<?xml version="1.0" encoding="utf-8"?>
<journal>
  <titleid/>
  <issn>2304-9782, 2618-8686, 2405-7223</issn>
  <journalInfo lang="ENG">
    <title>St. Petersburg Polytechnic University Journal: Physics and Mathematics</title>
  </journalInfo>
  <issue>
    <volume>18</volume>
    <number>2</number>
    <altNumber> </altNumber>
    <dateUni>2025</dateUni>
    <pages>1-164</pages>
    <articles>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>9-21</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0001-8179-3169</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Goltaev </surname>
              <initials>Aleksandr </initials>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0001-7521-3754</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University, RAS</orgName>
              <surname>Fedina</surname>
              <initials>Sergey</initials>
              <email>fedina.serg@yandex.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0001-5547-9387</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Fedorov</surname>
              <initials>Vladimir</initials>
              <email>fedorov_vv@spbstu.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0002-8661-4083</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Mozharov</surname>
              <initials>Alexey</initials>
              <email>mozharov@spbau.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0001-8440-494X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Novikova</surname>
              <initials>Kristina</initials>
              <email>novikova_k@spbau.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <authorCodes>
              <orcid>0000-0002-3503-7458</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>St. Petersburg Electrotechnical University "LETI"</orgName>
              <surname>Maksimova</surname>
              <initials>Alina A.</initials>
              <email>deer.blackgreen@yandex.ru</email>
            </individInfo>
          </author>
          <author num="007">
            <authorCodes>
              <orcid>0000-0002-4894-6503</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Baranov</surname>
              <initials>Artem I.</initials>
              <email>baranov_art@spbau.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="008">
            <authorCodes>
              <orcid>0000-0002-3640-677X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Kaveev</surname>
              <initials>Andrey</initials>
              <email>kaveev@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="009">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Pavlov </surname>
              <initials>Alexander </initials>
              <email>a.pavlov@physics.spbstu.ru</email>
            </individInfo>
          </author>
          <author num="010">
            <authorCodes>
              <orcid>0009-0006-3064-4175</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University </orgName>
              <surname>Miniv </surname>
              <initials>Dmitriy </initials>
            </individInfo>
          </author>
          <author num="011">
            <authorCodes>
              <orcid>0000-0003-4123-4375</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Ustimenko</surname>
              <initials>Ratmir</initials>
              <email>ustimenko_rv@spbstu.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="012">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Vinnichenko</surname>
              <initials>Maxim</initials>
              <email>mvin@spbstu.ru</email>
            </individInfo>
          </author>
          <author num="013">
            <authorCodes>
              <orcid>0000-0001-9792-045X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Mukhin</surname>
              <initials>Ivan</initials>
              <email>muhin_is@spbstu.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Infrared photodetectors based on InAsP epitaxial nanowires on silicon</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In the paper, the upgraded technology of forming the epitaxial arrays of InAsP nanowires (NWs) synthesized on silicon substrates using molecular beam epitaxy has been presented. The optical and electrophysical properties of the NWs were studied. Based on the grown structures, a prototype of a short-wave infrared photodiode for a range from 1.2 µm to 1.9 µm was fabricated. Its band structures were numerically simulated. The temperature dependencies of the current-voltage characteristics and the spectral sensitivity of the photodetector prototype based on the NWs were experimentally studied. The external quantum efficiency of photoconversion of radiation with a wavelength of 1380 nm was found to be about 0.25% at 100 K.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.18201</doi>
          <udk>621.383.52</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>InAsP</keyword>
            <keyword>silicon substrate</keyword>
            <keyword>molecular beam epitaxy</keyword>
            <keyword>nanowires</keyword>
            <keyword>photodetector</keyword>
            <keyword>quantum efficiency</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.80.1/</furl>
          <file>01_9-21_18(2)2025.pdf</file>
        </files>
      </article>
      <article>
        <artType>SCO</artType>
        <langPubl>RUS</langPubl>
        <pages>22-29</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0001-6034-7757</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Pacific National University</orgName>
              <surname>Obrazcov </surname>
              <initials>Kirill</initials>
              <email>2018102293@pnu.edu.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0002-5410-8661 </orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Computing Center of the Far Eastern Branch of the Russian Academy of Sciences</orgName>
              <surname>Chibisov</surname>
              <initials>Andery</initials>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0001-7466-086X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Omsk State University Named after Dostoevsky</orgName>
              <surname>Mamonova</surname>
              <initials>Marina</initials>
              <email>mamonovamv@omsu.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">The influence of hole states on the electronic and electrostatic properties of 2D layers based on the silicon-germaniumsilicon heterostructure</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The performance of a hole qubit in the Si/Ge/Si heterostructure is considered in this work. For this purpose, a quantum mechanical study using density functional theory and the pseudopotential method has been carried out. The zone structure and density of electronic states were constructed for the elementary structure. It was found that the bulk of these states are localized in the energy range from –2 to –4 eV. For the constructed supercell the yield work was calculated and the contribution of electron hole to the electrostatic potential of the system was evaluated. The analysis of the obtained results showed that the change of the yield work in the system is associated with the shift of the energy vacuum level.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.18202</doi>
          <udk>537.9:004.94</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>silicon</keyword>
            <keyword>germanium</keyword>
            <keyword>density functional theory</keyword>
            <keyword>two-dimensional layer</keyword>
            <keyword>work function</keyword>
            <keyword>heterostructure</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.80.2/</furl>
          <file>02_22-29_18(2)2025.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>30-40</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-4318-7050</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Antonova </surname>
              <initials>Olga</initials>
              <email>antonova_ov@spbstu.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0009-0003-5702-2251</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Ivanov</surname>
              <initials>Maksim</initials>
              <email>ivanov.m@compmechlab.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0002-1025-0148</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Mikhailov </surname>
              <initials>Aleksandr</initials>
              <email>michailov@compmechlab.com</email>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0009-0002-2129-1591</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>LLC “Tetral”</orgName>
              <surname>Kuzmin </surname>
              <initials>Valerii</initials>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Application of mathematical modeling for describing the behavior of layered panels with a tetrahedral core</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In the paper, mathematical modeling methods for describing the behavior of sandwich panels with a tetrahedral core under various loads have been used, and a series of numerical calculations carrying out by the ANSYS software. In so doing the previously obtained effective elastic characteristics were taken, which made it possible to replace the direct modeling of the tetrahedral core structure with elements of a simple form using orthotropic material with equivalent characteristics. The problem of the plate’s three-point bending was solved, and a deformed state and deflection character of the panel were analyzed. The necessity of applying the heteromodular elasticity theory when modeling such objects and of taking into account the effective elastic characteristics obtained by tension and compression of the periodicity cell was established. Recommendations were given for the use of periodicity cells when computing the iterative changes in material properties and effective characteristics obtained during tension and compression.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.18203</doi>
          <udk>539.3</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>tetrahedral core</keyword>
            <keyword>layered panel</keyword>
            <keyword>effective elastic characteristics</keyword>
            <keyword>finite element method</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.80.3/</furl>
          <file>03_30-40_18(2)2025.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>41-48</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-6210-4003</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Ermak</surname>
              <initials>Sergey</initials>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0003-0346-8349</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Semenov</surname>
              <initials>Vladimir</initials>
              <email>vladimir_semenov@mail.ru</email>
              <address>Russia, 195251, St.Petersburg, Polytechnicheskaya, 29</address>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0009-0005-8838-6845</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University </orgName>
              <surname>Sergeeva</surname>
              <initials>Maria </initials>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">The effect of the magnetic field on the shielding efficiency in a rubidium atomic clock</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The paper presents the experimental study results of the dependence of the longitudinal shielding coefficient of a magnetic shield (in the direction of the shield axis) on the strengths and mutual orientation of the operational internal and additional external magnetic fields of a small-sized rubidium atomic clock (RAC). In this case, an additional field magnetizes the RAC’s magnetic shield from the outside and penetrates inside it. The significant influence of these fields in their interrelation on the shielding properties of the magnetic shield of the RAC has been found. The obtained results allowed us to determine the longitudinal RAC-shielding coefficient at the effective values of the operational and additional magnetic fields and, as a consequence, to compensate for the effect of geomagnetic field variations on the frequency of the onboard RAC.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.18204</doi>
          <udk>53.098</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>rubidium atomic clock</keyword>
            <keyword>magnetic field</keyword>
            <keyword>magnetic screen</keyword>
            <keyword>longitudinal shielding coefficient</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.80.4/</furl>
          <file>04_41-48_18(2)2025.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>49-59</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0001-8594-9423</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University </orgName>
              <surname>Kuptsov</surname>
              <initials>Vladimir</initials>
              <email>kuptsov@spbstu.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">The X-ray absorption immersion technology for enrichment of diamond ores: Physical foundations and practical implementation</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The paper presents physical principles of X-ray absorption immersion technology (XRAIT) based on recording X-ray radiation passed through diamond-containing ore, pore spaces between the pieces of which are preliminarily filled with an immersion medium (IM). The energy range of X-ray photons where the diamond is more transparent than the ore components has been determined. Based on the proposed approximation of the mass attenuation coefficients of elements by the sum of two power functions, a justification for a conscious choice of the mass attenuation coefficient of the IM equal to the average value for all ore components was carried out taking into account their weight content. An optimal composition of the IM in the form of a bulk material, namely aluminum-zinc alloy powder, was proposed. Experiments conducted on a developed and manufactured prototype of the separator confirmed the possibility of using the XRAIT with significant advantages over analogues.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.18205</doi>
          <udk>622.7</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>X-ray absorption technology</keyword>
            <keyword>immersion medium</keyword>
            <keyword>mass attenuation coefficient</keyword>
            <keyword>X-ray radiation</keyword>
            <keyword>diamonds</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.80.5/</furl>
          <file>05_49-59_18(2)2025.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>60-68</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0003-0985-5964</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Institute for Analytical Instrumentation of the RAS</orgName>
              <surname>Berdnikov</surname>
              <initials>Alexander</initials>
              <email>asberd@yandex.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0009-0001-8247-6410</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Egorova </surname>
              <initials>Anastasia</initials>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0002-6162-9481</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Krasnova</surname>
              <initials>Nadezhda</initials>
              <email>n.k.krasnova@mail.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0002-0873-8849</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Institute for Analytical Instrumentation of the Russian Academy of Sciences</orgName>
              <surname>Masyukevich</surname>
              <initials>Sergey</initials>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0003-3514-8577</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Solovyev</surname>
              <initials>Konstantin</initials>
              <email>k-solovyev@mail.ru</email>
              <address>Russia, 195251, St.Petersburg, Polytechnicheskaya, 29</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">The influence of field misalignment and electric field asymmetry on the stability zones of a combined ion trap</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This study continues a series of articles devoted to the operating features of ion-optical devices with periodic electric power supply and constant homogenous magnetic field, used in mass spectrometers. It has been shown how the structure of combined ion trap stability diagram is changed when the trap configuration deviates from the ideal one. The influence of an angle between the electric field symmetry axis and a magnetic field direction as well as the influence of the electric field asymmetry on the pattern of stability zones were found. The results obtained are worthy of use both for estimating the impact of manufacturing defects and for designing new nonclassical ion traps.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.18206</doi>
          <udk>621.384.8</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>combined ion trap</keyword>
            <keyword>stability zones</keyword>
            <keyword>mass spectrometry</keyword>
            <keyword>ion confinement</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.80.6/</furl>
          <file>06_60-68_18(2)2025.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>69-81</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0001-9626-7612</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Ryabko</surname>
              <initials>Andrey</initials>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0009-0009-6273-1478</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Ioffe Institute of RAS</orgName>
              <surname>Ovezov</surname>
              <initials>Maksat</initials>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0003-0195-8870</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Maximov</surname>
              <initials>Alexander</initials>
              <email>aimaximov@mail.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0002-6953-9958</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>St. Petersburg Electrotechnical University "LETI"</orgName>
              <surname>Permiakov</surname>
              <initials>Nikita</initials>
              <email>nvpermiakov@etu.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Belarusian State University of Informatics and Radioelectronics</orgName>
              <surname>Tuchkovskiy </surname>
              <initials>Alexander</initials>
              <email>a.tuchkovskij@bsuir.by</email>
            </individInfo>
          </author>
          <author num="006">
            <authorCodes>
              <orcid>0000-0002-6796-8994</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Belarusian State University of Informatics and Radioelectronics</orgName>
              <surname>Igor </surname>
              <initials>A.</initials>
              <email>vrublevsky@bsuir.edu.by</email>
              <address>6 Petrus Brovka St., Minsk, 220013, Republic of Belarus</address>
            </individInfo>
          </author>
          <author num="007">
            <authorCodes>
              <orcid>0000-0002-4181-6669</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>St. Petersburg Electrotechnical University "LETI"</orgName>
              <surname>Muratova</surname>
              <initials>Ekaterina</initials>
            </individInfo>
          </author>
          <author num="008">
            <authorCodes>
              <orcid>0000-0001-5449-4446</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Aleshin</surname>
              <initials>Andrey</initials>
              <email>aleshin@transport.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="009">
            <authorCodes>
              <orcid>0000-0001-6500-5492</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>St. Petersburg Electrotechnical University "LETI"</orgName>
              <surname>Moshnikov</surname>
              <initials>Vyacheslav</initials>
              <email>vamoshnikov@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Polycrystalline films of MAxMEA1−xPbI3 hybrid perovskites obtained by the solution method: Crystallization and morphology</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this work, the morphological features of polycrystalline films of hybrid perovskites MAxMEA1−xPbI3 formed by a single-stage centrifugation method from DMF and DMSO solutions (4:1) have been investigated. The results of the studies showed that an increase in the proportion of monoethanolammonium in MAxMEA1−xPbI3 led not only to a change in the absorption spectra and an increase in the interplanar distances of the crystal lattice, but also to a significant change in the morphology of the films from elongated split crystallites to a uniform coating of nanocrystallites. An increase in the proportion of monoethanolammonium iodide in the solution also improved the wettability of solutions and the continuity of the coating of substrates with hybrid perovskite MAxMEA1−xPbI3 without additional surface activation processes. The increased band gap of MAxMEA1−xPbI3 compared to MAPbI3 makes these hybrid perovskites attractive for use in tandem solar cells.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.18207</doi>
          <udk>538.91</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>hybrid perovskites</keyword>
            <keyword>polycrystalline film</keyword>
            <keyword>solar cell</keyword>
            <keyword>split crystallite</keyword>
            <keyword>morphology</keyword>
            <keyword>crystallization</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.80.7/</furl>
          <file>07_69-81_18(2)2025.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>82-92</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-5736-6957</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Kazan National Research Technological University</orgName>
              <surname>Zagidullina </surname>
              <initials>Inna</initials>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0003-4354-8984</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Kazan National Research Technological University</orgName>
              <surname>Guzhova </surname>
              <initials>Alina</initials>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0001-9604-4769</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Herzen State Pedagogical University of Russia</orgName>
              <surname>Karulina</surname>
              <initials>Elena</initials>
              <email>karulina@mail.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0009-0002-3569-4981</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Herzen State Pedagogical University of Russia</orgName>
              <surname>Kulemina</surname>
              <initials>Sofya</initials>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">The effect of PLA-based composite material history on its electret properties</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This study reveals the effects of manufacturing methods and composition of the films based on polylactic acid (PLA) and fine fillers of different nature (aerosil, white silica and starch) and concentration on the electret properties (EP). The methods were solution casting (I) and compression molding (II). PLA films manufactured via method II exhibited a significantly higher electret effect when subjected to unipolar corona discharge than the films obtained by method I. The difference in the EP was proved to be attributed to the presence of polar liquid molecules (trichloromethane, water) within the samples produced using method I enhancing the electrical conductivity of the samples. The samples showed a tendency for the EP parameters to increase when the dispersed particles of fine fillers were added to the pure PLA. An explanation for this phenomenon has been proposed. The composition of PLA with 4% white silica had the best electret properties.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.18208</doi>
          <udk>538.915</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>electret</keyword>
            <keyword>polylactic acid</keyword>
            <keyword>polymer</keyword>
            <keyword>dispersed filler</keyword>
            <keyword>white silica</keyword>
            <keyword>aerosil</keyword>
            <keyword>starch</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.80.8/</furl>
          <file>08_82-92_18(2)2025.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>93-108</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0003-0542-0939</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Gomel State Technical University named after P. O. Sukhoi</orgName>
              <surname>Kiselevich </surname>
              <initials>Valentin</initials>
              <address>48 October Ave., Gomel, 246029, Republic of Belarus</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">An electrical lifetime of polymers in terms of the catastrophe theory</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The present study analyzes the known expressions establishing exponential and power relationships between the lifetime of polymer dielectrics and the strength of the electric field acting on them. The work notes the necessity of mathematical substantiation of the known power expression for the field dependence of electrical lifetime. We obtained the equation of dependence of the electrical lifetime of polymeric dielectrics on the value of the applied electric field strength within the framework of the mathematical catastrophe theory. The study has the performance of quantitative estimation of the parameters of this equation for paper, epoxy and polyethylene terephthalate electrical insulation. We established a good agreement between the literature experimental data and the field dependences of the electrical lifetime of polymers plotted by the proposed equation. The study analyses geometric images of the fold catastrophe function reflecting the nature of the change in the dimensionless parameter of the rate of damage accumulation in a polyethylene terephthalate film under varying electric field strength. The paper shows the prospect of using the mathematical apparatus of catastrophe theory to describe experimental regularities of changes in the electrical strength properties of polymer dielectrics in strong electric fields.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.18209</doi>
          <udk>621.315.61: 51-74</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>polymer dielectric</keyword>
            <keyword>electrical lifetime</keyword>
            <keyword>electrical breakdown</keyword>
            <keyword>electric field strength</keyword>
            <keyword>catastrophe theory</keyword>
            <keyword>fold catastrophe</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.80.9/</furl>
          <file>09_93-108_18(2)2025.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>109-118</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University </orgName>
              <surname>Zolotorevsky</surname>
              <initials>Nikolai</initials>
              <email>zolotorevsky@phmf.spbstu.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>NRC “Kurchatov Institute” – CRISM “Prometey”</orgName>
              <surname>Belikova</surname>
              <initials>Yulia</initials>
              <email>belikjul@ya.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0001-6732-7217</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>NRC “Kurchatov Institute” – CRISM “Prometey”</orgName>
              <surname>Petrov</surname>
              <initials>Sergey</initials>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0002-9431-7097</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>NRC “Kurchatov Institute” – CRISM “Prometey”</orgName>
              <surname>Zisman </surname>
              <initials>Alexander </initials>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Formation of bainite below martensite start temperature in quenching low carbon steel</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">According to the phase transformation kinetics that we recorded by dilatometry in rapid cooling of low carbon steel, some amount of isothermal bainite appeared in the middle of martensitic temperature range. Presumably caused by adiabatic heating in the exothermal transformation, such an unexpected effect was confirmed by TEM data on the lath thickness, dislocation density and carbide particles. Furthermore, to assess a volume fraction of the detected bainite, statistics of crystal curvature (orientation gradient) was analyzed in terms of EBSD data. The combined analysis of results obtained using those three techniques suggests that certain amount of lath type bainite is formed not only below the martensite start temperature but also slightly above it.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.18210</doi>
          <udk>538.91; 548.74</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>microstructure</keyword>
            <keyword>martensite</keyword>
            <keyword>bainite</keyword>
            <keyword>isothermal transformation</keyword>
            <keyword>quenching</keyword>
            <keyword>low carbon steel</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.80.10/</furl>
          <file>10_109-118_18(2)2025.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>119-131</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0003-0309-5917</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Berdnikov</surname>
              <initials>Yaroslav</initials>
              <email>berdnikov@spbstu.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0003-3298-3702</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Ivanishchev</surname>
              <initials>Dmitry</initials>
              <email>ivanishchev_da@pnpi.nrcki.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0002-3395-0454</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Kotov</surname>
              <initials>Dmitry</initials>
              <email>dmitriy.kotov@gmail.com</email>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0009-0001-9974-0169</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Malaev</surname>
              <initials>Mikhail</initials>
              <email>mmalayev@gmail.com</email>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0009-0007-9874-9819</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Petersburg Nuclear Physics Institute named by B. P. Konstantinov of NRC «Kurchatov Institute»</orgName>
              <surname>Riabov</surname>
              <initials>Andrei</initials>
              <email>andrei.riabov@cern.ch</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Feasibility to measure the properties of charged K*(892) mesons and Σ(1385) baryons in collisions of bismuth nuclei at an energy of 9.2 GeV in the NICA collider using the MPD experimental setup</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">We report results on a feasibility study of measuring the properties of K*(892)± and Σ(1385)± resonances in collisions of bismuth nuclei (Bi) at an energy of 9.2 GeV using the MPD detector at the NICA collider. The dependencies of the process’es key parameters on the transverse momentum for different intervals of centrality of Bi + Bi collisions were obtained in the rapidity range from –0.5 to +0.5 using model calculations. The evaluations of the mass resolution, detection efficiency of the MPD detector and the transverse momentum spectra for the K*(892)± and Σ(1385)± resonances were made. The sample size of Bi + Bi collision data that allowed the K*(892)± and Σ(1385)± resonances properties to be reconstructed with a sufficiently good accuracy to conduct a study of the K*(892)± and Σ(1385)± resonances production was estimated.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.18211</doi>
          <udk>539.126.3, 539.126.6</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>bismuth nuclei collisions</keyword>
            <keyword>production</keyword>
            <keyword>resonance</keyword>
            <keyword>NICA collider</keyword>
            <keyword>MPD detector</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.80.11/</furl>
          <file>11_119-131_18(2)2025.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>132-143</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0003-4292-0959</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Golovitski</surname>
              <initials>Alexander</initials>
              <email>alexandergolovitski@yahoo.com</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">An inverse problem of differential equation systems in connection with the study of semiconductor materials and biomedical processes</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This paper puts forward a new method of solving the problem for calculating the unknown and non-measurable parameters, that are included in a system of differential equations, whose solution adequately reproduces the given experimental data, but has no analytical form. The problems of this kind are often found in physical research of semiconductor materials, biomedical processes and in electronics. The novelty lies in the proposed idea of numerical calculations of partial derivatives which has made it possible to adapt the Levenberg – Marquardt method of non-linear approximations for solving the said problem. Our specific examples showed that calculation errors of the parameter values were not more than the experimental errors.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.18212</doi>
          <udk>519.65, 53.088</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>inverse problem</keyword>
            <keyword>differential equation system</keyword>
            <keyword>indirect measurements</keyword>
            <keyword>Levenberg – Marquardt method</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.80.12/</furl>
          <file>12_132-143_18(2)2025.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>144-161</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0003-1457-8236</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Ipatov</surname>
              <initials>Andrey</initials>
              <email>andrei_ipatov@mail.ru</email>
              <address>Russia, 195251, St.Petersburg, Polytechnicheskaya, 29</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0009-0001-5775-2276</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Kupriianov</surname>
              <initials>Genrikh</initials>
              <email>henryweis3@gmail.com</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Collective excitations in the bulk doped semiconductor cadmium sulfide nanocrystals</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The excited states of nanosized CdS semiconductor crystals with bulk doping have been studied. It was demonstrated that the giant dipole resonance dominated in their photoabsorption spectra. Varying the potential barrier height at the nanoparticle boundary was shown to be able to cause a change in the character of the collective mode from the plasmonic-type electron density fluctuations to the dimensional quantization mode depending on the particle size and the number of free charge carriers.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.18213</doi>
          <udk>538.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>semiconductor nanocrystal</keyword>
            <keyword>cadmium sulfide</keyword>
            <keyword>doping</keyword>
            <keyword>plasmon resonance</keyword>
            <keyword>multiparticle excitation</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2025.80.13/</furl>
          <file>13_144-161_18(2)2025.pdf</file>
        </files>
      </article>
    </articles>
  </issue>
</journal>
