<?xml version="1.0" encoding="utf-8"?>
<journal>
  <titleid/>
  <issn>2304-9782, 2618-8686, 2405-7223</issn>
  <journalInfo lang="ENG">
    <title>St. Petersburg Polytechnic University Journal: Physics and Mathematics</title>
  </journalInfo>
  <issue>
    <volume>17</volume>
    <number>3.2</number>
    <altNumber> </altNumber>
    <dateUni>2024</dateUni>
    <pages>1-373</pages>
    <articles>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>10-13</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-6919-5681</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Osmanov </surname>
              <initials>Sebastyan </initials>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0002-1233-0109</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Mikhailova</surname>
              <initials>Tatiana</initials>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Hybrid state of Fabry–Perot and Tamm plasmon-polariton modes in structures with different plasmon layers</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The paper presents the investigation of magnetophotonic crystals with different metal layers for the formation of a Tamm plasmon polariton. It was revealed that the structure with the Ag layer has the resonance with a higher optical  quality factor. It is shown how a change in the symmetry of the structure affects the properties of the hybrid state of Fabry–Perot and Tamm plasmon polariton modes. The effect of oblique incidence and polarization of incident light  on the localization of light in the layers of the structure is demonstrated.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.201</doi>
          <udk>537.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Tamm plasmon polariton</keyword>
            <keyword>magnetophotonic crystals</keyword>
            <keyword>magneto-optics</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.1/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>14-19</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0003-2498-1192</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>I.N. Ulyanov Chuvashia State University</orgName>
              <surname>Lepaev</surname>
              <initials>Alexander</initials>
              <address>Cheboksary, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0002-9723-5652</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>I.N. Ulyanov Chuvashia State University</orgName>
              <surname>Ksenofontov</surname>
              <initials>Sergey</initials>
              <address>Cheboksary, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0001-8432-5635</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>I.N. Ulyanov Chuvashia State University</orgName>
              <surname>Vasilyeva </surname>
              <initials>Olga </initials>
              <address>Cheboksary, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Chuvash State Pedagogical University named after I.Y. Yakovlev</orgName>
              <surname>Tashkova</surname>
              <initials>Ksenia</initials>
              <email>ksuha-92@inbox.ru</email>
              <address>Cheboksary, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Chemical activity of dispersed particles of potassium compounds in a pyrotechnic flame</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Modern developments of aerosol-generating compounds are associated with increased fire extinguishing efficiency and decreased temperature and chemical activity of twophase combustion product flow. When burning these  compounds in special generators, it is important to release particles as small as possible into the environment. The concentration of these particles must be commensurate with the concentration of active flame particles in the combustible material being extinguished. The structure of particles in pyrotechnic flames has been studied and the possibility of producing particles with reduced corrosion resistance has been demonstrated. A mechanism for the  interaction between reacting particles and potassium iodide crystals has also been proposed.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.202</doi>
          <udk>536.46</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>flame</keyword>
            <keyword>dispersed particle</keyword>
            <keyword>potassium oxide</keyword>
            <keyword>potassium iodide</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.2/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>20-24</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Voronezh State University of Engineering Technology</orgName>
              <surname>Kim </surname>
              <initials>Kseniya </initials>
              <email>kmkseniya@yandex.ru</email>
              <address>Voronezh, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0009-0005-4323-9163</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Chernenko</surname>
              <initials>Sergey</initials>
              <email>sergey.x173@mail.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Voronezh State University of Engineering Technology</orgName>
              <surname>Niftaliev</surname>
              <initials>Sabukhi</initials>
              <email>sabukhi@gmail.com</email>
              <address>Voronezh, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Voronezh State University of Engineering Technology</orgName>
              <surname>Kotov</surname>
              <initials>Gennady</initials>
              <email>giktv@mail.ru</email>
              <address>Voronezh, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Voronezh State University</orgName>
              <surname>Zolotukhin</surname>
              <initials>Dmitriy</initials>
              <email>zolotuhin@phys.vsu.ru</email>
              <address>Voronezh, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Chukavin</surname>
              <initials>Andrey</initials>
              <email>andrey_chukawin@mail.ru</email>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <orgName>Voronezh State University of Engineering Technology</orgName>
              <surname>Lenshin</surname>
              <initials>Alexander</initials>
              <email>lenshinas@mail.ru</email>
              <address>Voronezh, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Deposition of tin and gold on porous silicon by vacuum thermal spraying</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this work, a tin-gold layer was deposited on porous silicon (KEF 100) substrates by vacuum-thermal process (VUP) to improve the performance of sensors. By the method of X-ray photoelectron spectroscopy (XPS) we analyzed  the surface of the materials of the original porous silicon, as well as porous silicon with tin and gold, according to the method [1]). XPS overview spectra allow identifying elements present on the sample surface, as well as determining  their oxidation state and concentration. Using this information, valuable data on the surface composition can be obtained and the chemical structure of the sample can be analyzed. The results obtained showed that  using the vacuum-thermal method can be successfully applied to obtain nanocomposites of porous silicon with tin and gold. The obtained nanocomposites contain phases of tin dioxide, tin suboxide/monoxide and metallic tin.  Compared to tin, the gold film is formed in a smoother, more uniform manner. XPS spectra show that the gold is metallic, free of impurities and oxides.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.203</doi>
          <udk>546.3-126:544.2</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>porous silicon</keyword>
            <keyword>composites</keyword>
            <keyword>tin</keyword>
            <keyword>gold</keyword>
            <keyword>thin films</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.3/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>25-30</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Goroshko</surname>
              <initials>Dmitrii </initials>
              <email>goroshko@iacp.dvo.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0001-5386-1013</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Institute of Automation and Control Processes, Far Eastern Branch of the RAS</orgName>
              <surname>Galkin</surname>
              <initials>Konstantin</initials>
              <email>galkinkn@iacp.dvo.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0002-8726-9832</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Institute of Automation and Control Processes, Far Eastern Branch of the RAS</orgName>
              <surname>Chernev</surname>
              <initials>Igor</initials>
              <email>igor_chernev7@mail.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Maslov</surname>
              <initials>Andrei </initials>
              <email>maslov@iacp.dvo.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0003-4300-0070</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Kropachev</surname>
              <initials>Oleg</initials>
              <email>chernobez@gmail.com</email>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Subbotin</surname>
              <initials>Evgenii </initials>
              <email>jons712@mail.ru</email>
            </individInfo>
          </author>
          <author num="007">
            <authorCodes>
              <orcid>0009-0008-2152-140x</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Goroshko</surname>
              <initials>Olga</initials>
              <email>olgagoroshko@iacp.dvo.ru</email>
            </individInfo>
          </author>
          <author num="008">
            <authorCodes>
              <orcid>0000-0003-4127-2988</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Institute of Automation and Control Processes, Far Eastern Branch of the RAS</orgName>
              <surname>Galkin</surname>
              <initials>Nikolay</initials>
              <email>galkin@iacp.dvo.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">CoSi ultrathin films on Si(111) substrate: comparison of the stage formation in ultra-high vacuum and during annealing in argon</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">As a result of the study, optimal conditions were identified for the formation of ultrathin films of cobalt monosilicide (CoSi) on a silicon substrate during a single annealing (T = 500–600 °C) of chromium layers (2–10 nm), both under ultra-high vacuum conditions and in an argon environment during isochronous annealing. The formation of the phase composition in ultrathin CoSi films is uniquely controlled in situ during growth in ultrahigh vacuum by the appearance of a bulk plasma frequency peak at 20.2–20.3 eV in the EELS spectrum, a Raman peak at 198 (204) cm-1 in ex situ Raman studies of the annealing in an argon environment (in vacuum) and characteristic of CoSi optical functions of refractive index and extinction and optical phonons at 223.7, 302.5 and 418.6 cm-1. It has been established that cobalt films not subjected to thermal annealing in a vacuum begin to oxidize when annealed in an argon  environment, which is convenient to monitor by the appearance of Raman peaks at 187 cm-1 and 670-677 cm-1.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.204</doi>
          <udk>539.23+535.39+537.32+537.622</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>cobalt layer</keyword>
            <keyword>cobalt monosilicide</keyword>
            <keyword>ultrathin films</keyword>
            <keyword>isochronous annealing</keyword>
            <keyword>ultrahigh vacuum</keyword>
            <keyword>argon environment</keyword>
            <keyword>electronic structure</keyword>
            <keyword>phonon structure</keyword>
            <keyword>optical properties</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.4/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>31-35</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Subbotin</surname>
              <initials>Evgenii </initials>
              <email>jons712@mail.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Kozlov</surname>
              <initials>Aleksei</initials>
              <email>kozlov.ag@dvfu.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Goroshko</surname>
              <initials>Dmitrii </initials>
              <email>goroshko@iacp.dvo.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0002-8726-9832</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Institute of Automation and Control Processes, Far Eastern Branch of the RAS</orgName>
              <surname>Chernev</surname>
              <initials>Igor</initials>
              <email>igor_chernev7@mail.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0009-0007-4827-2653</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Khoroshilov</surname>
              <initials>Dmitry</initials>
            </individInfo>
          </author>
          <author num="006">
            <authorCodes>
              <orcid>0009-0007-5206-5753</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Lisenkov</surname>
              <initials>Oleg</initials>
            </individInfo>
          </author>
          <author num="007">
            <authorCodes>
              <orcid>0000-0001-6878-679X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Zhizhchenko</surname>
              <initials>Alexey</initials>
            </individInfo>
          </author>
          <author num="008">
            <authorCodes>
              <orcid>0000-0003-3377-1912</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Kitan' </surname>
              <initials>Sergei </initials>
            </individInfo>
          </author>
          <author num="009">
            <authorCodes>
              <orcid>0000-0003-4127-2988</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Institute of Automation and Control Processes, Far Eastern Branch of the RAS</orgName>
              <surname>Galkin</surname>
              <initials>Nikolay</initials>
              <email>galkin@iacp.dvo.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Mg2Si synthesis on silicon crystals with different aspect ratio</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In the paper synthesis of magnesium silicide (Mg2Si) features on silicon crystal with different aspect ratio were observed. These crystals were etched from monocrystalline borondoped silicon wafers with (100) orientation by metal-assisted chemical etching. The synthesis was occurred in ultra-high vacuum condition by a solid phase epitaxy and the modified reactive epitaxy with ultrafast Mg deposition. The substrate temperature range in both methods was  340–390 °C. As result co-axial core-shell Si/Mg2Si heterostructures with magnesium silicide thickness 500–1200 nm were produced.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.205</doi>
          <udk>539.23+539.25+537.32+537.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>silicon</keyword>
            <keyword>magnesium silicide</keyword>
            <keyword>Mg2Si</keyword>
            <keyword>epitaxy</keyword>
            <keyword>metal-assisted chemical etching</keyword>
            <keyword>MACE</keyword>
            <keyword>Raman</keyword>
            <keyword>SEM</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.5/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>36-41</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Kadinskaya </surname>
              <initials>Svetlana </initials>
              <email>skadinskaya@bk.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0002-3469-5897</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Kondratev</surname>
              <initials>Valeriy</initials>
              <email>kvm_96@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0009-0008-4344-4863</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Nikolaeva </surname>
              <initials>Aleksandra </initials>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>St.Petersburg State University of Film and Television</orgName>
              <surname>Akopyan</surname>
              <initials>Irina</initials>
              <email>irina-akopyan@yandex.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>St. Petersburg State University</orgName>
              <surname>Serov</surname>
              <initials>Alexey</initials>
              <email>a.serov@spbu.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>St.Petersburg  State University</orgName>
              <surname>Labzovskaya</surname>
              <initials>Mariana</initials>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="007">
            <authorCodes>
              <orcid>0000-0002-3705-9706</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>St.Petersburg State University of Film and Television</orgName>
              <surname>Mikushev</surname>
              <initials>Sergey</initials>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="008">
            <individInfo lang="ENG">
              <orgName>St.Petersburg  State University</orgName>
              <surname>Novikov</surname>
              <initials>Boris</initials>
              <email>bono1933@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="009">
            <individInfo lang="ENG">
              <orgName>St. Petersburg State University</orgName>
              <surname>Shtrom</surname>
              <initials>Igor</initials>
              <email>i.shtrom@spbu.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="010">
            <authorCodes>
              <orcid>0000-0001-7223-7232</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Moscow Institute of Physics and Technology (National Research University)</orgName>
              <surname>Bolshakov</surname>
              <initials>Alexey</initials>
              <email>acr1235@mail.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Random lasing in hydrothermal ZnO structures</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this manuscript, we present a study on the optical properties of ZnO nanowires synthesized via hydrothermal method. The nanowires were characterized by low temperature photoluminescence spectroscopy, revealing resonant  modes indicative of random lasing behavior provided with scattering by misoriented nanowires. The spectral position of the resonant modes suggests lasing in the region of the P band of exciton-exciton interaction. Our results also indicate a correlation between the surface density of the nanostructures and peak intensity of the emission. Overall, our findings demonstrate the potential of hydrothermal synthesis for fabricating efficient light-emitting devices  based on ZnO.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.206</doi>
          <udk>535.015</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>zinc oxide</keyword>
            <keyword>hydrothermal</keyword>
            <keyword>photoluminescence</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.6/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>42-45</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Filippov</surname>
              <initials>Ivan</initials>
              <email>ivn.filippov@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0002-0358-7818</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Yakushova</surname>
              <initials>Nadezhda</initials>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0001-8318-8149</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Karmanov </surname>
              <initials>Andrey </initials>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>gubich.niifi@gmail.com</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Gubich</surname>
              <initials>Ivan</initials>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0003-3037-3601</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Pronin</surname>
              <initials>Igor</initials>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Hierarchical self-assembly of SiO2-SnO2 nanoand microstructures in combined sol-gel systems</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Using the IR spectroscopy method, studies were carried out on the processes of hierarchical self-assembly of SiO2-SnO2 nano- and microstructures in combined sol-gel systems obtained by mixing film-forming sols with different  maturation times, which meets the goals and objectives of nanostructural engineering. Characteristic absorption peaks were identified that correspond to the process of hydrolytic polycondensation and carry information about the process of self-assembly in the analyzed systems.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.207</doi>
          <udk>538.975</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>nanostructure engineering</keyword>
            <keyword>hierarchical self-assembly</keyword>
            <keyword>sol-gel technology</keyword>
            <keyword>spectroscopic investigation</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.7/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>46-51</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Moscow Pedagogical State University</orgName>
              <surname>Bondareva </surname>
              <initials>Polina </initials>
              <email>p.bondareva2016@yandex.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0001-6494-0147</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Moscow Pedagogical State University</orgName>
              <surname>Shein</surname>
              <initials>Kirill</initials>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Lyubchak </surname>
              <initials>Anastasia </initials>
              <email>anlyubchak@miem.hse.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0009-0008-4349-7332</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Moscow Pedagogical State University</orgName>
              <surname>Izmaylov</surname>
              <initials>Ramil</initials>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Baeva</surname>
              <initials>Elmira M.</initials>
              <email>baeva.elm@gmail.com</email>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Goltsman</surname>
              <initials>Grigory </initials>
              <email>goltsman@rplab.ru</email>
            </individInfo>
          </author>
          <author num="007">
            <authorCodes>
              <orcid>0000-0003-2560-6503</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>National Research University “Higher School of Economics”</orgName>
              <surname>Gayduchenko</surname>
              <initials>Igor</initials>
              <email>igaiduchenko@hse.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Johnson noise thermometry of CVD graphene bolometers</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Graphene, due to its record low electron heat capacity and weak electron-phonon coupling at low temperatures, is considered as a promising material for creating terahertz hot electron bolometers. The main challenge to the  development of such devices is the weak dependence of graphene resistance on temperature. Here we demonstrate measurement system based on Johnson noise thermometry to directly measure electron temperature in graphene. We measure thermal conductance due to electron-phonon coupling at bath temperature 4,2 K. Our graphene is synthesized by chemical vapor deposition (CVD) method and transferred to Si/SiO2 substrate. The electron–phonon  thermal conductance has a temperature power law of T4 which is typical for highly disordered graphene. We estimate the sensitivity of CVD graphene based bolometer with Johnson noise readout. The internal noise equivalent power  (NEP) is determined by thermodynamic fluctuations and is equal to 3 fW/Hz0.5. The sensitivity of the detector is limited by the read out noise and is equal to 267 pW/Hz0.5. Thе low internal NEP together with potential fast  response time makes CVD graphene to be promising material in the area of bolometry.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.208</doi>
          <udk>538.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>graphene</keyword>
            <keyword>THz detectors</keyword>
            <keyword>bolometers</keyword>
            <keyword>noise thermometry</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.8/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>52-56</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Lagutkina </surname>
              <initials>Aleksandra</initials>
              <email>lagutkina.aa@phystech.edu</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Vizgalov</surname>
              <initials>Victor</initials>
              <email>vizgalov.va@mipt.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Development of solid-state composite cathode material for solid-state lithium-ion batteries based on lithium ferrophosphate LiFePO4</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In the past few decades all-solid-state lithium-ion batteries have become a promising frontier due to their increased safety, higher energy density and unique mechanical properties. One of the main issues in this field is establishing  steady transport of lithium ions across the electrode–electrolyte interface, which requires modifications of the electrode structure. In this research we investigated mechanical properties, capacity and cycling performance of a composite cathode based on solid polymer electrolyte as a binder, lithium ferrophosphate as active material and carbon black as electron conductor. Composite cathode was prepared with the help of ball-milling to reduce the particle  size and increase the homogeneity of the material, which resulted in mechanically stable flexible crack-free electrodes after coating, drying and calendaring. Achieved specific capacity of the electrodes corresponds to  theoretical values, electrodes show long-term sustainability in systems with liquid electrolyte and are applicable to solid-state systems.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.209</doi>
          <udk>621.3.035.221.14</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>all-solid-state lithium-ion battery</keyword>
            <keyword>composite electrodes</keyword>
            <keyword>lithium ferrophosphate electrodes</keyword>
            <keyword>solid electrolyte</keyword>
            <keyword>polymer electrolyte</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.9/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>57-61</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0003-5049-538X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Zavyalova </surname>
              <initials>Eseniya </initials>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0001-7143-6686</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Kusnetsov</surname>
              <initials>Alexey</initials>
              <email>alkuznetsov1998@gmail.com</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0001-7223-7232</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Moscow Institute of Physics and Technology (National Research University)</orgName>
              <surname>Bolshakov</surname>
              <initials>Alexey</initials>
              <email>acr1235@mail.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Peculiarities of the local electromagnetic field distribution in non-van-der-Waals InGaS3 thin layers slot waveguides</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">InGaS3 thin layers are promising nanostrures in the field of nanophotonics owing to the broad bandgap, sufficiently high refractive index and the simplicity of fabrication. Here we numerically investigate a system based on InGaS3  waveguides, standing side by side. We demonstrate the localization of the electromagnetic field inside the gap between two waveguides and obtain the refractive indices and losses for the slot waveguide modes at a wavelength of 505 nm. Transmittance spectra of considered configurations of different geometrical parameters were obtained The waveguiding cut-off related to the absorption inside the material and the delocalization of the electromagnetic field  was determined. The obtained results open the possibility for fabrication of novel photonic devices based on InGaS3 thin layers.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.210</doi>
          <udk>538.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>InGaS3</keyword>
            <keyword>slot waveguide</keyword>
            <keyword>transmittance</keyword>
            <keyword>thin layer</keyword>
            <keyword>numerical simulations</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.10/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>62-65</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Nouraldeen</surname>
              <initials>Messan</initials>
              <email>messannouraldeen@phystech.edu</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0009-0001-6926-5205</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Shestakov</surname>
              <initials>Nikita</initials>
              <email>shestakov.nr@phystech.edu</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Moscow Institute of Physics and Technology (National Research University)</orgName>
              <surname>Vershinina</surname>
              <initials>Olesya</initials>
              <email>seraia.ov@phystech.edu</email>
              <address>Dolgoprudny, Moscow region, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Ivanov</surname>
              <initials>Victor</initials>
              <email>ivanov.vv@mipt.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Synthesis of aluminum nanoparticles using spark discharge for applications in ultraviolet plasmonics</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This work demonstrates synthesis Al metal nanoparticles with plasmon resonance in the ultraviolet region by the spark discharge method in an argon atmosphere. The resulting primary particles have an Al metal core and a natural  oxide shell and size in range from 5 to 50 nm. Importantly, these nanoparticle ensembles show wide extinction peaks, with the highest point between 250 and 480 nm wavelength. The position of the peak can be varied by synthesis  parameters. During our research, we employed laser radiation at a wavelength of 355 nm, with pulse energies reaching up to 350 μJ and pulse repetition rates of up to 2000 Hz. We observed that the sintering process of  nanoparticles exhibited a dynamic change in size, which correlated with the energy of the laser pulses. This dependence was illustrated by an S-shaped shrinkage curve. By subjecting the initial agglomerates to a series of impacting  laser pulses, we successfully achieved complete sintering, resulting in the transformation of the agglomerates into spherical nanoparticles.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.211</doi>
          <udk>537.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>aluminum nanoparticles</keyword>
            <keyword>nanoparticles sintering</keyword>
            <keyword>laser sintering</keyword>
            <keyword>plasmon resonance</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.11/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>66-70</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Kenesbay </surname>
              <initials>Ramazan </initials>
              <email>ramazan.kenesbay.1999@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Toikka </surname>
              <initials>Andrei </initials>
              <email>atoikka@obraz.pro</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Baeva  </surname>
              <initials>Maria</initials>
              <email>maria.baeva111@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0001-9792-045X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Mukhin</surname>
              <initials>Ivan</initials>
              <email>muhin_is@spbstu.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0003-4517-0807</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Mitin</surname>
              <initials>Dmitry</initials>
              <email>mitindm@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Suppressed phase segregation in CsPbIBr2 based PeLEC</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this work we describe some strategies to suppress phase segregation in perovskite light-emitting electrochemical cells based on mixed halide CsPbIBr2 perovskite. Lead halide perovskites are widely used class materials used for  creating optoelectronic devices. However, appearing phase segregation causes peak separation on photo- and electro luminance spectra, which limit efficiency and color rendering of devices based on lead halide perovskite materials. Improving crystallinity of perovskite film by annealing temperature controlling can affect halide separation. Mn2+ doping was used to enhance materials stability of lead halide perovskite. Another strategy is crystal grains  passivation by polymers, i.e. polyethylene oxide and polyvinylidene fluoride, which reduce crystal defect density that cause phase segregation. All these strategies were applied in this work and demonstrate single peaks on photo-  and electro luminance spectra. Suggested solution of phase segregation problem allows to create more stable and effective CsPbIBr2 based perovskite light-emitting electrochemical cells that work in red range of visible spectrum  (620-680 nm).</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.212</doi>
          <udk>537.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>CsPbIBr2</keyword>
            <keyword>perovskite</keyword>
            <keyword>PeLEC</keyword>
            <keyword>phase segregation</keyword>
            <keyword>mixed anion</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.12/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>71-77</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0001-3683-5558</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Papylev</surname>
              <initials>Denis</initials>
              <email>dspapylev@itmo.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Kolodeznyi</surname>
              <initials>Evgenii</initials>
              <email>evgenii_kolodeznyi@itmo.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Babichev</surname>
              <initials>Andrei</initials>
              <email>scientific.ocean@gmail.com.</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Kharin </surname>
              <initials>Nikita </initials>
              <email>kharin.nikita66@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Voznyuk</surname>
              <initials>Gleb</initials>
              <email>gvvozniuk@itmo.ru</email>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Mitrofanov</surname>
              <initials>Maksim</initials>
              <email>Mitrofanov@mail.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="007">
            <authorCodes>
              <orcid>0000-0003-4851-3641</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Slipchenko</surname>
              <initials>Sergey</initials>
            </individInfo>
          </author>
          <author num="008">
            <individInfo lang="ENG">
              <surname>Lyutetskii</surname>
              <initials>Andrey</initials>
              <email>Lutetskiy@mail.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="009">
            <individInfo lang="ENG">
              <surname>Evtikhiev</surname>
              <initials>Vadim</initials>
              <email>Evtikhiev@mail.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="010">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Karachinsky</surname>
              <initials>Leonid</initials>
              <email>lkarachinsky@itmo.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="011">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Novikov</surname>
              <initials>Innokenty</initials>
              <email>innokenty.novikov@itmo.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="012">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Panevin</surname>
              <initials>Vadim</initials>
              <email>pvyu@rphf.spbstu.ru</email>
            </individInfo>
          </author>
          <author num="013">
            <individInfo lang="ENG">
              <surname>Pikhtin</surname>
              <initials>Nikita</initials>
              <email>nike@hpld.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="014">
            <authorCodes>
              <orcid>0000-0002-0789-4241</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Egorov</surname>
              <initials>Anton</initials>
              <email>anton.egorov@connector-optics.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Temperature performance of ring quantum-cascade laser with staircase-like distributed feedback grating</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Direct ion-beam lithography was used to realize the staircase-like second order distributed feedback grating formed in the top cladding layers of ring quantum-cascade laser. As a result, the depth of grating slits was varied from 0.6  to 2.6 μm along the ring cavity. The whispering gallery modes lasing with near 1 kA/cm2 threshold current density at 77 K temperature was obtained with lasing wavelength close to 7.64 μm. Rise of the temperature up to 292 K yields  the multi-mode lasing near to 7.94 μm with moderate threshold current density ~4 kA/cm2. Time-resolved spectral characterization results are also discussed.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.213</doi>
          <udk>538.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>molecular-beam epitaxy</keyword>
            <keyword>quantum-cascade laser</keyword>
            <keyword>indium phosphide</keyword>
            <keyword>ion-beam etching</keyword>
            <keyword>direct lithography</keyword>
            <keyword>ring cavity</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.13/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>78-83</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Arsenov </surname>
              <initials>Pavel </initials>
              <email>arsenov.pv@mipt.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Pilyushenko</surname>
              <initials>Konstantin</initials>
              <email>piliushenko.ks@mipt.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Kazarinova</surname>
              <initials>Daria</initials>
              <email>kazarinova.dd@mipt.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Vlasov</surname>
              <initials>Ivan</initials>
              <email>vlasov.is@mipt.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Moscow Institute of Physics and Technology (National Research University)</orgName>
              <surname>Volkov</surname>
              <initials>Ivan</initials>
              <email>volkov.ia@mipt.ru</email>
              <address>Dolgoprudny, Moscow region, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Millifluidic polyol synthesis of Ag nanowires and microplotter printing of transparent conductive films</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Millifluidic polyol synthesis teflon tube (i.d. 1 mm) was studied and used to obtain silver nanowire dispersions. As a result of the experiments, the optimal concentrations of the reagents (silver nitrate AgNO3, ethylene glycol and  polyvinylpyrrolidone) were investigated and found to obtain homogeneous nanowires with high length-to-diameter ratios. As a result of the synthesis, Ag nanowires were obtained, which were used to form transparent conductive electrodes using microplotter printing. Transparent conductive electrodes with high transparency of more than 80% at a wavelength of 550 nm with a surface resistance of 52-229 Ohm/sq.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.214</doi>
          <udk>538.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>polyol synthesis</keyword>
            <keyword>millifluidics</keyword>
            <keyword>silver nanowires</keyword>
            <keyword>microplotter printing</keyword>
            <keyword>transparent electrode</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.14/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>84-87</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0001-8440-494X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Novikova</surname>
              <initials>Kristina</initials>
              <email>novikova_k@spbau.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0009-0000-3147-6974</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University of RAS</orgName>
              <surname>Funtikova</surname>
              <initials>Anastasiia</initials>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0002-8661-4083</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Mozharov</surname>
              <initials>Alexey</initials>
              <email>mozharov@spbau.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0001-9792-045X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Mukhin</surname>
              <initials>Ivan</initials>
              <email>muhin_is@spbstu.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Numerical investigation of influence GaP nanowire geometry to light extraction efficiency of red light-emitting diode</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Currently, micro-LEDs are promising optoelectronic devices. Numerical investigation was carried out to study the influence of the GaP nanowires geometric parameters on the light extraction efficiency to improve micro-LEDs  efficiency. The nanowires diameter has been shown to significantly alter the light extraction efficiency. The optimal nanowire diameter for a wavelength of 650 nm is close to 200 nm.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.215</doi>
          <udk>538.975, 538.958</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Red LEDs</keyword>
            <keyword>GaP</keyword>
            <keyword>NWs</keyword>
            <keyword>molecular beam epitaxy</keyword>
            <keyword>light extraction efficiency</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.15/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>88-92</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Duplinsky</surname>
              <initials>Alexey</initials>
              <email>a.duplinsky@goqrate.com</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0003-1511-1128</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Khmelev</surname>
              <initials>Aleksandr</initials>
              <email>a.khmelev@goqrate.com</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0009-0006-5851-6175</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Bakhshaliev</surname>
              <initials>Ruslan</initials>
              <email>r.bakhshaliev@goqrate.com</email>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0009-0000-8253-7263</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Sevryukov</surname>
              <initials>Dmitriy</initials>
              <email>d.sevryukov@goqrate.com</email>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0009-0002-2294-3731</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Barbyshev</surname>
              <initials>Konstantin</initials>
              <email>k.barbyshev@goqrate.com</email>
            </individInfo>
          </author>
          <author num="006">
            <authorCodes>
              <orcid>0000-0002-1599-9801</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Kurochkin</surname>
              <initials>Vladimir</initials>
              <email>v.kurochkin@rqc.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Polarization extinction ratio conversion due to pointing system impact in satellite quantum key distribution</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Quantum key distribution via satellites enables the technology to be applied at transcontinental scale; nevertheless, in contrast to fiber systems, using a free-space optical communication channel presents certain extra technological  obstacles. The contribution of the acquisition, pointing and tracking system’s operation to the potential quantum bit error value is investigated in this research. The polarization extinction ratio measurements varying with the pointing  mirror angular position are reported, based on these data, the upper limit of the quantum bit error is predicted for several types of satellite passages.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.216</doi>
          <udk>29.31.00</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>quantum key distribution</keyword>
            <keyword>polarimetry</keyword>
            <keyword>polarization extinction ratio</keyword>
            <keyword>free-space optics</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.16/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>93-97</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-8726-0416</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Dashkov </surname>
              <initials>Alexander </initials>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0009-0006-9763-2830</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Kostromin</surname>
              <initials>Nikita</initials>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Barykin </surname>
              <initials>Dmitrii </initials>
              <email>d.a.barykin02@mail.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Goray</surname>
              <initials>Leonid</initials>
              <email>lig@pcgrate.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Optimization of mid-infrared quantum cascade detectors</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this work, the optimization of the design of quantum cascade detectors is considered. The initial design studied was a detector structure based on an AlGaAs/GaAs heteropair, consisting of four quantum wells. A genetic algorithm  was utilized to optimize the responsivity and detectivity of the design under study by varying of the widths and chemical composition of the first five layers of the cascade. The responsivity and detectivity were simplified to the  characteristics, that can be evaluated based on the solutions of the Schrödinger and Boltzmann equations. The results demonstrate a strong dependence on the optimization algorithm parameters and designate significant change  from the initial design. We have shown that to achieve optimal output characteristics and improve the convergence rate, one must use larger populations and high mutation probability in the genetic algorithm. The analysis of the obtained designs also shows that additional regularization techniques are required to achieve better output characteristics of the device. Specifically, the appropriate weighting of the set of optimized characteristics must be  determined before final optimization.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.217</doi>
          <udk>538.915, 519.688</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>quantum cascade detector</keyword>
            <keyword>optimization</keyword>
            <keyword>numerical simulations</keyword>
            <keyword>Schrodinger equation</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.17/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>98-102</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0006-9763-2830</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Kostromin</surname>
              <initials>Nikita</initials>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0002-8726-0416</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Dashkov </surname>
              <initials>Alexander </initials>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Barykin </surname>
              <initials>Dmitrii </initials>
              <email>d.a.barykin02@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Numerical optimization of semiconductor waveguide structure</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Research on radiation sources in the IR and THz ranges operating at room temperature is still highly attractive to this day. Waveguides play a critical role in these structures and their improvement is also required. This paper studies  the optimization of waveguides based on GaAs material with different doping levels of layers to reduce absorption losses and increase the optical confinement factor. The optimization is carried out in three steps: selection of  optimization parameters, determination of initial values of parameters and Bayesian optimization. The thickness and doping level of heavily doped layers are chosen as optimization parameters. The results show the Bayesian  algorithm converges to the desired values rather quickly. It was found that the dependence of the waveguide output characteristics on concentration is weaker than on layer thickness. An increase in layer thickness leads to an increase in losses. Weak asymmetry in the structure can lead to a slight improvement in the confinement factor value.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.218</doi>
          <udk>537.87, 519.688</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>quantum cascade laser</keyword>
            <keyword>waveguide</keyword>
            <keyword>gallium arsenide</keyword>
            <keyword>optimization</keyword>
            <keyword>Bayesian optimization</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.18/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>103-106</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Institute of Automation and Control Processes FEB RAS</orgName>
              <surname>Balagan</surname>
              <initials>Semyon</initials>
              <email>simak_64@mail.ru</email>
              <address>Vladivostok, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0003-2170-7972</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Shevlyagin</surname>
              <initials>Alexander</initials>
              <email>shevlyagin@iacp.dvo.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">The quest for direct band beta iron disilicide: collaboration of theoretical and experimental approaches</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In the presented work, a theoretical study of the effect of β-FeSi2 lattice deformation on the type and magnitude of the first transition in the electronic band structure was carried out. Images of nanocrystallites obtained using high-resolution transmission electron microscopy were used as a source of deformation data. All in all, 137 variants of β-FeSi2 lattice deformation were considered in the work. Six types of first transitions different from the first transition in unstrained β-FeSi2 were discovered. The values of the first transitions from 0.02 to 0.64 eV (direct) and from 0.01 to 1.12 eV (indirect) were obtained.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.219</doi>
          <udk>535-15+539.21+539.25</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>silicon</keyword>
            <keyword>beta Fe disilicide</keyword>
            <keyword>ab initio calculation</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.19/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>107-111</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Institute of Automation and Control Processes FEB RAS</orgName>
              <surname>Balagan</surname>
              <initials>Semyon</initials>
              <email>simak_64@mail.ru</email>
              <address>Vladivostok, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0003-4127-2988</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Institute of Automation and Control Processes, Far Eastern Branch of the RAS</orgName>
              <surname>Galkin</surname>
              <initials>Nikolay</initials>
              <email>galkin@iacp.dvo.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Effect of diameter on lattice thermal conductivity of α-FeSi2 and ε-FeSi nanowires</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this study the effect of α-FeSi2 and ε-FeSi nanowires diameter on the lattice thermal conductivity was considered. Ab initio modeling was performed in the temperature range of 100–700 °K and nanowires diameter range of 6–48  nm. Results showed that at minimal considered diameter nanowires have 1.4–4.5 times lower lattice thermal conductivity than bulk material depending on temperature and nanowire elongate direction.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.220</doi>
          <udk>536.2+537.32+539.21</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>silicon</keyword>
            <keyword>Fe silicides</keyword>
            <keyword>nanowires</keyword>
            <keyword>ab initio calculation</keyword>
            <keyword>thermal conductivity</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.20/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>112-115</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Babukhin </surname>
              <initials>Danila </initials>
              <email>dv.babukhin@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Sych</surname>
              <initials>Denis</initials>
              <email>denis.sych@gmail.com</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Efficiency analysis of generative adversarial networks for single pixel imaging</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The single-pixel camera provides a prospective tool for imaging beyond conventional pixel-matrix-based devices. In recent years, neural networks have become a part of singlepixel imaging as a method to restore an image from  intensity measurements computationally. Generative adversarial networks (GANs) are particularly well suited for this task. In this paper, we investigate the performance of a generative adversarial least squares network in the task of image reconstruction from a single-pixel camera at low sampling rates. We demonstrate that stable successful image reconstruction is possible at sampling rates around 8%, and that the reconstructed images should match the  structure of the images present in the training sample.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.221</doi>
          <udk>53</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>single pixel imaging</keyword>
            <keyword>neural networks</keyword>
            <keyword>image restoration</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.21/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>116-120</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Lyubchak </surname>
              <initials>Anastasia </initials>
              <email>anlyubchak@miem.hse.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0001-6494-0147</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Moscow Pedagogical State University</orgName>
              <surname>Shein</surname>
              <initials>Kirill</initials>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Goltsman</surname>
              <initials>Grigory </initials>
              <email>goltsman@rplab.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0003-2560-6503</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>National Research University “Higher School of Economics”</orgName>
              <surname>Gayduchenko</surname>
              <initials>Igor</initials>
              <email>igaiduchenko@hse.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Waveguide-integrated graphene terahertz detector</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Terahertz (THz) integrated circuits is a promising platform to create low cost and efficient components for high-speed sixth-generation (6G) communication networks. One of the key components for this application is detectors and  mixers integrated on THz silicon waveguide. Graphene, due to its unique and tunable properties such as zero band gap, high charge mobility and low electronic heat capacity, has already demonstrated promise in free space THz  detectors, mixers and modulators development. Moreover, graphene photodetectors integrated on the waveguide have already been demonstrated in visible and near infrared regions. In this work we present an electromagnetic  model of graphene terahertz detector integrated on silicon waveguide. Graphene THz detector was designed for operation at 150 GHz and can be used in the nextgeneration wireless communications for an ultrafast on-chip THz  signal processing.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.222</doi>
          <udk>535.93</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>terahertz</keyword>
            <keyword>dielectric waveguide</keyword>
            <keyword>photonic-integrated circuit</keyword>
            <keyword>dielectric effectivemedium waveguide</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.22/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>121-124</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0001-7989-6513</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Malokhatko </surname>
              <initials>Sofya </initials>
              <email>malohatko@sfedu.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0001-8635-2573</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Gusev</surname>
              <initials>Evgeny</initials>
              <email>eyugusev@sfedu.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Jiang </surname>
              <initials>Liyuan</initials>
              <email>jiangliyuan@sdlaser.cn</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Southern Federal University</orgName>
              <surname>Ageev</surname>
              <initials>Oleg</initials>
              <email>ageev@sfedu.ru</email>
              <address>Taganrog, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Effect of internal mechanical stresses in a multilayer structure on displacement for various designs of microelectromechanical membranes</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In the manufacture of microelectromechanical sensors based on multilayer membranes, internal mechanical stresses arise in the structure. A preliminary assessment of the effect of internal mechanical stresses on the initial  displacement of structures of various shapes will allow to choose the most appropriate design solution for various applications. The paper presents the results of numerical modeling of the structures of multilayer membranes of three types: round, square and square with transverse and angular beams. The displacement values for each type of multilayer membranes are obtained in accordance with the influence of internal mechanical stresses in each layer. The  results showed that the effect of internal mechanical stresses in films (SiO2, Mo, ZnO) of a multilayer structure on square and round membranes is insignificant (values ranged from 2.43·10–13 to 7.83·10–13 nm). Internal mechanical  stresses in membrane layers with transverse and angular beams make a significant contribution to the initial displacement of the structure (values ranged from 20 to 570 nm), however, the sensitivity of such structures is  higher than that of rigid structures. The influence of technological conditions of film formation in multilayer membranes on their stress-strain state in ultrasonic sensors is investigated. The values of internal mechanical stresses in  SiO2 films are obtained.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.223</doi>
          <udk>51-74</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>microelectromechanical sensors</keyword>
            <keyword>multilayer membrane</keyword>
            <keyword>internal mechanical stress</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.23/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>125-129</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0004-6560-7409</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Tabieva </surname>
              <initials>Arina </initials>
              <email>tabieva.arina@itmo.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0002-5109-2086</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Trifanov</surname>
              <initials>Alexander</initials>
              <email>alextrifanov@itmo.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0002-6482-0951</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Tushavin</surname>
              <initials>Gleb</initials>
              <email>tushavin@itmo.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0009-0006-8671-1752</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Matveeva </surname>
              <initials>Milena</initials>
              <email>mvmatveeva@itmo.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Modeling the dynamics and properties of the squeezed state of light in a phase modulator</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this work, we investigate the transformation of a squeezed by photon-number quantum state of a single-mode optical signal during phase modulation process. Within the framework of the semiclassical model of the phase  modulator, we obtained estimations for the statistical properties of individual modes and mode sub-ensembles of the signal spectrum. We shown that for the case of modulation of squeezed vacuum, the entire spectrum of the  modulated signal evaluates to the entangled state of a number of frequency modes. The results obtained in this work enable the use of squeezed modulated light states in quantum key distribution systems and various interferometric applications.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.224</doi>
          <udk>535.14</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>phase modulator</keyword>
            <keyword>multimode quantum optical signal</keyword>
            <keyword>SU(1.1) algebra</keyword>
            <keyword>squeezed state of light</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.24/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>130-134</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0006-8671-1752</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Matveeva </surname>
              <initials>Milena</initials>
              <email>mvmatveeva@itmo.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0002-5109-2086</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Trifanov</surname>
              <initials>Alexander</initials>
              <email>alextrifanov@itmo.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0002-6482-0951</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Tushavin</surname>
              <initials>Gleb</initials>
              <email>tushavin@itmo.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0009-0004-6560-7409</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Tabieva </surname>
              <initials>Arina </initials>
              <email>tabieva.arina@itmo.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Investigation of entangled states of a three-mode electro-optical modulator</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">We study the dynamic properties and algebraic invariants of the model of phase modulation of quantum light by microwave radiation. The quasi-energy levels of the system are described by the eigenvalues of the effective  Hamiltonian, which generators obbey to su(2) algebra and have a nontrivial internal structure. The dynamics of states is studied in Fock space. Invariant Hamiltonian spaces are associated with irreducible representations of the su(2) algebra, within which the Hamiltonian matrix is partitioned into finite blocks. Within this model we investigate the generating process of two-mode entangled states using the single-tone Fock state at the input of phase modulator.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.225</doi>
          <udk>517.986.5</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>phase modulator</keyword>
            <keyword>Hamiltonian</keyword>
            <keyword>entangled states</keyword>
            <keyword>ladder operators</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.25/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>135-138</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Federal State Budgetary Institution of Science K.A. Valiev Institute of Physics and Technology of the RAS Yaroslavl Branch</orgName>
              <surname>Grushevsky </surname>
              <initials>Egor </initials>
              <email>yaregor@mail.ru</email>
              <address>Yaroslavl, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Federal State Budgetary Institution of Science K.A. Valiev Institute of Physics and Technology of the RAS Yaroslavl Branch</orgName>
              <surname>Savinsky</surname>
              <initials>Nikolay</initials>
              <email>savinski1@yandex.ru</email>
              <address>Yaroslavl, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Trushin</surname>
              <initials>Oleg</initials>
              <email>otrushin@gmail.com</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">The method of obtaining Ni and Co nanowires in porous anodic alumina matrices</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This paper focuses on the investigation of producing Ni and Co nanowire arrays synthesized using Al2O3 porous template. Porous alumina samples were obtained by double electrochemical anodizing of the prepared foil in 0.5 M  oxalic acid, at a voltage of 60 V and a temperature of 25 °C. The pore diameter distribution maximums are about 85 nm. Nanowires were electrodeposited in a 3-electrode electrochemical cell into prepared matrices in a potentiostatic and galvanostatic mode. Studies of the surface of porous membranes and the geometry of nanowires were carried out using scanning electron microscope.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.226</doi>
          <udk>539.232; 542.06; 546–1; 544.654.2</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>anodization</keyword>
            <keyword>aluminum oxide matrices</keyword>
            <keyword>nanowires</keyword>
            <keyword>electrochemical deposition</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.26/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>139-142</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>National Research Tomsk State University</orgName>
              <surname>Kukenov</surname>
              <initials>Olzhas</initials>
              <email>okukenov@mail.ru</email>
              <address>Tomsk, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0009-0008-8052-3253</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>National Research Tomsk State University</orgName>
              <surname>Dirko</surname>
              <initials>Vladimir</initials>
              <address>Tomsk, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0002-4029-8353</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>National Research Tomsk State University</orgName>
              <surname>Lozovoy</surname>
              <initials>Kirill</initials>
              <address>Tomsk, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>National Research Tomsk State University</orgName>
              <surname>Kokhanenko  </surname>
              <initials>Andrey</initials>
              <email>kokh@mail.tsu.ru</email>
              <address>Tomsk, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0002-1196-6199</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Voitsekhovskii</surname>
              <initials>Alexander</initials>
            </individInfo>
          </author>
          <author num="006">
            <authorCodes>
              <orcid>0009-0000-9839-894X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Maier</surname>
              <initials>Xeniya</initials>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Study of the formation mechanisms of Ge terraces on Si(100) during MBE using the RHEED method</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In the work, a comparison of the widths of Ge and Si terraces on Si(100) at temperatures in the range from 200 °C to 800 °C was made using diffraction patterns in the [100] direction. The temperatures at which the growth  mechanisms for the formation of monoatomic steps of Ge on Si(100) change have been established.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.227</doi>
          <udk>539.27, 539.234</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>molecular beam epitaxy</keyword>
            <keyword>reflection high-energy electron diffraction</keyword>
            <keyword>step-flow growth</keyword>
            <keyword>heteroepitaxy</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.27/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>143-147</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Gridchin </surname>
              <initials>Vladislav</initials>
              <email>gridchinvo@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0002-4110-1647</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Shugabaev</surname>
              <initials>Talgat</initials>
              <email>talgashugabaev@mail.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Lendyashova </surname>
              <initials>Vera </initials>
              <email>erilerican@gmail.com</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Kotlyar</surname>
              <initials>Konstantin</initials>
              <email>konstantin21kt@gmail.com</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>St. Petersburg State University</orgName>
              <surname>Khrebtov</surname>
              <initials>Artem</initials>
              <email>khrebtovart@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Dragunova </surname>
              <initials>Anna </initials>
              <email>anndra@list.ru</email>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <surname>Kryzhanovskaya Natalia V.</surname>
              <initials>Natalia</initials>
              <email>nkryzhanovskaya@hse.ru</email>
            </individInfo>
          </author>
          <author num="008">
            <individInfo lang="ENG">
              <surname>Reznik</surname>
              <initials>Rodion </initials>
              <email>moment92@mail.ru</email>
            </individInfo>
          </author>
          <author num="009">
            <individInfo lang="ENG">
              <surname>Cirlin</surname>
              <initials>George </initials>
              <email>george.cirlin@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Growth of long core-shell InGaN nanowires by plasma-assisted molecular beam epitaxy with gradually increasing substrate temperature</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This work presents the results of a study on the morphological and optical properties of InGaN nanowires grown using two different substrate temperature regimes. It is obtained that a gradual increase in the substrate temperature  during the growth process makes it possible to obtain long morphologically homogeneous nanowires with a core-shell structure. The photoluminescence of nanowires is in the green range and is three times higher than that of similar  structures grown in a stationary temperature regime.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.228</doi>
          <udk>538.975</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>InGaN</keyword>
            <keyword>nanowires</keyword>
            <keyword>core-shell</keyword>
            <keyword>MBE</keyword>
            <keyword>photoluminescence</keyword>
            <keyword>gradually increasing substrate temperature</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.28/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>148-151</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-3779-8242</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Starnikova</surname>
              <initials>Alexandra</initials>
              <email>starnikova@sfedu.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0003-3725-6053</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Petrov</surname>
              <initials>Viktor</initials>
              <email>vvpetrov@sfedu.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Electrical properties of ZnO/Au and ZnO/SnO2 nanorod arrays when exposed to UV irradiation with controlled intensity</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Arrays of zinc oxide (ZnO) nanorods were synthesized on quartz substrates by the hydrothermal method. The nanorods were grown mainly in a vertical orientation, had a length of 500–800 nm and an average cross-sectional size of  40–80 nm. Gold nanoclusters with average sizes of 9 ± 1 nm and 4 ± 0.5 nm and tin with average sizes of 30 ± 5 nm and 15 ± 3 nm were formed on top of the ZnO nanorods. Annealing was carried out at 300 °C for 2 hours with the  formation of arrays of ZnO/SnO2 nanorods. For the manufacture of resistive sensor elements, V/Ni contact metallization was applied on top of the samples. The study of the electrophysical characteristics of the ZnO/Au and ZnO/ SnO2 nanorods arrays showed that exposure to UV radiation of different intensity leads to a change in the electrical resistance of the sensor structure, and also affects the time of establishing the readings of the obtained samples.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.229</doi>
          <udk>504.064.3</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>ZnO</keyword>
            <keyword>nanorods</keyword>
            <keyword>electrophysical properties</keyword>
            <keyword>ultraviolet irradiation</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.29/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>152-156</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-3503-7458</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>St. Petersburg Electrotechnical University "LETI"</orgName>
              <surname>Maksimova</surname>
              <initials>Alina A.</initials>
              <email>deer.blackgreen@yandex.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0002-0061-6687</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Uvarov</surname>
              <initials>Alexander</initials>
              <email>lumenlight@mail.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0001-6869-1213</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Vyacheslavova</surname>
              <initials>Ekaterina</initials>
              <email>cate.viacheslavova@yandex.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0002-4894-6503</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Baranov</surname>
              <initials>Artem I.</initials>
              <email>baranov_art@spbau.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0009-0005-9558-4583</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Yarchuk </surname>
              <initials>Ernst</initials>
            </individInfo>
          </author>
          <author num="006">
            <authorCodes>
              <orcid>0000-0002-7632-3194</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Gudovskikh</surname>
              <initials>Alexander</initials>
              <email>gudovskikh@spbau.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Influence of in-situ plasma treatment during PE-ALD of GaN on growth rate and morphology</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this work, the plasma-enhanced atomic layer deposition (PE-ALD) technique, including continuous hydrogen plasma, was studied for GaN growth. Also, the use of plasma at the nitrogen step only as well as argon plasma surface  activation were explored. The structural properties of GaN layers grown on Si substrates at different conditions were studied by atomic force microscopy (AFM). It was shown that in-situ Ar plasma treatment during the PE-ALD process of GaN growth leads to improvement of the surface roughness as well as an increase in growth rate. On the contrary, the use of hydrogen plasma during the process leads to a drastic increase in surface roughness due to  parasitic deposition.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.230</doi>
          <udk>621.315.592</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>gallium nitride</keyword>
            <keyword>plasma treatment</keyword>
            <keyword>atomic layer deposition</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.30/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>157-160</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0009-4548-3724</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Agafonov </surname>
              <initials>Dmitriy </initials>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0001-9319-2475</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Research Institute of Electronic and Mechanical Devices</orgName>
              <surname>Novichkov </surname>
              <initials>Maksim </initials>
              <address>Penza, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Shepeleva</surname>
              <initials>Anastasia</initials>
              <email>eduard.shepelev.67@mail.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0001-9602-7221</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Research Institute of Electronic and Mechanical Devices</orgName>
              <surname>Gurin</surname>
              <initials>Sergey</initials>
              <address>Penza, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0009-0006-3140-5897</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Research Institute of Electronic and Mechanical Devices</orgName>
              <surname>Ryzhov</surname>
              <initials>Alexandr</initials>
              <address>Penza, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>Moscow Institute of Physics and Technology (MIPT)</orgName>
              <surname>Volkov</surname>
              <initials>Valentyn</initials>
              <email>vsv.mipt@gmail.com</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Sensor of fast-variable and static pressure</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">A new design and technological solution has been developed for the sensing element of a static and rapid-change pressure sensor based on the integration of strain-resistant and piezoelectric films of nanometer size, which made it  possible to create a multifunctional sensor element with small pressure deviations from the actual values.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.231</doi>
          <udk>544.478-03</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>sensing element</keyword>
            <keyword>pressure sensor</keyword>
            <keyword>strain gauge</keyword>
            <keyword>piezoelectric thin films</keyword>
            <keyword>static pressure</keyword>
            <keyword>dynamic pressure</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.31/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>161-165</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Frolov </surname>
              <initials>Ilya </initials>
              <email>ilya-frolov88@mail.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Radaev</surname>
              <initials>Oleg </initials>
              <email>oleg.radaev.91@mail.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0003-4854-2813</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Sergeev</surname>
              <initials>Viacheslav</initials>
              <email>sva@ulstu.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Threshold current of separate spectral components of the emission spectrum of InGaN LEDs</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The results of measurements of the threshold current of ultraviolet, blue and green InGaN LEDs on different spectral components of the full emission spectrum are presented. It is shown that the threshold current of long-wave  components of the spectrum is greater than the threshold current of short-wave components. The relative difference in the values of the threshold current of the spectral components of the short-wave and long-wave wings of the emission spectrum at the level of half the radiation power is associated with the inhomogeneous distribution of indium concentration in the quantum well of the InGaN/GaN heterostructure and for the studied ultraviolet LEDs is 2.8%,  4.4% for blue, 25.7% for green.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.232</doi>
          <udk>621.382.088</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>LED</keyword>
            <keyword>InGaN/GaN heterostructure</keyword>
            <keyword>emission spectrum</keyword>
            <keyword>threshold current</keyword>
            <keyword>measurement</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.32/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>166-172</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Provodin</surname>
              <initials>Daniil</initials>
              <email>provodindanya@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Yakusheva</surname>
              <initials>Maria</initials>
              <email>yakusheva.ma@edu.spbstu.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Davydov</surname>
              <initials>Vadim</initials>
              <email>davydov_vadim66@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">A new method of managing the discretization of the scale in a mobile differential refractometer</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The necessity of developing a new method for managing the discretization of the scale in a mobile differential refractometer has been justified. The implementation of this method is necessary to expand the functional capabilities of  the developed mobile differential refractometer (providing a measurement mode of the refractive index of a liquid medium ranging from 1.23 to 2.63 with an error of 0.0001). All existing liquid media and their mixtures worldwide fall  within this measurement range. When using other models of compact and mobile refractometers for express control, such a measurement range of n cannot be provided. Within the range of change of n from 1.23 to 2.63, a new  management method has been implemented, which ensured a measurement error of 0.0001. Studies of various media have been conducted, confirming the adequacy of our development.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.233</doi>
          <udk>535,015</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>refraction</keyword>
            <keyword>liquid</keyword>
            <keyword>refractive index</keyword>
            <keyword>Anderson cuvette</keyword>
            <keyword>laser radiation</keyword>
            <keyword>photodiode array</keyword>
            <keyword>measurement error</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.33/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>173-176</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0001-8930-5438</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Lavrinenko </surname>
              <initials>Valeriy </initials>
              <email>Lavrinenko_valerav@inbox.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Vasilieva</surname>
              <initials>Anastasia</initials>
              <email>anastasiastru@mail.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Parfenov</surname>
              <initials>Vadim</initials>
              <email>vadim_parfenov@mail.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0009-0003-0155-4208</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Novikov </surname>
              <initials>Ivan </initials>
              <email>ianovikov@stud.etu.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Investigation of microfluidic topology formation with the use of IR pulse laser</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The work considers the possibility of creating microfluidic topology elements on a stainless-steel plate using laser processing. The results of multi-stage exposure of near IR laser radiation to a metal surface in order to create  microchannel parts (grooves) with a semicircular profile, as well as through holes that form part of typical microfluidic topologies, are presented. This paper describes the main technological features of the effect of laser radiation on  a metal plate, which affect the effectiveness of creating microtopology elements.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.234</doi>
          <udk>53.06</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>microfluidics</keyword>
            <keyword>microfluidic topology</keyword>
            <keyword>laser processing</keyword>
            <keyword>laser perforation</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.34/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>177-181</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Ivanov</surname>
              <initials>Anton</initials>
              <email>a-e-ivano-v@yandex.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Submicron Heterostructures for Microelectronics Research and Engineering Center of the RAS</orgName>
              <surname>Chernyakov</surname>
              <initials>Anton</initials>
              <email>chernyakov.anton@yandex.ru</email>
              <address>Russia, 194021, St.Petersburg, Polytechnicheskaya, 26</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Talnishnikh</surname>
              <initials>N.A.</initials>
              <email>Nadya.FEL@mail.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0003-4457-8149</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Shabunina </surname>
              <initials>Evgeniia </initials>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Shmidt</surname>
              <initials>Natalia</initials>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Competing processes in nitride alloys in MQWs of LEDs</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The nature of competing processes leading to narrowing and broadening of the electroluminescence spectra width at half maximum under the injection current in nitride LEDs emitting at wavelengths of 270–280 nm and 530–540 nm  has been studied. It was found out that there may be local regions with disturbed stoichiometry of random alloy fluctuations, enriched in excited defects (“deep center + local vibrations”) in nitride MQWs with random alloy fluctuations.  The capture of injected charge carriers by such defects in MQWs located in the space charge region of the pn junction was shown to lead to their coordination rearrangement in the lattice. This also results in a more equilibrium state  of random alloy fluctuations and is accompanied by a narrowing of the full width at half maximum electroluminescence spectrum. However, this mechanism is a source of carrier loss that reduces the external quantum efficiency of  LEDs at the maximum. It was shown experimentally that the higher the level of disorder in random alloy fluctuations, the lower the external quantum efficiency values. The nonequilibrium filling of the lateral random allow fluctuation by  charge carriers in MQWs located outside the space charge region causes the broadening of the full width at half maximum electroluminescence spectrum in LEDs. This mechanism leads to a drop in external quantum efficiency at current densities j &gt; 30 A/cm2.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.235</doi>
          <udk>628.9.038</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>MQW LEDs</keyword>
            <keyword>alloy level disorder</keyword>
            <keyword>FWHM</keyword>
            <keyword>random alloy fluctuation</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.35/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>182-186</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-4894-6503</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Barantsev </surname>
              <initials>Oleg </initials>
              <email>ovbarantsev@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Vasilkova </surname>
              <initials>Elena </initials>
              <email>elenvasilkov@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Pirogov</surname>
              <initials>Evgeny</initials>
              <email>zzzavr@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0003-1835-1629</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Shubina</surname>
              <initials>Kseniia</initials>
              <email>rein.raus.2010@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0002-4894-6503</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Baranov</surname>
              <initials>Artem I.</initials>
              <email>baranov_art@spbau.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>JSC OKB-Planeta</orgName>
              <surname>Voropaev</surname>
              <initials>Kirill</initials>
              <email>kirill.voropaev@novsu.ru</email>
              <address>V. Novgorod, Russian Federation</address>
            </individInfo>
          </author>
          <author num="007">
            <authorCodes>
              <orcid>0009-0009-2615-6795</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Vasil’ev</surname>
              <initials>Andrey</initials>
            </individInfo>
          </author>
          <author num="008">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Karachinsky</surname>
              <initials>Leonid</initials>
              <email>lkarachinsky@itmo.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="009">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Novikov</surname>
              <initials>Innokenty</initials>
              <email>innokenty.novikov@itmo.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="010">
            <authorCodes>
              <orcid>0000-0001-8629-2064</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Sobolev</surname>
              <initials>Maxim</initials>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In0.83Ga0.17As/InP PIN-photodiode heterostructures with different doping levels have been grown by molecular beam epitaxy. Metamorphic buffer layers were applied to prevent misfit dislocations nucleation in active layers.  Capacitance-voltage and current-voltage curves of fabricated photodiodes have been measured and analysed. The impact of various dark current mechanisms has been estimated after the measurements of current-voltage curves  at different temperatures.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.236</doi>
          <udk>621.383.525</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>metamorphic buffer layers</keyword>
            <keyword>infrared photodetectors</keyword>
            <keyword>molecular beam epitaxy</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.36/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>187-191</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Saratov State University</orgName>
              <surname>Kozlowski</surname>
              <initials>Alexander</initials>
              <email>kozlowsky@bk.ru</email>
              <address>Saratov, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0001-6780-9865</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Volkovoynova</surname>
              <initials>Larisa</initials>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0003-3281-8352</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Saratov State University</orgName>
              <surname>Serdobintsev</surname>
              <initials>Alexey</initials>
              <email>alexas80@bk.ru</email>
              <address>Saratov, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Electrical characteristics of semiconductor film structures obtained on a flexible substrate</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In the frame of this work the current-voltage characteristics of thin films of polycrystalline silicon on a flexible polymer substrate were studied, measured when the film was bent in both tension and compression modes. The samples  were fabricated by laser-stimulated metal-induced crystallization of amorphous Si films, deposited by magnetron sputtering on a flexible polyimide film both in constant power and pulsed mode. It has been established that the resistance of a polycrystalline Si film depends on the degree and type of deformation. The change in electrical resistance can be associated with an increase and decrease in the intergranular distance when the film is stretched and  compressed, respectively. The resulting films are promising for the fabrication of semiconductor strain sensors and active elements of flexible electronics.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.237</doi>
          <udk>539.23</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>сrystallization of amorphous silicon</keyword>
            <keyword>metal-induced crystallization</keyword>
            <keyword>laserstimulated crystallization</keyword>
            <keyword>infrared laser radiation</keyword>
            <keyword>flexible electronics</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.37/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>192-195</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0009-7765-2609</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Gribovskaya </surname>
              <initials>Olga </initials>
              <email>fen.tefal2@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Sharkova</surname>
              <initials>Natalia</initials>
              <email>nasharkova@stud.etu.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Vasilieva</surname>
              <initials>Anastasia</initials>
              <email>anastasiastru@mail.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Parfenov</surname>
              <initials>Vadim</initials>
              <email>vadim_parfenov@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">The use of Raman and laser-induced breakdown spectroscopy for the study of iron-containing inks</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The paper presents experimental results of combined use of Raman and laserinduced breakdown spectroscopy (LIBS) for determining elemental composition of ironcontaining inks. It was shown that proposed approach allows to  solve the problem of ironcontaining components identification for paper artifacts.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.238</doi>
          <udk>621.373.826</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>iron gall ink</keyword>
            <keyword>Raman spectroscopy</keyword>
            <keyword>laser-induced breakdown spectroscopy</keyword>
            <keyword>LIBS</keyword>
            <keyword>chemical composition analysis</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.38/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>196-200</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Novosyolov </surname>
              <initials>Artyom</initials>
              <email>sir.nowosiolov@yandex.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Sanatulina </surname>
              <initials>Arina</initials>
              <email>sanatulina.af@phystech.edu</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Moscow Institute of Physics and Technology (National Research University)</orgName>
              <surname>Vershinina</surname>
              <initials>Olesya</initials>
              <email>seraia.ov@phystech.edu</email>
              <address>Dolgoprudny, Moscow region, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Moscow Institute of Physics and Technology (National Research University)</orgName>
              <surname>Lizunova</surname>
              <initials>Anna</initials>
              <email>anna.lizunova@gmail.com</email>
              <address>Dolgoprudny, Moscow region, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0002-3028-947X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Gudkova</surname>
              <initials>Svetlana</initials>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>Moscow Institute of Physics and Technology (National Research University)</orgName>
              <surname>Urazov</surname>
              <initials>Maxim</initials>
              <email>urazov.mn@mipt.ru</email>
              <address>Dolgoprudny, Moscow region, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Сomposition of Al/Zn nanoparticles produced in a gas discharge</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this work, we investigated the size and elemental composition of a binary of aluminum/zinc nanoparticles synthesized in a gas discharge generator. AlxZn1–x nanoparticles were produced in inert atmosphere by simultaneous  erosion of aluminum hole cathode and a zinc anode. Mass fractions of aluminum x were varied from 0.05 to 0.29 by changing the surface area of the aluminum electrode. It was found that the mass fraction of aluminum in binary composition increased 2.6 times when erosion surface of the Al cathode dropped from 188.5 to 37.7 mm2. The average sizes of primary nanoparticles were in the range from 12.8 to 18.6 nm, which formed submicron agglomerates.  Also, when the erosion process occurred in an air atmosphere, we produced zinc aluminate AlZn2O4 with luminescence in ultraviolet (UV) range.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.239</doi>
          <udk>544.032</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>nanoparticles</keyword>
            <keyword>zinc aluminate</keyword>
            <keyword>size measurement</keyword>
            <keyword>gas discharge</keyword>
            <keyword>TEM</keyword>
            <keyword>erosion</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.39/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>201-206</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-8102-3858</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Baranov</surname>
              <initials>Pavel</initials>
              <email>psbaranov@etu.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Parfenov</surname>
              <initials>Vadim</initials>
              <email>vadim_parfenov@mail.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Rongonen</surname>
              <initials>Sofia</initials>
              <email>sofiagonobobleva@mail.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Sokolov </surname>
              <initials>Nikita</initials>
              <email>niksokolov2001@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Identification of unreadable marginalia by means of hyperspectral imaging: case study of the Ostrog Bible from the Library of Russian Academy of Sciences and Russian National Library</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Experiments on visualization of unreadable manuscript marginalia (fading of ink, spreading of ink, crossed out ink, scraping of ink, gluing with restoration materials) of several copies of the Ostrog Bibles from the National Library of  Russia and the Library of Russian Academy of Sciences using hyperspectral imaging have been conducted. The aim of work was to find a way using advanced opto-electronic techniques to read invisible marginalia. In experiments  NIR hyperspectral camera operating in the range 400–1100 nm and original self-developed software were used. Marginalia have been visualized by means of hyperspectral imaging that made possible to recognize badly visible texts  and bring new information for art historians.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.240</doi>
          <udk>621. 397</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>hyperspectral imaging</keyword>
            <keyword>unreadable marginalia</keyword>
            <keyword>Ostrog bible</keyword>
            <keyword>manuscript</keyword>
            <keyword>cultural heritage</keyword>
            <keyword>opto-electronic techniques</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.40/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>207-211</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-6247-9868</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Mastalieva </surname>
              <initials>Viktoriia </initials>
              <email>strindberg76@mail.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Neplokh </surname>
              <initials>Vladimir</initials>
              <email>vneplox@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Aybush</surname>
              <initials>Arseny</initials>
              <email>aiboosh@gmail.com</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Stovpiaga </surname>
              <initials>Ekaterina </initials>
              <email>kattrof@gvg.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Eurov </surname>
              <initials>Daniil </initials>
              <email>edan@mail.ru</email>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Vinnichenko</surname>
              <initials>Maxim</initials>
              <email>mvin@spbstu.ru</email>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Karaulov</surname>
              <initials>Danila</initials>
              <email>karaulov.da@edu.spbstu.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="008">
            <authorCodes>
              <orcid>0000-0002-1571-209X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Kirilenko</surname>
              <initials>Demid</initials>
              <email>demid.kirilenko@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="009">
            <authorCodes>
              <orcid>0000-0003-2956-6561</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Golubev</surname>
              <initials>Valery</initials>
              <email>golubev@gvg.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="010">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Smirnov</surname>
              <initials>Alexander</initials>
              <email>Alex.Smirnov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="011">
            <authorCodes>
              <orcid>0000-0002-9257-6183</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Makarov</surname>
              <initials>Sergey</initials>
              <email>s.makarov@metalab.ifmo.ru</email>
            </individInfo>
          </author>
          <author num="012">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Kurdyukov</surname>
              <initials>Dmitry</initials>
              <email>kurd@gvg.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="013">
            <authorCodes>
              <orcid>0000-0001-9792-045X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Mukhin</surname>
              <initials>Ivan</initials>
              <email>muhin_is@spbstu.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Nonlinear optical phenomena in mesoporous SiO2 and Si/SiO2 nanoparticles</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this work we study the optical response of mesoporous SiO2 and Si/SiO2 nanoparticles considering different fabrication and post-synthesis treatment processes. We show that thermal annealing of mesoporous Si/SiO2  nanoparticles transforms the Si phase from amorphous to crystalline and enhances the second harmonic generation response.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.241</doi>
          <udk>548.75</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>second harmonic generation</keyword>
            <keyword>silicon</keyword>
            <keyword>nanostructures</keyword>
            <keyword>mesoporous nanoparticles</keyword>
            <keyword>IR visualizer</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.41/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>212-216</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Melnichenko</surname>
              <initials>Ivan</initials>
              <email>imelnichenko@hse.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0003-3686-935X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>National Research University “Higher School of Economics” (St. Petersburg branch)</orgName>
              <surname>Moiseev</surname>
              <initials>Eduard</initials>
              <email>emoiseev@hse.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Ivanov</surname>
              <initials>Konstantin </initials>
              <email>kivanov@hse.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Kryzhanovskaya Natalia V.</surname>
              <initials>Natalia</initials>
              <email>nkryzhanovskaya@hse.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Vainilovich</surname>
              <initials>Alexey</initials>
              <email>a.vainilovich@ifanbel.bas-net.by</email>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Nahorny</surname>
              <initials>Aliaksey </initials>
              <email>a.nahorny@ifanbel.bas-net.by</email>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <surname>Lutsenko</surname>
              <initials>Eugeniy</initials>
              <email>e.lutsenko@ifanbel.bas-net.by</email>
            </individInfo>
          </author>
          <author num="008">
            <authorCodes>
              <scopusid>35379962200</scopusid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Ioffe Physical Technical Institute of the Russian Academy of Sciences</orgName>
              <surname>Zhukov</surname>
              <initials>Alexey</initials>
              <email>zhukov@beam.ioffe.ru</email>
              <address>Russia, 194021, St.Petersburg, Polytechnicheskaya 26</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Mode leakage into substrate in microdisk lasers</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The propagation of whispering gallery modes of a quantum-dot injection disk laser into a GaAs substrate has been investigated experimentally and using simulation. For a 50 μm diameter microlaser with 1.5-μm-thick Al0.4Ga0.6As  claddings, the intensity of the mode leaking into the substrate can be up to 10–3 of the intensity of the laser mode in the waveguide.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.242</doi>
          <udk>621.373.826</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>InGaAs quantum well-dots</keyword>
            <keyword>whispering gallery mode microlasers</keyword>
            <keyword>mode leakage</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.42/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>217-220</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Reutov </surname>
              <initials>Aleksei </initials>
              <email>aleksey.reutov@phystech.edu</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Babukhin </surname>
              <initials>Danila </initials>
              <email>dv.babukhin@gmail.com</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Sych</surname>
              <initials>Denis</initials>
              <email>denis.sych@gmail.com</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Convolutional neural networks for image-free classification via single-pixel imaging</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The technology of single-pixel imaging extends visualization capabilities beyond pixel-matrix-based devices. One of possible applications for this technology is fast classification of objects without the need for reconstruction of an  image. The single-pixel camera gathers light statistics and then a computational algorithm – such as a neural network – decides on what is the object been illuminated. We train a convolutional neural network on simulated data from single-pixel camera and demonstrate effectiveness of classification images of handwritten digits.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.243</doi>
          <udk>528.854</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>single-pixel imaging</keyword>
            <keyword>convolutional neural networks</keyword>
            <keyword>image-free classification</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.43/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>221-224</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Kashapov </surname>
              <initials>Artem</initials>
              <email>ar.kashapov@outlook.com</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Bezus</surname>
              <initials>Evgeni </initials>
              <email>evgeni.bezus@gmail.com</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Bykov</surname>
              <initials>Dmitry  </initials>
              <email>bykovd@gmail.com</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Doskolovich</surname>
              <initials>Leonid </initials>
              <email>leonid@ipsiras.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Metal-dielectric resonator integrated in an asymmetric slab waveguide for spatiotemporal optical vortex generation</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">We theoretically and numerically demonstrate an efficient approach for generating a spatiotemporal optical vortex (STOV) in an asymmetric dielectric slab waveguide using a metal-dielectric structure constituted by several metal  strips integrated into the waveguide core layer. The presented rigorous numerical simulation results fully confirm the developed theoretical model.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.244</doi>
          <udk>535</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>spatiotemporal optical vortex</keyword>
            <keyword>integrated optics</keyword>
            <keyword>asymmetric dielectric slab waveguide</keyword>
            <keyword>spatiotemporal differentiation</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.44/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>225-229</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0001-6814-1737</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Zhurba </surname>
              <initials>Danila </initials>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Parfenov</surname>
              <initials>Vadim</initials>
              <email>vadim_parfenov@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">3D laser cleaning as a novel approach to artworks conservation</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Until recently, restoration cleaning has been carried out primarily manually. Manual laser cleaning is a time-consuming process that requires highly skilled restorers. The introduction of automation, which increases the quality and  speed of laser cleaning, will significantly expand its application range and reduce the complexity of restoration work. In this article, we present the results of our experimental work on automated 3D laser cleaning. The proposed  approach allows for precise cleaning of objects of complex geometric shape under the control of a CNC machine. To remove dirt from the surface of such objects, we have developed an original approach based on a combination of  three-dimensional scanning of the object and obtaining a point cloud of the surface to be cleaned, creating a control program for surface cleaning on a CNC machine. The demonstration of the automated cleaning process took place  on corroded steel samples of complex geometric shape. A fiber ytterbium pulsed laser with an average power of 100 W with a wavelength of 1.06 microns and a pulse duration of 100 ns was used for cleaning.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.245</doi>
          <udk>535.211</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>laser cleaning</keyword>
            <keyword>fiber nanosecond laser</keyword>
            <keyword>conservation</keyword>
            <keyword>artworks</keyword>
            <keyword>CNC</keyword>
            <keyword>3D scanner</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.45/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>230-235</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Dedkov </surname>
              <initials>Evgeniy </initials>
              <email>dedkov.ea@phystech.edu</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Shakhovoy</surname>
              <initials>Roman</initials>
              <email>r.shakhovoy@goqrate.com</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Security of BB84-like protocol on coherent states with different intensities</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">There are a large variety of quantum key distribution (QKD) protocols, which can provide unconditional security even with practically possible coherent states instead singlephoton ones. Most of them require equal intensities of  states emitted, which can be achieved only with some precision. However, in some state preparation schemes, for example, in those based on optical injection, equal intensities cannot be achieved without additional elements, which  increases the cost and complexity of QKD setup. In this work we analyze the influence of different state intensities on achievable secret key rate in classical BB84 scheme.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.246</doi>
          <udk>53</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>quantum key distribution</keyword>
            <keyword>BB84</keyword>
            <keyword>coherent pulses with random phases</keyword>
            <keyword>decoy state</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.46/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>236-240</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-3947-8648</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Solomonov</surname>
              <initials>Nikita</initials>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Lebedev</surname>
              <initials>Denis </initials>
              <email>denis.v.lebedev@gmail.com</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0001-8440-494X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Novikova</surname>
              <initials>Kristina</initials>
              <email>novikova_k@spbau.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0001-7521-3754</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University, RAS</orgName>
              <surname>Fedina</surname>
              <initials>Sergey</initials>
              <email>fedina.serg@yandex.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Vaulin </surname>
              <initials>Nikita </initials>
              <email>nikitavaylin@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <authorCodes>
              <orcid>0000-0002-4172-940X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Dvoretckaia </surname>
              <initials>Liliya</initials>
            </individInfo>
          </author>
          <author num="007">
            <authorCodes>
              <orcid>0000-0002-3321-7797</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Arkhipov</surname>
              <initials>Alexander</initials>
              <email>arkhipov@rphf.spbstu.ru</email>
            </individInfo>
          </author>
          <author num="008">
            <individInfo lang="ENG">
              <surname>Golubok</surname>
              <initials>Alexander </initials>
              <email>aogolubok@mail.ru</email>
            </individInfo>
          </author>
          <author num="009">
            <authorCodes>
              <orcid>0000-0001-9792-045X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Mukhin</surname>
              <initials>Ivan</initials>
              <email>muhin_is@spbstu.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Luminescence enhancement in inelastic tunnelling of electrons by changing the geometry of the tunnelling contact</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">We have experimentally investigated the light emission resulting from inelastic electron tunneling in the transition with hemispherical gold nanoantennas (d = 400 nm, h = 300 nm) created by direct fs-laser ablation. We found two  characteristic modes of luminescence: standard - increased signal is observed in the region of nanoantennas at tunneling currents below 2.25 nA and inverted-anomalous, where the gold surface is mainly luminescent, while dark  spots are observed on the antennas on the contrary. In the inverted-anomalous mode we observe record signal values of 5·104 photons per second. We attribute the anomalous effect to the realization of a conditionality for resonant  tunneling of electrons with excitation of optical states.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.247</doi>
          <udk>620.3</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>golden nanoantenna</keyword>
            <keyword>femtosecond laser printing</keyword>
            <keyword>nanoscale on-chip light sourse</keyword>
            <keyword>luminescence from tunnel junction</keyword>
            <keyword>inelastic tunneling of electrons</keyword>
            <keyword>resonant electron tunneling</keyword>
            <keyword>scanning tunneling microscope</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.47/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>241-245</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0001-6494-0147</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Moscow Pedagogical State University</orgName>
              <surname>Shein</surname>
              <initials>Kirill</initials>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Lyubchak </surname>
              <initials>Anastasia </initials>
              <email>anlyubchak@miem.hse.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Zharkova</surname>
              <initials>Ekaterina</initials>
              <email>zharkovaev.sci@gmail.com</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Bandurin</surname>
              <initials>Denis</initials>
              <email>bandurin.d@gmail.com</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Charaev</surname>
              <initials>Ilya</initials>
              <email>ilyacharaev@gmail.com</email>
            </individInfo>
          </author>
          <author num="006">
            <authorCodes>
              <orcid>0000-0003-2560-6503</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>National Research University “Higher School of Economics”</orgName>
              <surname>Gayduchenko</surname>
              <initials>Igor</initials>
              <email>igaiduchenko@hse.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <surname>Goltsman</surname>
              <initials>Grigory </initials>
              <email>goltsman@rplab.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Towards the realization of NbSe2 NIR photodetectors integrated on a silicon nitride waveguide</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Photonic integrated circuits (PIC) represent a promising platform for applications in the field of quantum technologies, such as quantum computing and cryptography. One of the key components for these applications is detectors  based on thin superconducting films. Nevertheless, fabricating thin detectors atop a waveguide utilizing conventional superconducting materials acquired through magnetron sputtering presents a multifaceted and cost-intensive technological challenge. As an alternative approach in this study, we present the concept of an on-chip superconducting detector based on the two-dimensional superconductor NbSe2, obtained through mechanical exfoliation. The  advantage of this approach lies in the ease of device integration onto the waveguide and the possibility to create a detector with a thickness of just one atomic layer. We also demonstrated a method to fabricate thin superconducting nanowires from this material, as the ability to precisely structure the material is crucial for the development of on-chip detectors.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.248</doi>
          <udk>538.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>2D materials</keyword>
            <keyword>PIC</keyword>
            <keyword>superconducting electronics</keyword>
            <keyword>superconductors</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.48/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>246-250</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Astafiev</surname>
              <initials>Oleg</initials>
              <email>O.Astafiev@skoltech.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Shakhov</surname>
              <initials>Aleksander</initials>
              <email>physics2007@yandex.com</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Syrchina </surname>
              <initials>Maria </initials>
              <email>wrongclue@gmail.com</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Nadtochenko</surname>
              <initials>Victor</initials>
              <email>nadtochenko@gmail.com</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Fluorescent cell imaging with femtosecond laser pulses-produced protein nanoaggregates</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">We demonstrated formation of fluorescent products from model protein - bovine serum albumin, induced by femtosecond laser irradiation and characterized optical properties of these products. Laser-modified BSA showed relative  biocompatibility and can be employed for cell imaging.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.249</doi>
          <udk>544.536</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>proteins</keyword>
            <keyword>femtosecond laser pulses</keyword>
            <keyword>nanomaterials</keyword>
            <keyword>fluorescence</keyword>
            <keyword>bioimaging</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.49/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>251-255</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0005-6836-4091</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Mikhaylov </surname>
              <initials>Oleg </initials>
              <email>oleg.mikhaylov.00@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0002-4894-6503</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Baranov</surname>
              <initials>Artem I.</initials>
              <email>baranov_art@spbau.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0002-0061-6687</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Uvarov</surname>
              <initials>Alexander</initials>
              <email>lumenlight@mail.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0002-3503-7458</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>St. Petersburg Electrotechnical University "LETI"</orgName>
              <surname>Maksimova</surname>
              <initials>Alina A.</initials>
              <email>deer.blackgreen@yandex.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0001-6869-1213</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Vyacheslavova</surname>
              <initials>Ekaterina</initials>
              <email>cate.viacheslavova@yandex.ru</email>
            </individInfo>
          </author>
          <author num="006">
            <authorCodes>
              <orcid>0000-0002-7632-3194</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Gudovskikh</surname>
              <initials>Alexander</initials>
              <email>gudovskikh@spbau.ru</email>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <surname>Shvarts</surname>
              <initials>Maxim</initials>
              <email>Shvarts M.Z.</email>
            </individInfo>
          </author>
          <author num="008">
            <authorCodes>
              <orcid>0000-0002-5226-1101</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Terukov</surname>
              <initials>Evgenyi</initials>
              <email>eug.terukov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Degradation of solar heterostructured cells under the influence of electron flow</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this work, we study the effect of irradiation as in low Earth orbits on heterojunction technology structures (p)a-Si:H/(n)c-Si. The samples were irradiated with an electron beam with an energy of 2 MeV and fluences of 3·1013cm–2 to  3·1015cm–2. Solar cells performance deteriorate with increasing of fluence due to decrease of lifetime of charge carriers in bulk silicon. According to DLTS measurements, three defects with activation energies of 0.18 eV, 0.25 eV  and 0.43 eV were detected, and their nature was identified. Further, the concentrations of the found defects were analyzed, during which it became clear that the concentration of defects decreases with increasing depth of the  investigated structure. The correlation between fluence and concentration is also visible. The average values of concentrations vary from 1012 to 1014.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.250</doi>
          <udk>08.1; 08.2; 08.3</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>HJT solar cells</keyword>
            <keyword>DLTS</keyword>
            <keyword>defects</keyword>
            <keyword>concentration</keyword>
            <keyword>absorption cross-section</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.50/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>256-261</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0000-4342-766X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Deng </surname>
              <initials>Yuanbiao</initials>
              <email>dyuanbiao@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Davydov</surname>
              <initials>Vadim</initials>
              <email>davydov_vadim66@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Photovoltaic potential in the Subarctic region</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">With the world’s policy support for solar energy and other renewable energy sources, solar photovoltaic technology has seen rapid development. However, from Saint Petersburg’s perspective, generating solar photovoltaic (PV)  energy in a Subarctic setting is hindered by several challenges, which diminish the enthusiasm for its adoption. Our work demonstrates that St. Petersburg is capable of generating more solar photovoltaic energy in summer than  Central Europe, East and Southeast Asia. This finding could enhance our understanding of the seasonal and annual potential of solar PV energy in Subarctic region.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.251</doi>
          <udk>53.04</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>solar energy</keyword>
            <keyword>climatic</keyword>
            <keyword>Subarctic</keyword>
            <keyword>photovoltaic potential</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.51/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>262-265</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Toikka </surname>
              <initials>Andrei </initials>
              <email>atoikka@obraz.pro</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Kamanina</surname>
              <initials>Natalia</initials>
              <email>nvkamanina@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Surfaces modifications in functional layers for liquid crystal devices</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In the current research, the influence of the single-walled carbon nanotubes (CNTs) on the alignment and anti-reflective properties of the indium-tin oxides (ITO) was considered. The formation of the composite thin films based on  ITO with CNTs was provided by the laseroriented deposition with the CO2 laser. The average electrical strength during the deposition of the CNTs varied in the range of 100–600 V/cm. Morphology of the structures compared via the  surface free energy (SFE) with the Owens-Wendt method. Optical properties of the ITO modifications were compared by the ellipsometry via the Lorentz model using. According to comparison, deposited CNTs provide the reduce of  the polar component of SFE caused by the surface passivation and to rise of the dispersive component of SFE caused by an impact of the Van der Waals forces. Moreover, based on the refractive index comparison, CNTs lead to the  decrease of the reflection losses between ITO and the liquid crystal mesophase. Thus, the transparent contacts based on ITO with CNTs could be considered as the tunable alignment and the antireflection layers of the nematic  liquid crystal devices, so, the architecture of the related devices could be simplified.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.252</doi>
          <udk>535.016</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>liquid crystals</keyword>
            <keyword>alignment</keyword>
            <keyword>indium tin oxides</keyword>
            <keyword>carbon nanotubes</keyword>
            <keyword>laser-oriented deposition</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.52/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>266-270</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Gulyaeva </surname>
              <initials>Irina </initials>
              <email>tenirka@mail.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0003-3725-6053</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Petrov</surname>
              <initials>Viktor</initials>
              <email>vvpetrov@sfedu.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Bayan</surname>
              <initials>Ekaterina</initials>
              <email>ekbayan@sfedu.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Tolstyak</surname>
              <initials>Gleb</initials>
              <email>tolstiak@sfedu.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Surface properties of tin dioxide films containing 7–10% La3+</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this work, morphological, hydrophobic, electrophysical properties and roughness of tin dioxide films containing 7–10% La3+ were investigated by X-ray phase analysis, measuring the edge angle of wettability, atomic force  microscopy and Kelvin-probe force microscopy. The obtained materials were thin films formed by nanocrystallites with dimensions of 23–26 nm and have a homogeneous coating with small height differences. ByX-ray phase analysis  it was found that the films are composite and consist of tetragonal SnO2 (cassiterite) and La2O3 phases. The dependence of the edge angle of wettability on the content of lanthanum ions, substrate material, as well as on the  morphology of the surface and the magnitude of the surface charge was established. It is shown that the 10% La3+–SnO2 film on polycore has the highest hydrophobic properties. Measurements of the surface potential by Kelvin-probe microscopy showed that the average charge on the surface of the film containing 10% La3+ is two times lower than that of the film containing 7% La3+.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.253</doi>
          <udk>546.814-31</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>tin dioxide</keyword>
            <keyword>lanthanum</keyword>
            <keyword>cassiterite</keyword>
            <keyword>hydrophobic properties</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.53/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>271-274</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Isokjanov </surname>
              <initials>Shakhboz </initials>
              <email>isakjanov2997@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0003-3135-2634</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Mazin</surname>
              <initials>Eugeniy</initials>
              <email>mazin.ev@mipt.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0002-2247-9388</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Krivetskiy</surname>
              <initials>Valeriy</initials>
              <email>krivetskii.vv@mipt.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Silicon/graphite nanocomposite for lithium-ion battery anode</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">One of the most promising areas of battery improvement is the use of silicon in anodes. It has emerged as a promising candidate for next-generation lithium-ion batteries (LIBs) due to its tenfold higher capacity compared to  traditional graphite anodes (4200 mAh∙g–1 vs. 372 mAh∙g–1). However, the practical application of silicon in LIBs is hindered by several challenges, including rapid capacity fading, unstable cycling behavior, and significant volume  expansion during lithium insertion/extraction. This work presents a novel approach for fabricating high-performance LIBs with silicon-based anodes and metallic lithium counter electrodes in a compact “Cell-coin 2032” form factor. The silicon-containing anode material was synthesized via the thermal decomposition of SiH4 in a gas phase followed by deposition onto a carbon matrix. A doctor blade technique was employed to deposit the composite onto a copper foil current collector. Laser engraving was utilized to define the electrode topology. The developed technology enables the production of compact, planar LIBs suitable for a wide range of electronics applications.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.254</doi>
          <udk>621.355.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>lithium-ion batteries</keyword>
            <keyword>silicon-carbon anodes</keyword>
            <keyword>composite electrodes</keyword>
            <keyword>laser engraving</keyword>
            <keyword>doctor blade technique</keyword>
            <keyword>coin-type cells</keyword>
            <keyword>solid electrolyte interphase (SEI)</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.54/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>275-278</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Nikitina</surname>
              <initials>Ekaterina </initials>
              <email>mail.nikitina@mail.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0003-1835-1629</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Shubina</surname>
              <initials>Kseniia</initials>
              <email>rein.raus.2010@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0001-8629-2064</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Sobolev</surname>
              <initials>Maxim</initials>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Pirogov</surname>
              <initials>Evgeny</initials>
              <email>zzzavr@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Study of GaPN(As) layers grown by molecular beam epitaxy on silicon substrates</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this work bulk layers of GaPN(As) solid solutions grown by plasma assisted molecular beam epitaxy on gallium phosphide and silicon substrates are studied. The morphology, structural and optical properties of diluted nitride  epilayers synthesized on GaP and Si are compared. The possibility of obtaining GaPN(As) epitaxial layers of optical quality on lattice-mismatched silicon substrates is demonstrated.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.255</doi>
          <udk>621.315.592</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>dilute nitride semiconductors</keyword>
            <keyword>molecular beam epitaxy</keyword>
            <keyword>silicon</keyword>
            <keyword>gallium phosphide</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.55/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>279-282</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0009-4023-6185</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Pozdeev </surname>
              <initials>Vyacheslav </initials>
              <email>pozdeev99va@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0002-0061-6687</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Uvarov</surname>
              <initials>Alexander</initials>
              <email>lumenlight@mail.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0002-7632-3194</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Gudovskikh</surname>
              <initials>Alexander</initials>
              <email>gudovskikh@spbau.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0009-0009-7051-8458</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Monastyrenko</surname>
              <initials>Anatoliy</initials>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Effect of surfactants on surface tension of PEDOT:PSS aqueous solution</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This article examines the effect of surfactant content on the surface tension of a PEDOT:PSS solution to determine the possibility of coating substrates with different values of critical surface tension. One of the disadvantages of  applying PEDOT:PSS coatings from an aqueous solution (e.g. spin-coating) is that water has a relatively high surface tension, which leads to poor wettability of substrates with a low critical surface tension.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.256</doi>
          <udk>532.61.08</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>PEDOT:PSS</keyword>
            <keyword>surface tension</keyword>
            <keyword>conductive polymer</keyword>
            <keyword>surfactants</keyword>
            <keyword>Triton X-100</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.56/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>283-287</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Parshin </surname>
              <initials>Bogdan </initials>
              <email>parshbgal@bmstu.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Bauman Moscow State Technical University</orgName>
              <surname>Makeev</surname>
              <initials>Mstislav</initials>
              <email>m.makeev@bmstu.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0003-0672-4627</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Mikhalev</surname>
              <initials>Pavel</initials>
              <email>pamikhalev@bmstu.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Sviridyuk</surname>
              <initials>Denis</initials>
              <email>sviridyuk@bmstu.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Effect of functional sublayers on the characteristics of deposited diamond-like carbon coatings</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">DLC coatings deposited by the PLD method were investigated using Raman spectroscopy, spectrophotometry and atomic force microscopy. The influence of the material of the functional sublayers used (Ti, Cr) on the structural and  optical characteristics, as well as the surface condition of the deposited DLC coatings, was studied.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.257</doi>
          <udk>539.21</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>diamond-like carbon</keyword>
            <keyword>functional sublayers</keyword>
            <keyword>sp2-hybridization</keyword>
            <keyword>sp3-hybridization</keyword>
            <keyword>atomic force microscopy</keyword>
            <keyword>spectrophotometry</keyword>
            <keyword>Raman spectroscopy</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.57/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>288-291</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0003-1556-7635</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Vodyashkin </surname>
              <initials>Andrey</initials>
              <email>av.andrey2013@yandex.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0003-0672-4627</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Mikhalev</surname>
              <initials>Pavel</initials>
              <email>pamikhalev@bmstu.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Bauman Moscow State Technical University</orgName>
              <surname>Makeev</surname>
              <initials>Mstislav</initials>
              <email>m.makeev@bmstu.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Green synthesis of titanium dioxide nanoparticles suitable for creating PVDF-TiO2 composite films</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This work presents a green method for producing titanium dioxide nanoparticles. The resulting nanoparticles were characterized using DLS, XRD, FTIR. The resulting nanoparticles consist of an anatase phase with small impurities of  brookite and an amorphous phase associated with organic substances of the extract. Titanium nanoparticles exhibit high colloidal stability induced by rosehip extract. Due to their high colloidal stability, the nanoparticles proposed in this work are a promising resistor as one of the components for tuning the properties of hybrid materials in the PVDF matrix.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.258</doi>
          <udk>544.774.4</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>nanoparticles</keyword>
            <keyword>TiO2</keyword>
            <keyword>PVDF</keyword>
            <keyword>composite materials</keyword>
            <keyword>dynamic light scattering</keyword>
            <keyword>green synthesis</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.58/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>292-296</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Zaichenko</surname>
              <initials>Kirill</initials>
              <email>kvz235@mail.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Afanasenko</surname>
              <initials>Arseniy</initials>
              <email>ar.afanasenko@gmail.com</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Denisova </surname>
              <initials>Elena</initials>
              <email>Tiranderel@yandex.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Kordyukova</surname>
              <initials>Anna</initials>
              <email>annygm00@mail.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Sevakov</surname>
              <initials>Daniil</initials>
              <email>sevakovdaniil@gmail.com</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Utilizing the convolutional neural network AlexNet to classify ultra-high resolution electrocardiosignals</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Coronary heart disease is one of the main causes of death in humans. Despite this, modern electrocardiography (ECG) methods are limited in obtaining complete information about the progression of pathology due to insufficient  throughput. To eliminate this limitation, a new approach known as ultra-high resolution electrocardiography (UHR ECG) is being developed to detect abnormal changes in the cardiovascular system in areas of electrocardiosignal processing (ECS), which are usually perceived as artifacts. However, the expansion of the amplitude and frequency range complicates the task of analyzing the data obtained, since many traditional ECS analysis methods are  ineffective when applied to UHR ECG. This study demonstrates the effectiveness of using the fifteen-layer convolutional neural network (CNN) AlexNet to solve the problem of classifying ECS obtained using the UHR ECS  methodology. An extensive data set of labeled ECG recordings obtained using the UHR ECG method on Vistar series experimental rats during experiments on modeling acute myocardial ischemia was used to train and evaluate the  quality of predictions of the CNN model.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.259</doi>
          <udk>004.622</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>ultra-high resolution electrocardiography</keyword>
            <keyword>convolutional neural network</keyword>
            <keyword>classify</keyword>
            <keyword>AlexNet</keyword>
            <keyword>ischemia</keyword>
            <keyword>electrocardiosignal</keyword>
            <keyword>coronary heart disease</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.59/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>297-300</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Sidorov </surname>
              <initials>Evgeniy </initials>
              <email>siea.18@uni-dubna.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Gribova</surname>
              <initials>Elena</initials>
              <email>elena_g67@mail.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Gladyshev</surname>
              <initials>Pavel</initials>
              <email>pglad@yandex.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Fluorescent properties of boron nitride quantum dots depending on functionalizing ligands</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Boron nitride quantum dots (BNQDs) are promising agents for boron neutron capture therapy. However, studies of the dependence of optical properties on the conditions of their synthesis are at an early stage. In this work, a study  was carried out of the effect of BNQDs functionalization with urea, thiourea, and o-phenylenediamine on their fluorescent properties. It is shown that when N-methyl-2-pyrrolidone is used as a solvent for the synthesis of BNQDs by  exfoliation of bulk boron nitride powder followed by solvothermal treatment with the addition of various amino-containing ligands, it is possible to tune the fluorescence of boron nitride quantum dots from 404 to 545 nm.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.260</doi>
          <udk>54.057, 544.164, 544.174.2</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>quantum dots</keyword>
            <keyword>boron nitride</keyword>
            <keyword>photoluminescence</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.60/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>301-305</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0001-8296-6172</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Dushina </surname>
              <initials>Anastasiya </initials>
              <email>dushina02@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0002-0332-1235</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Moscow Pedagogical State University</orgName>
              <surname>Stepanov </surname>
              <initials>Maxim </initials>
              <email>stepanov_me@mail.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0001-9305-067X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Arzhanov</surname>
              <initials>Artem</initials>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Khaydukov</surname>
              <initials>Evgenii</initials>
              <email>khaydukov@mail.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0001-9646-1693</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>M.M. Shemyakin and Yu.A. Ovchinnikov Institute of bioorganic chemistry of the RAS</orgName>
              <surname>Generalova</surname>
              <initials>Alla</initials>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Conditions of AgNPs/flavin mononucleotide complex formation as a tool to tune optical properties of this complex</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Recently, photodynamic therapy has been considered as one of the promising alternatives to classical antimicrobial therapy based on antibiotics, which has become less effective due to bacterial resistance. Flavin mononucleotide  (FMN), a vitamin B2 derivative, is a biocompatible, affordable drug with attractive photodynamic properties, including the generation of reactive oxygen species (ROS) that can target and disrupt bacteria. The integration of silver  nanoparticles, known for their antibacterial properties, could affect photochemical processes and potentially enhance the antimicrobial effectiveness of FMN. This study shows the results of an investigation into the conditions for the  formation of a complex between silver nanoparticles and FMN, as well as the influence of nano-sized silver on the photodegradation of FMN under light irradiation. This work presents the development of a method aimed at preparation of FMN-silver nanoparticles complex. The influence of silver nanoparticles on the fluorescent properties of FMN and the dynamics of its photodegradation was evaluated.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.261</doi>
          <udk>620.3</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>flavin mononucleotide</keyword>
            <keyword>silver nanoparticles</keyword>
            <keyword>photodegradation</keyword>
            <keyword>optical properties</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.61/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>306-310</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0004-4610-4523</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Suchkov </surname>
              <initials>Maksim</initials>
              <email>max.suchkov3001@yandex.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Kuzyaeva </surname>
              <initials>Valeriia </initials>
              <email>kuzyaeva.valeriya@mail.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Sergeev</surname>
              <initials>Igor</initials>
              <email>sergeev@yandex.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Babayeva</surname>
              <initials>Gulyalek</initials>
              <email>babaevagulyalek@gmail.com</email>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0001-6349-2979</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Moscow Pedagogical State University</orgName>
              <surname>Demina</surname>
              <initials>Polina</initials>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Sochilina</surname>
              <initials>Anastasia</initials>
              <email>ddraig@yandex.ru</email>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <surname>Akasov</surname>
              <initials>Roman</initials>
              <email>roman.akasov@gmail.com</email>
            </individInfo>
          </author>
          <author num="008">
            <individInfo lang="ENG">
              <surname>Egorova</surname>
              <initials>Tatiyana</initials>
              <email>tv.egorova@mpgu.su</email>
            </individInfo>
          </author>
          <author num="009">
            <individInfo lang="ENG">
              <surname>Khaydukov</surname>
              <initials>Evgenii</initials>
              <email>khaydukov@mail.ru</email>
            </individInfo>
          </author>
          <author num="010">
            <authorCodes>
              <orcid>0000-0001-9646-1693</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>M.M. Shemyakin and Yu.A. Ovchinnikov Institute of bioorganic chemistry of the RAS</orgName>
              <surname>Generalova</surname>
              <initials>Alla</initials>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Modified natural polymers with bioactive additives for restoration of critical bone defect</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">A critical bone defect (CBD) is a bone tissue injury that is unable to self-heal and therefore requires tissue engineering approaches. Photocrosslinkable hydrogels based on natural polymers are promising biomaterials for CBD  restoration due to their biocompatibility, versatility, and ability to form 3D structures of defined shapes. In this study, UV-photocrosslinkable materials based on hyaluronic acid modified with glycidyl methacrylate were proposed for the formation of hydrogels, which can be used for in situ replacement of CBD. It was demonstrated that the obtained hydrogels possess mechanical properties suitable for bone tissue replacement, and the photopolymerization process  occurs under mild conditions, ensuring the high viability of mouse mesenchymal stem cells in such hydrogels. The developed technology may be suggested or further investigation of its potential for CBD replacement in vivo conditions.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.262</doi>
          <udk>577.35</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>critical bone defect</keyword>
            <keyword>hydrogel scaffolds</keyword>
            <keyword>biocompatible natural polymers</keyword>
            <keyword>hyaluronic acid</keyword>
            <keyword>glycidyl methacrylate</keyword>
            <keyword>in situ photocrosslinking</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.62/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>311-315</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-0332-1235</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Moscow Pedagogical State University</orgName>
              <surname>Stepanov </surname>
              <initials>Maxim </initials>
              <email>stepanov_me@mail.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0003-3899-3928</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Vlasov</surname>
              <initials>Alexander</initials>
              <email>vlasov.sasha2015@yandex.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0001-6349-2979</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Moscow Pedagogical State University</orgName>
              <surname>Demina</surname>
              <initials>Polina</initials>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Akasov</surname>
              <initials>Roman</initials>
              <email>roman.akasov@gmail.com</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Babayeva</surname>
              <initials>Gulyalek</initials>
              <email>babaevagulyalek@gmail.com</email>
            </individInfo>
          </author>
          <author num="006">
            <authorCodes>
              <orcid>0000-0001-9646-1693</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>M.M. Shemyakin and Yu.A. Ovchinnikov Institute of bioorganic chemistry of the RAS</orgName>
              <surname>Generalova</surname>
              <initials>Alla</initials>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <surname>Khaydukov</surname>
              <initials>Evgenii</initials>
              <email>khaydukov@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Intravital microscopy: dorsal skinfold chamber model</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Intravital microscopy (IVM) is a great tool to investigate multicellular living organism in all of its natural complexity. It combines precision of light microscopy with an ability to observe physiological processes in real-time of traditional  magnetic resonance/computed tomography imaging. In this work we demonstrate effectiveness of self-engineered dorsal skinfold chamber IVM model on examples of brightfield microscopy with passive spectral filtration to study vasculature in mice.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.263</doi>
          <udk>612.1.8</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>IVM</keyword>
            <keyword>DSC</keyword>
            <keyword>bioimaging</keyword>
            <keyword>microcirculation</keyword>
            <keyword>vasculature</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.63/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>316-320</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Kharlamova </surname>
              <initials>Anastasya </initials>
              <email>kharlamova.anastasya2015@yandex.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Scattering of ultrashort laser pulses on pseudoknots RNA</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The paper theoretically models the scattering spectra of ultrashort laser pulses on an RNA pseudonode and considers the possibility of using the obtained data in genome analysis. Several configurations of pseudo-RNA nodes were  selected as a sample for theoretical modeling of the interaction of a laser pulse with matter: a hairpin, a double loop, and a spiral junction. The study of such structures is interesting for the analysis of the DNA genome, as well as for  the study of functions such as viral replication, RNA splicing and RNA editing. At the moment, the study of such structural features is difficult, existing methods cannot give an accurate result, especially on long sections of the  molecule. In this paper, the interaction of an ultrashort laser pulse with a molecule of four variants is theoretically modeled, when the RNA does not have a pseudonode and when there are hairpins and loops in the structure. The  results obtained show the expediency of using laser pulses as a method for determining such structures.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.264</doi>
          <udk>539.192</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>ultrashort laser pulses</keyword>
            <keyword>scattering spectrum</keyword>
            <keyword>pseudoknots</keyword>
            <keyword>DNA</keyword>
            <keyword>RNA</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.64/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>321-325</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Vakorina</surname>
              <initials>Daria</initials>
              <email>cementary.ley@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Stepanenkov </surname>
              <initials>Gregory </initials>
              <email>261199g@gmail.com</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Express kidney monitoring method for early detection of kidney damage</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">A new method for monitoring the state of urine has been developed, which allows to determine the density ρm, osmolarity Os and the size of protein compounds Db in real time with high accuracy. Modernization of the mobile  refractometer design to implement this method to provide measurement of biological solution sample parameters with a single instrument. Providing ease of operation and maintenance, high accuracy of measurements, application  without pre-calibration of the scale after each switching on. The results of determination of density, osmolarity, size of protein compounds and total number of solid particles by measured refractive indices n at different wavelengths were compared with the results of measurements on other devices and confirmed the reliability of the developed method. The parameters of human urine, by which it is possible to establish kidney disease at an early stage with high  probability, were determined.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.265</doi>
          <udk>53.082.539</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>refraction</keyword>
            <keyword>express method</keyword>
            <keyword>refractive index</keyword>
            <keyword>laser radiation</keyword>
            <keyword>wavelength</keyword>
            <keyword>urine</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.65/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>326-330</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Dmitrieva </surname>
              <initials>Diana </initials>
              <email>dmitrievadiana1405@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0009-0005-8032-1561</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Dmitrieva</surname>
              <initials>Diana</initials>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Development of a new methodology for the control of tritium emissions into the atmosphere and assessment of their impact on biological objects</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The necessity of research of tritium content in emissions produced by nuclear power plants is sustained. The imperfection of the classical method for the determination of tritium in a sample by the presence of β-radiation in the  research of water, soil and products is determined. The methodology of measurements is presented. To realize the proposed method, measurements of radiation power from three types of particles (α, β and γ) are carried out.  Repeated measurements are carried out at a small distance from the sample at a more distant distance the exposure dose from γ-radiation was measured. The results of the research of tritium impact on the population in the  Leningrad Region (Russian Federation), which lives in areas up to 50–60 km away from the Leningrad Nuclear Power Plant, are presented. Annual emissions and volumetric activity in air of tritium at the Leningrad Nuclear Power  Plant are presented. Data on annual radiation dose from tritium emissions are given. Negative consequences of tritium influence on human organism are highlighted. The drawbacks of the existing monitoring system are identified.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.266</doi>
          <udk>539.1.047</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>methodology</keyword>
            <keyword>tritium emissions</keyword>
            <keyword>γ-radiation</keyword>
            <keyword>tritium impact</keyword>
            <keyword>control system</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.66/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>331-335</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Fedotova </surname>
              <initials>Elisaveta </initials>
              <email>st077318@student.spbu.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Paston</surname>
              <initials>Sofia</initials>
              <email>svpaston@list.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Structure of bovine serum albumin in solution and films as revealed from vibrational spectroscopy</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This study explores the impact of salt concentration and the degree of hydration on the structure of bovine serum albumin (BSA) using vibrational spectroscopy methods, specifically Fourier transform infrared spectroscopy and  Raman scattering. BSA, a key plasma protein, plays essential roles in binding and transporting various molecules in the bloodstream. The research focuses on understanding how do the interaction with ions and water molecules  affect the secondary and tertiary structure of globular proteins, emphasizing the significance of environmental factors in protein conformation. The results indicate distinct responses in the vibrational spectra of BSA to the presence  of salt. Analysing the Amide I band give the parameters of the secondary structure of BSA. In all systems investigated the values obtained is in good correspondence with the data for native BSA, but the secondary and tertiary BSA  structure in dehydrated films containing NaCl is closer to native, hence ions prevent albumin from denaturation and β-aggregation.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.267</doi>
          <udk>577.322</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>bovine serum albumin</keyword>
            <keyword>protein film</keyword>
            <keyword>Raman spectroscopy</keyword>
            <keyword>FTIR spectroscopy</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.67/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>336-339</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Shram </surname>
              <initials>Polina</initials>
              <email>p.schram2002@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Kolchenko</surname>
              <initials>Anna</initials>
              <email>anya.kolchenko@gmail.com</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Akasov</surname>
              <initials>Roman</initials>
              <email>roman.akasov@gmail.com</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Vinokurov</surname>
              <initials>Ivan</initials>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Egorova</surname>
              <initials>Tatiyana</initials>
              <email>tv.egorova@mpgu.su</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Antibacterial properties of riboflavin under photodynamic exposure in a culture of fluorescent bacteria E. Coli</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Nosocomial infections are a dangerous complication of various surgical procedures or injuries because the pathogens causing them are resistant to antibiotic therapy. Antibacterial photodynamic therapy (aPDT), which is based on  the suppression of the growth of pathogenic microorganisms by means of free radicals and reactive oxygen species generated by the irradiation of substances with photosensitising activity, can be an effective method for the  treatment of nosocomial infections. In this work, we have shown that the endogenous photosensitiser riboflavin, which has low dark toxicity, good water solubility and high quantum yield, can be used as an agent for aPDT. To this end,  we investigated the antibacterial activity of riboflavin against E.Coli bacteria transformed with the mKate protein using blue and near-ultraviolet light sources in different irradiation modes. It was shown that half-maximal inhibition of bacterial growth could be achieved at concentrations of 0.1–0.5 mg/ml riboflavin when irradiated at a wavelength of 365 nm and at 0.6–1.2 mg/ml when irradiated at a wavelength of 450 nm, 10–20 minutes of irradiation. The  proposed approach may be promising for the treatment of nosocomial infections, including those resistant to antibiotics.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.268</doi>
          <udk>57.083</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>antimicrobial photodynamic therapy</keyword>
            <keyword>photosensitizer</keyword>
            <keyword>riboflavin</keyword>
            <keyword>antibiotic resistance</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.68/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>340-344</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Burtsev </surname>
              <initials>Vladimir</initials>
              <email>burtsev.vd@phystech.edu</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Nikulin</surname>
              <initials>Anton</initials>
              <email>nikulin.av@mipt.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Vosheva</surname>
              <initials>Tatyana</initials>
              <email>Vosheva.ts@mipt.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Nazarov</surname>
              <initials>Natanil</initials>
              <email>nazarov.nm@mipt.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Filonov</surname>
              <initials>Dmitry</initials>
              <email>dimfilonov@gmail.com</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Möbius strip inspired design of a multiband dipole-like circularly polarized antenna</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This paper describes the design of a multi-band antenna with a dipole-like radiation pattern with circular polarization inspired by the Möbius strip. The results obtained can be applied further in telecommunication technologies, for  example, in the development of satellite multiple access systems with frequency division of channels.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.269</doi>
          <udk>537.862</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Möbius strip</keyword>
            <keyword>antenna design</keyword>
            <keyword>multipolar decomposition</keyword>
            <keyword>satellite communications systems</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.69/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>345-348</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Nikulin</surname>
              <initials>Anton</initials>
              <email>nikulin.av@mipt.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Burtsev </surname>
              <initials>Vladimir</initials>
              <email>burtsev.vd@phystech.edu</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Antoshkin</surname>
              <initials>German</initials>
              <email>antoshkin.gv@mipt.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Prokhorov</surname>
              <initials>Sergey </initials>
              <email>prokhorov.sy@roscosmos.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Vosheva</surname>
              <initials>Tatyana</initials>
              <email>Vosheva.ts@mipt.ru</email>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Nazarov</surname>
              <initials>Natanil</initials>
              <email>nazarov.nm@mipt.ru</email>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <surname>Kosmynin</surname>
              <initials>Alexey</initials>
              <email>alekseykosmynin@matrixwave.tech</email>
            </individInfo>
          </author>
          <author num="008">
            <individInfo lang="ENG">
              <surname>Filonov</surname>
              <initials>Dmitry</initials>
              <email>dimfilonov@gmail.com</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Development of a Ku-band phased array antenna for satellite communication</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This study explores the development of phased array antennas for satellite communications in the Ku-band. The design approach focused on patch antennas with directors, utilizing circular polarization for effective beam steering. This study provides insights into the design and performance of phased array antennas, offering a solid foundation for further exploration and development in satellite communication technologies.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.270</doi>
          <udk>537.86</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>phased array</keyword>
            <keyword>Ku-band</keyword>
            <keyword>electronic beam scanning</keyword>
            <keyword>electromagnetic simulations</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.70/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>349-353</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Sedov</surname>
              <initials>Artem</initials>
              <email>sedov.ap@mipt.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Burtsev </surname>
              <initials>Vladimir</initials>
              <email>burtsev.vd@phystech.edu</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Nikulin</surname>
              <initials>Anton</initials>
              <email>nikulin.av@mipt.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Khudykin</surname>
              <initials>Anton</initials>
              <email>khudykin.aa@mipt.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Vosheva</surname>
              <initials>Tatyana</initials>
              <email>Vosheva.ts@mipt.ru</email>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Filonov</surname>
              <initials>Dmitry</initials>
              <email>dimfilonov@gmail.com</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Surface roughness modeling for extremely high frequency applications</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this work, we show electromagnetic simulations of surface roughness in multiple conventional antennas applicable for 6G networks potentially operating in the W-band (75–110 GHz). Operations at such high frequencies require  fine accuracy of surface processing that becomes to the order of the wavelength. We show simulations of the surface roughness of four devices, such as a horn antenna, a patch antenna, a rectangular waveguide, and a microstrip  transmission line. Finally, we simulated S-parameters and conducted statistical analysis to define the requirements of surface processing.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.271</doi>
          <udk>537.86</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>extremely high frequency</keyword>
            <keyword>surface roughness</keyword>
            <keyword>electromagnetic simulations</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.71/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>354-359</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0009-0003-7927-2171</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Kozhukhovsky </surname>
              <initials>Alexey </initials>
              <email>akozhukhovsky@icloud.com</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Seliverstov </surname>
              <initials>Sergey </initials>
              <email>seliverstovsv@mail.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Svyatodukh</surname>
              <initials>Sergey</initials>
              <email>sergey.svetodux@gmail.com</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Goltsman</surname>
              <initials>Grigory </initials>
              <email>goltsman@rplab.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Terahertz integrated H-plane bend: simulation and experimental investigation</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The usefulness of using terahertz radiation has been proven in practice. Recently we have studied how to manufacture and use silicon waveguides and obtained insignificant signal loss. Final purpose is creating the integrated  photonic circuit which needs not only straight waveguide sections, which we have done before, but bend structures with minimal signal loss, which we present in this paper. The insertion loss of the structure we made is ~0.178 dB ±  0.081 dB at frequency of 145.5 GHz. This result is simulated and experimentally verified. This once again proves that it is possible to create a full-fledged design that has a lot of practical applications. It is a future of communication  systems, medicine and artificial intelligence development. Eventually we will be able to create a physical structure that will be a hardware implementation of an artificial neural network with extremely low power consumption.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.272</doi>
          <udk>537.876.4</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>terahertz photonics</keyword>
            <keyword>waveguide</keyword>
            <keyword>photonic integrated circuit</keyword>
            <keyword>H-plane bend</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.72/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>360-363</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Rozenblit </surname>
              <initials>Alina </initials>
              <email>alina.rozenblit@metalab.ifmo.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0002-3337-395X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Kurganov</surname>
              <initials>Georgiy</initials>
              <email>georgiy.kurganov@metalab.ifmo.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0003-4930-1552</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Zhirihin</surname>
              <initials>Dmitry</initials>
              <email>d.zhirihin@metalab.ifmo.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Olekhno </surname>
              <initials>Nikita </initials>
              <email>nikita.olekhno@metalab.ifmo.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Edge states supported by two-dimensional square-lattice arrays of bianisotropic dielectric resonators</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Robust wave propagation along the boundaries of two-dimensional structures at frequencies of bulk bandgap is the subject of active study and is typically related to topological properties. Here, we propose a new model of two-dimensional (2D) structure which is composed of centimeter-scale bianisotropic dielectric resonators placed in the nodes of a square lattice and supports edge states at microwave frequencies. As we demonstrate, bianisotropy  introduced by breaking a geometrical symmetry of cylindrical resonators is essential for the bandgap opening. The simulation results for a finite structure demonstrate the emergence of in-gap edge states at the interface between  the domains with oppositely oriented bianisotropic resonators. We numerically demonstrate spin-momentum locking for these modes, and, moreover, the emergence of such edge states at the boundary between the structure and  free space, which is unusual for photonic topological insulators. The resilience of the observed states is confirmed by studying the system with double-bend interface and geometrical imperfections.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.273</doi>
          <udk>535.3</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>edge states</keyword>
            <keyword>bianisotropy</keyword>
            <keyword>dielectric resonators</keyword>
            <keyword>radiophysics</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.73/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>364-367</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-4635-0044</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Morozov</surname>
              <initials>Mikhail</initials>
              <email>mikhail.yu.morozov@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0002-0724-6391</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Mashinsky </surname>
              <initials>Konstantin </initials>
              <email>konstantin-m92@yandex.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0003-1303-6443</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <surname>Popov</surname>
              <initials>Vyacheslav</initials>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Terahertz amplification and lasing in a metal groove with population inverted graphene</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Terahertz amplification and lasing regimes in a metal groove with population inverted (active) graphene are studied theoretically. Terahertz lasing arises in the regime of simultaneous excitation of two Fabry–Perot resonances across  the graphene substrate thickness and across the groove width in vicinity of the cut-off frequency of the operational TE mode of the metal groove.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.274</doi>
          <udk>621.373.826</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>amplification</keyword>
            <keyword>lasing</keyword>
            <keyword>terahertz wave</keyword>
            <keyword>graphene</keyword>
            <keyword>inverted graphene</keyword>
            <keyword>groove</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.74/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>368-372</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Isupova </surname>
              <initials>Ekaterina </initials>
              <email>isupova.e24@mail.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Valov</surname>
              <initials>Anton </initials>
              <email>tony.valov2015@yandex.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">System of the temperature controller for the rubidium frequency standard</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The article discusses the task of improving the thermal stability of a device used in a rubidium frequency standard. It considers the entire standard and its gas cell, justifying the need for thermal stabilization. To combat temperature  instability, which can negatively affect optical elements in the device, a new thermal stabilization system for the gas cell of a quantum frequency standard was developed. Laboratory tests of the quantum discriminator in a thermal  chamber showed excellent performance, with a resistance change of the thermistor in the bridge being 2 times lower than in the previous circuit. The use of an instrumentational amplifier, which reduces the error signal in the bridge,  and a PID (proportional-integral-derivative) controller, which corrects transients and provides stable and accurate regulation, while protecting the circuit from overshoots, have been proven effective. With the help of thermal  stabilization, the short- and long-term stability of frequency and time standards can be further enhanced, which will positively affect the synchronization of time scales in satellite navigation systems.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.173.275</doi>
          <udk>53.06</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Rubidium frequency standard</keyword>
            <keyword>gas cell</keyword>
            <keyword>optical pumping</keyword>
            <keyword>temperature control</keyword>
            <keyword>proportional-integral-differential regulator</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2024.76.75/</furl>
          <file/>
        </files>
      </article>
    </articles>
  </issue>
</journal>
