2304-9782, 2618-8686, 2405-7223 St. Petersburg Polytechnic University Journal: Physics and Mathematics 16 3.1 2023 1-479
CNF RUS 10-15 Voronezh State University of Engineering Technology Kim Kseniya kmkseniya@yandex.ru
Voronezh, Russian Federation
 Voronezh State University of Engineering Technology Niftaliev Sabukhi sabukhi@gmail.com
Voronezh, Russian Federation
 Voronezh State University of Engineering Technology Kotov Gennady giktv@mail.ru
Voronezh, Russian Federation
 Voronezh State University of Engineering Technology Lenshin Alexander lenshinas@mail.ru
Voronezh, Russian Federation
 The features in the formation of oxide porous structures based on SiO2–SnOх Substrates of the present gas-sensible sensors are fabricated from the porous silicon characterized by a high specific surface. In order to increase stability of the operation and enhance selectivity of these sensors their surface can be covered with metal-containing films. In this work the film of tin oxide was deposited on the surface of porous silicon; this films is characterized by certain advantages such as a wide band gap, low price, high sensibility and in-toxicity of the material. Porous silicon was obtained by electrochemical anodizing of single-crystalline silicon (grade KEF (100)). Porous silicon samples werethen coated with the films of tin oxide applying thermal evaporation in vacuum. When metal-oxide film was deposited on porous silicon its surface became more textured and in addition formation of the great amount of nano-scale granules could be observed. Optical properties of the samples were studied by UV-spectroscopy. The presence of the oxidized tin was found on the surface of porous silicon in the form of SnO. It was shown that thermal deposition of tin on the surface of porous silicon resulted in the change of position and shape of the photoluminescence band. Results presented in the work demonstrated that thermal evaporation in vacuum can be successfully applied for obtaining of the tin oxide films on porous silicon. The elaborated nanocomposites can be used for the fabrication of sensors for gas detection. 10.18721/JPM.163.101 546.3-126:544.2 porous silicon tin oxide thermal evaporation in vacuum photoluminescence https://physmath.spbstu.ru/article/2023.68.1/
CNF RUS 16-20 M.N. Mikheev Institute of Metal Physics, UB RAS Chistyakov Vasiliy wchist@imp.uran.ru
Ekaterinburg, Russian Federation
 M.N. Mikheev Institute of Metal Physics, UB RAS Perevalova Aleksandra domozhirova@imp.uran.ru
Ekaterinburg, Russian Federation
 M.N. Mikheev Institute of Metal Physics; Ural Federal University Fominykh Bogdan fominykh@imp.uran.ru
Ekaterinburg, Russian Federation
 National Cheng Kung University Huang J. C. A. jcahuang@mail.ncku.edu.tw
Tainan, Taiwan
 M.N. Mikheev Institute of Metal Physics; Ural Federal University Marchenkov Vyacheslav
Ekaterinburg, Russian Federation
 Hall Effect in “size” topological insulators Bi2Se3 The Hall resistance ρxy of thin films of the Bi2Se3 topological insulator with a thickness from 10 nm to 75 nm at a temperature of 4.2 K and in magnetic fields up to 10 T has been measured. The size effect was found, i.e. dependence of the Hall resistance and the Hall coefficient on the thickness of the studied films. Using a single-band model, the values of the current carrier concentration and their mobility are calculated, which also change with a change in the thickness of the samples. 10.18721/JPM.163.102 669.765:537.312.6 topological insulators size effect Hall Effect thin films https://physmath.spbstu.ru/article/2023.68.2/
CNF RUS 21-25 Smirnova Maria masha_19957@mail.ru Bachurin Vladimir vibachurin@mail.ru P.G. Demidov Yaroslavl State University Pukhov Denis puhov2005@ya.ru
Yaroslavl, Russian Federation
 Mazaletsky Leonid boolvinkl@ya.ru P.G. Demidov Yaroslavl State University Lebedev Michael m.e.lebedev@ya.ru
Yaroslavl, Russian Federation
 Churilov Anatoly abchurilov@mail.ru Development of the surface morphology of germanium upon irradiation with gallium ions Experimental studies of the germanium surface morphology development under irradiation with a focused gallium ion beam at different angles of incidence and fluences are presented. It is shown that a nanoporous structure formes in the near-surface layer starting with a dose of 5·1015 cm‒2.This leads to the formation of a sponge-like morphology with a wall thickness of about 20 nm and a depth up to 150 nm with an increasing dose. Changing the ion beam incidence angle with respect to the surface normal leads to a tilt of the pores walls in the collinear direction. 10.18721/JPM.163.103 537.534 semiconductor Ge ion irradiation surface morphology pores sponge-like relief angle dependence dose dependence https://physmath.spbstu.ru/article/2023.68.3/
CNF RUS 26-30 0000-0001-7499-0578 Institute of High Current Electronics, Siberian Branch of RAS Kozhevnikov Vasily Vasily.Y.Kozhevnikov@ieee.org Institute of High Current Electronics, Siberian Branch, RAS Oskirko Vladimir oskirkovo@gmail.com
Tomsk, Russian Federation
 Institute of High Current Electronics, Siberian Branch, RAS Rabotkin Sergey rabotkin@yandex.ru
Tomsk, Russian Federation
 Institute of High Current Electronics, Siberian Branch, RAS Pavlov Artem apel4pap@gmail.com
Tomsk, Russian Federation
 Institute of High Current Electronics, Siberian Branch, RAS Semenov Vyacheslav semenofvjacheslav@gmail.com
Tomsk, Russian Federation
 Soloviev Andrei asus_work@mail.ru Institute of High Current Electronics, Siberian Branch, RAS Grenadyorov Alexander 1711sasha@mail.ru
Tomsk, Russian Federation
 Institute of High Current Electronics, Siberian Branch, RAS Zakharov Alexander zare17@yandex.ru
Tomsk, Russian Federation
 Novel methods for synthesizing high-quality thin films through short and ultrashort high-power pulsed magnetron sputtering The present study focuses on investigating the increase in average ion current density to the substrate in short and ultra-short high-power impulse magnetron sputtering (HiPIMS). Theoretical and experimental evidence demonstrates that, while maintaining the average power level of HiPIMS, the ultra-short mode enables a more than threefold increase in the ion current density of the target material onto the substrate. These findings hold promise for enhancing the quality of HiPIMS ion-plasma vapor deposition (IPVD) coatings. 10.18721/JPM.163.104 533.9.02 high-power impulse magnetron sputtering plasma vapor deposition thin films https://physmath.spbstu.ru/article/2023.68.4/
CNF RUS 31-35 National Research University of Electronic Technology Vasilevsky Pavel pavelvasilevs@yandex.ru
Moscow, Russian Federation
 National Research University of Electronic Technology Savelyev Mikhail nanonlin@yandex.ru
Moscow, Russian Federation
 Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry RAS Tolbin Alexander tolbin@inbox.ru
Moscow, Russian Federation
 I.M. Sechenov First Moscow State Medical University Ryabkin Dmitrii ryabkin@bms.zone
Moscow, Russian Federation
 National Research University of Electronic Technology Gerasimenko Alexander gerasimenko@bms.zone
Moscow, Russian Federation
 Spatial self-phase modulation of light in liquid dispersions based on conjugates of phthalocyanines and carbon nanotubes The growth in the power of laser systems makes the problem of protecting photosensitive elements of optical systems and visual organs from high-intensity radiation an urgent issue. This work explores the possibility of optical limitation of quasi-continuous laser radiation using liquid dispersions of conjugates of phthalocyanines and carbon nanotubes. It has been found that the laser beam passes through the studied materials unchanged at low power (< 100 mW), and then begins to expand with the appearance of an interference pattern. The use of a limiting diaphragm makes it possible to block part of the laser radiation, which leads to the attenuation of the laser radiation passed through the “sample-diaphragm” system. This phenomenon can be used to protect light-sensitive elements in optical systems. 10.18721/JPM.163.105 535.015 laser radiation carbon nanotubes phthalocyanines spatial self-phase modulation optical limiting https://physmath.spbstu.ru/article/2023.68.5/
CNF RUS 36-40 ITMO University Buzakov Mikhail mikhail.buzakov@metalab.ifmo.ru
St. Petersburg, Russian Federation
 ITMO University Smirnov Vyacheslav obieshkaplayer@gmail.com
St. Petersburg, Russian Federation
 ITMO University Sennikova Daria daria.sennikova@yandex.ru
St. Petersburg, Russian Federation
 ITMO University Molodtsova Anastasia a.molodtsova@metalab.ifmo.ru
St. Petersburg, Russian Federation
 ITMO University Rozenblit Alina alina.rozenblit@metalab.ifmo.ru
St. Petersburg, Russian Federation
 University of Amsterdam Porvatov Vadim eighonet@gmail.com
Amsterdam, Netherlands
 ITMO University Burmistrov Oleg oleg.burmistrov@metalab.ifmo.ru
St. Petersburg, Russian Federation
 ITMO University Puhtina Ekaterina ekaterina.puhtina@metalab.ifmo.ru
St. Petersburg, Russian Federation
 ITMO University Dmitriev Alexey alexey.dmitriev@metalab.ifmo.ru
St. Petersburg, Russian Federation
 ITMO University Olekhno Nikita nikita.olekhno@metalab.ifmo.ru
St. Petersburg, Russian Federation
 Crystallization of robotic swarms in a parabolic potential Large ensembles of particles converting their internal energy resources into mechanical motion form a class of systems denoted as active matter. Such systems demonstrate a wide range of interesting phenomena, including self-organization and phase transitions emerging in biological and artificial active matter. One of the popular platforms for experimental realization of such systems are swarms of simple moving robots. In the present work, we consider a swarm of self-propelled robots with a stadium-like shape placed in a parabolic potential and address the dynamics of crystallization in this non-equilibrium system. To quantify the formation of hexagonal crystals, we evaluate the average cluster size and six-fold parameter characterizing the hexatic ordering directly from the experimental data. 10.18721/JPM.163.106 544.015.4 crystallization self-organization active matter swarm robotics self-propelled particles https://physmath.spbstu.ru/article/2023.68.6/
CNF RUS 41-46 Balakirev Sergey sbalakirev@sfedu.ru Kirichenko Danil dankir@sfedu.ru Shandyba Nikita shandyba.nikita@gmail.com Chernenko Natalia nchernenko@sfedu.ru Solodovnik Maxim solodovnikms@sfedu.ru Droplet epitaxy of site-controlled In/GaAs(001) nanostructures with a variable distance: experiments and simulations This paper presents a complex experimental and theoretical study of the droplet epitaxial growth of In/GaAs(001) nanostructures on patterned surfaces. We observe that holes formed after GaAs overgrowth of surfaces treated with a focused ion beam are the preferred centers for the nucleation of In droplets at any temperature in a range from 250 °C to 350 °C. Good selectivity and localization of droplets are achieved along a square perimeter of holes located at a distance from 0.5 to 4.2 µm apart. However, lower temperatures are required to provide filling of more holes and formation of an ordered array of droplet pairs. Using kinetic Monte Carlo simulations, we demonstrate growth conditions which allow filling of all holes located at variable distances in a range from 20 to 340 nm and avoiding unnecessary nucleation beyond the holes. 10.18721/JPM.163.107 538.9. droplet epitaxy focused ion beams patterned surfaces Monte Carlo method https://physmath.spbstu.ru/article/2023.68.7/
CNF RUS 47-52 St. Petersburg Electrotechnical University "LETI" Chumanov Ivan chumanov2000@yandex.ru
St. Petersburg, Russian Federation
 St. Petersburg Electrotechnical University "LETI" Firsov Dmitrii d.d.firsov@gmail.com
St. Petersburg, Russian Federation
 Ioffe Institute Solov'ev Viktor vasol@beam.ioffe.ru
St. Petersburg, Russian Federation
 Ioffe Institute Chernov Mikhail chernov@beam.ioffe.ru
St. Petersburg, Russian Federation
 St. Petersburg Electrotechnical University "LETI" Komkov Oleg oleg_sergeevich@mail.ru
St. Petersburg, Russian Federation
 Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy The paper presents the results of studies of InSb/In(Ga,Al)As/GaAs heterostructures using the photoreflectance method. Based on the results of the work, the temperature dependences of the observed transition energies were obtained, the values of the miniband width and spin-orbit splitting were determined. 10.18721/JPM.163.108 538.958 heterostructures superlattices quantum wells photoreflectance method semiconductors FTIR spectroscopy https://physmath.spbstu.ru/article/2023.68.8/
CNF RUS 53-58 Lakhina Ekaterina lakhina@sfedu.ru Shandyba Nikita shandyba.nikita@gmail.com Chernenko Natalia nchernenko@sfedu.ru Kirichenko Danil dankir@sfedu.ru Balakirev Sergey sbalakirev@sfedu.ru Solodovnik Maxim solodovnikms@sfedu.ru Formation of symmetrical nanoholes by local droplet etching for site-controlled growth of single quantum dots In this paper, we study local etching of the GaAs(001) surface by Ga droplets at various technological conditions. Effects of the deposition temperature and thickness, interruption time, annealing temperature and arsenic background pressure are discussed. A minimum deposition thickness of 1.5 monolayer of Ga is found to be sufficient to etch the GaAs surface. We demonstrate that an increase in the annealing temperature leads to a decrease in the hole depth and an increase in their diameter. For the first time, we obtain symmetrical nanoholes of pyramidal shape on the GaAs(001) surface with a low surface density (~ 1·108 cm‒2 and below) allowing subsequent formation of single quantum dots for high-efficiency quantum photonic devices. 10.18721/JPM.163.109 538.9. epitaxy local droplet etching gallium arsenide A3B5 https://physmath.spbstu.ru/article/2023.68.9/
CNF RUS 59-63 ITMO University Tatarinov Dmitry dmitry.tatarinov@metalab.ifmo.ru
St. Petersburg, Russian Federation
 0000-0002-1793-6812 Skolkovo Institute of Science and Technology Pushkarev Anatoly anatoly.pushkarev@metalab.ifmo.ru 0000-0002-9257-6183 Makarov Sergey s.makarov@metalab.ifmo.ru Optimization of triple-cation perovskite thin films by PEAI additive This work presents an additive engineering approach to prepare structurally stable highly crystalline triple-cation and mixed-anion perovskite thin film by using 5 mol% doping of perovskite solution with phenethylammonium iodide (PEAI). Such an additive provides increase in grain size up to 20 % and preserves surface morphology of non-encapsulated films for at least 6 months at ambient conditions. Stability experiments showed excellent results for films with PEAI additive, which confirmed by X-ray diffraction measurements. The additive strategies have great potential to improve the power conversion efficiency and the long-term stability of the perovskite solar cell suitable for commercialization. 10.18721/JPM.163.110 53.093 halide perovskites additive engineering surface morphology https://physmath.spbstu.ru/article/2023.68.10/
CNF RUS 64-68 Chernenko Natalia nchernenko@sfedu.ru National Research University ‘Higher School of Economics” Makhov Ivan imahov@hse.ru Balakirev Sergey sbalakirev@sfedu.ru Kirichenko Danil dankir@sfedu.ru Shandyba Nikita shandyba.nikita@gmail.com Kryzhanovskaya Natalia V. Natalia nkryzhanovskaya@hse.ru Solodovnik Maxim solodovnikms@sfedu.ru Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates In this work we present the results of experimental studies of the InAs/GaAs quantum dot formation in subcritical growth modes on nanopatterned substrates. For this purpose, we used two ways for surface patterning: local droplet etching and modified oxide desorption technique. We have experimentally shown that both methods allow in situ formation of nanosized pits (or nanoholes) on the surface, but their shape and density is quite different. We also have shown that the using of growing surface nanopatterning allows both to obtain self-assembled nanostructures (including QD) at subcritical deposition thicknesses and to localize its formation in nanoholes with high selectivity and suppressing a wetting layer formation. In addition, our results have also shown that the nanohole character on a structured surface (shape, size, density) has a key effect on both the processes of nanostructure nucleation and growth and their structural and optical properties, which should also be taken into account when developing methods for creating heterostructures with regular arrays of quantum dots. 10.18721/JPM.163.111 538.9 quantum dot A3B5 wetting layer nanopatterning molecular beam epitaxy nanostructure self-organization https://physmath.spbstu.ru/article/2023.68.11/
CNF RUS 69-73 Institute of Nanotechnologies of Microelectronics of the RAS Shibalov Maksim maxshibalov@gmail.com
Moscow, Russian Federation
 Institute of Nanotechnologies of Microelectronics of the RAS Sirotina Anna ansipe@mail.ru
Moscow, Russian Federation
 Institute of Nanotechnologies of Microelectronics of the RAS Pershina Elena squirrel_red@mail.ru
Moscow, Russian Federation
 Institute of Nanotechnologies of Microelectronics of the RAS Shibalova Anastasia shibalova.a@inme-ras.ru
Moscow, Russian Federation
 Institute of Nanotechnologies of Microelectronics of the RAS Mumlyakov Alexander mumlyakov.a@inme-ras.ru
Moscow, Russian Federation
 Institute of Nanotechnologies of Microelectronics of the RAS Porokhov Nikolay porokhov.n@inme-ras.ru
Moscow, Russian Federation
 Tarkhov Michael tmafuz@mail.ru Properties of ultrathin epitaxial NbNx film on C-cut sapphire Here we report on the results of obtaining and study of epitaxial ultrathin superconductive films of niobium nitride grown on a C-plane sapphire substrate. The films were deposited from metal-organic precursor using the plasma-enhanced atomic layer deposition. We employed X-ray diffraction, and high-resolution transmission electron microscopy techniques to study the structural properties of the films. We also determined the quasiparticle diffusion constant, the coherence length, the superconducting transition temperature, the critical current density, and the non-uniformity of the resistance distribution of niobium nitride films. 10.18721/JPM.163.112 538.945 atomic layer deposition niobium nitride epitaxy superconductivity critical current density https://physmath.spbstu.ru/article/2023.68.12/
CNF RUS 74-78 Kirichenko Danil dankir@sfedu.ru Chernenko Natalia nchernenko@sfedu.ru Shandyba Nikita shandyba.nikita@gmail.com Balakirev Sergey sbalakirev@sfedu.ru Solodovnik Maxim solodovnikms@sfedu.ru Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology In this paper we presents the results of studying the molecular arsenic flux effect on the processes of native oxide thermal desorption and the resulting surface morphology of GaAs(001) substrates. We have shown that the exposure of GaAs under As flux at the stage of oxide removal significantly modulates the decomposition of native oxide and its chemical interaction with substrate materials. Based on the obtained experimental results and analysis of possible chemical reaction in this system we have shown that in the presence of arsenic molecules on the surface, free gallium atoms bind with it and no longer participate in the decomposition of native oxide components. This leads to additional decomposition of the substrate materials as a result of its etching. As a result, nanoholes of lower density, but larger in size, are formed on the surface. We have also shown that a decrease in the oxide thickness leads to a decrease in the density and dimensions of the nanoholes. 10.18721/JPM.163.113 538.9 native oxide desorption gallium arsenide native oxide molecular beam epitaxy A3B5 https://physmath.spbstu.ru/article/2023.68.13/
CNF RUS 79-83 Shandyba Nikita shandyba.nikita@gmail.com Kirichenko Danil dankir@sfedu.ru Chernenko Natalia nchernenko@sfedu.ru Alferov University Sharov Vladislav vl_sharov@mail.ru
St. Petersburg, Russian Federation
 Balakirev Sergey sbalakirev@sfedu.ru Solodovnik Maxim solodovnikms@sfedu.ru Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth Experimental studies of the effect of dose and accelerating voltage during ion beam treatment of the Si(111) surface on the substrate structure and growth processes of GaAs nanowires have been carried out. For this purpose, arrays of areas were created on the Si(111) surface by ion beam treatment using an all-over template with variation of accelerating voltage in the range of 10–30 kV and dose in the range of 0.01–10.4 pC/µm2. Based on the results of the modified surface study after GaAs nanowire growth, the dependences of the main nanowire characteristics (density, length and diameter) on the ion beam dose were obtained. It is shown that the main influence on the formed nanowire characteristics is exerted by the dose of embedded Ga-ions. By changing the value of this ion beam parameter together with the high-temperature annealing, the chemical composition and morphology of the surface silicon oxide layer can be locally controlled, thereby predetermining the parameters of the growing nanowire array. In this case, the accelerating voltage, and, hence, the distribution of ions in the near-surface layer, is of secondary importance during all-over template processing. This is confirmed by the formation of identical nanowire arrays at different accelerating voltages since the growth of nanowires occurs under the same conditions on the Si surface after the annealing stage (as confirmed by Raman spectroscopy results). 10.18721/JPM.163.114 538.975 nanowires gallium arsenide focused ion beam molecular beam epitaxy A3B5 https://physmath.spbstu.ru/article/2023.68.14/
CNF RUS 84-89 0000-0001-5386-1013 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Galkin Konstantin galkinkn@iacp.dvo.ru 0000-0002-8726-9832 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Chernev Igor igor_chernev7@mail.ru Subbotin Evgenii jons712@mail.ru Maslov Andrei maslov@iacp.dvo.ru 0000-0003-4300-0070 Kropachev Oleg chernobez@gmail.com Goroshko Dmitrii goroshko@iacp.dvo.ru Institute of Automation and Control Processes FEB RAS Balagan Semyon simak_64@mail.ru
Vladivostok, Russian Federation
 National Research Technological University (MISiS) Argunov Efim efim.argunov@mail.ru
Moscow, Russian Federation
 Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS Gutakovsky Anton gut@isp.nsc.ru
Novosibirsk, Russian Federation
 0000-0003-4127-2988 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Galkin Nikolay galkin@iacp.dvo.ru Ultrathin Cr and Fe monosilicides on Si(111) substrate: formation, optical and thermoelectrical properties In this study, the formation, crystal structure, optical and thermoelectric properties of ultrathin (UT) films of iron and chromium monosilicides are considered, which exhibit optical and thermoelectric properties characteristic of semimetals with a low density of states near the Fermi level and the main contribution of holes to the Seebeck coefficient in the temperature range 120–400 K and the transition to its negative values at T > 400 K. The power factor for FeSi and CrSi UT films versus temperature was calculated and ab initio calculations of the phonon structure and thermal conductivity for bulk FeSi and its nanowires were carried out, which made it possible to estimate the thermoelectric figure of merit of ultrathin FeSi films. 10.18721/JPM.163.115 539.23+535.39+537.32 silicon Cr and Fe monosilicides ultrathin films crystal structure optical functions thermoelectric properties power factor ab initio calculation thermal conductivity https://physmath.spbstu.ru/article/2023.68.15/
CNF RUS 90-93 Alferov University Baeva Maria maria.baeva111@gmail.com
St. Petersburg, Russian Federation
 ITMO University Furasova Aleksandra aleksandra.furasova@metalab.ifmo.ru
St. Petersburg, Russian Federation
 0000-0002-8661-4083 Alferov University Mozharov Alexey mozharov@spbau.ru
St. Petersburg, Russian Federation
 Tonkaev Pavel pavel.tonkaev@metalab.ifmo.ru Hybrid Perovskite/GaP nanowires solar cells with enhanced photovoltaic performance In this work we report an improved photovoltaic performance of hybrid halide perovskite solar cell with integrated into a active layer GaP nanowires. The incorporation of GaP nanowires improves charge extraction from a perovskite layer. As a consequence, we boost the MAPbI3 perovskite solar cell efficiency up to 18.8% by open-circuit voltage and short-circuit current density enhancement. The provided multi-physical theoretical simulations of the solar cells with the incorporated GaP nanowires describe the mechanism of charge extraction and optical absorption improvement. 10.18721/JPM.163.116 53.06 perovskite solar cells GaP nanowires electric field management photon management https://physmath.spbstu.ru/article/2023.68.16/
CNF RUS 94-99 Alferov University Baeva Maria maria.baeva111@gmail.com
St. Petersburg, Russian Federation
 Gets Dmitry smart_insuIator@mail.n.i ITMO University Polushkin Artem artem.polushkin@metalab.ifmo.ru
St. Petersburg, Russian Federation
 Alferov University Vorobyev Alexandr alex.spbau@mail.ru
St. Petersburg, Russian Federation
 Light-emitting and light-detecting perovskite electrochemical cell on silicon Here we report on a novel architecture of inorganic perovskite light-emitting and light-detecting electrochemical cell formed on silicon substrate. The cell’s active material layer consists of a composite material made: halide perovskite (CsPbBr3) microcrystals, polymer support matrix (poly(ethylene oxide)), and added mobile ions (Li+). The proposed device emits light of 7000 cd/m2 and electroluminescence efficiency of 1.3∙105 lm/W at 523 nm. The light-detecting property of the device is characterized by sensitivity up to 0.75 A/W, specific detectivity of 8.56∙1011 Jones, and linear dynamic range of 48 dB. Moreover, since the device fabricated is fabricated on a silicon substrate it exhibits 40% lower Joule heating compared to the perovskite optoelectronic devices fabricated on conventional ITO/glass substrates. 10.18721/JPM.163.117 53.06 composite inorganic halide perovskite silicon light-emitting electrochemical cell photodetector https://physmath.spbstu.ru/article/2023.68.17/
CNF RUS 100-105 Voronezh State University of Engineering Technology Lenshin Alexander lenshinas@mail.ru
Voronezh, Russian Federation
 Voronezh State University Peshkov Yaroslav tangar77@mail.ru
Voronezh, Russian Federation
 Voronezh State University of Engineering Technology Chernousova Olga byolval@mail.ru
Voronezh, Russian Federation
 Voronezh State University Kannykin Sergey svkannykin@gmail.com
Voronezh, Russian Federation
 Voronezh State University Grechkina Margarita grechkina_m@mail.ru
Voronezh, Russian Federation
 0000-0002-3956-196X Voronezh State University Minakov Dmitriy
Voronezh, Russian Federation
 Voronezh State University Zolotukhin Dmitriy zolotuhin@phys.vsu.ru
Voronezh, Russian Federation
 Voronezh State University Agapov Boris b.agapov2010@yandex.ru
Voronezh, Russian Federation
 A change in the morphology of multilayer porous silicon with a stepwise decrease in the etching current density We present an experimental study of multilayer porous silicon formed by electrochemical etching. Special emphasis is placed on effects that arise from a stepwise decrease in the current density while maintaining the total etching time. In order to provide a fully understanding of the morphology of the surface, we used scanning electron and atomic force microscopy. X-ray reflectivity was used to assess the porosity of porous layers. It was found that a stepwise decrease in the current density leads to the formation of a two-layer structure without changing the porosity of the base bottom layer. However, the porosity of the top layer can be varied over a wide range, which directly affects the photoluminescence of the samples. Our results show how the sample production conditions affect the fine tuning of the surface layer morphology of multilayer porous silicon. 10.18721/JPM.163.118 538.9 porous silicon multilayer nanostructures X-ray reflectivity surface morphology https://physmath.spbstu.ru/article/2023.68.18/
CNF RUS 106-111 0000-0002-8726-9832 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Chernev Igor igor_chernev7@mail.ru Subbotin Evgenii jons712@mail.ru National Research Technological University (MISiS) Argunov Efim efim.argunov@mail.ru
Moscow, Russian Federation
 Kozlov Aleksei kozlov.ag@dvfu.ru Institute of Chemistry FEB RAS Gerasimenko Andrey gerasimenko@ich.dvo.ru
Vladivostok, Russian Federation
 0000-0003-4127-2988 Institute of Automation and Control Processes, Far Eastern Branch of the RAS Galkin Nikolay galkin@iacp.dvo.ru Institute of Nanotechnologies of Microelectronics of the RAS Poliakov Maxim
Moscow, Russian Federation
 Volkova Lidiya lidiya.volkova.96@mail.ru Institute of Nanotechnologies of Microelectronics of the RAS Dudin Alexander dudin.a@inme-ras.ru
Moscow, Russian Federation
 Gouralnik Alexander fun_era@mail.ru Mg2Si film on Si(111) prepared by Ultra-Fast Mg reactive deposition: crystal structure and thermoelectric properties The Mg2Si film (~ 800 nm thick) was grown by pulsed reactive deposition of Mg on Si(111) at 340 °C in UHV. Structural investigations by XRD, SEM and cross-sectional x-HRTEM demonstrate high crystal quality and 100% texture of the film. Thermoelectric properties of the Mg2Si film are characterized within 290–470 K. The film conductivity changes from p-type below 309 K to n-type at higher temperatures. The power factor is 0.27 mW/m×K2 at 470 K. The p-type conductivity can be associated with presence of oxygen or/and vacancies (VMg, VMg2Si). 10.18721/JPM.163.119 539.23+539.25+539.26+537.32+537.9 magnesium silicide silicon films epitaxy reactive epitaxy pulsed deposition crystal structure microscopy transport properties Seebeck coefficient power factor https://physmath.spbstu.ru/article/2023.68.19/
CNF RUS 112-116 National Research Tomsk State University Kukenov Olzhas okukenov@mail.ru
Tomsk, Russian Federation
 National Research Tomsk State University Sokolov Arseniy ars856570@gmail.com
Tomsk, Russian Federation
 0009-0008-8052-3253 National Research Tomsk State University Dirko Vladimir
Tomsk, Russian Federation
 0000-0002-4029-8353 National Research Tomsk State University Lozovoy Kirill
Tomsk, Russian Federation
 National Research Tomsk State University Kokhanenko Andrey kokh@mail.tsu.ru
Tomsk, Russian Federation
 Effect of temperature during homoepitaxial growth of Si on Si(100) on the character of reflection high-energy electron diffraction patterns To create high-quality nanostructures, it is important to understand the surface morphology for given growth parameters. The paper shows the effect of temperature on the ratio of intensities and periods corresponding to the growth of Si steps with different types of superstructure. The analysis was carried out in directions [100] and [110]. 10.18721/JPM.163.120 539.27 molecular beam epitaxy reflection high-energy electron diffraction step-flow growth of silicon homoepitaxy https://physmath.spbstu.ru/article/2023.68.20/
CNF RUS 117-121 Kenesbay Ramazan ramazan.kenesbay.1999@gmail.com Miroshnichenko Anna anna.miroshnichenko.sergeevna@gmail.com 0000-0003-4517-0807 Alferov University Mitin Dmitry mitindm@mail.ru
St. Petersburg, Russian Federation
 Alferov University Baeva Maria maria.baeva111@gmail.com
St. Petersburg, Russian Federation
 Influence of double layer PMHS/PDMS encapsulation on CsPbBr3 PeLEC properties in high humidity conditions In this paper we describe a new method to improve properties of a perovskite light-emitting electrochemical cell (PeLEC) by double layer polymer encapsulation. Our perovskite devices include 1) CsPbBr3-poly(ethylene oxide) layer as emissive layer, 2) NiOx:Cu nanoparticles layer as hole transport layer, 3) a transparent single wall carbon nanotubes as an electrode of the structure and 4) a double layer encapsulation polymer layers. These encapsulation layers consist of metal catalyst-free cross-linked polymethylhydrosiloxane and polydimethylsiloxane Sylgard 184. After 168 hours of aging in 80% relative humidity conditions an increase in luminance and in photo luminance quantum yield of our devices was detected. Our encapsulation provides optimal exposure of water vapor on perovskite material, which improves device properties by partial phase transition of CsPbBr3 to Cs4PbBr6, which has been confirmed by X-ray diffraction method. The Cs4PbBr6 passivate CsPbBr3 crystals and then the polymethylhydrosiloxane layer does not allow agglomeration of perovskite grains. The polydimethylsiloxane layer is required as a mechanical supporting layer. The polymethylhydrosiloxane/polydimethylsiloxane encapsulation of perovskite devices reveals a promising new way of development of flexible and stretchable perovskite light-emitting devices, which can work in extreme humid conditions. 10.18721/JPM.163.121 538.9 perovskite encapsulation polysiloxanes metal-free cross-linking humidity aging https://physmath.spbstu.ru/article/2023.68.21/
CNF RUS 122-127 Eremenko Mikhail eryomenko@sfedu.ru Nikitina Larisa larnikitina@sfedu.ru Southern Federal University Jityaeva Julia zhityaeva@sfedu.ru
Taganrog, Russian Federation
 Lakhina Ekaterina lakhina@sfedu.ru Southern Federal University Klimin Viktor kliminvs@sfedu.ru
Rostov-on-Don, Russian Federation
 Southern Federal University Ageev Oleg ageev@sfedu.ru
Taganrog, Russian Federation
 Effect of plasma-chemical treatment of Si(001) substrates on the subsequent epitaxial growth of GaAs In this work, we investigated the effect of plasma-chemical treatment of silicon substrates on the subsequent epitaxial growth of GaAs. It is shown that a change in processing modes did not lead to a strong change in the root-mean-square roughness of the initial silicon surface. It was found that under the same growth conditions GaAs is formed on substrates differently depending on the silicon treatment mode: from individual crystallites with nanowires to a structure intergrown from individual crystallites. It is shown that a change in the annealing temperature significantly affects the resulting surface morphology. 10.18721/JPM.163.122 538.9 molecular beam epitaxy silicon GaAs monolithic integration plasma-chemical treatment scanning electron microscopy https://physmath.spbstu.ru/article/2023.68.22/
CNF RUS 128-132 Moscow Pedagogical State University Bondareva Polina p.bondareva2016@yandex.ru
Moscow, Russian Federation
 0000-0001-6494-0147 Moscow Pedagogical State University Shein Kirill
Moscow, Russian Federation
 Lyubchak Anastasia anlyubchak@miem.hse.ru 0009-0008-4349-7332 Moscow Pedagogical State University Izmaylov Ramil
Moscow, Russian Federation
 0000-0003-1529-5326 Prokhorov General Physics Institute, RAS Rybin Maksim
Moscow, Russian Federation
 0000-0003-2560-6503 National Research University “Higher School of Economics” Gayduchenko Igor igaiduchenko@hse.ru
Moscow, Russian Federation
 Goltsman Grigory goltsman@rplab.ru Sub-terahertz radiation detection using graphene noise thermometry method In this paper we investigate a novel approach to inventing graphene-based sub-terahertz bolometers using noise thermometry. Graphene is a unique material for detecting radiation in the sub-terahertz (0.1–1 THz) and terahertz (1–10 THz) ranges due to its record low electron heat capacity and weak electron-phonon coupling. This results in sufficient heating of graphene electron system under terahertz radiation. The main challenge in the realization of graphene terahertz detectors arises due to weak graphene resistance dependence on temperature. Here, we solve this problem by measuring noise spectral density in graphene devices using lock-in amplifier technique under radiation of 0.13 THz. The measured thermal noise is directly dependent on electron temperature and can be used as detector signal as well as probe of electron temperature under sub-terahertz radiation. The obtained experimental data can be used to optimize modern graphene terahertz detectors and develop new ones. 10.18721/JPM.163.123 538.9 graphene THz detectors bolometers noise thermometry https://physmath.spbstu.ru/article/2023.68.23/
CNF RUS 133-137 Nikitina Ekaterina mail.nikitina@mail.ru Alferov University Berezovskaya Tamara bertana@spbau.ru
St. Petersburg, Russian Federation
 Alferov University Pirogov Evgeny zzzavr@gmail.com
St. Petersburg, Russian Federation
 Alferov University Vasilkova Elena elenvasilkov@gmail.com
St. Petersburg, Russian Federation
 0000-0003-1835-1629 Alferov University Shubina Kseniia rein.raus.2010@gmail.com
St. Petersburg, Russian Federation
 Alferov University Sinitskaya Olesya olesia-sova@mail.ru
St. Petersburg, Russian Federation
 0000-0001-8629-2064 Alferov University Sobolev Maxim
St. Petersburg, Russian Federation
 Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel Variation of the electrophysical and structural parameters of GaAs-based pseudomorphic transistor heterostructures with an InGaAs channel during more than eleven-year storage in natural conditions have been investigated. It was found that the values of the electrophysical parameters remained within specified limits (taking into account measurement errors) after 11 years of storage. The structural properties (thickness and composition of the InGaAs channel) of pseudomorphic heterostructures have undergone significant changes associated with the InGaAs channel layer broadening due to atomic diffusion. 10.18721/JPM.163.124 621.382.323 pseudomorphic transistors PHEMT heterostructures parameter stability https://physmath.spbstu.ru/article/2023.68.24/
CNF RUS 138-143 Moscow Institute of Physics and Technology (National Research University) Vershinina Olesya seraia.ov@phystech.edu
Dolgoprudny, Moscow region, Russian Federation
 Moscow Institute of Physics and Technology (National Research University) Filalova Emilia filalova.em@phystech.edu
Dolgoprudny, Moscow region, Russian Federation
 0000-0003-2149-4903 Moscow Institute of Physics and Technology (National Research University) Kerechanina Maria
Dolgoprudny, Moscow region, Russian Federation
 Moscow Institute of Physics and Technology (National Research University) Urazov Maxim urazov.mn@mipt.ru
Dolgoprudny, Moscow region, Russian Federation
 Moscow Institute of Physics and Technology (National Research University) Khramov Egor Egor.Khramov@phystech.edu
Dolgoprudny, Moscow region, Russian Federation
 Moscow Institute of Physics and Technology (National Research University) Lizunova Anna anna.lizunova@gmail.com
Dolgoprudny, Moscow region, Russian Federation
 The effect of laser radiation on the properties of platinum nanoparticles produced in a gas discharge This study is devoted to the investigation of the effect of laser radiation of different wavelengths (355, 527 and 1054 nm) on the morphology, structure and optical properties of platinum nanoparticles synthesized in a gas discharge. The results confirmed that all three types of lasers can be used to modify platinum nanoparticles and to change their sizes. The best modification that is shape transformation from aggregates to individual nanoparticles is achieved by using an infrared laser (1054 nm). It was shown that all obtained nanoparticles have a maximum of plasmon resonance in the ultraviolet region in the wavelength range from 200 to 300 nm, which is similar to the additionally simulated calculations based on the theory of Mie absorption spectra of monodisperse platinum particles with sizes from 5 to 120 nm. 10.18721/JPM.163.125 544.032.65 Platinum nanoparticles (Pt NPs) spark discharge laser radiation reshape plasmon resonance ultraviolet (UV) https://physmath.spbstu.ru/article/2023.68.25/
CNF RUS 144-150 I.N. Ulyanov Chuvashia State University Smirnov Alexander fizteh21@yandex.ru
Cheboksary, Russian Federation
 0000-0002-4680-6224 I.N. Ulyanov Chuvashia State University Abrukov Victor
Cheboksary, Russian Federation
 0009-0000-6712-0291 I.N. Ulyanov Chuvashia State University Platonov Pavel
Cheboksary, Russian Federation
 0000-0003-4860-3460 I.N. Ulyanov Chuvashia State University Anufrieva Darya
Cheboksary, Russian Federation
 0000-0001-8645-2822 I.N. Ulyanov Chuvashia State University Kokshina Anna
Cheboksary, Russian Federation
 0000-0001-8974-2307 I.N. Ulyanov Chuvashia State University Kazakov Valery
Cheboksary, Russian Federation
 I.N. Ulyanov Chuvashia State University Petrov Dmitry dimapetrovasp@yandex.ru
Cheboksary, Russian Federation
 I.N. Ulyanov Chuvashia State University Tyunterov Evgeny tyunterov97@mail.ru
Cheboksary, Russian Federation
 0000-0001-8432-5635 I.N. Ulyanov Chuvashia State University Vasilyeva Olga
Cheboksary, Russian Federation
 0000-0002-9723-5652 I.N. Ulyanov Chuvashia State University Ksenofontov Sergey
Cheboksary, Russian Federation
 0000-0003-2498-1192 I.N. Ulyanov Chuvashia State University Lepaev Alexander
Cheboksary, Russian Federation
 Application of linear chain carbon films for sensitive elements of humidity sensors The technologies for synthesizing and the results of investigating novel relative humidity sensors are described. Films made of various metals in combination with linear-chain carbon films were used as electrodes. The study presents the results of testing the sensors for sensitivity and recovery time. Multifactor computational models were created using neural networks based on the obtained data to solve both direct and inverse experimental problems. 10.18721/JPM.163.126 551.508.7 linear chain carbon film film electrodes silver films tin films aluminum films sensor relative humidity https://physmath.spbstu.ru/article/2023.68.26/
CNF RUS 151-156 0000-0002-3469-5897 Alferov University Kondratev Valeriy kvm_96@mail.ru
St. Petersburg, Russian Federation
 0009-0006-0923-1501 Peter the Great St. Petersburg Polytechnic University Kozko Ivan
St. Petersburg, Russian Federation
 0009-0005-0777-6746 Alferov University Karaseva Elizaveta
St. Petersburg, Russian Federation
 0000-0001-6869-1213 Alferov University Vyacheslavova Ekaterina cate.viacheslavova@yandex.ru 0000-0002-4110-1647 Shugabaev Talgat talgashugabaev@mail.ru Alferov University Svinkin Nikita nik-svinkin@mail.ru
St. Petersburg, Russian Federation
 0000-0001-7223-7232 Moscow Institute of Physics and Technology (National Research University) Bolshakov Alexey acr1235@mail.ru
Moscow, Russian Federation
 Towards nanowire-based selective vapor sensing with an aid of impedance spectroscopy This work is aimed at development of highly sensitive silicon (Si)-based sensors allowing for selective detection and analysis of liquid solution composition containing ammonia (NH3) and hydrochloric acid (HCl) in an indirect manner. To provide enhanced sensitivity, we use Si nanowires obtained with cryogenic plasma etching with high aspect ratio providing large adsorption surface area. The nanowires are placed on a contact platform and electrochemical impedance spectroscopy (EIS) is used to detect the analytes. For optimization of the sensor performance we develop three types of the sensor based on as-fabricated Si nanowires, nanowires treated with hydrofluoric acid (HF) and nanowires decorated with silver (Ag) NPs. 10.18721/JPM.163.127 538.9 silicon sensors selective detection nanowires https://physmath.spbstu.ru/article/2023.68.27/
CNF RUS 157-162 0009-0008-4344-4863 Alferov University Nikolaeva Aleksandra nikalex2000@bk.ru
St. Petersburg, Russian Federation
 0000-0002-3469-5897 Alferov University Kondratev Valeriy kvm_96@mail.ru
St. Petersburg, Russian Federation
 Kadinskaya Svetlana skadinskaya@bk.ru 0009-0007-9013-7973 Alferov University Markina Diana
St. Petersburg, Russian Federation
 0000-0002-2209-6483 Alferov University Kochetkov Fedor
St. Petersburg, Russian Federation
 Zubov Fedor fzubov@hse.ru 0009-0009-7051-8458 Alferov University Monastyrenko Anatoliy
St. Petersburg, Russian Federation
 0000-0001-7223-7232 Moscow Institute of Physics and Technology (National Research University) Bolshakov Alexey acr1235@mail.ru
Moscow, Russian Federation
 Pressure sensing with ZnO structures in PDMS matrix via impedance spectroscopy The work is devoted to fabrication of the mechanical pressure sensors based on zinc oxide microwires (ZnO MWs) synthesized via low-temperature hydrothermal method. The ZnO MWs were encapsulated in Poly(dimethylsiloxane) (PDMS) membrane by G-coating technique between two ceramic substrates with interdigital gold contacts. The correlation between the mechanical load applied to the sensor and its electrophysical characteristics is studied with electrical impedance spectroscopy. The results of the work are of interest for the development of pressure sensors, in particular for miniature portable flexible health monitoring systems. 10.18721/JPM.163.128 538.9 ZnO PDMS sensor https://physmath.spbstu.ru/article/2023.68.28/
CNF RUS 163-169 V.I. Vernadsky Crimean Federal University Dzedolik Igor igor.dzedolik@cfuv.ru
Simferopol, Russian Federation
 V.I. Vernadsky Crimean Federal University Tomilin Sergey s.tomilin.phystech@cfuv.ru
Simferopol, Russian Federation
 0000-0001-9381-0034 V.I. Vernadsky Crimean Federal University Polulyakh Sergey sergey.polulyakh@cfuv.ru
Simferopol, Russian Federation
 V.I. Vernadsky Crimean Federal University Yakubenko Bogdan bdrujok@mail.ru
Simferopol, Russian Federation
 Logic gates based on carbon nanotubes The propagation of a plasmonic pulse signal in carbon nanotubes (CNTs) has been investigated theoretically, and the circuits of plasmonic logic gates “NOT” and “OR” based on CNTs have been proposed. These logic gates represent a complete functional basis for binary logic. The spatial modeling of plasmonic logic gates is performed taking into account the atomic structure of CNTs. The proposed logic gates can be used for plasmonic circuitry in the telecommunication frequency range. 10.18721/JPM.163.129 535.016 nanoplasmonic logic gate Mach-Zehnder-type interferometer carbon nanotube plasmon interference https://physmath.spbstu.ru/article/2023.68.29/
CNF RUS 170-175 Goldberg Artemiy artemiy.goldberg@mail.ru Peter the Great St. Petersburg Polytechnic University Provodin Daniil provodindanya@gmail.com
St. Petersburg, Russian Federation
 Kochetkov Igor K.Igor.D@yandex.ru Davydov Vadim davydov_vadim66@mail.ru Features of investigation of liquid media by optical differential method in express-control The features of liquid media investigation during express control using the phenomenon of refraction are considered. The advantages of using the differential method for investigation of liquid media in comparison with the others are noted. The features of liquid media investigation with using the differential method are established. A new technique for liquid media investigation has been developed, which allows changing the discreteness of the scale for measuring the refractive index n in the range from 1.2300 to 2.230. The design of the Anderson differential cuvette has been developed for carrying out research with required accuracy, by changing the discreteness of the measurement scale n. The results of experimental investigations of liquid media (water and water with iron oxides) are presented. 10.18721/JPM.163.130 535-7 liquid refraction refractive index Anderson differential cell laser radiation axis medium state control https://physmath.spbstu.ru/article/2023.68.30/
CNF RUS 176-181 Kadinskaya Svetlana skadinskaya@bk.ru 0000-0002-3469-5897 Alferov University Kondratev Valeriy kvm_96@mail.ru
St. Petersburg, Russian Federation
 0000-0001-7143-6686 Kusnetsov Alexey alkuznetsov1998@gmail.com Lihachev Alexey lihachev_alexey@bk.ru Nashchekin Alexey V. nashchekin@mail.ioffe.ru St.Petersburg State University of Film and Television Akopyan Irina irina-akopyan@yandex.ru
St. Petersburg, Russian Federation
 St. Petersburg State University Serov Alexey a.serov@spbu.ru
St. Petersburg, Russian Federation
 St.Petersburg State University Labzovskaya Mariana
St. Petersburg, Russian Federation
 0000-0002-3705-9706 St.Petersburg State University of Film and Television Mikushev Sergey
St. Petersburg, Russian Federation
 St.Petersburg State University Novikov Boris bono1933@mail.ru
St. Petersburg, Russian Federation
 St. Petersburg State University Shtrom Igor i.shtrom@spbu.ru
St. Petersburg, Russian Federation
 0000-0001-7223-7232 Moscow Institute of Physics and Technology (National Research University) Bolshakov Alexey acr1235@mail.ru
Moscow, Russian Federation
 Deep-Level Emission Tailoring in ZnO Nanostructures Grown via Hydrothermal Synthesis Development of the new approaches for synthesis of luminescent semiconductor nanomaterials is of high demand. In this work, nano- and microstructures of zinc oxide were synthesized by the hydrothermal method to provide new insight onto the optimization of this material optical properties. The possibility of controlling the synthesized ZnO geometry and morphology using various surfactants during the synthesis was demonstrated. Further study of the structures obtained by PL spectroscopy made it possible to observe a correlation between the hydrothermal growth conditions and the obtained ZnO nanostructures optical properties. This property, together with the ability to control the structures geometry, opens up new possibilities for their application in nanophotonics, UV-VIS and white light sources. 10.18721/JPM.163.131 535.015 zinc oxide hydrothermal nanowire photoluminescence deep level emission PEI sodium citrate https://physmath.spbstu.ru/article/2023.68.31/
CNF RUS 182-186 Alferov University Nadoyan Irina ir.nadoyan@gmail.com
St. Petersburg, Russian Federation
 0000-0002-3947-8648 Alferov University Solomonov Nikita
St. Petersburg, Russian Federation
 0000-0001-8440-494X Alferov University Novikova Kristina novikova_k@spbau.ru
St. Petersburg, Russian Federation
 Alferov University Sharov Vladislav vl_sharov@mail.ru
St. Petersburg, Russian Federation
 0000-0002-8661-4083 Alferov University Mozharov Alexey mozharov@spbau.ru
St. Petersburg, Russian Federation
 ITMO University Kislov Denis denis.kislov@metalab.ifmo.ru
St. Petersburg, Russian Federation
 ITMO University Petrov Mihail m.petrov@metalab.ifmo.ru
St. Petersburg, Russian Federation
 0000-0001-9792-045X Peter the Great St. Petersburg Polytechnic University Mukhin Ivan muhin_is@spbstu.ru Nanooscillators based on carbon whiskers for detectors of optomechanical effects A new mechanical resonance method for determining the effect of photoinduced heating from laser radiation on mechanical systems based on carbon whiskers was developed. We demonstrate a fast and universal approach for manufacturing the resonant nanooscillator detecting the effect of optical radiation on the properties of nanoobjects. The nanomechanical whisker-based resonator was grown on at the end of the tungsten needle using an electron beam induced deposition approach implemented in a scanning electron microscope. The influence of laser radiation on the mechanical properties of nanoresonators was experimentally revealed, and the trajectory of their movement at the first mechanical mode was visualized. The demonstrated approach for detecting the influence of optical radiation on the vibrational characteristics of nanooscillators paves the way for new photothermal and optomechanical sensors. 10.18721/JPM.163.132 538.9 nanowhiskers oscillations optical heating optical power sensing https://physmath.spbstu.ru/article/2023.68.32/
CNF RUS 187-192 0009-0003-5049-538X Alferov University Zavyalova Eseniya
St. Petersburg, Russian Federation
 0000-0001-7143-6686 Kusnetsov Alexey alkuznetsov1998@gmail.com 0009-0003-4890-683X ITMO University Rider Maxim
St. Petersburg, Russian Federation
 0000-0002-3469-5897 Alferov University Kondratev Valeriy kvm_96@mail.ru
St. Petersburg, Russian Federation
 0009-0003-7988-7520 ITMO University Kovova Mariia
St. Petersburg, Russian Federation
 0000-0002-9658-5036 Alferov University Shmakov Stanislav
St. Petersburg, Russian Federation
 Fedorov Valery vfedorov@pnpi.spb.ru 0000-0001-9626-8543 ITMO University Zakharov Viktor
St. Petersburg, Russian Federation
 0000-0001-7223-7232 Moscow Institute of Physics and Technology (National Research University) Bolshakov Alexey acr1235@mail.ru
Moscow, Russian Federation
 Towards versatile photonics based on GaP nanowires decorated with carbon dots Carbon dots (CDs) exhibit great potential as nanostructures in photonics due to their simple fabrication process, adaptable and effective emission. We used hydrothermal synthesis to fabricate CDs and decorated vertical gallium phosphide (GaP) nanowire array. Through feasible drop-casting deposition technique, we successfully observed efficient luminescence across the nanowires surface using confocal microscopy. Numerical calculations combined with experimental data revealed amplified luminescence through the resonant optical modes of the nanowire, acting as a waveguide. As a result, this study provides insight into the possibility of development of novel photonic devices by decorating optically dense nanowires with CDs to enhance and control over the emission efficiency and propagation. 10.18721/JPM.163.133 537.876.4 carbon dots gallium phosphide nanowires confocal microscopy photoluminescence https://physmath.spbstu.ru/article/2023.68.33/
CNF RUS 193-197 0000-0002-6762-2053 Southern Federal University Dukhan Denis duhan@sfedu.ru
Taganrog, Russian Federation
 Balakirev Sergey sbalakirev@sfedu.ru 0000-0002-1799-1125 Shanghai University Voloshina Elena
Shanghai, China
 Solodovnik Maxim solodovnikms@sfedu.ru Ab initio modelling of In wetting layer formation on As-stabilized GaAs during first stages of droplet epitaxy In this work we carry out theoretical study of the formation of an In wetting layer on the surface of As-stabilized GaAs(001)-(1×1) to better understand the growth kinetics of metal droplets during droplet epitaxy. For this study, we calculate the dependence of the adatom adsorption energy (Eads) on the In coverage, since its value describes force with which adatoms interact with substrates, directly affecting their mobility. Calculations were performed using the state-of-the-art approaches of the density functional theory. The results show that at 0.125 ML coverage Eads has very high value of 8.48 eV which is explained by the adsorbate induced surface reconstruction being included in calculated value. With increasing coverage Eads dropped significantly (down to 3.588 eV/adatom at 1.75 ML coverage) which can lead to subsequent adatoms having greater mobility and can affect the size and surface density of metal nanodroplets and quantum dots based on them. 10.18721/JPM.163.134 538.975 density functional theory GaAs indium adsorption energy critical thickness droplet epitaxy molecular beam epitaxy https://physmath.spbstu.ru/article/2023.68.34/
CNF RUS 198-203 0000-0002-3698-6700 Peter the Great St. Petersburg Polytechnic University Wang Ding jssdwang06@mail.ru
St. Petersburg, Russian Federation
 Davydov Vadim davydov_vadim66@mail.ru Formation features of motion trajectory of mercury-199 ions in the quantum frequency standard for space applications The necessity of developing an atomic clock that can operate without adjusting the scale during a satellite-to-Earth communication session is substantiated. This is necessary to place a satellite constellation in higher orbits, where a stable and long communication session with the Earth cannot always be realized. It is also necessary during a long flight in outer space (between planets). The problems that arise in the operation of the current models of atomic clocks now in use in orbit are mentioned. It has been established that the most promising solution to this problem is the use of atomic clocks on mercury-199 ions. The main problem that arises when reducing the size of the structure of atomic clocks on mercury-199 ions when they are placed on a satellite or on an autonomous space mobile object is considered in detail. To solve this problem, a mathematical model has been developed to calculate the trajectory of mercury-199 ions in the Paul trap when its dimensions change, which must be selected in accordance with the technical characteristics of the satellite or moving object. The modeling results of ion motion trajectory depending on the parameters of trap rods and control voltages are presented. Options for determining the optimal parameters of ion trap under conditions of limited volume and mass of the atomic clock are proposed. 10.18721/JPM.163.135 53.09 Global navigation satellite systems quantum frequency standard on mercury-199 ions Paul trap Mathieu equation trajectory of ions optimal parameter https://physmath.spbstu.ru/article/2023.68.35/
CNF RUS 204-208 Zhurina Angelina gelya.zhurina@mail.ru Pecherskaya Ekaterina pea1@list.ru 0009-0000-9721-9401 Penza State University Emelyanov Nikita
Penza, Russian Federation
 0000-0001-5075-2727 Penza State University Shepeleva Juliya
Penza, Russian Federation
 Penza State University Kozlov Gennady politeh@pnzgu.ru
Penza, Russian Federation
 Determination of the electrophysical parameters of piezoelectrics using complex conductivity The use of piezomaterials as a substrate for a graphene structure is considered. Since the surface acoustic waves generated in piezoelectric materials, are on the surface of a solid body, piezoelectrics can act as a substrate for graphene. Methods for determining the electrical parameters of piezoelectric materials are studied and selected, the ways to improve these methods are considered. In order for piezoelectrics to be used as a substrate for graphene, the properties of piezoelectrics must be carefully studied. Therefore, the frequency characteristics of a sample in the form of a tablet based on solid solutions of zirconate – lead titanate were measured. As an improvement in the methods for determining the electrophysical parameters of piezoelectric elements, it is proposed to process the measurement results automatically using a multifunctional mathematical program, such data processing helps to reduce the error of indirect measurement results of the electrophysical parameters of piezoelectric materials. A graph of the amplitude-frequency characteristics of the sample was built. Thanks to computer processing, it was possible to reveal the relationship between the piezoelectric constant of the sample and its geometric dimensions. It turned out that the piezoelectric element dimensions strongly affect the frequency response and other piezoelectric constants. 10.18721/JPM.163.136 666.665 graphene piezoelectrics electrophysical parameters of piezoelectrics https://physmath.spbstu.ru/article/2023.68.36/
CNF RUS 209-215 Bauman Moscow State Technical University Vetrova Natalia vetrova@bmstu.ru
Moscow, Russian Federation
 0000-0001-6485-6754 Bauman Moscow State Technical University Kuimov Evgeny
Moscow, Russian Federation
 Bauman Moscow State Technical University Shashurin Vasily shashurin@bmstu.ru
Moscow, Russian Federation
 Bauman Moscow State Technical University Luneva Lubov luneva@bmstu.ru
Moscow, Russian Federation
 Bauman Moscow State Technical University Meshkov Sergey meschkow@bmstu.ru
Moscow, Russian Federation
 Bauman Moscow State Technical University Makeev Mstislav m.makeev@bmstu.ru
Moscow, Russian Federation
 Saint Petersburg Mining University Kozhukov Andrey
St. Petersburg, Russian Federation
 Modeling of current-voltage characteristics of resonant tunneling structures for solving the problems of studying objective functions in the problems of synthesizing resonant tunneling diode The resonant tunneling diode (RTD), due to the possibility of targeted synthesis of the current-voltage characteristic, is one of the most attractive non-linear elements of signal converters. To realize the advantages of the RTD, a model of its current-voltage characteristic (CVC) is needed, however, the existing models do not allow for a physical and mathematical interpretation of the relationships between the CVC parameters and the RTD design, which makes it impossible to analyze the objective functions and, as a result, the choice of optimization method. Hence, the problem of studying objective functions arises, which makes the choice of the optimization method unreasonable. To solve this problem, a compact analytical model of current transfer has been developed, the distinguishing features of which are the allowance for interelectronic interaction and the absence of undetermined empirical correction factors. Estimates of the electron density in the quantum well of the RTD heterostructural channel and the self-consistent correction to resonant levels are obtained. The developed model makes it possible to obtain estimates comparable in accuracy with estimates of distributed models over the entire area of the positive differential resistance of CVC with a relative error for AlGaAs structures not exceeding 1%, which meets the requirements of the design problems of modern radio electronic devices, in particular, devices for converting the frequency of radio signals for receiving - transmitting systems for various purposes. Thus, the presented compact model is promising for integration into RTD-based device design systems. 10.18721/JPM.163.137 621.382 mathematical modeling resonant tunneling structures self-consistent potential electron density oscillators https://physmath.spbstu.ru/article/2023.68.37/
CNF RUS 216-220 0000-0002-8163-4245 Moscow Institute of Physics and Technology (National Research University) Ivchenko Egor ivchenko.ei@phystech.edu 0000-0003-1511-1128 Khmelev Aleksandr a.khmelev@goqrate.com 0000-0002-1599-9801 Kurochkin Vladimir v.kurochkin@rqc.ru Detection-efficiency mismatch in a satellite-to-ground quantum communication The detection efficiency mismatch is one of the issues with practical quantum key distribution. The challenge is also inherent in satellite quantum communication due to the detectors and optical elements imperfections in the different quantum channels. Here, we generalize the theory developed for optical fiber QKD to satellite-to-ground QKD with four unbalanced polarization channels to estimate the secret key length. We simulate satellite quantum communication for the measured parameters of the realistic receiving ground station and calculate bounds for the secret key rate and length using two approaches: the first one when you separate the data on bases and the second when calculate the key from the full amount of data. We discuss the advantages and disadvantages of each approach and describe ways to operate with them. For our ground station, the secret key rate turned out to be 20% less when the detection-efficiency mismatch was at 1:2 and we used the optimal way to calculate the key. 10.18721/JPM.163.138 004.056.55 quantum key distribution satellite-to-ground channel modeling detection-efficiency mismatch https://physmath.spbstu.ru/article/2023.68.38/
CNF RUS 221-226 0000-0003-4206-4136 Southern Federal University Saenko Aleksandr avsaenko@sfedu.ru
Taganrog, Russian Federation
 Southern Federal University Bilyk German bilyk@sfedu.ru
Taganrog, Russian Federation
 Southern Federal University Malyukov Sergey spmalyukov@sfedu.ru
Taganrog, Russian Federation
 Research of the photoelectric parameters of ZnO/Cu2O heterojunction solar cells Theoretical modeling of ZnO/Cu2O heterojunction solar cells has been carried out to optimize its structure and increase the energy conversion efficiency. The effect of the thickness and defect concentration in Cu2O and ZnO layers on the efficiency of a solar cell is studied. It was found that the optimal thickness of the Cu2O and ZnO layers should be 5 µm and 20 nm, respectively. It is shown that to obtain a high efficiency of a solar cell, the defect concentration (copper vacancies) in the Cu2O layer should be 1015 cm−3, and the defect concentration (oxygen vacancies) in the ZnO layer should be 1019 cm−3. The maximum efficiency of a solar cell based on ZnO/Cu2O is 6 %. The experimental formation of Cu2O and ZnO layers by magnetron sputtering at room temperature has been carried out, their surface morphology has been studied, and experimental samples of oxide solar cells have been created. 10.18721/JPM.163.139 621.383 numerical simulation oxide semiconductors layer thickness defect concentration solar cell photovoltaic parameters magnetron sputtering https://physmath.spbstu.ru/article/2023.68.39/
CNF RUS 227-231 Mozhayko Anna annaanna-1996@mail.ru Gerashchenkov Dmitry gda.spb@gmail.com Davydov Vadim davydov_vadim66@mail.ru Theoretical and experimental study of laser treatment of nickel using a diode laser In recent years, laser surface treatment (LST) has widely used to improve the properties of nickel coatings. LST has many advantages, however, different coating thicknesses require different modes, which can be selected using simulation. In this study, the modeling process is considered and an experiment is conducted to study the effect of LST process parameters on melt pool sizes. The aim of this research was therefore to reveal the dependence of the melt pool depth, namely the thickness of the layer in which the mixing process of components takes place, on the scan speed using a diode laser. With LST by diode laser, the thickness of the processed layer reaches about 500 μm, and the width of the processed surface is about 6 mm. 10.18721/JPM.163.140 621.78+001.891.573 laser surface treatment thermal modeling finite element method nickel melt pool cold spraying https://physmath.spbstu.ru/article/2023.68.40/
CNF RUS 232-236 National Research Tomsk State University Khomyakova Kristina homiackowa.kristina@yandex.ru
Tomsk, Russian Federation
 National Research Tomsk State University Deeb Hazem deeb.hazem.syr@gmail.com
Tomsk, Russian Federation
 0000-0002-4029-8353 National Research Tomsk State University Lozovoy Kirill
Tomsk, Russian Federation
 National Research Tomsk State University Kokhanenko Andrey kokh@mail.tsu.ru
Tomsk, Russian Federation
 Modeling the characteristics of avalanche photodiodes based on Ge/Si In this article, the planar structure of an avalanche photodiode based on Ge/Si is designed. The dependences of the gain and bandwidth on the bias voltage for different thicknesses of the absorption and multiplication layers of an avalanche photodiode based on Ge/Si are presented. 10.18721/JPM.163.141 621.383.523 optoelectronics avalanche photodiode impact ionization planar structure gain-bandwidth product https://physmath.spbstu.ru/article/2023.68.41/
CNF RUS 237-241 0000-0001-7319-8001 National Research Technological University (MISiS) Filyaev Alexandr a.filiaev@misis.ru
Moscow, Russian Federation
 0000-0002-6030-2532 National Research Technological University (MISiS) Losev Anton losev.av@misis.ru
Moscow, Russian Federation
 0000-0002-3252-2984 National Research Technological University (MISiS) Zavodilenko Vladimir v.zavodilenko@misis.com
Moscow, Russian Federation
 0000-0001-8865-556X National Research Technological University (MISiS) Pavlov Igor pavlov.id@misis.ru
Moscow, Russian Federation
 Evaluation of quantum efficiency of InGaAs/InP single-photon detectors in quantum key distribution systems In this paper an important parameter of single-photon detectors, such as quantum efficiency, is considered. Errors in determining this parameter lead to significant errors in the parameters of a quantum key distribution system, where such detectors find their application. Three models are proposed to estimate photon detection efficiency or quantum efficiency and their main advantages and disadvantages are considered. A special experimental setup has been developed to carry out validation of the presented models on experimental data. It was found that at low values of laser radiation power the dependent and empirical models give good results, and the independent model is not applicable. 10.18721/JPM.163.142 53.082.52; 621.3.084.2 quantum efficiency single-photon detector quantum key distribution systems https://physmath.spbstu.ru/article/2023.68.42/
CNF RUS 242-247 0000-0002-3252-2984 National Research Technological University (MISiS) Zavodilenko Vladimir v.zavodilenko@misis.com
Moscow, Russian Federation
 0000-0001-7319-8001 National Research Technological University (MISiS) Filyaev Alexandr a.filiaev@misis.ru
Moscow, Russian Federation
 0000-0002-6030-2532 National Research Technological University (MISiS) Losev Anton losev.av@misis.ru
Moscow, Russian Federation
 0000-0001-8865-556X National Research Technological University (MISiS) Pavlov Igor pavlov.id@misis.ru
Moscow, Russian Federation
 Investigation on the effects of the multiplication area shape on the dark count rate in InGaAs/InAlAs single-photon avalanche photodiodes In this paper the influence of the multiplication area shape on the dark count rate (DCR) of InGaAs/InAlAs single-photon avalanche photodiodes (SPADs) is discussed. This study is carried out within the framework of SPAD design parameter optimization. The diode structure has been simulated in the T-CAD calculation environment. The structure with three levels of multiplication area with a smooth transition is the most optimal one. This structure will achieve higher quantum efficiency during the diode operation. 10.18721/JPM.163.143 53.082.52; 621.3.084.2 multiplication area dark count rate single-photon avalanche photodiodes single-photon detector https://physmath.spbstu.ru/article/2023.68.43/
CNF RUS 243-253 Mendeleev Russian University of Chemistry and Technology Kalyakin Timofey t.s.kalyakin@gmail.com
Moscow, Russian Federation
 Mendeleev Russian University of Chemistry and Technology Danilov Egor danilovegor1@gmail.com
Moscow, Russian Federation
 Optical extinction and electrical conductivity measurements as express techniques to estimate concentrations of graphene suspensions This article explores a method for determining the concentration of graphene dispersion using the integral optical technique based on the Beer-Lambert-Bouguer law for direct ultrasonic exfoliation method. The results showed nonlinear dependence of conductivity on concentration, indicating fundamental differences in the mechanism of exfoliation at different solid phase concentrations. Graphene dispersions in ethylene glycol also exhibited low transmittance in the visible region of the spectrum, which requires the use of other research methods for higher concentrations. Extinction coefficients were determined to calculate the concentration of graphene in the dispersion, which allows for the calculation of light absorption in the solution at a certain concentration and beam path length. The obtained results can be useful for further use of graphene in optoelectronic devices. Additionally, the concentration of few-layered graphene particles was calculated in the suspension obtained by liquid-phase exfoliation method with an initial graphite concentration of 6 mg/ml. 10.18721/JPM.163.144 544.774.3; 544.77.03; 544.77.051.1; 661.666.2 graphene Beer-Lambert-Bouguer law concentration exfoliation https://physmath.spbstu.ru/article/2023.68.44/
CNF RUS 254-257 Ivanishcheva Alexandra starnikova@sfedu.ru 0000-0003-3725-6053 Petrov Viktor vvpetrov@sfedu.ru Research of temperature dependence of conductivity of arrays of ZnO/Au and ZnO/SnO2 nanorods under the influence of combined visible and ultraviolet irradiation Arrays of ZnO nanorods of vertical orientation were synthesized by hydrothermal method on quartz substrates. The nanorods had a length of 500‒800 nm and an average cross-sectional size of 40–80 nm. On top of ZnO nanorods, by vacuum thermal evaporation and subsequent annealing at 300 °C, gold (Au) nanoclusters with average sizes of 9 ± 1 nm and 4 ± 0.5 nm and tin oxide (SnO2) nanoclusters with average sizes of 30 ± 5 nm and 15 ± 3 nm. To fabricate resistive sensor elements, V-Ni contact metallization was formed over nanorods by vacuum thermal evaporation. The study of the electrophysical characteristics of arrays of ZnO/Au nanorods showed that the simultaneous effect of temperature and radiation from a LED with a wavelength of 400 nm leads to almost temperature independence of the conductivity of sensor elements. 10.18721/JPM.163.145 504.064.3 ZnO nanorods electrophysical properties ultraviolet irradiation https://physmath.spbstu.ru/article/2023.68.45/
CNF RUS 258-263 0000-0003-4164-178X Moscow Institute of Physics and Technology (National Research University) Kornyushin Denis kornyushin.d@phystech.edu
Moscow, Russian Federation
 0000-0001-9780-9137 Moscow Institute of Physics and Technology (National Research University) Musaev Andrey
Moscow, Russian Federation
 Moscow Institute of Physics and Technology (National Research University) Vershinina Olesya seraia.ov@phystech.edu
Dolgoprudny, Moscow region, Russian Federation
 Moscow Institute of Physics and Technology (National Research University) Ivanov Mattew ms.ivanov@phystech.edu
Dolgoprudny, Moscow region, Russian Federation
 Moscow Institute of Physics and Technology (National Research University) Kameneva Ekaterina kameneva.ei@phystech.edu
Dolgoprudny, Moscow region, Russian Federation
 Moscow Institute of Physics and Technology (National Research University) Volkov Ivan volkov.ia@mipt.ru
Dolgoprudny, Moscow region, Russian Federation
 Moscow Institute of Physics and Technology (National Research University) Efimov Alexey efimov.aa@mipt.ru
Dolgoprudny, Moscow region, Russian Federation
 Ivanov Victor ivanov.vv@mipt.ru Effect of the thickness of plasmonic gold nanostructures on the surface enhanced Raman scattering In this work, we studied the influence of the thickness of plasmonic nanostructures composed of gold nanoparticles on the intensity of lines in SERS spectra of methylene blue (MB), 1,2 bis(4 pyridyl)ethylene (BPE), and malachite green (MG) used as analytes. Plasmonic nanostructures were patterned on alumina substrates by dry aerosol printing with spark discharge synthesized gold nanoparticles (mean size 9.5 nm) and represented layers 3 mm × 3 mm in size with the thickness of about 0.3, 0.4, and 0.5 μm. The enhancement factor was estimated at 5.5×106 for MB, 8.0×106 for BPE, and 2.1×107 for MG by using SERS spectra measured on nanostructures with the optimal thickness of 0.4 μm. 10.18721/JPM.163.146 539.231, 538.97 nanoparticles gold spark gas-discharge focused deposition plasmonic nanostructures (PN) SERS https://physmath.spbstu.ru/article/2023.68.46/
CNF RUS 264-268 Shepeleva Anastasia eduard.shepelev.67@mail.ru 0000-0001-9602-7221 Research Institute of Electronic and Mechanical Devices Gurin Sergey
Penza, Russian Federation
 0000-0001-9319-2475 Research Institute of Electronic and Mechanical Devices Novichkov Maksim
Penza, Russian Federation
 0009-0005-5656-4918 Research Institute of Electronic and Mechanical Devices Zuev Vyacheslav
Penza, Russian Federation
 0009-0006-3140-5897 Research Institute of Electronic and Mechanical Devices Ryzhov Alexandr
Penza, Russian Federation
 0009-0003-1945-5646 Research Institute of Electronic and Mechanical Devices Deryabin Denis
Penza, Russian Federation
 Gas sensors based on zinc oxide nanorods with colloid quantum dots A design and technological solution for increasing the temporal stability of gas sensors based on the nanorods-colloidal quantum dots structure is presented. For this purpose, zinc oxide nanorods oriented predominantly to the surface normal were grown by the hydrothermal method. Silicon nitride, followed by etching to the level of zinc oxide colloidal dots in an inductively coupled plasma using a gas mixture based on sulfur hexafluoride, was deposited onto the resulting structure by RF magnetron sputtering. Through accelerated aging testing, it has been found that silicon carbide protected zinc oxide nanorods exhibit greater temporal stability due to less surface oxidation resulting in a reduction in specific surface area. Silver nanoparticles with a plasmon effect were deposited onto the resulting structure by centrifugation. 10.18721/JPM.163.147 621.317.39.084.2 gas-sensitive material nanorods optical radiation silver nanoparticles https://physmath.spbstu.ru/article/2023.68.47/
CNF RUS 269-272 0000-0001-9319-2475 Research Institute of Electronic and Mechanical Devices Novichkov Maksim
Penza, Russian Federation
 0000-0001-9602-7221 Research Institute of Electronic and Mechanical Devices Gurin Sergey
Penza, Russian Federation
 0000-0002-7053-4775 Research Institute of Electronic and Mechanical Devices Nesterov Sergey
Penza, Russian Federation
 0000-0002-2088-5497 Penza State University Shelakhaev Dmitry
Penza, Russian Federation
 Pecherskaya Ekaterina pea1@list.ru Shepeleva Anastasia eduard.shepelev.67@mail.ru Study of deposition of heterogeneous structures on ion-exchange membranes The process of a heterogeneous catalytic coating formation on the ion-exchange membranes surface was studied in this work. It is determined that the use of the chemical deposition method results in a highly porous coating, but with low strength and durability. A combined method for obtaining a heterogeneous catalytic coating is proposed, which includes the formation of adsorption centers by thermal vacuum spraying and the growth of the bulk of the catalyst by chemical deposition. 10.18721/JPM.163.148 544.478-03 heterogeneous structure ion-exchange membrane electrolysis hydrogen production catalyst deposition https://physmath.spbstu.ru/article/2023.68.48/
CNF RUS 273-277 ITMO University Abramov Artem artem.abramov@metalab.ifmo.ru
St. Petersburg, Russian Federation
 ITMO University Chestnov Igor igor.chestnov@metalab.ifmo.ru
St. Petersburg, Russian Federation
 ITMO University Iorsh Ivan i.iorsh@metalab.ifmo.ru
St. Petersburg, Russian Federation
 ITMO University Kravtsov Vasily vasily.kravtsov@metalab.ifmo.ru
St. Petersburg, Russian Federation
 Localization microscopy of single photon emitters in locally strained monolayer semiconductor Integration of single photon emitters with nanophotonic structures on a chip is key for the development of future quantum optoelectronic devices. Here we study the formation of single photon emitters in a WSe2 monolayer by local nanoindentation with an atomic force microscope probe. Using the bichromatic photoluminescence-imaging approach, we define the spatial locations of single photon emitters with deep sub-wavelength accuracy. 10.18721/JPM.163.149 538.911 single photon emitter two-dimensional materials nanophotonics quantum optics https://physmath.spbstu.ru/article/2023.68.49/
CNF RUS 278-283 0000-0003-3589-8941 Peter the Great St. Petersburg Polytechnic University Boudjemila Linda
St. Petersburg, Russian Federation
 Davydov Vadim davydov_vadim66@mail.ru Ioffe Institute Nenashev Grigorii virison95@gmail.com
St. Petersburg, Russian Federation
 0000-0001-5449-4446 Ioffe Institute Aleshin Andrey aleshin@transport.ioffe.ru
St. Petersburg, Russian Federation
 Ioffe Institute Malyshkin Vladislav mal@gromco.com
St. Petersburg, Russian Federation
 Exciton dynamics characterization by electrochemical impedance spectroscopy of CsPbBr3(I3) perovskite nanocrystals for photovoltaic application The deposition of an additional layer of nanoparticles is a widely used method for improving the optical and electrical characteristics of semiconductor solar cells (SCs). We present the results of studies of impedance spectroscopy (IS) in operating sandwich structures based on films of nanocrystals (NC) of inorganic perovskites of lead halides CsPbI3 and CsPbBr3. These last are characterized by the presence of extensive phonon disorder in the former. This phonon disorder gives rise to unique electron–phonon coupling and dielectric responses. The perovskite material is deposited on the surface of a solar cell based on crystalline silicon (c-Si). The IS results show that under identical conditions, the Nyquist plots for both structures are in good agreement with the equivalent circuit model represented in continued line as a fit curve. It represents series resistance, recombination resistance and geometric capacitance, respectively, which arise due to charge accumulation, charge transfer resistance and/or additional interfacial electronic states. It is found, that adding of the CsPbI3 layer enhances the photo response under bias, but such a photo response leads to a decrease in dc conductivity. On the contrary, adding of the CsPbBr3 layer blocks the photo response under bias but slightly improves the photo response for the zero bias. The obtained results provide the way to improve the performance of next generation of tandem c-Si SCs with perovskite NCs upper layers. 10.18721/JPM.163.150 539.1 impedance spectroscopy perovskites nanocrystals crystalline silicon https://physmath.spbstu.ru/article/2023.68.50/
CNF RUS 284-288 LLC “QRate” Sodnomay Amgalan a.sodnomay@goqrate.com
Moscow, Russian Federation
 LLC “QRate” Mayboroda Vladimir v.mayboroda@goqrate.com
Moscow, Russian Federation
 National Research University “Higher School of Economics” Kovalyuk Vadim lpkgarage@yandex.ru
Moscow, Russian Federation
 Moscow Pedagogical State University Golikov Alexander gad_92@inbox.ru
Moscow, Russian Federation
 National Research University “Higher School of Economics” Chulkova Galina gchulkova@hse.ru
Moscow, Russian Federation
 Goltsman Grigory goltsman@rplab.ru Shakhovoy Roman r.shakhovoy@goqrate.com Passive optical scheme for BB84 protocol with polarization encoding on a silicon nitride platform Quantum key distribution is a technology that promises unconditional security for protecting data. However, despite being based on the laws of quantum physics, its practical implementation may have critical vulnerabilities. One way to address this is to passively prepare quantum states. In our work, we demonstrate a passive optical scheme for the BB84 protocol with polarization encoding. We use a finite-difference time-domain method to simulate the elements of this scheme on the silicon nitride platform. Our simulations suggest that the polarization extinction ratio will be more than 20