Reznik Rodion moment92@mail.ru Ioffe Institute Davydov Valery Valery.Davydov@mail.ioffe.ru

St. Petersburg, Russian Federation

Cirlin George george.cirlin@mail.ru Growth of GaN nanowires with InN inserts by PA-MBE For the first time, the growth details and photoluminescence properties of ultra-thin InN insertions embedded in GaN nanowires are presented. The InN insertions embedded in GaN nanowires exhibit photoluminescence in the range of 2.9–3.35 eV, where the most intense emission line at 3.17–3.23 eV is tentatively attributed to monolayer-thick InN insert based on comparative spectral analysis. These findings can be promising for the development of single-photon sources and Wigner quantum dots operating from cryogenic to elevated temperatures. /10.18721/JPM.183.126 538.975 InN GaN MBE quantum dots nanowires https://physmath.spbstu.ru/article/2025.82.26/

CNF RUS 143-147 Arteev Dmitri ArteevDS@mail.ioffe.ru Sakharov Alexey val@beam.ioffe.rssi.ru Nikolaev Andrei Aen@mail.ioffe.ru Zavarin Evgenii EZavarin@mail.ioffe.ru 0000-0002-2793-5717 Peter the Great St. Petersburg Polytechnic University Filimonov Alexey filimonov@rphf.spbstu.ru

St. Petersburg, Russian Federation

Tsatsulnikov Andrey andrew@beam.ioffe.ru Optical reflectance spectroscopy for barrier thickness measurement of AlGaN/GaN heterostructures: comparison with X-ray reflectometry This study evaluates optical reflectance (OR) spectroscopy as a rapid, cost-effective alternative to X-ray reflectometry (XRR) for measuring the thickness of the AlGaN barrier layer in AlGaN/GaN heterostructures. OR spectroscopy demonstrated excellent agreement with XRR, with deviations not exceeding 1 nm. The results highlight OR spectroscopy as an efficient and reliable method for routine characterization of GaN-based heterostructures. 10.18721/JPM.183.127 621.315.592 gallium nitride AlGaN/GaN heterostructure optical reflectance spectroscopy X-ray reflectance https://physmath.spbstu.ru/article/2025.82.27/

CNF RUS 148-151 Andreeva Anna aa5991696@gmail.com Ilkiv Igor fiskerr@ymail.com Kotlyar Konstantin konstantin21kt@gmail.com St. Petersburg State University Khrebtov Artem khrebtovart@mail.ru

St. Petersburg, Russian Federation

Gridchin Vladislav gridchinvo@gmail.com Cirlin George george.cirlin@mail.ru Reznik Rodion moment92@mail.ru MBE growth of wurtzite AlGaAs nanowires with zinc-blende insertions In this work we present the experimental results on the molecular-beam epitaxy growth of wurtzite AlGaAs nanowires with nanoscale zinc-blende insertions on silicon substrate. Structural characterization confirmed the formation of zinc-blende nanoscale segments within the wurtzite nanowire matrix. Autocorrelation function measurements for emission at 710 nm have shown the characteristic dip at zero time delay, which indicates that the synthesized nanostructures are sources of single photons. 10.18721/JPM.183.128 538.9 nanowires AlGaAs quantum dots wurtzite molecular-beam epitaxy https://physmath.spbstu.ru/article/2025.82.28/

CNF RUS 152-155 Lendyashova Vera erilerican@gmail.com Kotlyar Konstantin konstantin21kt@gmail.com St. Petersburg State University Khrebtov Artem khrebtovart@mail.ru

St. Petersburg, Russian Federation

Cirlin George george.cirlin@mail.ru Ilkiv Igor fiskerr@ymail.com Effect of GaAs buffer layer on the characteristics of GaAs nanowires grown by molecular beam epitaxy on Si(111) substrates The possibility of depositing colloidal nanoparticles onto an amorphous GaAs layer grown on Si(111) substrates and the direct molecular beam epitaxy of size-uniform GaAs nanowires with diameters below 20 nm were demonstrated. Examination of the nanowires revealed a nearly pure wurtzite crystal structure with low stacking fault density. 10.18721/JPM.183.129 538.975 nanowire molecular beam epitaxy semiconductors https://physmath.spbstu.ru/article/2025.82.29/

CNF RUS 156-160 0009-0006-2524-7618 Boitsova Natalia 0000-0003-3859-6981 Abelit Anna 0000-0002-3756-0701 Verlov Nikolai 0000-0002-5470-9301 Stupin Daniil Noises in bioelectronic devices: a case study of electromagnetic interference in biolaboratory facilities Since bioelectrical signals typically have amplitudes below μA and lower than mV, their measurement is significantly susceptible to environmental electromagnetic interference (EMI). In this study, we measured and analyzed the levels of electromagnetic interference in biolaboratory rooms – the birthplace and preliminary test center for any bioelectronic device. We have shown that in an ordinary biolaboratory, which is equipped with typical modern instruments, like digital microscopes, EMI in the sub-250 kHz range can include both periodic and wide-band signals, which can influence the working of impedance sensors and neuroprosthetic implants. The results of our study can be used for the development and testing of noise-suppression systems for bioelectronics applications. 10.18721/JPM.183.130 534.852.6 electromagnetic interference noise impedance devices spectra analysis neuroprosthetic care multielectrode arrays https://physmath.spbstu.ru/article/2025.82.30/

CNF RUS 161-164 Southern Federal University Klimin Viktor kliminvs@sfedu.ru

Rostov-on-Don, Russian Federation

0000-0001-9326-2349 Demyanenko Alexander 0000-0002-6923-7917 Bobkov Ivan Metamaterials formed on the surface of silicon carbide by plasma treatment In the presented work, a unit cell of a self-complementary metamaterial was designed, which is alternating patches and holes in a conductive graphene-like layer 7 μm thick on a silicon carbide substrate 250 μm thick. The results of a numerical study of the developed structure are presented. The calculations considered the conductivity of the graphene-like film, as well as the dielectric parameters of the silicon carbide substrate. The developed metamaterial is designed to convert circular polarization into linear; the central operating frequency of the resulting structure is 10 GHz. The dimensions of the unit cell are 2.8 mm × 5.6 mm. The elements obtained can be used in microwave technology and antenna structures. For the manufacture of structures, it is planned to use the method of plasma-chemical etching of silicon carbide in a fluorine-containing gas environment, which destroys the silicon component and leaves a graphene-like conductive layer on the surface. The thickness of the graphene-like layer depends on the power of the inductively coupled plasma source and the processing time; in this work, a thickness of 7 µm was taken, obtained at 800 W and 8.5 minutes of etching SiC in an SF6/Ar atmosphere. 10.18721/JPM.183.131 621.35.035 plasma etching metamaterials graphene-like film silicon carbide microelectronics https://physmath.spbstu.ru/article/2025.82.31/

CNF RUS 165-168 Southern Federal University Klimin Viktor kliminvs@sfedu.ru

Rostov-on-Don, Russian Federation

0000-0001-8635-2573 Gusev Evgeny eyugusev@sfedu.ru 0000-0002-9329-0662 Polyakov Vadim 0009-0000-7843-9839 Tarasov Pavel 0009-0001-1684-1475 Grigoryev Mikhail Wang Shumeng smwang@sdlaser.cn Wang Zhaowei zw.wang@qlu.edu.cn Jiang Liyuan jiangliyuan@sdlaser.cn Zhang Wei zhang.wei@qlu.edu.cn Southern Federal University Ageev Oleg ageev@sfedu.ru

Taganrog, Russian Federation

All-silicon elements of terahertz photonics obtained by plasma etching In the presented study, nanostructures on a silicon substrate were experimentally formed using the plasma-chemical etching method in a combined discharge plasma. The main objective was to analyze the relationship between the plasma-chemical etching process parameters and the structure geometry, namely: the deviation angle from the vertical, the height of the elements, and deviations from the nominal dimensions. Particular attention was paid to the influence of the active gas concentration, the power of the inductively coupled plasma source (ICP), and the power of the capacitively coupled source (CCP, bias voltage) on the structure geometry. The resulting nanostructures are considered as potential elements of terahertz photonics of metasurfaces. For example, process settings with an ICP power of 400 W, an active gas volume fraction of 7%, and a bias voltage of 101 V made it possible to obtain structures with a height of 136 nm, deviating from the specified dimensions by only 2% (98% compliance). 10.18721/JPM.183.132 66.087.3 all-silicon elements terahertz photonics metamaterials plasma etching microelectronics https://physmath.spbstu.ru/article/2025.82.32/

CNF RUS 169-172 Southern Federal University Klimin Viktor kliminvs@sfedu.ru

Rostov-on-Don, Russian Federation

0009-0000-7843-9839 Tarasov Pavel 0009-0001-1684-1475 Grigoryev Mikhail 0009-0007-7197-9104 Gavrish Polina 0009-0007-2496-9317 Tkacheva Anastasia 0009-0005-7668-4079 Ptashnik Vitaly Formation of a graphene-like conductive film on the surface of SiC by laser destruction of silicon This study is devoted to the formation of conductive graphene-like layers on the surface of silicon carbide by laser removal of silicon in local zones. The work demonstrates the effect of the laser system pulse frequency on the thickness and electrical conductivity of the resulting conductive graphene-like layer on a silicon carbide plate. In addition, optimal parameters for obtaining a conductive coating and the required surface roughness suitable for designing antenna devices are determined. At a frequency of 100 kHz, conductive graphene films of the coating with a thickness of 6.5 μm were obtained, while the modified zone was 93% of the total impact area. The thickness of the conductive layer in the local zone processed at a frequency of 40 kHz reached 5 μm, and at a frequency of 120 kHz − 7 μm. The results demonstrate the potential for the development and creation of sensor elements, optoelectronics and photonics devices. 10.18721/JPM.183.133 621.315. graphene laser destruction silicon carbide microelectronics https://physmath.spbstu.ru/article/2025.82.33/

CNF RUS 173-177 0000-0002-7746-3009 Rybalka Sergey sbrybalka@yandex.ru 0009-0001-4724-3734 Brundasov Daniil kineticx@bk.ru 0000-0002-7294-7549 Kulchenkov Evgeny 0000-0002-8639-3575 Demidov Andrey The operational amplifiers radiation hardness experimental study The radiation hardness of the operational amplifiers IS-OU2 and LM358 has been performed experimentally using X-ray research complex. It was found that the measured characteristics of operational amplifiers (input offset voltage, consumption current, voltage gain) for the IS-OU2 and its analogue LM358 are similar and demonstrate radiation hardness. As a result, the designed and produced IS-OU2 operational amplifier can be used for producing of spacecraft equipment electronics that can operate under space radiation conditions. 10.18721/JPM.183.134 537.312.54; 621.375.4 operational amplifiers X-ray irradiation ionizing dose effects https://physmath.spbstu.ru/article/2025.82.34/

CNF RUS 178-181 0009-0005-3723-5924 Federal State Budgetary Institution of Science K.A. Valiev Institute of Physics and Technology of the RAS Yaroslavl Branch Morozov Matvey matvey11212@gmail.com

Yaroslavl, Russian Federation

Uvarov Ilia i.v.uvarov@bk.ru MEMS switch with an intermediate electrode for high-speed communication networks MEMS switches are considered as a promising element base of microwave electronics, but their performance has not reached the required level yet. The ratio of capacitances in the closed and open states does not exceed 10 and has to be increased. A possible method is to apply an intermediate electrode over the dielectric coating of a transmission line. In this work, a MEMS switch with an intermediate electrode is proposed for use in 5G communication networks. 10.18721/JPM.183.135 621.3 MEMS switch intermediate electrode capacitance ratio isolation insertion loss finite element method https://physmath.spbstu.ru/article/2025.82.35/

CNF RUS 182-186 0000-0001-6869-1213 Alferov University Vyacheslavova Ekaterina cate.viacheslavova@yandex.ru Mokhov Dmitry mokhov@spbau.ru 0000-0002-0061-6687 Alferov University Uvarov Alexander lumenlight@mail.ru 0000-0002-3503-7458 St. Petersburg Electrotechnical University "LETI" Maksimova Alina A. deer.blackgreen@yandex.ru 0009-0005-6836-4091 Mikhaylov Oleg oleg.mikhaylov.00@gmail.com 0000-0002-4894-6503 Alferov University Baranov Artem I. baranov_art@spbau.ru

St. Petersburg, Russian Federation

0000-0002-7632-3194 Alferov University Gudovskikh Alexander gudovskikh@spbau.ru Black silicon formation using cryogenic etching and photoresist layer A series of experiments were conducted to develop the plasma etching of black silicon through a layer of polydimethylglutarimide (PMGI) photoresist. The silicon wafers were previously subjected to wet-chemical treatment. A ~25 nm thick photoresist layer facilitates the process of creating regular black silicon structures on substrates with a diameter of 100 mm. The etching process was varied in terms of the sulfur hexafluoride (SF6) and oxygen (O2) gas mixture ratio, RF power applied to the substrate holder (bias power), inductively coupled plasma (ICP) power and chamber pressure. Increasing the bias power from 10 to 30 W under otherwise constant conditions enhances the etching rate. Reducing the pressure in the reactor from 10 to 5 mTorr at a constant gas flow rate leading to a higher etching rate. Increasing the proportion of oxygen in the SF6/O2 gas mixture (2:1) enhances passivation, reducing the black silicon structures size. 10.18721/JPM.183.136 621.383.51 black silicon PMGI photoresist cryogenic etching solar cell https://physmath.spbstu.ru/article/2025.82.36/

CNF RUS 187-190 Shepeleva Anastasia eduard.shepelev.67@mail.ru 0000-0001-9602-7221 Research Institute of Electronic and Mechanical Devices Gurin Sergey

Penza, Russian Federation

0000-0001-9319-2475 Research Institute of Electronic and Mechanical Devices Novichkov Maksim

Penza, Russian Federation

0009-0009-4548-3724 Agafonov Dmitriy Pecherskaya Ekaterina pea1@list.ru 0009-0005-5656-4918 Research Institute of Electronic and Mechanical Devices Zuev Vyacheslav

Penza, Russian Federation

Technological process of manufacturing a gas-sensitive multisensor chip based on a passivating coating of zinc oxide nanorods obtained by thin-film technology A method for manufacturing a gas-analytical multisensor chip is presented. The technological process of manufacturing with an additional SiO2 layer is described. It was found that the design of the experimental sample of the multisensor chip and the technology of synthesis of low-dimensional gas-sensitive layers provide sensitivity to detected gases up to 1 ppm and allow to increase the speed and temporal stability. 10.18721/JPM.183.137 621.794.47 gas-sensitive layer dopant response time recovery time technological process https://physmath.spbstu.ru/article/2025.82.37/

CNF RUS 191-194 0009-0000-3147-6974 Alferov University of RAS Funtikova Anastasiia 0000-0002-8661-4083 Alferov University Mozharov Alexey mozharov@spbau.ru

St. Petersburg, Russian Federation

Alferov University Sharov Vladislav vl_sharov@mail.ru

St. Petersburg, Russian Federation

0000-0001-8440-494X Alferov University Novikova Kristina novikova_k@spbau.ru

St. Petersburg, Russian Federation

0000-0002-4172-940X Alferov University Dvoretckaia Liliya Investigation of second harmonic generation in spherical mesoporous Si/SiO2 nanoparticles on gold In this work, experimental and numerical investigation of second harmonic generation (SHG) in mesoporous Si/SiO2 nanoparticles has been performed. Experimental results are well-described by simulations. Spectral analysis reveals that SHG efficiency maxima correlate with Mie resonances of Si/SiO2 nanoparticles. Tuning the diameter of the structures the maximum SHG efficiency for required wavelength can be achieved. The nonlinear optical susceptibility of the studied nanoparticles attains values on the order of 1.59×10−14 m2/V, which exceeds that of bulk silicon. Spherical mesoporous Si/SiO2 nanoparticles demonstrate effective second harmonic generation with simple, low-cost fabrication, making them promising candidates as tunable frequency converters for integrated nanophotonic circuits. 10.18721/JPM.183.138 535.015 second harmonic generation silicon spherical nanoparticles Mie resonances gold mesoporous https://physmath.spbstu.ru/article/2025.82.38/

CNF RUS 195-198 0009-0001-8930-5438 Lavrinenko Valeriy Lavrinenko_valerav@inbox.ru Vasilieva Anastasia anastasiastru@mail.ru Parfenov Vadim vadim_parfenov@mail.ru Laser polishing of steel surface for microfluidic applications The paper examines various modes of laser polishing of stainless steel surface to decrease a surface roughness for creating model micro-grooves corresponding to the elements of the microfluidic topology. The effect of the formation of an oxide film and its effect on the roughness of the treated area is considered as well. The data obtained is confirmed by measurements using a profilometer. 10.18721/JPM.183.139 53.06 microfluidics laser processing laser polishing steel https://physmath.spbstu.ru/article/2025.82.39/

CNF RUS 199-203 0000-0002-6222-5526 Verkhogliadov Grigorii g.verkhogliadov@skoltech.ru 0000-0002-0616-2524 Marunchenko Alexandr Sapozhnikova Elizaveta e.sapozhnikova@metalab.ifmo.ru 0000-0003-2283-3495 Kushchenko Olga 0000-0003-2423-7945 Sinelnik Artem 0000-0002-1793-6812 Pushkarev Anatoly anatoly.pushkarev@metalab.ifmo.ru Perovskite-GST hybrid platform for optical memristors with complex optical response This study explores the optical properties of a perovskite-GST hybrid platform, revealing a remarkable, up to twofold, increasing of photoluminescence intensity of halide perovskite thin film by switching the phase of GST substrate from amorphous to crystalline. The underlying mechanisms responsible for this strong modulation in photoluminescence intensity are related to interaction between the halide perovskite and the GST substrate, which we are investigating through comprehensive morphological and optical characterization techniques, highlighting the different reflectance properties of the crystalline and amorphous phases of GST. We consider this hybrid platform as a promising architecture for a neuromorphic system, leveraging the volatile properties of halide perovskites with the non-volatile characteristics of GST. This architecture aims to mimic the functionalities of the human brain, including the behavior of neurons and synapses, thus opening new avenues for the development of energy-efficient and highly adaptive computing systems. Our findings contribute to a deeper understanding of hybrid perovskite-GST platform and its potential in future technological applications in neuromorphic systems. 10.18721/JPM.183.140 628.9.037 halide perovskite phase-change materials volatile memory nonvolatile memory https://physmath.spbstu.ru/article/2025.82.40/

CNF RUS 204-208 Kalantaevskii Ivan royal37lol@gmail.com Gorelkina Tatiana tatiana.gorelkina@metalab.ifmo.ru Gasnikova Ksenia k.gasnikova@metalab.ifmo.ru 0000-0002-9026-6106 Glebov Nikita Moscow Institute of Physics and Technology (MIPT) Chernov Alexander a.chernov@rqc.ru

Moscow, Russian Federation

0000-0002-8143-4606 Alekseev Prokhor ITMO University Kravtsov Vasily vasily.kravtsov@metalab.ifmo.ru

St. Petersburg, Russian Federation

Mechanical scanning probe lithography of van der Waals antiferromagnetic CrSBr for fabrication of high-index waveguides and resonators Recently emerged van der Waals antiferromagnetic CrSBr provides new opportunities for developing compact integrated photonic and optoelectronic devices since it exhibits high refractive index, strong excitonic response, and magnetic ordering. However, experimental methods for nanostructuring CrSBr to tailor its photonic properties are not yet well developed. Here we demonstrate photonic dispersion engineering in subwavelength-thick CrSBr slabs through patterning and creating slab photonic crystal structures. Using mechanical scanning probe lithography − a non-destructive technique benefiting from piezostage precision − we fabricate nanostructured CrSBr flakes of controlled geometry. Back-focal-plane reflectance spectroscopy measurements reveal modified photonic dispersion characteristics, with the photonic crystal dispersion tuned close to the CrSBr exciton resonance. The demonstrated engineering of the photonic dispersion in CrSBr, with tunable alignment between the photonic crystal resonance and the exciton energy, provides a base for further studies of exciton-photon interaction in 2D magnetic materials. 10.18721/JPM.183.141 535.016 scanning probe lithography van der Waals magnetics photonic crystal slab https://physmath.spbstu.ru/article/2025.82.41/

CNF RUS 209-213 0000-0002-7025-3527 National Research University “Higher School of Economics” Komarov Sergey serega.komarow@mail.ru

St. Petersburg, Russian Federation

Vainilovich Alexey a.vainilovich@ifanbel.bas-net.by 0009-0007-9304-6401 Grigorii Grigorii gafeygin@edu.hse.ru Sakharov Alexey val@beam.ioffe.rssi.ru Nikolaev Andrei Aen@mail.ioffe.ru Ivanov Konstantin kivanov@hse.ru 0000-0003-3686-935X National Research University “Higher School of Economics” (St. Petersburg branch) Moiseev Eduard emoiseev@hse.ru Kryzhanovskaya Natalia V. Natalia nkryzhanovskaya@hse.ru Nikitina Ekaterina mail.nikitina@mail.ru Tsatsulnikov Andrey andrew@beam.ioffe.ru Lutsenko Eugeniy e.lutsenko@ifanbel.bas-net.by 35379962200 Ioffe Physical Technical Institute of the Russian Academy of Sciences Zhukov Alexey zhukov@beam.ioffe.ru

Russia, 194021, St.Petersburg, Polytechnicheskaya 26

Optical properties of disk microresonators based on wide-bandgap III-N materials Fabrication, optical study, and mode modeling of III-N microdisk resonators with InGaN/GaN quantum wells on Al2O3 are presented. It is shown that the created epitaxial structures have high optical quality, and the microresonators support high-Q whispering gallery modes. 10.18721/JPM.183.142 535.37:621.315.592 III-N WGM microresonators InGaN/GaN quantum wells microdisk lasers https://physmath.spbstu.ru/article/2025.82.42/

CNF RUS 214-221 Arinushkina Kseniya k-arinushkina@mail.ru 0009-0002-7511-7740 Savelev Igor Davydov Vadim davydov_vadim66@mail.ru 0000-0002-9520-4596 Adadurov Aleksandr 0009-0002-4609-1692 Tsomaev Pavel Profile construction and determination of geometric parameters of the rolling surface of a railway wheel using a laser profilometer The problems arising in the processing of optical images formed from laser signals reflected from the surface of a railway wheel are considered. A design has been developed for the placement of laser emitters and photodetector devices for examining railway wheels in motion. A new algorithm has been developed aimed at improving the accuracy of constructing the profile of the rolling surface of the wheel. To process the recorded optical images in the laser radiation reflected from the surface of the wheel, a new technique based on the use of data filtering has been proposed, which uses a new algorithm that allows removing glare (a cloud of points with false data), outliers (single false points) and leaving only the necessary profile points. The new algorithm is based on the HDBSCAN (Hierarchical Density-Based Spatial Clustering of Applications with Noise) clustering algorithm. The algorithm makes it possible to exclude points forming errors during the construction of the profile of the rolling surface of the wheel. The use of a new design for the placement of optical elements and an algorithm made it possible to increase the accuracy of measurements of key wheel parameters, such as thickness, height and steepness of the ridge, and uniform rolling. 10.18721/JPM.183.143 620.1.08, 681.786.5, 681.7.014.3 laser radiation reflected signal optical image matrix photodetector wheel pair profile surface defects https://physmath.spbstu.ru/article/2025.82.43/

CNF RUS 222-225 0000-0003-2282-3895 Savelyev Dmitry Dmitry dmitrey.savelyev@yandex.ru The investigation of Laguerre–Gaussian (0,1) mode focusing in the near-field diffraction by subwavelength variable-height ring gratings The parameters of the height of individual zones of subwave ring gratings were established in this paper for which the formation of a long light needle (7.85 wavelengths) is observed in the near diffraction zone with azimuthal polarization of laser radiation. The possibility of reducing the focal spot size to 0.31 wavelengths with circular polarization of the Laguerre–Gauss mode (0,1) was also shown. 10.18721/JPM.183.144 535.42 Laguerre–Gaussian mode optical needle FDTD subwavelength ring gratings polarization https://physmath.spbstu.ru/article/2025.82.44/

CNF RUS 226-231 Neelova Angelina angelina.neelova@gmail.com Parfenov Vadim vadim_parfenov@mail.ru Laser cleaning of organic pigments on paper This paper is devoted to the investigation of laser cleaning of organic pigments on paper. In recent years, laser technologies have been widely used in the preservation of Cultural Heritage (CH). One of the main fields of laser application in this area is the cleaning of CH objects from various contaminations of natural or anthropogenic origin. Experimental results of laser cleaning with the Ytterbium pulsed fibre laser (1064 nm wavelength) of model samples of modern organic pigments on paper as well as Raman spectroscopy analysis of the obtained results are presented. 10.18721/JPM.183.145 544.032.65 cultural heritage laser cleaning pigments contaminations fibre laser https://physmath.spbstu.ru/article/2025.82.45/

CNF RUS 232-236 0009-0000-7489-4391 Kostina Dina Malo Dana malo.dana@mail.ru Moscow Institute of Physics and Technology (National Research University) Lizunova Anna anna.lizunova@gmail.com

Dolgoprudny, Moscow region, Russian Federation

Moscow Institute of Physics and Technology (National Research University) Kameneva Ekaterina kameneva.ei@phystech.edu

Dolgoprudny, Moscow region, Russian Federation

Optical properties of aluminum nanostructures modified by polymer coatings In this research, optical properties of Al films based on Al nanoparticles (Al NPs) with a particle size of 55 nm were studied by analyzing the absorption spectra before and after deposition of polymer coatings. Plasmonic Al nanostructures films were fabricated using spin-coating on quartz substrates, followed by sequential deposition of polymer using poly- L-lysine (PLL) and dextran. The obtained results showed that dextran coating did not induce significant spectral changes, whereas PLL provided a shift in the absorption resonance peak of Al films from 230 nm to 300 nm. Additionally, at an excitation wavelength of 325 nm, the photoluminescence enhancement of ZnO nanocrystals with 27 nm in particle size was investigated in the presence of Al nanostructures with and without PLL film as intermediate film. The results demonstrated that the increase in photoluminescence enhancement factor at an emission wavelength of 377 nm in the presence of PLL film between ZnO and Al films up to 68%. These findings proved that polymer coatings have a significant impact on the optical response of aluminum nanostructures. The obtained results provide a promising methodology for tuning their optical properties and plasmon-enhanced photoluminescence factor for many plasmonic and biosensing applications in the ultraviolet region. 10.18721/JPM.183.146 544.7 aluminum nanoparticles poly-L-lysine dextran zinc oxide nanoparticles plasmon resonance plasmon-enhanced photoluminescence ultraviolet spin-coating https://physmath.spbstu.ru/article/2025.82.46/

CNF RUS 237-241 Melnichenko Ivan imelnichenko@hse.ru 0000-0002-4110-1647 Shugabaev Talgat talgashugabaev@mail.ru Gridchin Vladislav gridchinvo@gmail.com Kryzhanovskaya Natalia V. Natalia nkryzhanovskaya@hse.ru Balakirev Sergey sbalakirev@sfedu.ru Solodovnik Maxim solodovnikms@sfedu.ru 35379962200 Ioffe Physical Technical Institute of the Russian Academy of Sciences Zhukov Alexey zhukov@beam.ioffe.ru

Russia, 194021, St.Petersburg, Polytechnicheskaya 26

Optical studies of InGaAs/GaAs quantum well mesa structures passivated with sol-gel SiO2 A remarkable increase in photoluminescence intensity for passivated mesa structures with InGaAs/GaAs quantum wells were demonstrated using the method of sol-gel SiO2 passivation. The photoluminescence signal enhancement up to 50 times for 1.25 μm diameter mesas after passivation was observed. The obtained results are promising for use in microlasers with active region based on InGaAs quantum wells. 10.18721/JPM.183.147 621.382.3 sol-gel passivation InGaAs quantum well photoluminescence https://physmath.spbstu.ru/article/2025.82.47/

CNF RUS 242-246 0009-0002-8847-2442 Tiushkevich Andrei 0009-0005-9354-4297 Pleshakov Pavel 0000-0003-0111-6542 Filatov Nikita Alferov University Bukatin Anton

St. Petersburg, Russian Federation

Development of heterogeneous bioinks with microgels for creating 3D tissue engineering models for drug screening To achieve clinical relevance, tissue-engineered constructs should replicate the metabolic activity and vasculature of native tissues and organs. Currently, conventional bioinks struggle to mimic the structural complexity of human tissues. Adding microgels with living cells into bioinks enables precise control over structural and functional complexity, offering a scalable platform for regenerative therapies and drug testing. The study introduces a heterogeneous bioink with microgels designed to bioprint tissue engineering constructs with complex architecture. To do this, we optimized the 1.5 % wt. alginate bioink composition adding Pluronic F-127 10 % wt. together with 3.75 % wt. gelatin microgels, fabricated via droplet microfluidics. An extrusion bioprinter was used to print test structures using this compound. As a result, it was possible to outline the first steps toward an effective protocol for creating tissue-engineered constructs from the multicomponent hydrogel solution with CT-26 eGFP cell viability up to 95% for the 10th cultivation day. 10.18721/JPM.183.148 57.085.23 tissue engineering hydrogel microparticles microgels droplet microfluidics 3D bioprinting https://physmath.spbstu.ru/article/2025.82.48/

CNF RUS 247-251 0000-0002-0061-6687 Alferov University Uvarov Alexander lumenlight@mail.ru 0000-0002-4894-6503 Alferov University Baranov Artem I. baranov_art@spbau.ru

St. Petersburg, Russian Federation

0000-0002-3503-7458 St. Petersburg Electrotechnical University "LETI" Maksimova Alina A. deer.blackgreen@yandex.ru 0000-0001-6869-1213 Alferov University Vyacheslavova Ekaterina cate.viacheslavova@yandex.ru 0009-0009-4023-6185 Alferov University Pozdeev Vyacheslav pozdeev99va@gmail.com

St. Petersburg, Russian Federation

0009-0005-6836-4091 Mikhaylov Oleg oleg.mikhaylov.00@gmail.com Nikitina Ekaterina mail.nikitina@mail.ru 0000-0002-7632-3194 Alferov University Gudovskikh Alexander gudovskikh@spbau.ru Structural and optical properties of InP layers obtained by plasma-enhanced atomic layer deposition at different temperatures Plasma-enhanced atomic layer deposition (PE-ALD) was employed to deposit indium phosphide (InP) thin films on silicon substrates at temperatures ranging from 250 °C to 380 °C. Using trimethylindium and phosphine as precursors, the influence of deposition temperature on film growth rate, structural, and optical properties was investigated. A stable growth per cycle (GPC) was observed within the 250–350 °C range, indicating self-limiting ALD behavior, while an increase in GPC at 380 °C suggested onset of non-ideal growth mechanisms. Raman spectroscopy revealed improved crystallinity with increasing temperature, demonstrated by intensified longitudinal optical phonon peaks. Photoluminescence measurements showed near-band-edge emission around 1.36–1.39 eV, with a blue shift and narrowing of the emission peak at higher temperatures, indicating enhanced optical quality and reduced defect density. 10.18721/JPM.183.149 538.975 indium phosphide atomic layer deposition plasma silicon raman spectroscopy photoluminescence https://physmath.spbstu.ru/article/2025.82.49/

CNF RUS 252-257 Eurov Daniil edan@mail.ru 0000-0003-2956-6561 Golubev Valery golubev@gvg.ioffe.ru Grudinkin Sergey grudink@gvg.ioffe.ru Ioffe Institute Kurdyukov Dmitry kurd@gvg.ioffe.ru

St. Petersburg, Russian Federation

0000-0002-1571-209X ITMO University Kirilenko Demid demid.kirilenko@mail.ioffe.ru

St. Petersburg, Russian Federation

0000-0003-0651-6860 Yakovleva Anastasiia Stovpiaga Ekaterina kattrof@gvg.ioffe.ru Morphological features of CVD-grown Si nanostructures in meso- and macroporous silicas Morphology of silicon nanostructures obtained by thermal chemical vapour deposition (CVD) method in mesoporous silica particles (mSiO2) and macroporous synthetic opal were studied. The proposed method allows obtaining a uniform Si layer on the surface of non-porous spherical silica particles forming macropores in opal, in contrary, to complete filling of 3-nm pores inside mesoporous particles with amorphous silicon. The thermal CVD provides for gradual change of pore filling which, in turn, leads to step-to-step variation of porosity characteristics in the case of mSiO2/Si and the modification of photonic crystal properties in the case of opal-Si. 10.18721/JPM.183.150 54.057 spherical particles silicon nanostructures silica mesopores opal https://physmath.spbstu.ru/article/2025.82.50/

CNF RUS 258-262 0009-0005-6836-4091 Mikhaylov Oleg oleg.mikhaylov.00@gmail.com 0000-0002-4894-6503 Alferov University Baranov Artem I. baranov_art@spbau.ru

St. Petersburg, Russian Federation

0009-0009-4023-6185 Alferov University Pozdeev Vyacheslav pozdeev99va@gmail.com

St. Petersburg, Russian Federation

0000-0002-0061-6687 Alferov University Uvarov Alexander lumenlight@mail.ru 0000-0002-3503-7458 St. Petersburg Electrotechnical University "LETI" Maksimova Alina A. deer.blackgreen@yandex.ru 0000-0001-6869-1213 Alferov University Vyacheslavova Ekaterina cate.viacheslavova@yandex.ru 0000-0002-7632-3194 Alferov University Gudovskikh Alexander gudovskikh@spbau.ru Capacitance characterization of GaN/InP multilayer structures This study investigates defect states in GaN/InP multilayer structures fabricated using plasma-enhanced atomic layer deposition (PEALD) for potential applications in high-efficiency multijunction solar cells. Deep-level transient spectroscopy (DLTS) and admittance spectroscopy were employed to characterize defects in the heterostructures. The DLTS spectra revealed a distinct peak in the temperature range of 230−300 K, corresponding to defect states with activation energies of 0.46−0.58 eV under various bias voltages (from 0 to +2 V and from −1 to 0 V). Admittance spectroscopy confirmed the presence of similar defects, demonstrating voltage-dependent activation energies in the range of 0.36−0.57 eV, which is likely associated with interface states at the GaN/InP interface. 10.18721/JPM.183.151 621.315.592 multilayer structures defects admittance spectroscopy DLTS https://physmath.spbstu.ru/article/2025.82.51/

CNF RUS 263-267 0000-0002-6222-5526 Verkhogliadov Grigorii g.verkhogliadov@skoltech.ru Ekgardt Alexey aleksei.ekgardt@metalab.ifmo.ru Semyonov Dmitrii dmitrii.semenov@metalab.ifmo.ru 0000-0003-4552-3991 Anoshkin Sergey sergey.anoshkin@metalab.ifmo.ru Ratmanova Nina nina.ratmanova@fccho-moscow.ru 0000-0002-1793-6812 Pushkarev Anatoly anatoly.pushkarev@metalab.ifmo.ru Phase control of quasi-2D halide perovskite by post-treatment and antisolvent treatment techniques The fabrication of efficient and stable deep blue halide perovskite light-emitting diodes has attracted significant interest nowadays due to their potential applications in next-generation display technologies. Quasi-2D halide perovskite seems to be perfect material for this application, owing to their unique optoelectronic properties and tunability. However, during the deposition from stoichiometrically clear phase solution mixture of phases is forming in the thin film leading to redshift of luminescence peak. This shift occurs due to energy transfer between different phases, affecting the performance and stability of the light-emitting diode. In this study, we explore various approaches for phase control in multiple quantum well structures to achieve stable and efficient emission in the blue region. Additionally, we conduct a comparative analysis of two distinct quasi-2D ligands used in the synthesis of these materials, evaluating their influence on the optical and electronic properties. We study possible ways for synthesis of pure phase quasi-2D perovskite thin films for their implementation in light-emitting diodes. 10.18721/JPM.183.152 539.216.2 quasi-2D halide perovskite phase control photoluminescence absorption spectroscopy https://physmath.spbstu.ru/article/2025.82.52/

CNF RUS 268-272 Voronin Anton a.voronin1988@mail.ru Bauman Moscow State Technical University Makeev Mstislav m.makeev@bmstu.ru

Moscow, Russian Federation

Parshin Bogdan parshbgal@bmstu.ru Khartov Stanislav khartov.sv@ksc.krasn.ru Optical and radio-frequency properties of silver mesh transparent conductor with irregular structure The article presents the results of studying the optical and radio-frequency properties of silver irregular mesh transparent conductors obtained using an original self-organized template. It is shown that variation in the thickness of the deposited silver allows easy control of the surface resistance, which is the determining factor affecting the transmission in the radio-frequency range. In particular, we have obtained an irregular silver mesh, which has a surface resistance of 1.44 Ω/sq with an optical transparency in the visible range of about ~81%. This combination of optoelectric parameters made it possible to achieve an extremely low transmittance in the range of 0.7−14 GHz, an average of −37.34 dB over the range, which means that this mesh blocks 99.9815% of radiowave. 10.18721/JPM.183.153 537.874.76; 621.391.8 cracked template transparent conductor irregular mesh shielding efficiency https://physmath.spbstu.ru/article/2025.82.53/

CNF RUS 273-277 Parshin Bogdan parshbgal@bmstu.ru Voronin Anton a.voronin1988@mail.ru Makarova Kamila mkt@bmstu.ru Bauman Moscow State Technical University Makeev Mstislav m.makeev@bmstu.ru

Moscow, Russian Federation

Butina Maria masha.butina.54@mail.ru Fadeev Yuriy daf.hf@list.ru 0000-0003-0672-4627 Mikhalev Pavel pamikhalev@bmstu.ru Hydyrova Selbi hydyrova.selbi@ya.ru Moiseev Konstantin k.moiseev@bmstu.ru ITO films as a functional material for THz radiation modulation In this paper, we investigate the terahertz (THz) transmittance and band gap (BG) properties of magnetron sputtered indium tin oxide (ITO) thin films. The THz transmittance was measured using THz time domain spectroscopy, which provides insight into the interaction of terahertz radiation and free carriers inside the films. The band gap was determined from spectrophotometric data using Tauc diagrams, which allowed the analysis of both direct and indirect electron transitions. The results showed that the THz transmittance decreases with increasing film thickness, primarily due to the increase in free carrier absorption associated with higher conductivity and carrier concentration in thicker films. The observed optical band gap values depend on the Burstein–Moss effect caused by the filling of low-energy states in the conduction band with free electrons. The obtained results demonstrate a close relationship between the electronic structure and terahertz response in ITO films, confirming their potential for efficient control of terahertz radiation and application in optoelectronic devices. 10.18721/JPM.183.154 53.082.534, 539.23 indium tin oxide Terahertz transmittance band gap THz time-domain spectroscopy spectrophotometry Tauc plots https://physmath.spbstu.ru/article/2025.82.54/

CNF RUS 278-282 0000-0002-4110-1647 Shugabaev Talgat talgashugabaev@mail.ru Alferov University Kharchenko Anton antoshkerrr@gmail.com

St. Petersburg, Russian Federation

0000-0002-0374-7033 Dautov Albert 0000-0001-7143-6686 Kusnetsov Alexey alkuznetsov1998@gmail.com Lendyashova Vera erilerican@gmail.com Kryzhanovskaya Natalia V. Natalia nkryzhanovskaya@hse.ru Reznik Rodion moment92@mail.ru Gridchin Vladislav gridchinvo@gmail.com Cirlin George george.cirlin@mail.ru Optical characterization and surface plasmon polariton mode simulation of GaN/InGaN nanowires on Ag/AlOx film for plasmonic nanolasers Plasmonic nanolasers based on semiconductor nanowires are presently attracting wide interest due to the breaking in the light diffraction limit and the deep subwavelength mode operation. In this work, we synthesize and investigate the optical properties of GaN nanowires with InGaN quantum wells as the core element of plasmonic nanolasers. The results of modeling the electric field intensity distribution for propagating modes and dispersion curve of surface plasmon polaritons in the studied nanowires placed on the AlOх-coated atomically flat Ag film confirm the formation of hybrid plasmonic modes and the viability of these structures for subwavelength light confinement and nanolaser applications. 10.18721/JPM.183.155 535.3 InGaN GaN nanowires nanoplasmonics nanolasers molecular beam epitaxy photoluminescence numerical simulations https://physmath.spbstu.ru/article/2025.82.55/

CNF RUS 283-286 0000-0002-0374-7033 Dautov Albert 0000-0001-5547-9387 Alferov University Fedorov Vladimir fedorov_vv@spbstu.ru Kotlyar Konstantin konstantin21kt@gmail.com Lendyashova Vera erilerican@gmail.com 0000-0002-4110-1647 Shugabaev Talgat talgashugabaev@mail.ru Gridchin Vladislav gridchinvo@gmail.com St. Petersburg State University Shtrom Igor i.shtrom@spbu.ru

St. Petersburg, Russian Federation

0000-0002-7566-2522 Sibirev Nikolai Effect of short-term heating on the morphology of AlF3 microstructures This work explores thermally modified AlF3 microstructures synthesized via aluminum-zinc reaction in hydrofluoric acid. Brief heating produces cushion-like morphologies, while room-temperature growths results in cracked crystals. The thermally treated samples exhibit anisotropic brittleness and easy delamination, suggesting weak interlayer bonding. SEM-EDS and XRD analyses reveal structure-property relationships, offering insights for tailored AlF3 microstructures in electronics and nanomaterials. 10.18721/JPM.183.156 54.052 aluminum fluoride rosenbergit XRD analyze microstructures https://physmath.spbstu.ru/article/2025.82.56/

CNF RUS 287-292 Volodina Daria Eurov Daniil edan@mail.ru Balysh Zoya Ioffe Institute Kurdyukov Dmitry kurd@gvg.ioffe.ru

St. Petersburg, Russian Federation

Stovpiaga Ekaterina kattrof@gvg.ioffe.ru Control over the Stöber silica particles size within two orders of magnitude by tailoring the nucleation A panoscopic approach for governing the size of Stöber silica particles over a wide length scale, from tens of nanometers to several microns has been suggested. Low-size particles (10–400 nm) are obtained by changing the silica precursor, mid-size particles (0.4–0.7 mm) are synthesized with variation of ammonia concentration, large particles (up to 4 mm) are made by successive growth method. 10.18721/JPM.183.157 54.057 amorphous silica Stöber particles successive growth tetraethoxysilane 3-methacryloxypropyltrimethoxysilane https://physmath.spbstu.ru/article/2025.82.57/

CNF RUS 293-297 0000-0001-9319-2475 Research Institute of Electronic and Mechanical Devices Novichkov Maksim

Penza, Russian Federation

0000-0001-9602-7221 Research Institute of Electronic and Mechanical Devices Gurin Sergey

Penza, Russian Federation

Shepeleva Anastasia eduard.shepelev.67@mail.ru Pecherskaya Ekaterina pea1@list.ru Penza State University Golubkov Pavel golpavpnz@yandex.ru

Penza, Russian Federation

0009-0001-4255-1383 Penza State University Maksov Andrey

Penza, Russian Federation

0009-0009-4548-3724 Agafonov Dmitriy Effect of synthesis modes on the properties of microarc oxide coatings The article presents studies of the physical patterns of formation of oxide coatings on aluminum substrates by microarc oxidation. Correlation dependences of the influence of technological modes, such as current density and time, on the properties of microarc oxidation coatings have been established. A method for monitoring the quality parameters of formed oxide coatings in real time is proposed, based on the analysis of the deviation of the voltage–time curves from the traditional piecewise linear form. The results of the study can be used in the development of intelligent algorithms for creating a digital twin of the microarc oxidation process. 10.18721/JPM.183.158 541.138 microarc oxidation oxide coating coating parameters controlled synthesis technological modes https://physmath.spbstu.ru/article/2025.82.58/

CNF RUS 298-301 Zalessky Aleksandr aleksandr.zalesskij@phystech.edu Osychenko Alina alina.chemphys@gmail.com The effect of femtosecond laser on DNA destruction assisted with SYTO fluorescent dye Tightly-focused femtosecond laser radiation is widely used as a convenient tool for manipulating biological objects. The method of femtosecond laser surgery proved to be useful for the multiple applications, from eye correction to the subcellular structures destruction. Among other things, femtosecond laser surgery shown to be used as a tool for DNA destruction, which could be beneficial for assisted reproductive technologies in humans. In the context of the development of this method, the study of the DNA laser assisted destruction efficiency is of significant importance. In this work, DNA laser assisted destruction efficiency in presence of SYTO fluorescent dye was studied. 10.18721/JPM.183.159 53.047 DNA damage femtosecond laser surgery https://physmath.spbstu.ru/article/2025.82.59/

CNF RUS 302-305 Kurilova Uliana kurilova_10@mail.ru Murashko Denis Suchkova Victoria molodykh1999@gmail.com Suetina Irina Mezentseva Marina Russu Leonid National Research University of Electronic Technology Gerasimenko Alexander gerasimenko@bms.zone

Moscow, Russian Federation

Nanomaterials based on carbon framework for cells stimulation The work is devoted to the technology of formation and study of physical and chemical characteristics and biocompatibility of nanomaterials based on hybrid structures of carbon nanotubes and reduced graphene oxide, obtained by spray deposition and laser processing with nanosecond pulsed laser of 1064 nm wavelength, for bioelectronics applications. The formation of a connected structure between the components was proved with scanning electron microscopy, the optimal power of laser processing was found as 0.07 W to obtain the largest number of connections between carbon nanotubes and reduced graphene oxide, thanks to which high electrical conductivity was achieved. The experiments on electrical stimulation in vitro were provided with the developed setup based on a culture plate, an impulse generator and electrodes connected to samples. Cells seeded on the obtained structures with electrical stimulation demonstrate better proliferation and monolayer forming compared to the control sample. Thus, the developed structures can be successfully used as part of various bioelectronic devices for improved tissue recovery using electrical stimulation. 10.18721/JPM.183.160 544.032.65 carbon nanotubes reduced graphene oxide bioelectronics fibroblasts electrical stimulation https://physmath.spbstu.ru/article/2025.82.60/

CNF RUS 306-311 0009-0004-8401-0181 Popov Alexander alexander_popov_work@mail.ru Davydov Vadim davydov_vadim66@mail.ru Shavshin Artyom shavshin2107@gmail.com Boldarev Dmitriy boldarev2001@inbox.ru Klimenko Daria dasha.klimenko.01@inbox.ru Dmitriev Roman Rusher.official@gmail.com Development of an inter-satellite data transmission network for space debris evasion systems The space debris problem was revealed. Research of space debris situation data from open sources of information such as European Space Agency was carried out. Methods of satellite protection were revealed. Collision avoidance system was proposed. It consists of satellites with a built-in location system and low speed mesh-network. Location satellites are used for long-range precise detection of objects with trajectories which are dangerous for protected spacecrafts, while the data is transmitted with CubeSat chain. The aim of this work is to develop an inter-satellite network for technical information exchange. As a result of the research, LoRa technology is selected because of low power consumption and significant coverage range of a single device. The network operation was simulated using MATLAB software and calculated results confirmed that the proposed method is adequate. 10.18721/JPM.183.161 004.738.2. inter-satellite network LoRa network simulation mesh network space debris collision avoidance https://physmath.spbstu.ru/article/2025.82.61/

CNF RUS 312-316 0000-0002-1098-0300 Bagrov Alexander alexander.bagrov00@mail.ru 0000-0001-8682-4956 Bashkirov Evgeniy bash@ssau.ru Qubit-qubit entanglement in the Tavis–Cummings model with two independent resonators In this paper, a three-qubit Tavis–Cummings model with two independent lossless single-mode resonators is considered. It is assumed that the initial states of the resonator fields are thermal fields and the qubits are in genuine entangled W- and GHZ-type states. For the model under study and the specified initial states of the resonator fields and qubits, we have exactly solved the quantum Liouville equation for the full density matrix. The full density matrix was used to calculate the entanglement parameters – negativity and fidelity. The computer simulation results showed that in the investigated model, the entanglement for all initial qubit states breaks down rapidly with increasing intensity of the thermal fields of the resonators compared to the previously investigated three-qubit models. Moreover, a sudden death of entanglement is observed even for vacuum resonator fields. 10.18721/JPM.183.162 530.145.83 independent resonators fidelity qubits negativity sudden death of entanglement single-photon transitions thermal field entanglement https://physmath.spbstu.ru/article/2025.82.62/