2304-9782, 2618-8686, 2405-7223 St. Petersburg Polytechnic University Journal: Physics and Mathematics 17 3.2 2024 1-373
CNF RUS 10-13 0000-0002-6919-5681 Osmanov Sebastyan 0000-0002-1233-0109 Mikhailova Tatiana Hybrid state of Fabry–Perot and Tamm plasmon-polariton modes in structures with different plasmon layers The paper presents the investigation of magnetophotonic crystals with different metal layers for the formation of a Tamm plasmon polariton. It was revealed that the structure with the Ag layer has the resonance with a higher optical  quality factor. It is shown how a change in the symmetry of the structure affects the properties of the hybrid state of Fabry–Perot and Tamm plasmon polariton modes. The effect of oblique incidence and polarization of incident light  on the localization of light in the layers of the structure is demonstrated. 10.18721/JPM.173.201 537.9 Tamm plasmon polariton magnetophotonic crystals magneto-optics https://physmath.spbstu.ru/article/2024.76.1/
CNF RUS 14-19 0000-0003-2498-1192 I.N. Ulyanov Chuvashia State University Lepaev Alexander
Cheboksary, Russian Federation
 0000-0002-9723-5652 I.N. Ulyanov Chuvashia State University Ksenofontov Sergey
Cheboksary, Russian Federation
 0000-0001-8432-5635 I.N. Ulyanov Chuvashia State University Vasilyeva Olga
Cheboksary, Russian Federation
 Chuvash State Pedagogical University named after I.Y. Yakovlev Tashkova Ksenia ksuha-92@inbox.ru
Cheboksary, Russian Federation
 Chemical activity of dispersed particles of potassium compounds in a pyrotechnic flame Modern developments of aerosol-generating compounds are associated with increased fire extinguishing efficiency and decreased temperature and chemical activity of twophase combustion product flow. When burning these  compounds in special generators, it is important to release particles as small as possible into the environment. The concentration of these particles must be commensurate with the concentration of active flame particles in the combustible material being extinguished. The structure of particles in pyrotechnic flames has been studied and the possibility of producing particles with reduced corrosion resistance has been demonstrated. A mechanism for the  interaction between reacting particles and potassium iodide crystals has also been proposed. 10.18721/JPM.173.202 536.46 flame dispersed particle potassium oxide potassium iodide https://physmath.spbstu.ru/article/2024.76.2/
CNF RUS 20-24 Voronezh State University of Engineering Technology Kim Kseniya kmkseniya@yandex.ru
Voronezh, Russian Federation
 0009-0005-4323-9163 Chernenko Sergey sergey.x173@mail.ru Voronezh State University of Engineering Technology Niftaliev Sabukhi sabukhi@gmail.com
Voronezh, Russian Federation
 Voronezh State University of Engineering Technology Kotov Gennady giktv@mail.ru
Voronezh, Russian Federation
 Voronezh State University Zolotukhin Dmitriy zolotuhin@phys.vsu.ru
Voronezh, Russian Federation
 Chukavin Andrey andrey_chukawin@mail.ru Voronezh State University of Engineering Technology Lenshin Alexander lenshinas@mail.ru
Voronezh, Russian Federation
 Deposition of tin and gold on porous silicon by vacuum thermal spraying In this work, a tin-gold layer was deposited on porous silicon (KEF 100) substrates by vacuum-thermal process (VUP) to improve the performance of sensors. By the method of X-ray photoelectron spectroscopy (XPS) we analyzed  the surface of the materials of the original porous silicon, as well as porous silicon with tin and gold, according to the method [1]). XPS overview spectra allow identifying elements present on the sample surface, as well as determining  their oxidation state and concentration. Using this information, valuable data on the surface composition can be obtained and the chemical structure of the sample can be analyzed. The results obtained showed that  using the vacuum-thermal method can be successfully applied to obtain nanocomposites of porous silicon with tin and gold. The obtained nanocomposites contain phases of tin dioxide, tin suboxide/monoxide and metallic tin.  Compared to tin, the gold film is formed in a smoother, more uniform manner. XPS spectra show that the gold is metallic, free of impurities and oxides. 10.18721/JPM.173.203 546.3-126:544.2 porous silicon composites tin gold thin films https://physmath.spbstu.ru/article/2024.76.3/
CNF RUS 25-30 Goroshko Dmitrii goroshko@iacp.dvo.ru 0000-0001-5386-1013 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Galkin Konstantin galkinkn@iacp.dvo.ru 0000-0002-8726-9832 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Chernev Igor igor_chernev7@mail.ru Maslov Andrei maslov@iacp.dvo.ru 0000-0003-4300-0070 Kropachev Oleg chernobez@gmail.com Subbotin Evgenii jons712@mail.ru 0009-0008-2152-140x Goroshko Olga olgagoroshko@iacp.dvo.ru 0000-0003-4127-2988 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Galkin Nikolay galkin@iacp.dvo.ru CoSi ultrathin films on Si(111) substrate: comparison of the stage formation in ultra-high vacuum and during annealing in argon As a result of the study, optimal conditions were identified for the formation of ultrathin films of cobalt monosilicide (CoSi) on a silicon substrate during a single annealing (T = 500–600 °C) of chromium layers (2–10 nm), both under ultra-high vacuum conditions and in an argon environment during isochronous annealing. The formation of the phase composition in ultrathin CoSi films is uniquely controlled in situ during growth in ultrahigh vacuum by the appearance of a bulk plasma frequency peak at 20.2–20.3 eV in the EELS spectrum, a Raman peak at 198 (204) cm-1 in ex situ Raman studies of the annealing in an argon environment (in vacuum) and characteristic of CoSi optical functions of refractive index and extinction and optical phonons at 223.7, 302.5 and 418.6 cm-1. It has been established that cobalt films not subjected to thermal annealing in a vacuum begin to oxidize when annealed in an argon  environment, which is convenient to monitor by the appearance of Raman peaks at 187 cm-1 and 670-677 cm-1. 10.18721/JPM.173.204 539.23+535.39+537.32+537.622 cobalt layer cobalt monosilicide ultrathin films isochronous annealing ultrahigh vacuum argon environment electronic structure phonon structure optical properties https://physmath.spbstu.ru/article/2024.76.4/
CNF RUS 31-35 Subbotin Evgenii jons712@mail.ru Kozlov Aleksei kozlov.ag@dvfu.ru Goroshko Dmitrii goroshko@iacp.dvo.ru 0000-0002-8726-9832 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Chernev Igor igor_chernev7@mail.ru 0009-0007-4827-2653 Khoroshilov Dmitry 0009-0007-5206-5753 Lisenkov Oleg 0000-0001-6878-679X Zhizhchenko Alexey 0000-0003-3377-1912 Kitan' Sergei 0000-0003-4127-2988 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Galkin Nikolay galkin@iacp.dvo.ru Mg2Si synthesis on silicon crystals with different aspect ratio In the paper synthesis of magnesium silicide (Mg2Si) features on silicon crystal with different aspect ratio were observed. These crystals were etched from monocrystalline borondoped silicon wafers with (100) orientation by metal-assisted chemical etching. The synthesis was occurred in ultra-high vacuum condition by a solid phase epitaxy and the modified reactive epitaxy with ultrafast Mg deposition. The substrate temperature range in both methods was  340–390 °C. As result co-axial core-shell Si/Mg2Si heterostructures with magnesium silicide thickness 500–1200 nm were produced. 10.18721/JPM.173.205 539.23+539.25+537.32+537.9 silicon magnesium silicide Mg2Si epitaxy metal-assisted chemical etching MACE Raman SEM https://physmath.spbstu.ru/article/2024.76.5/
CNF RUS 36-41 Kadinskaya Svetlana skadinskaya@bk.ru 0000-0002-3469-5897 Alferov University Kondratev Valeriy kvm_96@mail.ru
St. Petersburg, Russian Federation
 0009-0008-4344-4863 Alferov University Nikolaeva Aleksandra nikalex2000@bk.ru
St. Petersburg, Russian Federation
 St.Petersburg State University of Film and Television Akopyan Irina irina-akopyan@yandex.ru
St. Petersburg, Russian Federation
 St. Petersburg State University Serov Alexey a.serov@spbu.ru
St. Petersburg, Russian Federation
 St.Petersburg State University Labzovskaya Mariana
St. Petersburg, Russian Federation
 0000-0002-3705-9706 St.Petersburg State University of Film and Television Mikushev Sergey
St. Petersburg, Russian Federation
 St.Petersburg State University Novikov Boris bono1933@mail.ru
St. Petersburg, Russian Federation
 St. Petersburg State University Shtrom Igor i.shtrom@spbu.ru
St. Petersburg, Russian Federation
 0000-0001-7223-7232 Moscow Institute of Physics and Technology (National Research University) Bolshakov Alexey acr1235@mail.ru
Moscow, Russian Federation
 Random lasing in hydrothermal ZnO structures In this manuscript, we present a study on the optical properties of ZnO nanowires synthesized via hydrothermal method. The nanowires were characterized by low temperature photoluminescence spectroscopy, revealing resonant  modes indicative of random lasing behavior provided with scattering by misoriented nanowires. The spectral position of the resonant modes suggests lasing in the region of the P band of exciton-exciton interaction. Our results also indicate a correlation between the surface density of the nanostructures and peak intensity of the emission. Overall, our findings demonstrate the potential of hydrothermal synthesis for fabricating efficient light-emitting devices  based on ZnO. 10.18721/JPM.173.206 535.015 zinc oxide hydrothermal photoluminescence https://physmath.spbstu.ru/article/2024.76.6/
CNF RUS 42-45 Filippov Ivan ivn.filippov@gmail.com 0000-0002-0358-7818 Yakushova Nadezhda 0000-0001-8318-8149 Karmanov Andrey gubich.niifi@gmail.com Gubich Ivan 0000-0003-3037-3601 Pronin Igor Hierarchical self-assembly of SiO2-SnO2 nanoand microstructures in combined sol-gel systems Using the IR spectroscopy method, studies were carried out on the processes of hierarchical self-assembly of SiO2-SnO2 nano- and microstructures in combined sol-gel systems obtained by mixing film-forming sols with different  maturation times, which meets the goals and objectives of nanostructural engineering. Characteristic absorption peaks were identified that correspond to the process of hydrolytic polycondensation and carry information about the process of self-assembly in the analyzed systems. 10.18721/JPM.173.207 538.975 nanostructure engineering hierarchical self-assembly sol-gel technology spectroscopic investigation https://physmath.spbstu.ru/article/2024.76.7/
CNF RUS 46-51 Moscow Pedagogical State University Bondareva Polina p.bondareva2016@yandex.ru
Moscow, Russian Federation
 0000-0001-6494-0147 Moscow Pedagogical State University Shein Kirill
Moscow, Russian Federation
 Lyubchak Anastasia anlyubchak@miem.hse.ru 0009-0008-4349-7332 Moscow Pedagogical State University Izmaylov Ramil
Moscow, Russian Federation
 Baeva Elmira M. baeva.elm@gmail.com Goltsman Grigory goltsman@rplab.ru 0000-0003-2560-6503 National Research University “Higher School of Economics” Gayduchenko Igor igaiduchenko@hse.ru
Moscow, Russian Federation
 Johnson noise thermometry of CVD graphene bolometers Graphene, due to its record low electron heat capacity and weak electron-phonon coupling at low temperatures, is considered as a promising material for creating terahertz hot electron bolometers. The main challenge to the  development of such devices is the weak dependence of graphene resistance on temperature. Here we demonstrate measurement system based on Johnson noise thermometry to directly measure electron temperature in graphene. We measure thermal conductance due to electron-phonon coupling at bath temperature 4,2 K. Our graphene is synthesized by chemical vapor deposition (CVD) method and transferred to Si/SiO2 substrate. The electron–phonon  thermal conductance has a temperature power law of T4 which is typical for highly disordered graphene. We estimate the sensitivity of CVD graphene based bolometer with Johnson noise readout. The internal noise equivalent power  (NEP) is determined by thermodynamic fluctuations and is equal to 3 fW/Hz0.5. The sensitivity of the detector is limited by the read out noise and is equal to 267 pW/Hz0.5. Thе low internal NEP together with potential fast  response time makes CVD graphene to be promising material in the area of bolometry. 10.18721/JPM.173.208 538.9 graphene THz detectors bolometers noise thermometry https://physmath.spbstu.ru/article/2024.76.8/
CNF RUS 52-56 Lagutkina Aleksandra lagutkina.aa@phystech.edu Vizgalov Victor vizgalov.va@mipt.ru Development of solid-state composite cathode material for solid-state lithium-ion batteries based on lithium ferrophosphate LiFePO4 In the past few decades all-solid-state lithium-ion batteries have become a promising frontier due to their increased safety, higher energy density and unique mechanical properties. One of the main issues in this field is establishing  steady transport of lithium ions across the electrode–electrolyte interface, which requires modifications of the electrode structure. In this research we investigated mechanical properties, capacity and cycling performance of a composite cathode based on solid polymer electrolyte as a binder, lithium ferrophosphate as active material and carbon black as electron conductor. Composite cathode was prepared with the help of ball-milling to reduce the particle  size and increase the homogeneity of the material, which resulted in mechanically stable flexible crack-free electrodes after coating, drying and calendaring. Achieved specific capacity of the electrodes corresponds to  theoretical values, electrodes show long-term sustainability in systems with liquid electrolyte and are applicable to solid-state systems. 10.18721/JPM.173.209 621.3.035.221.14 all-solid-state lithium-ion battery composite electrodes lithium ferrophosphate electrodes solid electrolyte polymer electrolyte https://physmath.spbstu.ru/article/2024.76.9/
CNF RUS 57-61 0009-0003-5049-538X Alferov University Zavyalova Eseniya
St. Petersburg, Russian Federation
 0000-0001-7143-6686 Kusnetsov Alexey alkuznetsov1998@gmail.com 0000-0001-7223-7232 Moscow Institute of Physics and Technology (National Research University) Bolshakov Alexey acr1235@mail.ru
Moscow, Russian Federation
 Peculiarities of the local electromagnetic field distribution in non-van-der-Waals InGaS3 thin layers slot waveguides InGaS3 thin layers are promising nanostrures in the field of nanophotonics owing to the broad bandgap, sufficiently high refractive index and the simplicity of fabrication. Here we numerically investigate a system based on InGaS3  waveguides, standing side by side. We demonstrate the localization of the electromagnetic field inside the gap between two waveguides and obtain the refractive indices and losses for the slot waveguide modes at a wavelength of 505 nm. Transmittance spectra of considered configurations of different geometrical parameters were obtained The waveguiding cut-off related to the absorption inside the material and the delocalization of the electromagnetic field  was determined. The obtained results open the possibility for fabrication of novel photonic devices based on InGaS3 thin layers. 10.18721/JPM.173.210 538.9 InGaS3 slot waveguide transmittance thin layer numerical simulations https://physmath.spbstu.ru/article/2024.76.10/
CNF RUS 62-65 Nouraldeen Messan messannouraldeen@phystech.edu 0009-0001-6926-5205 Shestakov Nikita shestakov.nr@phystech.edu Moscow Institute of Physics and Technology (National Research University) Vershinina Olesya seraia.ov@phystech.edu
Dolgoprudny, Moscow region, Russian Federation
 Ivanov Victor ivanov.vv@mipt.ru Synthesis of aluminum nanoparticles using spark discharge for applications in ultraviolet plasmonics This work demonstrates synthesis Al metal nanoparticles with plasmon resonance in the ultraviolet region by the spark discharge method in an argon atmosphere. The resulting primary particles have an Al metal core and a natural  oxide shell and size in range from 5 to 50 nm. Importantly, these nanoparticle ensembles show wide extinction peaks, with the highest point between 250 and 480 nm wavelength. The position of the peak can be varied by synthesis  parameters. During our research, we employed laser radiation at a wavelength of 355 nm, with pulse energies reaching up to 350 μJ and pulse repetition rates of up to 2000 Hz. We observed that the sintering process of  nanoparticles exhibited a dynamic change in size, which correlated with the energy of the laser pulses. This dependence was illustrated by an S-shaped shrinkage curve. By subjecting the initial agglomerates to a series of impacting  laser pulses, we successfully achieved complete sintering, resulting in the transformation of the agglomerates into spherical nanoparticles. 10.18721/JPM.173.211 537.9 aluminum nanoparticles nanoparticles sintering laser sintering plasmon resonance https://physmath.spbstu.ru/article/2024.76.11/
CNF RUS 66-70 Kenesbay Ramazan ramazan.kenesbay.1999@gmail.com Toikka Andrei atoikka@obraz.pro Alferov University Baeva Maria maria.baeva111@gmail.com
St. Petersburg, Russian Federation
 0000-0001-9792-045X Peter the Great St. Petersburg Polytechnic University Mukhin Ivan muhin_is@spbstu.ru 0000-0003-4517-0807 Alferov University Mitin Dmitry mitindm@mail.ru
St. Petersburg, Russian Federation
 Suppressed phase segregation in CsPbIBr2 based PeLEC In this work we describe some strategies to suppress phase segregation in perovskite light-emitting electrochemical cells based on mixed halide CsPbIBr2 perovskite. Lead halide perovskites are widely used class materials used for  creating optoelectronic devices. However, appearing phase segregation causes peak separation on photo- and electro luminance spectra, which limit efficiency and color rendering of devices based on lead halide perovskite materials. Improving crystallinity of perovskite film by annealing temperature controlling can affect halide separation. Mn2+ doping was used to enhance materials stability of lead halide perovskite. Another strategy is crystal grains  passivation by polymers, i.e. polyethylene oxide and polyvinylidene fluoride, which reduce crystal defect density that cause phase segregation. All these strategies were applied in this work and demonstrate single peaks on photo-  and electro luminance spectra. Suggested solution of phase segregation problem allows to create more stable and effective CsPbIBr2 based perovskite light-emitting electrochemical cells that work in red range of visible spectrum  (620-680 nm). 10.18721/JPM.173.212 537.9 CsPbIBr2 perovskite PeLEC phase segregation mixed anion https://physmath.spbstu.ru/article/2024.76.12/
CNF RUS 71-77 0009-0001-3683-5558 ITMO University Papylev Denis dspapylev@itmo.ru
St. Petersburg, Russian Federation
 ITMO University Kolodeznyi Evgenii evgenii_kolodeznyi@itmo.ru
St. Petersburg, Russian Federation
 Babichev Andrei scientific.ocean@gmail.com. Peter the Great St. Petersburg Polytechnic University Kharin Nikita kharin.nikita66@gmail.com
St. Petersburg, Russian Federation
 Voznyuk Gleb gvvozniuk@itmo.ru Mitrofanov Maksim Mitrofanov@mail.ioffe.ru 0000-0003-4851-3641 Ioffe Institute Slipchenko Sergey serghpl@mail.ioffe.ru Lyutetskii Andrey Lutetskiy@mail.ioffe.ru Evtikhiev Vadim Evtikhiev@mail.ioffe.ru ITMO University Karachinsky Leonid lkarachinsky@itmo.ru
St. Petersburg, Russian Federation
 ITMO University Novikov Innokenty innokenty.novikov@itmo.ru
St. Petersburg, Russian Federation
 Peter the Great St. Petersburg Polytechnic University Panevin Vadim pvyu@rphf.spbstu.ru Ioffe Institute Pikhtin Nikita nike@hpld.ioffe.ru 0000-0002-0789-4241 Alferov University Egorov Anton anton.egorov@connector-optics.com
St. Petersburg, Russian Federation
 Temperature performance of ring quantum-cascade laser with staircase-like distributed feedback grating Direct ion-beam lithography was used to realize the staircase-like second order distributed feedback grating formed in the top cladding layers of ring quantum-cascade laser. As a result, the depth of grating slits was varied from 0.6  to 2.6 μm along the ring cavity. The whispering gallery modes lasing with near 1 kA/cm2 threshold current density at 77 K temperature was obtained with lasing wavelength close to 7.64 μm. Rise of the temperature up to 292 K yields  the multi-mode lasing near to 7.94 μm with moderate threshold current density ~4 kA/cm2. Time-resolved spectral characterization results are also discussed. 10.18721/JPM.173.213 538.9 molecular-beam epitaxy quantum-cascade laser indium phosphide ion-beam etching direct lithography ring cavity https://physmath.spbstu.ru/article/2024.76.13/
CNF RUS 78-83 Arsenov Pavel arsenov.pv@mipt.ru Pilyushenko Konstantin piliushenko.ks@mipt.ru Kazarinova Daria kazarinova.dd@mipt.ru Vlasov Ivan vlasov.is@mipt.ru Moscow Institute of Physics and Technology (National Research University) Volkov Ivan volkov.ia@mipt.ru
Dolgoprudny, Moscow region, Russian Federation
 Millifluidic polyol synthesis of Ag nanowires and microplotter printing of transparent conductive films Millifluidic polyol synthesis teflon tube (i.d. 1 mm) was studied and used to obtain silver nanowire dispersions. As a result of the experiments, the optimal concentrations of the reagents (silver nitrate AgNO3, ethylene glycol and  polyvinylpyrrolidone) were investigated and found to obtain homogeneous nanowires with high length-to-diameter ratios. As a result of the synthesis, Ag nanowires were obtained, which were used to form transparent conductive electrodes using microplotter printing. Transparent conductive electrodes with high transparency of more than 80% at a wavelength of 550 nm with a surface resistance of 52-229 Ohm/sq. 10.18721/JPM.173.214 538.9 polyol synthesis millifluidics silver nanowires microplotter printing transparent electrode https://physmath.spbstu.ru/article/2024.76.14/
CNF RUS 84-87 0000-0001-8440-494X Alferov University Novikova Kristina novikova_k@spbau.ru
St. Petersburg, Russian Federation
 0009-0000-3147-6974 Alferov University of RAS Funtikova Anastasiia 0000-0002-8661-4083 Alferov University Mozharov Alexey mozharov@spbau.ru
St. Petersburg, Russian Federation
 0000-0001-9792-045X Peter the Great St. Petersburg Polytechnic University Mukhin Ivan muhin_is@spbstu.ru Numerical investigation of influence GaP nanowire geometry to light extraction efficiency of red light-emitting diode Currently, micro-LEDs are promising optoelectronic devices. Numerical investigation was carried out to study the influence of the GaP nanowires geometric parameters on the light extraction efficiency to improve micro-LEDs  efficiency. The nanowires diameter has been shown to significantly alter the light extraction efficiency. The optimal nanowire diameter for a wavelength of 650 nm is close to 200 nm. 10.18721/JPM.173.215 538.975, 538.958 Red LEDs GaP NWs molecular beam epitaxy light extraction efficiency https://physmath.spbstu.ru/article/2024.76.15/
CNF RUS 88-92 Duplinsky Alexey a.duplinsky@goqrate.com 0000-0003-1511-1128 Khmelev Aleksandr a.khmelev@goqrate.com 0009-0006-5851-6175 Bakhshaliev Ruslan r.bakhshaliev@goqrate.com 0009-0000-8253-7263 Sevryukov Dmitriy d.sevryukov@goqrate.com 0009-0002-2294-3731 Barbyshev Konstantin k.barbyshev@goqrate.com 0000-0002-1599-9801 Kurochkin Vladimir v.kurochkin@rqc.ru Polarization extinction ratio conversion due to pointing system impact in satellite quantum key distribution Quantum key distribution via satellites enables the technology to be applied at transcontinental scale; nevertheless, in contrast to fiber systems, using a free-space optical communication channel presents certain extra technological  obstacles. The contribution of the acquisition, pointing and tracking system’s operation to the potential quantum bit error value is investigated in this research. The polarization extinction ratio measurements varying with the pointing  mirror angular position are reported, based on these data, the upper limit of the quantum bit error is predicted for several types of satellite passages. 10.18721/JPM.173.216 29.31.00 quantum key distribution polarimetry polarization extinction ratio free-space optics https://physmath.spbstu.ru/article/2024.76.16/
CNF RUS 93-97 0000-0002-8726-0416 Dashkov Alexander 0009-0006-9763-2830 Kostromin Nikita Alferov University Barykin Dmitrii d.a.barykin02@mail.ru Goray Leonid lig@pcgrate.ru Optimization of mid-infrared quantum cascade detectors In this work, the optimization of the design of quantum cascade detectors is considered. The initial design studied was a detector structure based on an AlGaAs/GaAs heteropair, consisting of four quantum wells. A genetic algorithm  was utilized to optimize the responsivity and detectivity of the design under study by varying of the widths and chemical composition of the first five layers of the cascade. The responsivity and detectivity were simplified to the  characteristics, that can be evaluated based on the solutions of the Schrödinger and Boltzmann equations. The results demonstrate a strong dependence on the optimization algorithm parameters and designate significant change  from the initial design. We have shown that to achieve optimal output characteristics and improve the convergence rate, one must use larger populations and high mutation probability in the genetic algorithm. The analysis of the obtained designs also shows that additional regularization techniques are required to achieve better output characteristics of the device. Specifically, the appropriate weighting of the set of optimized characteristics must be  determined before final optimization. 10.18721/JPM.173.217 538.915, 519.688 quantum cascade detector optimization numerical simulations Schrodinger equation https://physmath.spbstu.ru/article/2024.76.17/
CNF RUS 98-102 0009-0006-9763-2830 Kostromin Nikita 0000-0002-8726-0416 Dashkov Alexander Alferov University Barykin Dmitrii d.a.barykin02@mail.ru Numerical optimization of semiconductor waveguide structure Research on radiation sources in the IR and THz ranges operating at room temperature is still highly attractive to this day. Waveguides play a critical role in these structures and their improvement is also required. This paper studies  the optimization of waveguides based on GaAs material with different doping levels of layers to reduce absorption losses and increase the optical confinement factor. The optimization is carried out in three steps: selection of  optimization parameters, determination of initial values of parameters and Bayesian optimization. The thickness and doping level of heavily doped layers are chosen as optimization parameters. The results show the Bayesian  algorithm converges to the desired values rather quickly. It was found that the dependence of the waveguide output characteristics on concentration is weaker than on layer thickness. An increase in layer thickness leads to an increase in losses. Weak asymmetry in the structure can lead to a slight improvement in the confinement factor value. 10.18721/JPM.173.218 537.87, 519.688 quantum cascade laser waveguide gallium arsenide optimization Bayesian optimization https://physmath.spbstu.ru/article/2024.76.18/
CNF RUS 103-106 Institute of Automation and Control Processes FEB RAS Balagan Semyon simak_64@mail.ru
Vladivostok, Russian Federation
 0000-0003-2170-7972 Shevlyagin Alexander shevlyagin@iacp.dvo.ru The quest for direct band beta iron disilicide: collaboration of theoretical and experimental approaches In the presented work, a theoretical study of the effect of β-FeSi2 lattice deformation on the type and magnitude of the first transition in the electronic band structure was carried out. Images of nanocrystallites obtained using high-resolution transmission electron microscopy were used as a source of deformation data. All in all, 137 variants of β-FeSi2 lattice deformation were considered in the work. Six types of first transitions different from the first transition in unstrained β-FeSi2 were discovered. The values of the first transitions from 0.02 to 0.64 eV (direct) and from 0.01 to 1.12 eV (indirect) were obtained. 10.18721/JPM.173.219 535-15+539.21+539.25 silicon beta Fe disilicide ab initio calculation https://physmath.spbstu.ru/article/2024.76.19/
CNF RUS 107-111 Institute of Automation and Control Processes FEB RAS Balagan Semyon simak_64@mail.ru
Vladivostok, Russian Federation
 0000-0003-4127-2988 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Galkin Nikolay galkin@iacp.dvo.ru Effect of diameter on lattice thermal conductivity of α-FeSi2 and ε-FeSi nanowires In this study the effect of α-FeSi2 and ε-FeSi nanowires diameter on the lattice thermal conductivity was considered. Ab initio modeling was performed in the temperature range of 100–700 °K and nanowires diameter range of 6–48  nm. Results showed that at minimal considered diameter nanowires have 1.4–4.5 times lower lattice thermal conductivity than bulk material depending on temperature and nanowire elongate direction. 10.18721/JPM.173.220 536.2+537.32+539.21 silicon Fe silicides nanowires ab initio calculation thermal conductivity https://physmath.spbstu.ru/article/2024.76.20/
CNF RUS 112-115 Babukhin Danila dv.babukhin@gmail.com Sych Denis denis.sych@gmail.com Efficiency analysis of generative adversarial networks for single pixel imaging The single-pixel camera provides a prospective tool for imaging beyond conventional pixel-matrix-based devices. In recent years, neural networks have become a part of singlepixel imaging as a method to restore an image from  intensity measurements computationally. Generative adversarial networks (GANs) are particularly well suited for this task. In this paper, we investigate the performance of a generative adversarial least squares network in the task of image reconstruction from a single-pixel camera at low sampling rates. We demonstrate that stable successful image reconstruction is possible at sampling rates around 8%, and that the reconstructed images should match the  structure of the images present in the training sample. 10.18721/JPM.173.221 53 single pixel imaging neural networks image restoration https://physmath.spbstu.ru/article/2024.76.21/
CNF RUS 116-120 Lyubchak Anastasia anlyubchak@miem.hse.ru 0000-0001-6494-0147 Moscow Pedagogical State University Shein Kirill
Moscow, Russian Federation
 Goltsman Grigory goltsman@rplab.ru 0000-0003-2560-6503 National Research University “Higher School of Economics” Gayduchenko Igor igaiduchenko@hse.ru
Moscow, Russian Federation
 Waveguide-integrated graphene terahertz detector Terahertz (THz) integrated circuits is a promising platform to create low cost and efficient components for high-speed sixth-generation (6G) communication networks. One of the key components for this application is detectors and  mixers integrated on THz silicon waveguide. Graphene, due to its unique and tunable properties such as zero band gap, high charge mobility and low electronic heat capacity, has already demonstrated promise in free space THz  detectors, mixers and modulators development. Moreover, graphene photodetectors integrated on the waveguide have already been demonstrated in visible and near infrared regions. In this work we present an electromagnetic  model of graphene terahertz detector integrated on silicon waveguide. Graphene THz detector was designed for operation at 150 GHz and can be used in the nextgeneration wireless communications for an ultrafast on-chip THz  signal processing. 10.18721/JPM.173.222 535.93 terahertz dielectric waveguide photonic-integrated circuit dielectric effectivemedium waveguide https://physmath.spbstu.ru/article/2024.76.22/
CNF RUS 121-124 0000-0001-7989-6513 Malokhatko Sofya malohatko@sfedu.ru 0000-0001-8635-2573 Gusev Evgeny eyugusev@sfedu.ru Jiang Liyuan jiangliyuan@sdlaser.cn Southern Federal University Ageev Oleg ageev@sfedu.ru
Taganrog, Russian Federation
 Effect of internal mechanical stresses in a multilayer structure on displacement for various designs of microelectromechanical membranes In the manufacture of microelectromechanical sensors based on multilayer membranes, internal mechanical stresses arise in the structure. A preliminary assessment of the effect of internal mechanical stresses on the initial  displacement of structures of various shapes will allow to choose the most appropriate design solution for various applications. The paper presents the results of numerical modeling of the structures of multilayer membranes of three types: round, square and square with transverse and angular beams. The displacement values for each type of multilayer membranes are obtained in accordance with the influence of internal mechanical stresses in each layer. The  results showed that the effect of internal mechanical stresses in films (SiO2, Mo, ZnO) of a multilayer structure on square and round membranes is insignificant (values ranged from 2.43·10–13 to 7.83·10–13 nm). Internal mechanical  stresses in membrane layers with transverse and angular beams make a significant contribution to the initial displacement of the structure (values ranged from 20 to 570 nm), however, the sensitivity of such structures is  higher than that of rigid structures. The influence of technological conditions of film formation in multilayer membranes on their stress-strain state in ultrasonic sensors is investigated. The values of internal mechanical stresses in  SiO2 films are obtained. 10.18721/JPM.173.223 51-74 microelectromechanical sensors multilayer membrane internal mechanical stress https://physmath.spbstu.ru/article/2024.76.23/
CNF RUS 125-129 0009-0004-6560-7409 Tabieva Arina tabieva.arina@itmo.ru 0000-0002-5109-2086 Trifanov Alexander alextrifanov@itmo.ru 0000-0002-6482-0951 Tushavin Gleb tushavin@itmo.ru 0009-0006-8671-1752 Matveeva Milena mvmatveeva@itmo.ru Modeling the dynamics and properties of the squeezed state of light in a phase modulator In this work, we investigate the transformation of a squeezed by photon-number quantum state of a single-mode optical signal during phase modulation process. Within the framework of the semiclassical model of the phase  modulator, we obtained estimations for the statistical properties of individual modes and mode sub-ensembles of the signal spectrum. We shown that for the case of modulation of squeezed vacuum, the entire spectrum of the  modulated signal evaluates to the entangled state of a number of frequency modes. The results obtained in this work enable the use of squeezed modulated light states in quantum key distribution systems and various interferometric applications. 10.18721/JPM.173.224 535.14 phase modulator multimode quantum optical signal SU(1.1) algebra squeezed state of light https://physmath.spbstu.ru/article/2024.76.24/
CNF RUS 130-134 0009-0006-8671-1752 Matveeva Milena mvmatveeva@itmo.ru 0000-0002-5109-2086 Trifanov Alexander alextrifanov@itmo.ru 0000-0002-6482-0951 Tushavin Gleb tushavin@itmo.ru 0009-0004-6560-7409 Tabieva Arina tabieva.arina@itmo.ru Investigation of entangled states of a three-mode electro-optical modulator We study the dynamic properties and algebraic invariants of the model of phase modulation of quantum light by microwave radiation. The quasi-energy levels of the system are described by the eigenvalues of the effective  Hamiltonian, which generators obbey to su(2) algebra and have a nontrivial internal structure. The dynamics of states is studied in Fock space. Invariant Hamiltonian spaces are associated with irreducible representations of the su(2) algebra, within which the Hamiltonian matrix is partitioned into finite blocks. Within this model we investigate the generating process of two-mode entangled states using the single-tone Fock state at the input of phase modulator. 10.18721/JPM.173.225 517.986.5 phase modulator Hamiltonian entangled states ladder operators https://physmath.spbstu.ru/article/2024.76.25/
CNF RUS 135-138 Federal State Budgetary Institution of Science K.A. Valiev Institute of Physics and Technology of the RAS Yaroslavl Branch Grushevsky Egor yaregor@mail.ru
Yaroslavl, Russian Federation
 Federal State Budgetary Institution of Science K.A. Valiev Institute of Physics and Technology of the RAS Yaroslavl Branch Savinsky Nikolay savinski1@yandex.ru
Yaroslavl, Russian Federation
 Trushin Oleg otrushin@gmail.com The method of obtaining Ni and Co nanowires in porous anodic alumina matrices This paper focuses on the investigation of producing Ni and Co nanowire arrays synthesized using Al2O3 porous template. Porous alumina samples were obtained by double electrochemical anodizing of the prepared foil in 0.5 M  oxalic acid, at a voltage of 60 V and a temperature of 25 °C. The pore diameter distribution maximums are about 85 nm. Nanowires were electrodeposited in a 3-electrode electrochemical cell into prepared matrices in a potentiostatic and galvanostatic mode. Studies of the surface of porous membranes and the geometry of nanowires were carried out using scanning electron microscope. 10.18721/JPM.173.226 539.232; 542.06; 546–1; 544.654.2 anodization aluminum oxide matrices nanowires electrochemical deposition https://physmath.spbstu.ru/article/2024.76.26/
CNF RUS 139-142 National Research Tomsk State University Kukenov Olzhas okukenov@mail.ru
Tomsk, Russian Federation
 0009-0008-8052-3253 National Research Tomsk State University Dirko Vladimir
Tomsk, Russian Federation
 0000-0002-4029-8353 National Research Tomsk State University Lozovoy Kirill
Tomsk, Russian Federation
 National Research Tomsk State University Kokhanenko Andrey kokh@mail.tsu.ru
Tomsk, Russian Federation
 0000-0002-1196-6199 Voitsekhovskii Alexander 0009-0000-9839-894X Maier Xeniya Study of the formation mechanisms of Ge terraces on Si(100) during MBE using the RHEED method In the work, a comparison of the widths of Ge and Si terraces on Si(100) at temperatures in the range from 200 °C to 800 °C was made using diffraction patterns in the [100] direction. The temperatures at which the growth  mechanisms for the formation of monoatomic steps of Ge on Si(100) change have been established. 10.18721/JPM.173.227 539.27, 539.234 molecular beam epitaxy reflection high-energy electron diffraction step-flow growth heteroepitaxy https://physmath.spbstu.ru/article/2024.76.27/
CNF RUS 143-147 Gridchin Vladislav gridchinvo@gmail.com 0000-0002-4110-1647 Shugabaev Talgat talgashugabaev@mail.ru Lendyashova Vera erilerican@gmail.com Kotlyar Konstantin konstantin21kt@gmail.com St. Petersburg State University Khrebtov Artem khrebtovart@mail.ru
St. Petersburg, Russian Federation
 Dragunova Anna anndra@list.ru Kryzhanovskaya Natalia V. Natalia nkryzhanovskaya@hse.ru Reznik Rodion moment92@mail.ru Cirlin George george.cirlin@mail.ru Growth of long core-shell InGaN nanowires by plasma-assisted molecular beam epitaxy with gradually increasing substrate temperature This work presents the results of a study on the morphological and optical properties of InGaN nanowires grown using two different substrate temperature regimes. It is obtained that a gradual increase in the substrate temperature  during the growth process makes it possible to obtain long morphologically homogeneous nanowires with a core-shell structure. The photoluminescence of nanowires is in the green range and is three times higher than that of similar  structures grown in a stationary temperature regime. 10.18721/JPM.173.228 538.975 InGaN nanowires core-shell MBE photoluminescence gradually increasing substrate temperature https://physmath.spbstu.ru/article/2024.76.28/
CNF RUS 148-151 0000-0002-3779-8242 Starnikova Alexandra starnikova@sfedu.ru 0000-0003-3725-6053 Petrov Viktor vvpetrov@sfedu.ru Electrical properties of ZnO/Au and ZnO/SnO2 nanorod arrays when exposed to UV irradiation with controlled intensity Arrays of zinc oxide (ZnO) nanorods were synthesized on quartz substrates by the hydrothermal method. The nanorods were grown mainly in a vertical orientation, had a length of 500–800 nm and an average cross-sectional size of  40–80 nm. Gold nanoclusters with average sizes of 9 ± 1 nm and 4 ± 0.5 nm and tin with average sizes of 30 ± 5 nm and 15 ± 3 nm were formed on top of the ZnO nanorods. Annealing was carried out at 300 °C for 2 hours with the  formation of arrays of ZnO/SnO2 nanorods. For the manufacture of resistive sensor elements, V/Ni contact metallization was applied on top of the samples. The study of the electrophysical characteristics of the ZnO/Au and ZnO/ SnO2 nanorods arrays showed that exposure to UV radiation of different intensity leads to a change in the electrical resistance of the sensor structure, and also affects the time of establishing the readings of the obtained samples. 10.18721/JPM.173.229 504.064.3 ZnO nanorods electrophysical properties ultraviolet irradiation https://physmath.spbstu.ru/article/2024.76.29/
CNF RUS 152-156 0000-0002-3503-7458 St. Petersburg Electrotechnical University "LETI" Maksimova Alina A. deer.blackgreen@yandex.ru 0000-0002-0061-6687 Alferov University Uvarov Alexander lumenlight@mail.ru 0000-0001-6869-1213 Alferov University Vyacheslavova Ekaterina cate.viacheslavova@yandex.ru 0000-0002-4894-6503 Alferov University Baranov Artem I. baranov_art@spbau.ru
St. Petersburg, Russian Federation
 0009-0005-9558-4583 Yarchuk Ernst 0000-0002-7632-3194 Alferov University Gudovskikh Alexander gudovskikh@spbau.ru Influence of in-situ plasma treatment during PE-ALD of GaN on growth rate and morphology In this work, the plasma-enhanced atomic layer deposition (PE-ALD) technique, including continuous hydrogen plasma, was studied for GaN growth. Also, the use of plasma at the nitrogen step only as well as argon plasma surface  activation were explored. The structural properties of GaN layers grown on Si substrates at different conditions were studied by atomic force microscopy (AFM). It was shown that in-situ Ar plasma treatment during the PE-ALD process of GaN growth leads to improvement of the surface roughness as well as an increase in growth rate. On the contrary, the use of hydrogen plasma during the process leads to a drastic increase in surface roughness due to  parasitic deposition. 10.18721/JPM.173.230 621.315.592 gallium nitride plasma treatment atomic layer deposition https://physmath.spbstu.ru/article/2024.76.30/
CNF RUS 157-160 0009-0009-4548-3724 Agafonov Dmitriy 0000-0001-9319-2475 Research Institute of Electronic and Mechanical Devices Novichkov Maksim
Penza, Russian Federation
 Shepeleva Anastasia eduard.shepelev.67@mail.ru 0000-0001-9602-7221 Research Institute of Electronic and Mechanical Devices Gurin Sergey
Penza, Russian Federation
 0009-0006-3140-5897 Research Institute of Electronic and Mechanical Devices Ryzhov Alexandr
Penza, Russian Federation
 Moscow Institute of Physics and Technology (MIPT) Volkov Valentyn vsv.mipt@gmail.com
Moscow, Russian Federation
 Sensor of fast-variable and static pressure A new design and technological solution has been developed for the sensing element of a static and rapid-change pressure sensor based on the integration of strain-resistant and piezoelectric films of nanometer size, which made it  possible to create a multifunctional sensor element with small pressure deviations from the actual values. 10.18721/JPM.173.231 544.478-03 sensing element pressure sensor strain gauge piezoelectric thin films static pressure dynamic pressure https://physmath.spbstu.ru/article/2024.76.31/
CNF RUS 161-165 Frolov Ilya ilya-frolov88@mail.ru Radaev Oleg oleg.radaev.91@mail.ru 0000-0003-4854-2813 Sergeev Viacheslav sva@ulstu.ru Threshold current of separate spectral components of the emission spectrum of InGaN LEDs The results of measurements of the threshold current of ultraviolet, blue and green InGaN LEDs on different spectral components of the full emission spectrum are presented. It is shown that the threshold current of long-wave  components of the spectrum is greater than the threshold current of short-wave components. The relative difference in the values of the threshold current of the spectral components of the short-wave and long-wave wings of the emission spectrum at the level of half the radiation power is associated with the inhomogeneous distribution of indium concentration in the quantum well of the InGaN/GaN heterostructure and for the studied ultraviolet LEDs is 2.8%,  4.4% for blue, 25.7% for green. 10.18721/JPM.173.232 621.382.088 LED InGaN/GaN heterostructure emission spectrum threshold current measurement https://physmath.spbstu.ru/article/2024.76.32/
CNF RUS 166-172 Peter the Great St. Petersburg Polytechnic University Provodin Daniil provodindanya@gmail.com
St. Petersburg, Russian Federation
 Yakusheva Maria yakusheva.ma@edu.spbstu.ru Davydov Vadim davydov_vadim66@mail.ru A new method of managing the discretization of the scale in a mobile differential refractometer The necessity of developing a new method for managing the discretization of the scale in a mobile differential refractometer has been justified. The implementation of this method is necessary to expand the functional capabilities of  the developed mobile differential refractometer (providing a measurement mode of the refractive index of a liquid medium ranging from 1.23 to 2.63 with an error of 0.0001). All existing liquid media and their mixtures worldwide fall  within this measurement range. When using other models of compact and mobile refractometers for express control, such a measurement range of n cannot be provided. Within the range of change of n from 1.23 to 2.63, a new  management method has been implemented, which ensured a measurement error of 0.0001. Studies of various media have been conducted, confirming the adequacy of our development. 10.18721/JPM.173.233 535,015 refraction liquid refractive index Anderson cuvette laser radiation photodiode array measurement error https://physmath.spbstu.ru/article/2024.76.33/
CNF RUS 173-176 0009-0001-8930-5438 Lavrinenko Valeriy Lavrinenko_valerav@inbox.ru Vasilieva Anastasia anastasiastru@mail.ru Parfenov Vadim vadim_parfenov@mail.ru 0009-0003-0155-4208 Novikov Ivan ianovikov@stud.etu.ru Investigation of microfluidic topology formation with the use of IR pulse laser The work considers the possibility of creating microfluidic topology elements on a stainless-steel plate using laser processing. The results of multi-stage exposure of near IR laser radiation to a metal surface in order to create  microchannel parts (grooves) with a semicircular profile, as well as through holes that form part of typical microfluidic topologies, are presented. This paper describes the main technological features of the effect of laser radiation on  a metal plate, which affect the effectiveness of creating microtopology elements. 10.18721/JPM.173.234 53.06 microfluidics microfluidic topology laser processing laser perforation https://physmath.spbstu.ru/article/2024.76.34/
CNF RUS 177-181 Ivanov Anton a-e-ivano-v@yandex.ru Submicron Heterostructures for Microelectronics Research and Engineering Center of the RAS Chernyakov Anton chernyakov.anton@yandex.ru
Russia, 194021, St.Petersburg, Polytechnicheskaya, 26
 Talnishnikh N.A. Nadya.FEL@mail.ru 0000-0003-4457-8149 Ioffe Institute Shabunina Evgeniia
St. Petersburg, Russian Federation
 Shmidt Natalia Competing processes in nitride alloys in MQWs of LEDs The nature of competing processes leading to narrowing and broadening of the electroluminescence spectra width at half maximum under the injection current in nitride LEDs emitting at wavelengths of 270–280 nm and 530–540 nm  has been studied. It was found out that there may be local regions with disturbed stoichiometry of random alloy fluctuations, enriched in excited defects (“deep center + local vibrations”) in nitride MQWs with random alloy fluctuations.  The capture of injected charge carriers by such defects in MQWs located in the space charge region of the pn junction was shown to lead to their coordination rearrangement in the lattice. This also results in a more equilibrium state  of random alloy fluctuations and is accompanied by a narrowing of the full width at half maximum electroluminescence spectrum. However, this mechanism is a source of carrier loss that reduces the external quantum efficiency of  LEDs at the maximum. It was shown experimentally that the higher the level of disorder in random alloy fluctuations, the lower the external quantum efficiency values. The nonequilibrium filling of the lateral random allow fluctuation by  charge carriers in MQWs located outside the space charge region causes the broadening of the full width at half maximum electroluminescence spectrum in LEDs. This mechanism leads to a drop in external quantum efficiency at current densities j > 30 A/cm2. 10.18721/JPM.173.235 628.9.038 MQW LEDs alloy level disorder FWHM random alloy fluctuation https://physmath.spbstu.ru/article/2024.76.35/
CNF RUS 182-186 0000-0002-4894-6503 Barantsev Oleg ovbarantsev@gmail.com Alferov University Vasilkova Elena elenvasilkov@gmail.com
St. Petersburg, Russian Federation
 Alferov University Pirogov Evgeny zzzavr@gmail.com
St. Petersburg, Russian Federation
 0000-0003-1835-1629 Alferov University Shubina Kseniia rein.raus.2010@gmail.com
St. Petersburg, Russian Federation
 0000-0002-4894-6503 Alferov University Baranov Artem I. baranov_art@spbau.ru
St. Petersburg, Russian Federation
 JSC OKB-Planeta Voropaev Kirill kirill.voropaev@novsu.ru
V. Novgorod, Russian Federation
 0009-0009-2615-6795 Vasil’ev Andrey ITMO University Karachinsky Leonid lkarachinsky@itmo.ru
St. Petersburg, Russian Federation
 ITMO University Novikov Innokenty innokenty.novikov@itmo.ru
St. Petersburg, Russian Federation
 0000-0001-8629-2064 Alferov University Sobolev Maxim
St. Petersburg, Russian Federation
 Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties In0.83Ga0.17As/InP PIN-photodiode heterostructures with different doping levels have been grown by molecular beam epitaxy. Metamorphic buffer layers were applied to prevent misfit dislocations nucleation in active layers.  Capacitance-voltage and current-voltage curves of fabricated photodiodes have been measured and analysed. The impact of various dark current mechanisms has been estimated after the measurements of current-voltage curves  at different temperatures. 10.18721/JPM.173.236 621.383.525 metamorphic buffer layers infrared photodetectors molecular beam epitaxy https://physmath.spbstu.ru/article/2024.76.36/
CNF RUS 187-191 Saratov State University Kozlowski Alexander kozlowsky@bk.ru
Saratov, Russian Federation
 0000-0001-6780-9865 Volkovoynova Larisa 0000-0003-3281-8352 Saratov State University Serdobintsev Alexey alexas80@bk.ru
Saratov, Russian Federation
 Electrical characteristics of semiconductor film structures obtained on a flexible substrate In the frame of this work the current-voltage characteristics of thin films of polycrystalline silicon on a flexible polymer substrate were studied, measured when the film was bent in both tension and compression modes. The samples  were fabricated by laser-stimulated metal-induced crystallization of amorphous Si films, deposited by magnetron sputtering on a flexible polyimide film both in constant power and pulsed mode. It has been established that the resistance of a polycrystalline Si film depends on the degree and type of deformation. The change in electrical resistance can be associated with an increase and decrease in the intergranular distance when the film is stretched and  compressed, respectively. The resulting films are promising for the fabrication of semiconductor strain sensors and active elements of flexible electronics. 10.18721/JPM.173.237 539.23 сrystallization of amorphous silicon metal-induced crystallization laserstimulated crystallization infrared laser radiation flexible electronics https://physmath.spbstu.ru/article/2024.76.37/
CNF RUS 192-195 0009-0009-7765-2609 Gribovskaya Olga fen.tefal2@gmail.com Sharkova Natalia nasharkova@stud.etu.ru Vasilieva Anastasia anastasiastru@mail.ru Parfenov Vadim vadim_parfenov@mail.ru The use of Raman and laser-induced breakdown spectroscopy for the study of iron-containing inks The paper presents experimental results of combined use of Raman and laserinduced breakdown spectroscopy (LIBS) for determining elemental composition of ironcontaining inks. It was shown that proposed approach allows to  solve the problem of ironcontaining components identification for paper artifacts. 10.18721/JPM.173.238 621.373.826 iron gall ink Raman spectroscopy laser-induced breakdown spectroscopy LIBS chemical composition analysis https://physmath.spbstu.ru/article/2024.76.38/
CNF RUS 196-200 Novosyolov Artyom sir.nowosiolov@yandex.ru Sanatulina Arina sanatulina.af@phystech.edu Moscow Institute of Physics and Technology (National Research University) Vershinina Olesya seraia.ov@phystech.edu
Dolgoprudny, Moscow region, Russian Federation
 Moscow Institute of Physics and Technology (National Research University) Lizunova Anna anna.lizunova@gmail.com
Dolgoprudny, Moscow region, Russian Federation
 0000-0002-3028-947X Gudkova Svetlana Moscow Institute of Physics and Technology (National Research University) Urazov Maxim urazov.mn@mipt.ru
Dolgoprudny, Moscow region, Russian Federation
 Сomposition of Al/Zn nanoparticles produced in a gas discharge In this work, we investigated the size and elemental composition of a binary of aluminum/zinc nanoparticles synthesized in a gas discharge generator. AlxZn1–x nanoparticles were produced in inert atmosphere by simultaneous  erosion of aluminum hole cathode and a zinc anode. Mass fractions of aluminum x were varied from 0.05 to 0.29 by changing the surface area of the aluminum electrode. It was found that the mass fraction of aluminum in binary composition increased 2.6 times when erosion surface of the Al cathode dropped from 188.5 to 37.7 mm2. The average sizes of primary nanoparticles were in the range from 12.8 to 18.6 nm, which formed submicron agglomerates.  Also, when the erosion process occurred in an air atmosphere, we produced zinc aluminate AlZn2O4 with luminescence in ultraviolet (UV) range. 10.18721/JPM.173.239 544.032 nanoparticles zinc aluminate size measurement gas discharge TEM erosion https://physmath.spbstu.ru/article/2024.76.39/
CNF RUS 201-206 0000-0002-8102-3858 Baranov Pavel psbaranov@etu.ru Parfenov Vadim vadim_parfenov@mail.ru Rongonen Sofia sofiagonobobleva@mail.ru Sokolov Nikita niksokolov2001@mail.ru Identification of unreadable marginalia by means of hyperspectral imaging: case study of the Ostrog Bible from the Library of Russian Academy of Sciences and Russian National Library Experiments on visualization of unreadable manuscript marginalia (fading of ink, spreading of ink, crossed out ink, scraping of ink, gluing with restoration materials) of several copies of the Ostrog Bibles from the National Library of  Russia and the Library of Russian Academy of Sciences using hyperspectral imaging have been conducted. The aim of work was to find a way using advanced opto-electronic techniques to read invisible marginalia. In experiments  NIR hyperspectral camera operating in the range 400–1100 nm and original self-developed software were used. Marginalia have been visualized by means of hyperspectral imaging that made possible to recognize badly visible texts  and bring new information for art historians. 10.18721/JPM.173.240 621. 397 hyperspectral imaging unreadable marginalia Ostrog bible manuscript cultural heritage opto-electronic techniques https://physmath.spbstu.ru/article/2024.76.40/
CNF RUS 207-211 0000-0002-6247-9868 Mastalieva Viktoriia strindberg76@mail.ru Alferov University Neplokh Vladimir vneplox@gmail.com
St. Petersburg, Russian Federation
 Aybush Arseny aiboosh@gmail.com Stovpiaga Ekaterina kattrof@gvg.ioffe.ru Eurov Daniil edan@mail.ru Peter the Great St. Petersburg Polytechnic University Vinnichenko Maxim mvin@spbstu.ru Peter the Great St. Petersburg Polytechnic University Karaulov Danila karaulov.da@edu.spbstu.ru
St. Petersburg, Russian Federation
 0000-0002-1571-209X ITMO University Kirilenko Demid demid.kirilenko@mail.ioffe.ru
St. Petersburg, Russian Federation
 0000-0003-2956-6561 Golubev Valery golubev@gvg.ioffe.ru Ioffe Institute Smirnov Alexander Alex.Smirnov@mail.ioffe.ru
St. Petersburg, Russian Federation
 0000-0002-9257-6183 Makarov Sergey s.makarov@metalab.ifmo.ru Ioffe Institute Kurdyukov Dmitry kurd@gvg.ioffe.ru
St. Petersburg, Russian Federation
 0000-0001-9792-045X Peter the Great St. Petersburg Polytechnic University Mukhin Ivan muhin_is@spbstu.ru Nonlinear optical phenomena in mesoporous SiO2 and Si/SiO2 nanoparticles In this work we study the optical response of mesoporous SiO2 and Si/SiO2 nanoparticles considering different fabrication and post-synthesis treatment processes. We show that thermal annealing of mesoporous Si/SiO2  nanoparticles transforms the Si phase from amorphous to crystalline and enhances the second harmonic generation response. 10.18721/JPM.173.241 548.75 second harmonic generation silicon nanostructures mesoporous nanoparticles IR visualizer https://physmath.spbstu.ru/article/2024.76.41/
CNF RUS 212-216 Melnichenko Ivan imelnichenko@hse.ru 0000-0003-3686-935X National Research University “Higher School of Economics” (St. Petersburg branch) Moiseev Eduard emoiseev@hse.ru Ivanov Konstantin kivanov@hse.ru Kryzhanovskaya Natalia V. Natalia nkryzhanovskaya@hse.ru Vainilovich Alexey a.vainilovich@ifanbel.bas-net.by Nahorny Aliaksey a.nahorny@ifanbel.bas-net.by Lutsenko Eugeniy e.lutsenko@ifanbel.bas-net.by 35379962200 Ioffe Physical Technical Institute of the Russian Academy of Sciences Zhukov Alexey zhukov@beam.ioffe.ru
Russia, 194021, St.Petersburg, Polytechnicheskaya 26
 Mode leakage into substrate in microdisk lasers The propagation of whispering gallery modes of a quantum-dot injection disk laser into a GaAs substrate has been investigated experimentally and using simulation. For a 50 μm diameter microlaser with 1.5-μm-thick Al0.4Ga0.6As  claddings, the intensity of the mode leaking into the substrate can be up to 10–3 of the intensity of the laser mode in the waveguide.