2304-9782, 2618-8686, 2405-7223
St. Petersburg Polytechnic University Journal: Physics and Mathematics
16
3.1
2023
1-479
CNF
RUS
10-15
Voronezh State University of Engineering Technology
Kim
Kseniya
kmkseniya@yandex.ru
Voronezh, Russian Federation
Voronezh State University of Engineering Technology
Niftaliev
Sabukhi
sabukhi@gmail.com
Voronezh, Russian Federation
Voronezh State University of Engineering Technology
Kotov
Gennady
giktv@mail.ru
Voronezh, Russian Federation
Voronezh State University of Engineering Technology
Lenshin
Alexander
lenshinas@mail.ru
Voronezh, Russian Federation
The features in the formation of oxide porous structures based on SiO2–SnOх
Substrates of the present gas-sensible sensors are fabricated from the porous silicon characterized by a high specific surface. In order to increase stability of the operation and enhance selectivity of these sensors their surface can be covered with metal-containing films. In this work the film of tin oxide was deposited on the surface of porous silicon; this films is characterized by certain advantages such as a wide band gap, low price, high sensibility and in-toxicity of the material. Porous silicon was obtained by electrochemical anodizing of single-crystalline silicon (grade KEF (100)). Porous silicon samples werethen coated with the films of tin oxide applying thermal evaporation in vacuum. When metal-oxide film was deposited on porous silicon its surface became more textured and in addition formation of the great amount of nano-scale granules could be observed. Optical properties of the samples were studied by UV-spectroscopy. The presence of the oxidized tin was found on the surface of porous silicon in the form of SnO. It was shown that thermal deposition of tin on the surface of porous silicon resulted in the change of position and shape of the photoluminescence band. Results presented in the work demonstrated that thermal evaporation in vacuum can be successfully applied for obtaining of the tin oxide films on porous silicon. The elaborated nanocomposites can be used for the fabrication of sensors for gas detection.
10.18721/JPM.163.101
546.3-126:544.2
porous silicon
tin oxide
thermal evaporation in vacuum
photoluminescence
https://physmath.spbstu.ru/article/2023.68.1/
CNF
RUS
16-20
M.N. Mikheev Institute of Metal Physics, UB RAS
Chistyakov
Vasiliy
wchist@imp.uran.ru
Ekaterinburg, Russian Federation
M.N. Mikheev Institute of Metal Physics, UB RAS
Perevalova
Aleksandra
domozhirova@imp.uran.ru
Ekaterinburg, Russian Federation
M.N. Mikheev Institute of Metal Physics; Ural Federal University
Fominykh
Bogdan
fominykh@imp.uran.ru
Ekaterinburg, Russian Federation
National Cheng Kung University
Huang
J. C. A.
jcahuang@mail.ncku.edu.tw
Tainan, Taiwan
M.N. Mikheev Institute of Metal Physics; Ural Federal University
Marchenkov
Vyacheslav
Ekaterinburg, Russian Federation
Hall Effect in “size” topological insulators Bi2Se3
The Hall resistance ρxy of thin films of the Bi2Se3 topological insulator with a thickness from 10 nm to 75 nm at a temperature of 4.2 K and in magnetic fields up to 10 T has been measured. The size effect was found, i.e. dependence of the Hall resistance and the Hall coefficient on the thickness of the studied films. Using a single-band model, the values of the current carrier concentration and their mobility are calculated, which also change with a change in the thickness of the samples.
10.18721/JPM.163.102
669.765:537.312.6
topological insulators
size effect
Hall Effect
thin films
https://physmath.spbstu.ru/article/2023.68.2/
CNF
RUS
21-25
Smirnova
Maria
masha_19957@mail.ru
Bachurin
Vladimir
vibachurin@mail.ru
P.G. Demidov Yaroslavl State University
Pukhov
Denis
puhov2005@ya.ru
Yaroslavl, Russian Federation
Mazaletsky
Leonid
boolvinkl@ya.ru
P.G. Demidov Yaroslavl State University
Lebedev
Michael
m.e.lebedev@ya.ru
Yaroslavl, Russian Federation
Churilov
Anatoly
abchurilov@mail.ru
Development of the surface morphology of germanium upon irradiation with gallium ions
Experimental studies of the germanium surface morphology development under irradiation with a focused gallium ion beam at different angles of incidence and fluences are presented. It is shown that a nanoporous structure formes in the near-surface layer starting with a dose of 5·1015 cm‒2.This leads to the formation of a sponge-like morphology with a wall thickness of about 20 nm and a depth up to 150 nm with an increasing dose. Changing the ion beam incidence angle with respect to the surface normal leads to a tilt of the pores walls in the collinear direction.
10.18721/JPM.163.103
537.534
semiconductor
Ge
ion irradiation
surface morphology
pores
sponge-like relief
angle dependence
dose dependence
https://physmath.spbstu.ru/article/2023.68.3/
CNF
RUS
26-30
0000-0001-7499-0578
Institute of High Current Electronics, Siberian Branch of RAS
Kozhevnikov
Vasily
Vasily.Y.Kozhevnikov@ieee.org
Institute of High Current Electronics, Siberian Branch, RAS
Oskirko
Vladimir
oskirkovo@gmail.com
Tomsk, Russian Federation
Institute of High Current Electronics, Siberian Branch, RAS
Rabotkin
Sergey
rabotkin@yandex.ru
Tomsk, Russian Federation
Institute of High Current Electronics, Siberian Branch, RAS
Pavlov
Artem
apel4pap@gmail.com
Tomsk, Russian Federation
Institute of High Current Electronics, Siberian Branch, RAS
Semenov
Vyacheslav
semenofvjacheslav@gmail.com
Tomsk, Russian Federation
Soloviev
Andrei
asus_work@mail.ru
Institute of High Current Electronics, Siberian Branch, RAS
Grenadyorov
Alexander
1711sasha@mail.ru
Tomsk, Russian Federation
Institute of High Current Electronics, Siberian Branch, RAS
Zakharov
Alexander
zare17@yandex.ru
Tomsk, Russian Federation
Novel methods for synthesizing high-quality thin films through short and ultrashort high-power pulsed magnetron sputtering
The present study focuses on investigating the increase in average ion current density to the substrate in short and ultra-short high-power impulse magnetron sputtering (HiPIMS). Theoretical and experimental evidence demonstrates that, while maintaining the average power level of HiPIMS, the ultra-short mode enables a more than threefold increase in the ion current density of the target material onto the substrate. These findings hold promise for enhancing the quality of HiPIMS ion-plasma vapor deposition (IPVD) coatings.
10.18721/JPM.163.104
533.9.02
high-power impulse magnetron sputtering
plasma vapor deposition
thin films
https://physmath.spbstu.ru/article/2023.68.4/
CNF
RUS
31-35
National Research University of Electronic Technology
Vasilevsky
Pavel
pavelvasilevs@yandex.ru
Moscow, Russian Federation
National Research University of Electronic Technology
Savelyev
Mikhail
nanonlin@yandex.ru
Moscow, Russian Federation
Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry RAS
Tolbin
Alexander
tolbin@inbox.ru
Moscow, Russian Federation
I.M. Sechenov First Moscow State Medical University
Ryabkin
Dmitrii
ryabkin@bms.zone
Moscow, Russian Federation
National Research University of Electronic Technology
Gerasimenko
Alexander
gerasimenko@bms.zone
Moscow, Russian Federation
Spatial self-phase modulation of light in liquid dispersions based on conjugates of phthalocyanines and carbon nanotubes
The growth in the power of laser systems makes the problem of protecting photosensitive elements of optical systems and visual organs from high-intensity radiation an urgent issue. This work explores the possibility of optical limitation of quasi-continuous laser radiation using liquid dispersions of conjugates of phthalocyanines and carbon nanotubes. It has been found that the laser beam passes through the studied materials unchanged at low power (< 100 mW), and then begins to expand with the appearance of an interference pattern. The use of a limiting diaphragm makes it possible to block part of the laser radiation, which leads to the attenuation of the laser radiation passed through the “sample-diaphragm” system. This phenomenon can be used to protect light-sensitive elements in optical systems.
10.18721/JPM.163.105
535.015
laser radiation
carbon nanotubes
phthalocyanines
spatial self-phase modulation
optical limiting
https://physmath.spbstu.ru/article/2023.68.5/
CNF
RUS
36-40
ITMO University
Buzakov
Mikhail
mikhail.buzakov@metalab.ifmo.ru
St. Petersburg, Russian Federation
ITMO University
Smirnov
Vyacheslav
obieshkaplayer@gmail.com
St. Petersburg, Russian Federation
ITMO University
Sennikova
Daria
daria.sennikova@yandex.ru
St. Petersburg, Russian Federation
ITMO University
Molodtsova
Anastasia
a.molodtsova@metalab.ifmo.ru
St. Petersburg, Russian Federation
ITMO University
Rozenblit
Alina
alina.rozenblit@metalab.ifmo.ru
St. Petersburg, Russian Federation
University of Amsterdam
Porvatov
Vadim
eighonet@gmail.com
Amsterdam, Netherlands
ITMO University
Burmistrov
Oleg
oleg.burmistrov@metalab.ifmo.ru
St. Petersburg, Russian Federation
ITMO University
Puhtina
Ekaterina
ekaterina.puhtina@metalab.ifmo.ru
St. Petersburg, Russian Federation
ITMO University
Dmitriev
Alexey
alexey.dmitriev@metalab.ifmo.ru
St. Petersburg, Russian Federation
ITMO University
Olekhno
Nikita
nikita.olekhno@metalab.ifmo.ru
St. Petersburg, Russian Federation
Crystallization of robotic swarms in a parabolic potential
Large ensembles of particles converting their internal energy resources into mechanical motion form a class of systems denoted as active matter. Such systems demonstrate a wide range of interesting phenomena, including self-organization and phase transitions emerging in biological and artificial active matter. One of the popular platforms for experimental realization of such systems are swarms of simple moving robots. In the present work, we consider a swarm of self-propelled robots with a stadium-like shape placed in a parabolic potential and address the dynamics of crystallization in this non-equilibrium system. To quantify the formation of hexagonal crystals, we evaluate the average cluster size and six-fold parameter characterizing the hexatic ordering directly from the experimental data.
10.18721/JPM.163.106
544.015.4
crystallization
self-organization
active matter
swarm robotics
self-propelled particles
https://physmath.spbstu.ru/article/2023.68.6/
CNF
RUS
41-46
Balakirev
Sergey
sbalakirev@sfedu.ru
Kirichenko
Danil
dankir@sfedu.ru
Shandyba
Nikita
shandyba.nikita@gmail.com
Chernenko
Natalia
nchernenko@sfedu.ru
Solodovnik
Maxim
solodovnikms@sfedu.ru
Droplet epitaxy of site-controlled In/GaAs(001) nanostructures with a variable distance: experiments and simulations
This paper presents a complex experimental and theoretical study of the droplet epitaxial growth of In/GaAs(001) nanostructures on patterned surfaces. We observe that holes formed after GaAs overgrowth of surfaces treated with a focused ion beam are the preferred centers for the nucleation of In droplets at any temperature in a range from 250 °C to 350 °C. Good selectivity and localization of droplets are achieved along a square perimeter of holes located at a distance from 0.5 to 4.2 µm apart. However, lower temperatures are required to provide filling of more holes and formation of an ordered array of droplet pairs. Using kinetic Monte Carlo simulations, we demonstrate growth conditions which allow filling of all holes located at variable distances in a range from 20 to 340 nm and avoiding unnecessary nucleation beyond the holes.
10.18721/JPM.163.107
538.9.
droplet epitaxy
focused ion beams
patterned surfaces
Monte Carlo method
https://physmath.spbstu.ru/article/2023.68.7/
CNF
RUS
47-52
St. Petersburg Electrotechnical University "LETI"
Chumanov
Ivan
chumanov2000@yandex.ru
St. Petersburg, Russian Federation
St. Petersburg Electrotechnical University "LETI"
Firsov
Dmitrii
d.d.firsov@gmail.com
St. Petersburg, Russian Federation
Ioffe Institute
Solov'ev
Viktor
vasol@beam.ioffe.ru
St. Petersburg, Russian Federation
Ioffe Institute
Chernov
Mikhail
chernov@beam.ioffe.ru
St. Petersburg, Russian Federation
St. Petersburg Electrotechnical University "LETI"
Komkov
Oleg
oleg_sergeevich@mail.ru
St. Petersburg, Russian Federation
Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy
The paper presents the results of studies of InSb/In(Ga,Al)As/GaAs heterostructures using the photoreflectance method. Based on the results of the work, the temperature dependences of the observed transition energies were obtained, the values of the miniband width and spin-orbit splitting were determined.
10.18721/JPM.163.108
538.958
heterostructures
superlattices
quantum wells
photoreflectance method
semiconductors
FTIR spectroscopy
https://physmath.spbstu.ru/article/2023.68.8/
CNF
RUS
53-58
Lakhina
Ekaterina
lakhina@sfedu.ru
Shandyba
Nikita
shandyba.nikita@gmail.com
Chernenko
Natalia
nchernenko@sfedu.ru
Kirichenko
Danil
dankir@sfedu.ru
Balakirev
Sergey
sbalakirev@sfedu.ru
Solodovnik
Maxim
solodovnikms@sfedu.ru
Formation of symmetrical nanoholes by local droplet etching for site-controlled growth of single quantum dots
In this paper, we study local etching of the GaAs(001) surface by Ga droplets at various technological conditions. Effects of the deposition temperature and thickness, interruption time, annealing temperature and arsenic background pressure are discussed. A minimum deposition thickness of 1.5 monolayer of Ga is found to be sufficient to etch the GaAs surface. We demonstrate that an increase in the annealing temperature leads to a decrease in the hole depth and an increase in their diameter. For the first time, we obtain symmetrical nanoholes of pyramidal shape on the GaAs(001) surface with a low surface density (~ 1·108 cm‒2 and below) allowing subsequent formation of single quantum dots for high-efficiency quantum photonic devices.
10.18721/JPM.163.109
538.9.
epitaxy
local droplet etching
gallium arsenide
A3B5
https://physmath.spbstu.ru/article/2023.68.9/
CNF
RUS
59-63
ITMO University
Tatarinov
Dmitry
dmitry.tatarinov@metalab.ifmo.ru
St. Petersburg, Russian Federation
0000-0002-1793-6812
Pushkarev
Anatoly
anatoly.pushkarev@metalab.ifmo.ru
0000-0002-9257-6183
Makarov
Sergey
s.makarov@metalab.ifmo.ru
Optimization of triple-cation perovskite thin films by PEAI additive
This work presents an additive engineering approach to prepare structurally stable highly crystalline triple-cation and mixed-anion perovskite thin film by using 5 mol% doping of perovskite solution with phenethylammonium iodide (PEAI). Such an additive provides increase in grain size up to 20 % and preserves surface morphology of non-encapsulated films for at least 6 months at ambient conditions. Stability experiments showed excellent results for films with PEAI additive, which confirmed by X-ray diffraction measurements. The additive strategies have great potential to improve the power conversion efficiency and the long-term stability of the perovskite solar cell suitable for commercialization.
10.18721/JPM.163.110
53.093
halide perovskites
additive engineering
surface morphology
https://physmath.spbstu.ru/article/2023.68.10/
CNF
RUS
64-68
Chernenko
Natalia
nchernenko@sfedu.ru
National Research University ‘Higher School of Economics”
Makhov
Ivan
imahov@hse.ru
Balakirev
Sergey
sbalakirev@sfedu.ru
Kirichenko
Danil
dankir@sfedu.ru
Shandyba
Nikita
shandyba.nikita@gmail.com
Kryzhanovskaya Natalia V.
Natalia
nkryzhanovskaya@hse.ru
Solodovnik
Maxim
solodovnikms@sfedu.ru
Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates
In this work we present the results of experimental studies of the InAs/GaAs quantum dot formation in subcritical growth modes on nanopatterned substrates. For this purpose, we used two ways for surface patterning: local droplet etching and modified oxide desorption technique. We have experimentally shown that both methods allow in situ formation of nanosized pits (or nanoholes) on the surface, but their shape and density is quite different. We also have shown that the using of growing surface nanopatterning allows both to obtain self-assembled nanostructures (including QD) at subcritical deposition thicknesses and to localize its formation in nanoholes with high selectivity and suppressing a wetting layer formation. In addition, our results have also shown that the nanohole character on a structured surface (shape, size, density) has a key effect on both the processes of nanostructure nucleation and growth and their structural and optical properties, which should also be taken into account when developing methods for creating heterostructures with regular arrays of quantum dots.
10.18721/JPM.163.111
538.9
quantum dot
A3B5
wetting layer
nanopatterning
molecular beam epitaxy
nanostructure
self-organization
https://physmath.spbstu.ru/article/2023.68.11/
CNF
RUS
69-73
Institute of Nanotechnologies of Microelectronics of the RAS
Shibalov
Maksim
maxshibalov@gmail.com
Moscow, Russian Federation
Institute of Nanotechnologies of Microelectronics of the RAS
Sirotina
Anna
ansipe@mail.ru
Moscow, Russian Federation
Institute of Nanotechnologies of Microelectronics of the RAS
Pershina
Elena
squirrel_red@mail.ru
Moscow, Russian Federation
Institute of Nanotechnologies of Microelectronics of the RAS
Shibalova
Anastasia
shibalova.a@inme-ras.ru
Moscow, Russian Federation
Institute of Nanotechnologies of Microelectronics of the RAS
Mumlyakov
Alexander
mumlyakov.a@inme-ras.ru
Moscow, Russian Federation
Institute of Nanotechnologies of Microelectronics of the RAS
Porokhov
Nikolay
porokhov.n@inme-ras.ru
Moscow, Russian Federation
Tarkhov
Michael
tmafuz@mail.ru
Properties of ultrathin epitaxial NbNx film on C-cut sapphire
Here we report on the results of obtaining and study of epitaxial ultrathin superconductive films of niobium nitride grown on a C-plane sapphire substrate. The films were deposited from metal-organic precursor using the plasma-enhanced atomic layer deposition. We employed X-ray diffraction, and high-resolution transmission electron microscopy techniques to study the structural properties of the films. We also determined the quasiparticle diffusion constant, the coherence length, the superconducting transition temperature, the critical current density, and the non-uniformity of the resistance distribution of niobium nitride films.
10.18721/JPM.163.112
538.945
atomic layer deposition
niobium nitride
epitaxy
superconductivity
critical current density
https://physmath.spbstu.ru/article/2023.68.12/
CNF
RUS
74-78
Kirichenko
Danil
dankir@sfedu.ru
Chernenko
Natalia
nchernenko@sfedu.ru
Shandyba
Nikita
shandyba.nikita@gmail.com
Balakirev
Sergey
sbalakirev@sfedu.ru
Solodovnik
Maxim
solodovnikms@sfedu.ru
Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology
In this paper we presents the results of studying the molecular arsenic flux effect on the processes of native oxide thermal desorption and the resulting surface morphology of GaAs(001) substrates. We have shown that the exposure of GaAs under As flux at the stage of oxide removal significantly modulates the decomposition of native oxide and its chemical interaction with substrate materials. Based on the obtained experimental results and analysis of possible chemical reaction in this system we have shown that in the presence of arsenic molecules on the surface, free gallium atoms bind with it and no longer participate in the decomposition of native oxide components. This leads to additional decomposition of the substrate materials as a result of its etching. As a result, nanoholes of lower density, but larger in size, are formed on the surface. We have also shown that a decrease in the oxide thickness leads to a decrease in the density and dimensions of the nanoholes.
10.18721/JPM.163.113
538.9
native oxide desorption
gallium arsenide
native oxide
molecular beam epitaxy
A3B5
https://physmath.spbstu.ru/article/2023.68.13/
CNF
RUS
79-83
Shandyba
Nikita
shandyba.nikita@gmail.com
Kirichenko
Danil
dankir@sfedu.ru
Chernenko
Natalia
nchernenko@sfedu.ru
Alferov University
Sharov
Vladislav
vl_sharov@mail.ru
St. Petersburg, Russian Federation
Balakirev
Sergey
sbalakirev@sfedu.ru
Solodovnik
Maxim
solodovnikms@sfedu.ru
Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth
Experimental studies of the effect of dose and accelerating voltage during ion beam treatment of the Si(111) surface on the substrate structure and growth processes of GaAs nanowires have been carried out. For this purpose, arrays of areas were created on the Si(111) surface by ion beam treatment using an all-over template with variation of accelerating voltage in the range of 10–30 kV and dose in the range of 0.01–10.4 pC/µm2. Based on the results of the modified surface study after GaAs nanowire growth, the dependences of the main nanowire characteristics (density, length and diameter) on the ion beam dose were obtained. It is shown that the main influence on the formed nanowire characteristics is exerted by the dose of embedded Ga-ions. By changing the value of this ion beam parameter together with the high-temperature annealing, the chemical composition and morphology of the surface silicon oxide layer can be locally controlled, thereby predetermining the parameters of the growing nanowire array. In this case, the accelerating voltage, and, hence, the distribution of ions in the near-surface layer, is of secondary importance during all-over template processing. This is confirmed by the formation of identical nanowire arrays at different accelerating voltages since the growth of nanowires occurs under the same conditions on the Si surface after the annealing stage (as confirmed by Raman spectroscopy results).
10.18721/JPM.163.114
538.975
nanowires
gallium arsenide
focused ion beam
molecular beam epitaxy
A3B5
https://physmath.spbstu.ru/article/2023.68.14/
CNF
RUS
84-89
0000-0001-5386-1013
Institute of Automation and Control Processes, Far Eastern Branch of the RAS
Galkin
Konstantin
galkinkn@iacp.dvo.ru
0000-0002-8726-9832
Institute of Automation and Control Processes, Far Eastern Branch of the RAS
Chernev
Igor
igor_chernev7@mail.ru
Subbotin
Evgenii
jons712@mail.ru
Maslov
Andrei
maslov@iacp.dvo.ru
0000-0003-4300-0070
Kropachev
Oleg
chernobez@gmail.com
Goroshko
Dmitrii
goroshko@iacp.dvo.ru
Institute of Automation and Control Processes FEB RAS
Balagan
Semyon
simak_64@mail.ru
Vladivostok, Russian Federation
National Research Technological University (MISiS)
Argunov
Efim
efim.argunov@mail.ru
Moscow, Russian Federation
Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS
Gutakovsky
Anton
gut@isp.nsc.ru
Novosibirsk, Russian Federation
0000-0003-4127-2988
Institute of Automation and Control Processes, Far Eastern Branch of the RAS
Galkin
Nikolay
galkin@iacp.dvo.ru
Ultrathin Cr and Fe monosilicides on Si(111) substrate: formation, optical and thermoelectrical properties
In this study, the formation, crystal structure, optical and thermoelectric properties of ultrathin (UT) films of iron and chromium monosilicides are considered, which exhibit optical and thermoelectric properties characteristic of semimetals with a low density of states near the Fermi level and the main contribution of holes to the Seebeck coefficient in the temperature range 120–400 K and the transition to its negative values at T > 400 K. The power factor for FeSi and CrSi UT films versus temperature was calculated and ab initio calculations of the phonon structure and thermal conductivity for bulk FeSi and its nanowires were carried out, which made it possible to estimate the thermoelectric figure of merit of ultrathin FeSi films.
10.18721/JPM.163.115
539.23+535.39+537.32
silicon
Cr and Fe monosilicides
ultrathin films
crystal structure
optical functions
thermoelectric properties
power factor
ab initio calculation
thermal conductivity
https://physmath.spbstu.ru/article/2023.68.15/
CNF
RUS
90-93
Alferov University
Baeva
Maria
maria.baeva111@gmail.com
St. Petersburg, Russian Federation
ITMO University
Furasova
Aleksandra
aleksandra.furasova@metalab.ifmo.ru
St. Petersburg, Russian Federation
0000-0002-8661-4083
Alferov University
Mozharov
Alexey
mozharov@spbau.ru
St. Petersburg, Russian Federation
Tonkaev
Pavel
pavel.tonkaev@metalab.ifmo.ru
Hybrid Perovskite/GaP nanowires solar cells with enhanced photovoltaic performance
In this work we report an improved photovoltaic performance of hybrid halide perovskite solar cell with integrated into a active layer GaP nanowires. The incorporation of GaP nanowires improves charge extraction from a perovskite layer. As a consequence, we boost the MAPbI3 perovskite solar cell efficiency up to 18.8% by open-circuit voltage and short-circuit current density enhancement. The provided multi-physical theoretical simulations of the solar cells with the incorporated GaP nanowires describe the mechanism of charge extraction and optical absorption improvement.
10.18721/JPM.163.116
53.06
perovskite solar cells
GaP nanowires
electric field management
photon management
https://physmath.spbstu.ru/article/2023.68.16/
CNF
RUS
94-99
Alferov University
Baeva
Maria
maria.baeva111@gmail.com
St. Petersburg, Russian Federation
Gets
Dmitry
smart_insuIator@mail.n.i
ITMO University
Polushkin
Artem
artem.polushkin@metalab.ifmo.ru
St. Petersburg, Russian Federation
Alferov University
Vorobyev
Alexandr
alex.spbau@mail.ru
St. Petersburg, Russian Federation
Light-emitting and light-detecting perovskite electrochemical cell on silicon
Here we report on a novel architecture of inorganic perovskite light-emitting and light-detecting electrochemical cell formed on silicon substrate. The cell’s active material layer consists of a composite material made: halide perovskite (CsPbBr3) microcrystals, polymer support matrix (poly(ethylene oxide)), and added mobile ions (Li+). The proposed device emits light of 7000 cd/m2 and electroluminescence efficiency of 1.3∙105 lm/W at 523 nm. The light-detecting property of the device is characterized by sensitivity up to 0.75 A/W, specific detectivity of 8.56∙1011 Jones, and linear dynamic range of 48 dB. Moreover, since the device fabricated is fabricated on a silicon substrate it exhibits 40% lower Joule heating compared to the perovskite optoelectronic devices fabricated on conventional ITO/glass substrates.
10.18721/JPM.163.117
53.06
composite inorganic halide perovskite
silicon
light-emitting electrochemical cell
photodetector
https://physmath.spbstu.ru/article/2023.68.17/
CNF
RUS
100-105
Voronezh State University of Engineering Technology
Lenshin
Alexander
lenshinas@mail.ru
Voronezh, Russian Federation
Voronezh State University
Peshkov
Yaroslav
tangar77@mail.ru
Voronezh, Russian Federation
Voronezh State University of Engineering Technology
Chernousova
Olga
byolval@mail.ru
Voronezh, Russian Federation
Voronezh State University
Kannykin
Sergey
svkannykin@gmail.com
Voronezh, Russian Federation
Voronezh State University
Grechkina
Margarita
grechkina_m@mail.ru
Voronezh, Russian Federation
0000-0002-3956-196X
Voronezh State University
Minakov
Dmitriy
Voronezh, Russian Federation
Voronezh State University
Zolotukhin
Dmitriy
zolotuhin@phys.vsu.ru
Voronezh, Russian Federation
Voronezh State University
Agapov
Boris
b.agapov2010@yandex.ru
Voronezh, Russian Federation
A change in the morphology of multilayer porous silicon with a stepwise decrease in the etching current density
We present an experimental study of multilayer porous silicon formed by electrochemical etching. Special emphasis is placed on effects that arise from a stepwise decrease in the current density while maintaining the total etching time. In order to provide a fully understanding of the morphology of the surface, we used scanning electron and atomic force microscopy. X-ray reflectivity was used to assess the porosity of porous layers. It was found that a stepwise decrease in the current density leads to the formation of a two-layer structure without changing the porosity of the base bottom layer. However, the porosity of the top layer can be varied over a wide range, which directly affects the photoluminescence of the samples. Our results show how the sample production conditions affect the fine tuning of the surface layer morphology of multilayer porous silicon.
10.18721/JPM.163.118
538.9
porous silicon
multilayer nanostructures
X-ray reflectivity
surface morphology
https://physmath.spbstu.ru/article/2023.68.18/
CNF
RUS
106-111
0000-0002-8726-9832
Institute of Automation and Control Processes, Far Eastern Branch of the RAS
Chernev
Igor
igor_chernev7@mail.ru
Subbotin
Evgenii
jons712@mail.ru
National Research Technological University (MISiS)
Argunov
Efim
efim.argunov@mail.ru
Moscow, Russian Federation
Kozlov
Aleksei
kozlov.ag@dvfu.ru
Institute of Chemistry FEB RAS
Gerasimenko
Andrey
gerasimenko@ich.dvo.ru
Vladivostok, Russian Federation
0000-0003-4127-2988
Institute of Automation and Control Processes, Far Eastern Branch of the RAS
Galkin
Nikolay
galkin@iacp.dvo.ru
Institute of Nanotechnologies of Microelectronics of the RAS
Poliakov
Maxim
Moscow, Russian Federation
Volkova
Lidiya
lidiya.volkova.96@mail.ru
Institute of Nanotechnologies of Microelectronics of the RAS
Dudin
Alexander
dudin.a@inme-ras.ru
Moscow, Russian Federation
Gouralnik
Alexander
fun_era@mail.ru
Mg2Si film on Si(111) prepared by Ultra-Fast Mg reactive deposition: crystal structure and thermoelectric properties
The Mg2Si film (~ 800 nm thick) was grown by pulsed reactive deposition of Mg on Si(111) at 340 °C in UHV. Structural investigations by XRD, SEM and cross-sectional x-HRTEM demonstrate high crystal quality and 100% texture of the film. Thermoelectric properties of the Mg2Si film are characterized within 290–470 K. The film conductivity changes from p-type below 309 K to n-type at higher temperatures. The power factor is 0.27 mW/m×K2 at 470 K. The p-type conductivity can be associated with presence of oxygen or/and vacancies (VMg, VMg2Si).
10.18721/JPM.163.119
539.23+539.25+539.26+537.32+537.9
magnesium silicide
silicon
films
epitaxy
reactive epitaxy
pulsed deposition
crystal structure
microscopy
transport properties
Seebeck coefficient
power factor
https://physmath.spbstu.ru/article/2023.68.19/
CNF
RUS
112-116
National Research Tomsk State University
Kukenov
Olzhas
okukenov@mail.ru
Tomsk, Russian Federation
National Research Tomsk State University
Sokolov
Arseniy
ars856570@gmail.com
Tomsk, Russian Federation
0009-0008-8052-3253
National Research Tomsk State University
Dirko
Vladimir
Tomsk, Russian Federation
0000-0002-4029-8353
National Research Tomsk State University
Lozovoy
Kirill
Tomsk, Russian Federation
National Research Tomsk State University
Kokhanenko
Andrey
kokh@mail.tsu.ru
Tomsk, Russian Federation
Effect of temperature during homoepitaxial growth of Si on Si(100) on the character of reflection high-energy electron diffraction patterns
To create high-quality nanostructures, it is important to understand the surface morphology for given growth parameters. The paper shows the effect of temperature on the ratio of intensities and periods corresponding to the growth of Si steps with different types of superstructure. The analysis was carried out in directions [100] and [110].
10.18721/JPM.163.120
539.27
molecular beam epitaxy
reflection high-energy electron diffraction
step-flow growth of silicon
homoepitaxy
https://physmath.spbstu.ru/article/2023.68.20/
CNF
RUS
117-121
Kenesbay
Ramazan
ramazan.kenesbay.1999@gmail.com
Miroshnichenko
Anna
anna.miroshnichenko.sergeevna@gmail.com
0000-0003-4517-0807
Alferov University
Mitin
Dmitry
mitindm@mail.ru
St. Petersburg, Russian Federation
Alferov University
Baeva
Maria
maria.baeva111@gmail.com
St. Petersburg, Russian Federation
Influence of double layer PMHS/PDMS encapsulation on CsPbBr3 PeLEC properties in high humidity conditions
In this paper we describe a new method to improve properties of a perovskite light-emitting electrochemical cell (PeLEC) by double layer polymer encapsulation. Our perovskite devices include 1) CsPbBr3-poly(ethylene oxide) layer as emissive layer, 2) NiOx:Cu nanoparticles layer as hole transport layer, 3) a transparent single wall carbon nanotubes as an electrode of the structure and 4) a double layer encapsulation polymer layers. These encapsulation layers consist of metal catalyst-free cross-linked polymethylhydrosiloxane and polydimethylsiloxane Sylgard 184. After 168 hours of aging in 80% relative humidity conditions an increase in luminance and in photo luminance quantum yield of our devices was detected. Our encapsulation provides optimal exposure of water vapor on perovskite material, which improves device properties by partial phase transition of CsPbBr3 to Cs4PbBr6, which has been confirmed by X-ray diffraction method. The Cs4PbBr6 passivate CsPbBr3 crystals and then the polymethylhydrosiloxane layer does not allow agglomeration of perovskite grains. The polydimethylsiloxane layer is required as a mechanical supporting layer. The polymethylhydrosiloxane/polydimethylsiloxane encapsulation of perovskite devices reveals a promising new way of development of flexible and stretchable perovskite light-emitting devices, which can work in extreme humid conditions.
10.18721/JPM.163.121
538.9
perovskite
encapsulation
polysiloxanes
metal-free cross-linking
humidity aging
https://physmath.spbstu.ru/article/2023.68.21/
CNF
RUS
122-127
Eremenko
Mikhail
eryomenko@sfedu.ru
Nikitina
Larisa
larnikitina@sfedu.ru
Southern Federal University
Jityaeva
Julia
zhityaeva@sfedu.ru
Taganrog, Russian Federation
Lakhina
Ekaterina
lakhina@sfedu.ru
Southern Federal University
Klimin
Viktor
kliminvs@sfedu.ru
Rostov-on-Don, Russian Federation
Southern Federal University
Ageev
Oleg
ageev@sfedu.ru
Taganrog, Russian Federation
Effect of plasma-chemical treatment of Si(001) substrates on the subsequent epitaxial growth of GaAs
In this work, we investigated the effect of plasma-chemical treatment of silicon substrates on the subsequent epitaxial growth of GaAs. It is shown that a change in processing modes did not lead to a strong change in the root-mean-square roughness of the initial silicon surface. It was found that under the same growth conditions GaAs is formed on substrates differently depending on the silicon treatment mode: from individual crystallites with nanowires to a structure intergrown from individual crystallites. It is shown that a change in the annealing temperature significantly affects the resulting surface morphology.
10.18721/JPM.163.122
538.9
molecular beam epitaxy
silicon
GaAs
monolithic integration
plasma-chemical treatment
scanning electron microscopy
https://physmath.spbstu.ru/article/2023.68.22/
CNF
RUS
128-132
Moscow Pedagogical State University
Bondareva
Polina
p.bondareva2016@yandex.ru
Moscow, Russian Federation
0000-0001-6494-0147
Moscow Pedagogical State University
Shein
Kirill
Moscow, Russian Federation
Lyubchak
Anastasia
anlyubchak@miem.hse.ru
0009-0008-4349-7332
Moscow Pedagogical State University
Izmaylov
Ramil
Moscow, Russian Federation
0000-0003-1529-5326
Prokhorov General Physics Institute, RAS
Rybin
Maksim
Moscow, Russian Federation
0000-0003-2560-6503
National Research University “Higher School of Economics”
Gayduchenko
Igor
igaiduchenko@hse.ru
Moscow, Russian Federation
Goltsman
Grigory
goltsman@rplab.ru
Sub-terahertz radiation detection using graphene noise thermometry method
In this paper we investigate a novel approach to inventing graphene-based sub-terahertz bolometers using noise thermometry. Graphene is a unique material for detecting radiation in the sub-terahertz (0.1–1 THz) and terahertz (1–10 THz) ranges due to its record low electron heat capacity and weak electron-phonon coupling. This results in sufficient heating of graphene electron system under terahertz radiation. The main challenge in the realization of graphene terahertz detectors arises due to weak graphene resistance dependence on temperature. Here, we solve this problem by measuring noise spectral density in graphene devices using lock-in amplifier technique under radiation of 0.13 THz. The measured thermal noise is directly dependent on electron temperature and can be used as detector signal as well as probe of electron temperature under sub-terahertz radiation. The obtained experimental data can be used to optimize modern graphene terahertz detectors and develop new ones.
10.18721/JPM.163.123
538.9
graphene
THz detectors
bolometers
noise thermometry
https://physmath.spbstu.ru/article/2023.68.23/
CNF
RUS
133-137
Nikitina
Ekaterina
mail.nikitina@mail.ru
Alferov University
Berezovskaya
Tamara
bertana@spbau.ru
St. Petersburg, Russian Federation
Alferov University
Pirogov
Evgeny
zzzavr@gmail.com
St. Petersburg, Russian Federation
Alferov University
Vasilkova
Elena
elenvasilkov@gmail.com
St. Petersburg, Russian Federation
0000-0003-1835-1629
Alferov University
Shubina
Kseniia
rein.raus.2010@gmail.com
St. Petersburg, Russian Federation
Alferov University
Sinitskaya
Olesya
olesia-sova@mail.ru
St. Petersburg, Russian Federation
0000-0001-8629-2064
Alferov University
Sobolev
Maxim
St. Petersburg, Russian Federation
Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel
Variation of the electrophysical and structural parameters of GaAs-based pseudomorphic transistor heterostructures with an InGaAs channel during more than eleven-year storage in natural conditions have been investigated. It was found that the values of the electrophysical parameters remained within specified limits (taking into account measurement errors) after 11 years of storage. The structural properties (thickness and composition of the InGaAs channel) of pseudomorphic heterostructures have undergone significant changes associated with the InGaAs channel layer broadening due to atomic diffusion.
10.18721/JPM.163.124
621.382.323
pseudomorphic transistors
PHEMT heterostructures
parameter stability
https://physmath.spbstu.ru/article/2023.68.24/
CNF
RUS
138-143
Moscow Institute of Physics and Technology (National Research University)
Vershinina
Olesya
seraia.ov@phystech.edu
Dolgoprudny, Moscow region, Russian Federation
Moscow Institute of Physics and Technology (National Research University)
Filalova
Emilia
filalova.em@phystech.edu
Dolgoprudny, Moscow region, Russian Federation
0000-0003-2149-4903
Moscow Institute of Physics and Technology (National Research University)
Kerechanina
Maria
Dolgoprudny, Moscow region, Russian Federation
Moscow Institute of Physics and Technology (National Research University)
Urazov
Maxim
urazov.mn@mipt.ru
Dolgoprudny, Moscow region, Russian Federation
Moscow Institute of Physics and Technology (National Research University)
Khramov
Egor
Egor.Khramov@phystech.edu
Dolgoprudny, Moscow region, Russian Federation
Moscow Institute of Physics and Technology (National Research University)
Lizunova
Anna
anna.lizunova@gmail.com
Dolgoprudny, Moscow region, Russian Federation
The effect of laser radiation on the properties of platinum nanoparticles produced in a gas discharge
This study is devoted to the investigation of the effect of laser radiation of different wavelengths (355, 527 and 1054 nm) on the morphology, structure and optical properties of platinum nanoparticles synthesized in a gas discharge. The results confirmed that all three types of lasers can be used to modify platinum nanoparticles and to change their sizes. The best modification that is shape transformation from aggregates to individual nanoparticles is achieved by using an infrared laser (1054 nm). It was shown that all obtained nanoparticles have a maximum of plasmon resonance in the ultraviolet region in the wavelength range from 200 to 300 nm, which is similar to the additionally simulated calculations based on the theory of Mie absorption spectra of monodisperse platinum particles with sizes from 5 to 120 nm.
10.18721/JPM.163.125
544.032.65
Platinum nanoparticles (Pt NPs)
spark discharge
laser radiation
reshape
plasmon resonance
ultraviolet (UV)
https://physmath.spbstu.ru/article/2023.68.25/
CNF
RUS
144-150
I.N. Ulyanov Chuvashia State University
Smirnov
Alexander
fizteh21@yandex.ru
Cheboksary, Russian Federation
0000-0002-4680-6224
I.N. Ulyanov Chuvashia State University
Abrukov
Victor
Cheboksary, Russian Federation
0009-0000-6712-0291
I.N. Ulyanov Chuvashia State University
Platonov
Pavel
Cheboksary, Russian Federation
0000-0003-4860-3460
I.N. Ulyanov Chuvashia State University
Anufrieva
Darya
Cheboksary, Russian Federation
0000-0001-8645-2822
I.N. Ulyanov Chuvashia State University
Kokshina
Anna
Cheboksary, Russian Federation
0000-0001-8974-2307
I.N. Ulyanov Chuvashia State University
Kazakov
Valery
Cheboksary, Russian Federation
I.N. Ulyanov Chuvashia State University
Petrov
Dmitry
dimapetrovasp@yandex.ru
Cheboksary, Russian Federation
I.N. Ulyanov Chuvashia State University
Tyunterov
Evgeny
tyunterov97@mail.ru
Cheboksary, Russian Federation
0000-0001-8432-5635
I.N. Ulyanov Chuvashia State University
Vasilyeva
Olga
Cheboksary, Russian Federation
0000-0002-9723-5652
I.N. Ulyanov Chuvashia State University
Ksenofontov
Sergey
Cheboksary, Russian Federation
0000-0003-2498-1192
I.N. Ulyanov Chuvashia State University
Lepaev
Alexander
Cheboksary, Russian Federation
Application of linear chain carbon films for sensitive elements of humidity sensors
The technologies for synthesizing and the results of investigating novel relative humidity sensors are described. Films made of various metals in combination with linear-chain carbon films were used as electrodes. The study presents the results of testing the sensors for sensitivity and recovery time. Multifactor computational models were created using neural networks based on the obtained data to solve both direct and inverse experimental problems.
10.18721/JPM.163.126
551.508.7
linear chain carbon film
film electrodes
silver films
tin films
aluminum films
sensor
relative humidity
https://physmath.spbstu.ru/article/2023.68.26/
CNF
RUS
151-156
0000-0002-3469-5897
Alferov University
Kondratev
Valeriy
kvm_96@mail.ru
St. Petersburg, Russian Federation
0009-0006-0923-1501
Peter the Great St. Petersburg Polytechnic University
Kozko
Ivan
St. Petersburg, Russian Federation
0009-0005-0777-6746
Alferov University
Karaseva
Elizaveta
St. Petersburg, Russian Federation
0000-0001-6869-1213
Alferov University
Vyacheslavova
Ekaterina
cate.viacheslavova@yandex.ru
0000-0002-4110-1647
Shugabaev
Talgat
talgashugabaev@mail.ru
Alferov University
Svinkin
Nikita
nik-svinkin@mail.ru
St. Petersburg, Russian Federation
0000-0001-7223-7232
Moscow Institute of Physics and Technology (National Research University)
Bolshakov
Alexey
acr1235@mail.ru
Moscow, Russian Federation
Towards nanowire-based selective vapor sensing with an aid of impedance spectroscopy
This work is aimed at development of highly sensitive silicon (Si)-based sensors allowing for selective detection and analysis of liquid solution composition containing ammonia (NH3) and hydrochloric acid (HCl) in an indirect manner. To provide enhanced sensitivity, we use Si nanowires obtained with cryogenic plasma etching with high aspect ratio providing large adsorption surface area. The nanowires are placed on a contact platform and electrochemical impedance spectroscopy (EIS) is used to detect the analytes. For optimization of the sensor performance we develop three types of the sensor based on as-fabricated Si nanowires, nanowires treated with hydrofluoric acid (HF) and nanowires decorated with silver (Ag) NPs.
10.18721/JPM.163.127
538.9
silicon
sensors
selective detection
nanowires
https://physmath.spbstu.ru/article/2023.68.27/
CNF
RUS
157-162
0009-0008-4344-4863
Alferov University
Nikolaeva
Aleksandra
St. Petersburg, Russian Federation
0000-0002-3469-5897
Alferov University
Kondratev
Valeriy
kvm_96@mail.ru
St. Petersburg, Russian Federation
Kadinskaya
Svetlana
skadinskaya@bk.ru
0009-0007-9013-7973
Alferov University
Markina
Diana
St. Petersburg, Russian Federation
0000-0002-2209-6483
Alferov University
Kochetkov
Fedor
St. Petersburg, Russian Federation
Zubov
Fedor
fzubov@hse.ru
0009-0009-7051-8458
Alferov University
Monastyrenko
Anatoliy
St. Petersburg, Russian Federation
0000-0001-7223-7232
Moscow Institute of Physics and Technology (National Research University)
Bolshakov
Alexey
acr1235@mail.ru
Moscow, Russian Federation
Pressure sensing with ZnO structures in PDMS matrix via impedance spectroscopy
The work is devoted to fabrication of the mechanical pressure sensors based on zinc oxide microwires (ZnO MWs) synthesized via low-temperature hydrothermal method. The ZnO MWs were encapsulated in Poly(dimethylsiloxane) (PDMS) membrane by G-coating technique between two ceramic substrates with interdigital gold contacts. The correlation between the mechanical load applied to the sensor and its electrophysical characteristics is studied with electrical impedance spectroscopy. The results of the work are of interest for the development of pressure sensors, in particular for miniature portable flexible health monitoring systems.
10.18721/JPM.163.128
538.9
ZnO
PDMS
sensor
https://physmath.spbstu.ru/article/2023.68.28/
CNF
RUS
163-169
V.I. Vernadsky Crimean Federal University
Dzedolik
Igor
igor.dzedolik@cfuv.ru
Simferopol, Russian Federation
V.I. Vernadsky Crimean Federal University
Tomilin
Sergey
s.tomilin.phystech@cfuv.ru
Simferopol, Russian Federation
0000-0001-9381-0034
V.I. Vernadsky Crimean Federal University
Polulyakh
Sergey
sergey.polulyakh@cfuv.ru
Simferopol, Russian Federation
V.I. Vernadsky Crimean Federal University
Yakubenko
Bogdan
bdrujok@mail.ru
Simferopol, Russian Federation
Logic gates based on carbon nanotubes
The propagation of a plasmonic pulse signal in carbon nanotubes (CNTs) has been investigated theoretically, and the circuits of plasmonic logic gates “NOT” and “OR” based on CNTs have been proposed. These logic gates represent a complete functional basis for binary logic. The spatial modeling of plasmonic logic gates is performed taking into account the atomic structure of CNTs. The proposed logic gates can be used for plasmonic circuitry in the telecommunication frequency range.
10.18721/JPM.163.129
535.016
nanoplasmonic
logic gate
Mach-Zehnder-type interferometer
carbon nanotube
plasmon interference
https://physmath.spbstu.ru/article/2023.68.29/
CNF
RUS
170-175
Goldberg
Artemiy
artemiy.goldberg@mail.ru
Peter the Great St. Petersburg Polytechnic University
Provodin
Daniil
provodindanya@gmail.com
St. Petersburg, Russian Federation
Kochetkov
Igor
K.Igor.D@yandex.ru
Davydov
Vadim
davydov_vadim66@mail.ru
Features of investigation of liquid media by optical differential method in express-control
The features of liquid media investigation during express control using the phenomenon of refraction are considered. The advantages of using the differential method for investigation of liquid media in comparison with the others are noted. The features of liquid media investigation with using the differential method are established. A new technique for liquid media investigation has been developed, which allows changing the discreteness of the scale for measuring the refractive index n in the range from 1.2300 to 2.230. The design of the Anderson differential cuvette has been developed for carrying out research with required accuracy, by changing the discreteness of the measurement scale n. The results of experimental investigations of liquid media (water and water with iron oxides) are presented.
10.18721/JPM.163.130
535-7
liquid
refraction
refractive index
Anderson differential cell
laser radiation
axis
medium state control
https://physmath.spbstu.ru/article/2023.68.30/
CNF
RUS
176-181
Kadinskaya
Svetlana
skadinskaya@bk.ru
0000-0002-3469-5897
Alferov University
Kondratev
Valeriy
kvm_96@mail.ru
St. Petersburg, Russian Federation
0000-0001-7143-6686
Kusnetsov
Alexey
alkuznetsov1998@gmail.com
Lihachev
Alexey
lihachev_alexey@bk.ru
Nashchekin
Alexey V.
nashchekin@mail.ioffe.ru
St.Petersburg State University of Film and Television
Akopyan
Irina
irina-akopyan@yandex.ru
St. Petersburg, Russian Federation
St. Petersburg State University
Serov
Alexey
a.serov@spbu.ru
St. Petersburg, Russian Federation
St.Petersburg State University
Labzovskaya
Mariana
St. Petersburg, Russian Federation
0000-0002-3705-9706
St.Petersburg State University of Film and Television
Mikushev
Sergey
St. Petersburg, Russian Federation
St.Petersburg State University
Novikov
Boris
bono1933@mail.ru
St. Petersburg, Russian Federation
St. Petersburg State University
Shtrom
Igor
i.shtrom@spbu.ru
St. Petersburg, Russian Federation
0000-0001-7223-7232
Moscow Institute of Physics and Technology (National Research University)
Bolshakov
Alexey
acr1235@mail.ru
Moscow, Russian Federation
Deep-Level Emission Tailoring in ZnO Nanostructures Grown via Hydrothermal Synthesis
Development of the new approaches for synthesis of luminescent semiconductor nanomaterials is of high demand. In this work, nano- and microstructures of zinc oxide were synthesized by the hydrothermal method to provide new insight onto the optimization of this material optical properties. The possibility of controlling the synthesized ZnO geometry and morphology using various surfactants during the synthesis was demonstrated. Further study of the structures obtained by PL spectroscopy made it possible to observe a correlation between the hydrothermal growth conditions and the obtained ZnO nanostructures optical properties. This property, together with the ability to control the structures geometry, opens up new possibilities for their application in nanophotonics, UV-VIS and white light sources.
10.18721/JPM.163.131
535.015
zinc oxide
hydrothermal
nanowire
photoluminescence
deep level emission
PEI
sodium citrate
https://physmath.spbstu.ru/article/2023.68.31/
CNF
RUS
182-186
Alferov University
Nadoyan
Irina
ir.nadoyan@gmail.com
St. Petersburg, Russian Federation
0000-0002-3947-8648
Alferov University
Solomonov
Nikita
St. Petersburg, Russian Federation
0000-0001-8440-494X
Alferov University
Novikova
Kristina
novikova_k@spbau.ru
St. Petersburg, Russian Federation
Alferov University
Sharov
Vladislav
vl_sharov@mail.ru
St. Petersburg, Russian Federation
0000-0002-8661-4083
Alferov University
Mozharov
Alexey
mozharov@spbau.ru
St. Petersburg, Russian Federation
ITMO University
Kislov
Denis
denis.kislov@metalab.ifmo.ru
St. Petersburg, Russian Federation
ITMO University
Petrov
Mihail
m.petrov@metalab.ifmo.ru
St. Petersburg, Russian Federation
0000-0001-9792-045X
Peter the Great St. Petersburg Polytechnic University
Mukhin
Ivan
muhin_is@spbstu.ru
Nanooscillators based on carbon whiskers for detectors of optomechanical effects
A new mechanical resonance method for determining the effect of photoinduced heating from laser radiation on mechanical systems based on carbon whiskers was developed. We demonstrate a fast and universal approach for manufacturing the resonant nanooscillator detecting the effect of optical radiation on the properties of nanoobjects. The nanomechanical whisker-based resonator was grown on at the end of the tungsten needle using an electron beam induced deposition approach implemented in a scanning electron microscope. The influence of laser radiation on the mechanical properties of nanoresonators was experimentally revealed, and the trajectory of their movement at the first mechanical mode was visualized. The demonstrated approach for detecting the influence of optical radiation on the vibrational characteristics of nanooscillators paves the way for new photothermal and optomechanical sensors.
10.18721/JPM.163.132
538.9
nanowhiskers oscillations
optical heating
optical power sensing
https://physmath.spbstu.ru/article/2023.68.32/
CNF
RUS
187-192
0009-0003-5049-538X
Alferov University
Zavyalova
Eseniya
St. Petersburg, Russian Federation
0000-0001-7143-6686
Kusnetsov
Alexey
alkuznetsov1998@gmail.com
0009-0003-4890-683X
ITMO University
Rider
Maxim
St. Petersburg, Russian Federation
0000-0002-3469-5897
Alferov University
Kondratev
Valeriy
kvm_96@mail.ru
St. Petersburg, Russian Federation
0009-0003-7988-7520
ITMO University
Kovova
Mariia
St. Petersburg, Russian Federation
0000-0002-9658-5036
Alferov University
Shmakov
Stanislav
St. Petersburg, Russian Federation
Fedorov
Valery
vfedorov@pnpi.spb.ru
0000-0001-9626-8543
ITMO University
Zakharov
Viktor
St. Petersburg, Russian Federation
0000-0001-7223-7232
Moscow Institute of Physics and Technology (National Research University)
Bolshakov
Alexey
acr1235@mail.ru
Moscow, Russian Federation
Towards versatile photonics based on GaP nanowires decorated with carbon dots
Carbon dots (CDs) exhibit great potential as nanostructures in photonics due to their simple fabrication process, adaptable and effective emission. We used hydrothermal synthesis to fabricate CDs and decorated vertical gallium phosphide (GaP) nanowire array. Through feasible drop-casting deposition technique, we successfully observed efficient luminescence across the nanowires surface using confocal microscopy. Numerical calculations combined with experimental data revealed amplified luminescence through the resonant optical modes of the nanowire, acting as a waveguide. As a result, this study provides insight into the possibility of development of novel photonic devices by decorating optically dense nanowires with CDs to enhance and control over the emission efficiency and propagation.
10.18721/JPM.163.133
537.876.4
carbon dots
gallium phosphide
nanowires
confocal microscopy
photoluminescence
https://physmath.spbstu.ru/article/2023.68.33/
CNF
RUS
193-197
0000-0002-6762-2053
Southern Federal University
Dukhan
Denis
duhan@sfedu.ru
Taganrog, Russian Federation
Balakirev
Sergey
sbalakirev@sfedu.ru
0000-0002-1799-1125
Shanghai University
Voloshina
Elena
Shanghai, China
Solodovnik
Maxim
solodovnikms@sfedu.ru
Ab initio modelling of In wetting layer formation on As-stabilized GaAs during first stages of droplet epitaxy
In this work we carry out theoretical study of the formation of an In wetting layer on the surface of As-stabilized GaAs(001)-(1×1) to better understand the growth kinetics of metal droplets during droplet epitaxy. For this study, we calculate the dependence of the adatom adsorption energy (Eads) on the In coverage, since its value describes force with which adatoms interact with substrates, directly affecting their mobility. Calculations were performed using the state-of-the-art approaches of the density functional theory. The results show that at 0.125 ML coverage Eads has very high value of 8.48 eV which is explained by the adsorbate induced surface reconstruction being included in calculated value. With increasing coverage Eads dropped significantly (down to 3.588 eV/adatom at 1.75 ML coverage) which can lead to subsequent adatoms having greater mobility and can affect the size and surface density of metal nanodroplets and quantum dots based on them.
10.18721/JPM.163.134
538.975
density functional theory
GaAs
indium
adsorption energy
critical thickness
droplet epitaxy
molecular beam epitaxy
https://physmath.spbstu.ru/article/2023.68.34/
CNF
RUS
198-203
0000-0002-3698-6700
Peter the Great St. Petersburg Polytechnic University
Wang
Ding
jssdwang06@mail.ru
St. Petersburg, Russian Federation
Davydov
Vadim
davydov_vadim66@mail.ru
Formation features of motion trajectory of mercury-199 ions in the quantum frequency standard for space applications
The necessity of developing an atomic clock that can operate without adjusting the scale during a satellite-to-Earth communication session is substantiated. This is necessary to place a satellite constellation in higher orbits, where a stable and long communication session with the Earth cannot always be realized. It is also necessary during a long flight in outer space (between planets). The problems that arise in the operation of the current models of atomic clocks now in use in orbit are mentioned. It has been established that the most promising solution to this problem is the use of atomic clocks on mercury-199 ions. The main problem that arises when reducing the size of the structure of atomic clocks on mercury-199 ions when they are placed on a satellite or on an autonomous space mobile object is considered in detail. To solve this problem, a mathematical model has been developed to calculate the trajectory of mercury-199 ions in the Paul trap when its dimensions change, which must be selected in accordance with the technical characteristics of the satellite or moving object. The modeling results of ion motion trajectory depending on the parameters of trap rods and control voltages are presented. Options for determining the optimal parameters of ion trap under conditions of limited volume and mass of the atomic clock are proposed.
10.18721/JPM.163.135
53.09
Global navigation satellite systems
quantum frequency standard on mercury-199 ions
Paul trap
Mathieu equation
trajectory of ions
optimal parameter
https://physmath.spbstu.ru/article/2023.68.35/
CNF
RUS
204-208
Zhurina
Angelina
gelya.zhurina@mail.ru
Pecherskaya
Ekaterina
pea1@list.ru
0009-0000-9721-9401
Penza State University
Emelyanov
Nikita
Penza, Russian Federation
0000-0001-5075-2727
Penza State University
Shepeleva
Juliya
Penza, Russian Federation
Penza State University
Kozlov
Gennady
politeh@pnzgu.ru
Penza, Russian Federation
Determination of the electrophysical parameters of piezoelectrics using complex conductivity
The use of piezomaterials as a substrate for a graphene structure is considered. Since the surface acoustic waves generated in piezoelectric materials, are on the surface of a solid body, piezoelectrics can act as a substrate for graphene. Methods for determining the electrical parameters of piezoelectric materials are studied and selected, the ways to improve these methods are considered. In order for piezoelectrics to be used as a substrate for graphene, the properties of piezoelectrics must be carefully studied. Therefore, the frequency characteristics of a sample in the form of a tablet based on solid solutions of zirconate – lead titanate were measured. As an improvement in the methods for determining the electrophysical parameters of piezoelectric elements, it is proposed to process the measurement results automatically using a multifunctional mathematical program, such data processing helps to reduce the error of indirect measurement results of the electrophysical parameters of piezoelectric materials. A graph of the amplitude-frequency characteristics of the sample was built. Thanks to computer processing, it was possible to reveal the relationship between the piezoelectric constant of the sample and its geometric dimensions. It turned out that the piezoelectric element dimensions strongly affect the frequency response and other piezoelectric constants.
10.18721/JPM.163.136
666.665
graphene
piezoelectrics
electrophysical parameters of piezoelectrics
https://physmath.spbstu.ru/article/2023.68.36/
CNF
RUS
209-215
Bauman Moscow State Technical University
Vetrova
Natalia
vetrova@bmstu.ru
Moscow, Russian Federation
0000-0001-6485-6754
Bauman Moscow State Technical University
Kuimov
Evgeny
Moscow, Russian Federation
Bauman Moscow State Technical University
Shashurin
Vasily
shashurin@bmstu.ru
Moscow, Russian Federation
Bauman Moscow State Technical University
Luneva
Lubov
luneva@bmstu.ru
Moscow, Russian Federation
Bauman Moscow State Technical University
Meshkov
Sergey
meschkow@bmstu.ru
Moscow, Russian Federation
Bauman Moscow State Technical University
Makeev
Mstislav
m.makeev@bmstu.ru
Moscow, Russian Federation
Saint Petersburg Mining University
Kozhukov
Andrey
St. Petersburg, Russian Federation
Modeling of current-voltage characteristics of resonant tunneling structures for solving the problems of studying objective functions in the problems of synthesizing resonant tunneling diode
The resonant tunneling diode (RTD), due to the possibility of targeted synthesis of the current-voltage characteristic, is one of the most attractive non-linear elements of signal converters. To realize the advantages of the RTD, a model of its current-voltage characteristic (CVC) is needed, however, the existing models do not allow for a physical and mathematical interpretation of the relationships between the CVC parameters and the RTD design, which makes it impossible to analyze the objective functions and, as a result, the choice of optimization method. Hence, the problem of studying objective functions arises, which makes the choice of the optimization method unreasonable. To solve this problem, a compact analytical model of current transfer has been developed, the distinguishing features of which are the allowance for interelectronic interaction and the absence of undetermined empirical correction factors. Estimates of the electron density in the quantum well of the RTD heterostructural channel and the self-consistent correction to resonant levels are obtained. The developed model makes it possible to obtain estimates comparable in accuracy with estimates of distributed models over the entire area of the positive differential resistance of CVC with a relative error for AlGaAs structures not exceeding 1%, which meets the requirements of the design problems of modern radio electronic devices, in particular, devices for converting the frequency of radio signals for receiving - transmitting systems for various purposes. Thus, the presented compact model is promising for integration into RTD-based device design systems.
10.18721/JPM.163.137
621.382
mathematical modeling
resonant tunneling structures
self-consistent potential
electron density
oscillators
https://physmath.spbstu.ru/article/2023.68.37/
CNF
RUS
216-220
0000-0002-8163-4245
Moscow Institute of Physics and Technology (National Research University)
Ivchenko
Egor
ivchenko.ei@phystech.edu
0000-0003-1511-1128
Khmelev
Aleksandr
a.khmelev@goqrate.com
0000-0002-1599-9801
Kurochkin
Vladimir
v.kurochkin@rqc.ru
Detection-efficiency mismatch in a satellite-to-ground quantum communication
The detection efficiency mismatch is one of the issues with practical quantum key distribution. The challenge is also inherent in satellite quantum communication due to the detectors and optical elements imperfections in the different quantum channels. Here, we generalize the theory developed for optical fiber QKD to satellite-to-ground QKD with four unbalanced polarization channels to estimate the secret key length. We simulate satellite quantum communication for the measured parameters of the realistic receiving ground station and calculate bounds for the secret key rate and length using two approaches: the first one when you separate the data on bases and the second when calculate the key from the full amount of data. We discuss the advantages and disadvantages of each approach and describe ways to operate with them. For our ground station, the secret key rate turned out to be 20% less when the detection-efficiency mismatch was at 1:2 and we used the optimal way to calculate the key.
10.18721/JPM.163.138
004.056.55
quantum key distribution
satellite-to-ground channel
modeling
detection-efficiency mismatch
https://physmath.spbstu.ru/article/2023.68.38/
CNF
RUS
221-226
0000-0003-4206-4136
Southern Federal University
Saenko
Aleksandr
avsaenko@sfedu.ru
Taganrog, Russian Federation
Southern Federal University
Bilyk
German
bilyk@sfedu.ru
Taganrog, Russian Federation
Southern Federal University
Malyukov
Sergey
spmalyukov@sfedu.ru
Taganrog, Russian Federation
Research of the photoelectric parameters of ZnO/Cu2O heterojunction solar cells
Theoretical modeling of ZnO/Cu2O heterojunction solar cells has been carried out to optimize its structure and increase the energy conversion efficiency. The effect of the thickness and defect concentration in Cu2O and ZnO layers on the efficiency of a solar cell is studied. It was found that the optimal thickness of the Cu2O and ZnO layers should be 5 µm and 20 nm, respectively. It is shown that to obtain a high efficiency of a solar cell, the defect concentration (copper vacancies) in the Cu2O layer should be 1015 cm−3, and the defect concentration (oxygen vacancies) in the ZnO layer should be 1019 cm−3. The maximum efficiency of a solar cell based on ZnO/Cu2O is 6 %. The experimental formation of Cu2O and ZnO layers by magnetron sputtering at room temperature has been carried out, their surface morphology has been studied, and experimental samples of oxide solar cells have been created.
10.18721/JPM.163.139
621.383
numerical simulation
oxide semiconductors
layer thickness
defect concentration
solar cell
photovoltaic parameters
magnetron sputtering
https://physmath.spbstu.ru/article/2023.68.39/
CNF
RUS
227-231
Mozhayko
Anna
annaanna-1996@mail.ru
Gerashchenkov
Dmitry
gda.spb@gmail.com
Davydov
Vadim
davydov_vadim66@mail.ru
Theoretical and experimental study of laser treatment of nickel using a diode laser
In recent years, laser surface treatment (LST) has widely used to improve the properties of nickel coatings. LST has many advantages, however, different coating thicknesses require different modes, which can be selected using simulation. In this study, the modeling process is considered and an experiment is conducted to study the effect of LST process parameters on melt pool sizes. The aim of this research was therefore to reveal the dependence of the melt pool depth, namely the thickness of the layer in which the mixing process of components takes place, on the scan speed using a diode laser. With LST by diode laser, the thickness of the processed layer reaches about 500 μm, and the width of the processed surface is about 6 mm.
10.18721/JPM.163.140
621.78+001.891.573
laser surface treatment
thermal modeling
finite element method
nickel
melt pool
cold spraying
https://physmath.spbstu.ru/article/2023.68.40/
CNF
RUS
232-236
National Research Tomsk State University
Khomyakova
Kristina
homiackowa.kristina@yandex.ru
Tomsk, Russian Federation
National Research Tomsk State University
Deeb
Hazem
deeb.hazem.syr@gmail.com
Tomsk, Russian Federation
0000-0002-4029-8353
National Research Tomsk State University
Lozovoy
Kirill
Tomsk, Russian Federation
National Research Tomsk State University
Kokhanenko
Andrey
kokh@mail.tsu.ru
Tomsk, Russian Federation
Modeling the characteristics of avalanche photodiodes based on Ge/Si
In this article, the planar structure of an avalanche photodiode based on Ge/Si is designed. The dependences of the gain and bandwidth on the bias voltage for different thicknesses of the absorption and multiplication layers of an avalanche photodiode based on Ge/Si are presented.
10.18721/JPM.163.141
621.383.523
optoelectronics
avalanche photodiode
impact ionization
planar structure
gain-bandwidth product
https://physmath.spbstu.ru/article/2023.68.41/
CNF
RUS
237-241
0000-0001-7319-8001
National Research Technological University (MISiS)
Filyaev
Alexandr
a.filiaev@misis.ru
Moscow, Russian Federation
0000-0002-6030-2532
National Research Technological University (MISiS)
Losev
Anton
losev.av@misis.ru
Moscow, Russian Federation
0000-0002-3252-2984
National Research Technological University (MISiS)
Zavodilenko
Vladimir
v.zavodilenko@misis.com
Moscow, Russian Federation
0000-0001-8865-556X
National Research Technological University (MISiS)
Pavlov
Igor
pavlov.id@misis.ru
Moscow, Russian Federation
Evaluation of quantum efficiency of InGaAs/InP single-photon detectors in quantum key distribution systems
In this paper an important parameter of single-photon detectors, such as quantum efficiency, is considered. Errors in determining this parameter lead to significant errors in the parameters of a quantum key distribution system, where such detectors find their application. Three models are proposed to estimate photon detection efficiency or quantum efficiency and their main advantages and disadvantages are considered. A special experimental setup has been developed to carry out validation of the presented models on experimental data. It was found that at low values of laser radiation power the dependent and empirical models give good results, and the independent model is not applicable.
10.18721/JPM.163.142
53.082.52; 621.3.084.2
quantum efficiency
single-photon detector
quantum key distribution systems
https://physmath.spbstu.ru/article/2023.68.42/
CNF
RUS
242-247
0000-0002-3252-2984
National Research Technological University (MISiS)
Zavodilenko
Vladimir
v.zavodilenko@misis.com
Moscow, Russian Federation
0000-0001-7319-8001
National Research Technological University (MISiS)
Filyaev
Alexandr
a.filiaev@misis.ru
Moscow, Russian Federation
0000-0002-6030-2532
National Research Technological University (MISiS)
Losev
Anton
losev.av@misis.ru
Moscow, Russian Federation
0000-0001-8865-556X
National Research Technological University (MISiS)
Pavlov
Igor
pavlov.id@misis.ru
Moscow, Russian Federation
Investigation on the effects of the multiplication area shape on the dark count rate in InGaAs/InAlAs single-photon avalanche photodiodes
In this paper the influence of the multiplication area shape on the dark count rate (DCR) of InGaAs/InAlAs single-photon avalanche photodiodes (SPADs) is discussed. This study is carried out within the framework of SPAD design parameter optimization. The diode structure has been simulated in the T-CAD calculation environment. The structure with three levels of multiplication area with a smooth transition is the most optimal one. This structure will achieve higher quantum efficiency during the diode operation.
10.18721/JPM.163.143
53.082.52; 621.3.084.2
multiplication area
dark count rate
single-photon avalanche photodiodes
single-photon detector
https://physmath.spbstu.ru/article/2023.68.43/
CNF
RUS
243-253
Mendeleev Russian University of Chemistry and Technology
Kalyakin
Timofey
t.s.kalyakin@gmail.com
Moscow, Russian Federation
Mendeleev Russian University of Chemistry and Technology
Danilov
Egor
danilovegor1@gmail.com
Moscow, Russian Federation
Optical extinction and electrical conductivity measurements as express techniques to estimate concentrations of graphene suspensions
This article explores a method for determining the concentration of graphene dispersion using the integral optical technique based on the Beer-Lambert-Bouguer law for direct ultrasonic exfoliation method. The results showed nonlinear dependence of conductivity on concentration, indicating fundamental differences in the mechanism of exfoliation at different solid phase concentrations. Graphene dispersions in ethylene glycol also exhibited low transmittance in the visible region of the spectrum, which requires the use of other research methods for higher concentrations. Extinction coefficients were determined to calculate the concentration of graphene in the dispersion, which allows for the calculation of light absorption in the solution at a certain concentration and beam path length. The obtained results can be useful for further use of graphene in optoelectronic devices. Additionally, the concentration of few-layered graphene particles was calculated in the suspension obtained by liquid-phase exfoliation method with an initial graphite concentration of 6 mg/ml.
10.18721/JPM.163.144
544.774.3; 544.77.03; 544.77.051.1; 661.666.2
graphene
Beer-Lambert-Bouguer law
concentration
exfoliation
https://physmath.spbstu.ru/article/2023.68.44/
CNF
RUS
254-257
Ivanishcheva
Alexandra
starnikova@sfedu.ru
0000-0003-3725-6053
Petrov
Viktor
vvpetrov@sfedu.ru
Research of temperature dependence of conductivity of arrays of ZnO/Au and ZnO/SnO2 nanorods under the influence of combined visible and ultraviolet irradiation
Arrays of ZnO nanorods of vertical orientation were synthesized by hydrothermal method on quartz substrates. The nanorods had a length of 500‒800 nm and an average cross-sectional size of 40–80 nm. On top of ZnO nanorods, by vacuum thermal evaporation and subsequent annealing at 300 °C, gold (Au) nanoclusters with average sizes of 9 ± 1 nm and 4 ± 0.5 nm and tin oxide (SnO2) nanoclusters with average sizes of 30 ± 5 nm and 15 ± 3 nm. To fabricate resistive sensor elements, V-Ni contact metallization was formed over nanorods by vacuum thermal evaporation. The study of the electrophysical characteristics of arrays of ZnO/Au nanorods showed that the simultaneous effect of temperature and radiation from a LED with a wavelength of 400 nm leads to almost temperature independence of the conductivity of sensor elements.
10.18721/JPM.163.145
504.064.3
ZnO
nanorods
electrophysical properties
ultraviolet irradiation
https://physmath.spbstu.ru/article/2023.68.45/
CNF
RUS
258-263
0000-0003-4164-178X
Moscow Institute of Physics and Technology (National Research University)
Kornyushin
Denis
kornyushin.d@phystech.edu
Moscow, Russian Federation
0000-0001-9780-9137
Moscow Institute of Physics and Technology (National Research University)
Musaev
Andrey
Moscow, Russian Federation
Moscow Institute of Physics and Technology (National Research University)
Vershinina
Olesya
seraia.ov@phystech.edu
Dolgoprudny, Moscow region, Russian Federation
Moscow Institute of Physics and Technology (National Research University)
Ivanov
Mattew
ms.ivanov@phystech.edu
Dolgoprudny, Moscow region, Russian Federation
Moscow Institute of Physics and Technology (National Research University)
Kameneva
Ekaterina
kameneva.ei@phystech.edu
Dolgoprudny, Moscow region, Russian Federation
Moscow Institute of Physics and Technology (National Research University)
Volkov
Ivan
volkov.ia@mipt.ru
Dolgoprudny, Moscow region, Russian Federation
Moscow Institute of Physics and Technology (National Research University)
Efimov
Alexey
efimov.aa@mipt.ru
Dolgoprudny, Moscow region, Russian Federation
Ivanov
Victor
ivanov.vv@mipt.ru
Effect of the thickness of plasmonic gold nanostructures on the surface enhanced Raman scattering
In this work, we studied the influence of the thickness of plasmonic nanostructures composed of gold nanoparticles on the intensity of lines in SERS spectra of methylene blue (MB), 1,2 bis(4 pyridyl)ethylene (BPE), and malachite green (MG) used as analytes. Plasmonic nanostructures were patterned on alumina substrates by dry aerosol printing with spark discharge synthesized gold nanoparticles (mean size 9.5 nm) and represented layers 3 mm × 3 mm in size with the thickness of about 0.3, 0.4, and 0.5 μm. The enhancement factor was estimated at 5.5×106 for MB, 8.0×106 for BPE, and 2.1×107 for MG by using SERS spectra measured on nanostructures with the optimal thickness of 0.4 μm.
10.18721/JPM.163.146
539.231, 538.97
nanoparticles
gold
spark gas-discharge
focused deposition
plasmonic nanostructures (PN)
SERS
https://physmath.spbstu.ru/article/2023.68.46/
CNF
RUS
264-268
Shepeleva
Anastasia
eduard.shepelev.67@mail.ru
0000-0001-9602-7221
Research Institute of Electronic and Mechanical Devices
Gurin
Sergey
Penza, Russian Federation
0000-0001-9319-2475
Research Institute of Electronic and Mechanical Devices
Novichkov
Maksim
Penza, Russian Federation
0009-0005-5656-4918
Research Institute of Electronic and Mechanical Devices
Zuev
Vyacheslav
Penza, Russian Federation
0009-0006-3140-5897
Research Institute of Electronic and Mechanical Devices
Ryzhov
Alexandr
Penza, Russian Federation
0009-0003-1945-5646
Research Institute of Electronic and Mechanical Devices
Deryabin
Denis
Penza, Russian Federation
Gas sensors based on zinc oxide nanorods with colloid quantum dots
A design and technological solution for increasing the temporal stability of gas sensors based on the nanorods-colloidal quantum dots structure is presented. For this purpose, zinc oxide nanorods oriented predominantly to the surface normal were grown by the hydrothermal method. Silicon nitride, followed by etching to the level of zinc oxide colloidal dots in an inductively coupled plasma using a gas mixture based on sulfur hexafluoride, was deposited onto the resulting structure by RF magnetron sputtering. Through accelerated aging testing, it has been found that silicon carbide protected zinc oxide nanorods exhibit greater temporal stability due to less surface oxidation resulting in a reduction in specific surface area. Silver nanoparticles with a plasmon effect were deposited onto the resulting structure by centrifugation.
10.18721/JPM.163.147
621.317.39.084.2
gas-sensitive material
nanorods
optical radiation
silver nanoparticles
https://physmath.spbstu.ru/article/2023.68.47/
CNF
RUS
269-272
0000-0001-9319-2475
Research Institute of Electronic and Mechanical Devices
Novichkov
Maksim
Penza, Russian Federation
0000-0001-9602-7221
Research Institute of Electronic and Mechanical Devices
Gurin
Sergey
Penza, Russian Federation
0000-0002-7053-4775
Research Institute of Electronic and Mechanical Devices
Nesterov
Sergey
Penza, Russian Federation
0000-0002-2088-5497
Penza State University
Shelakhaev
Dmitry
Penza, Russian Federation
Pecherskaya
Ekaterina
pea1@list.ru
Shepeleva
Anastasia
eduard.shepelev.67@mail.ru
Study of deposition of heterogeneous structures on ion-exchange membranes
The process of a heterogeneous catalytic coating formation on the ion-exchange membranes surface was studied in this work. It is determined that the use of the chemical deposition method results in a highly porous coating, but with low strength and durability. A combined method for obtaining a heterogeneous catalytic coating is proposed, which includes the formation of adsorption centers by thermal vacuum spraying and the growth of the bulk of the catalyst by chemical deposition.
10.18721/JPM.163.148
544.478-03
heterogeneous structure
ion-exchange membrane
electrolysis
hydrogen production
catalyst
deposition
https://physmath.spbstu.ru/article/2023.68.48/
CNF
RUS
273-277
ITMO University
Abramov
Artem
artem.abramov@metalab.ifmo.ru
St. Petersburg, Russian Federation
ITMO University
Chestnov
Igor
igor.chestnov@metalab.ifmo.ru
St. Petersburg, Russian Federation
ITMO University
Iorsh
Ivan
i.iorsh@metalab.ifmo.ru
St. Petersburg, Russian Federation
ITMO University
Kravtsov
Vasily
vasily.kravtsov@metalab.ifmo.ru
St. Petersburg, Russian Federation
Localization microscopy of single photon emitters in locally strained monolayer semiconductor
Integration of single photon emitters with nanophotonic structures on a chip is key for the development of future quantum optoelectronic devices. Here we study the formation of single photon emitters in a WSe2 monolayer by local nanoindentation with an atomic force microscope probe. Using the bichromatic photoluminescence-imaging approach, we define the spatial locations of single photon emitters with deep sub-wavelength accuracy.
10.18721/JPM.163.149
538.911
single photon emitter
two-dimensional materials
nanophotonics
quantum optics
https://physmath.spbstu.ru/article/2023.68.49/
CNF
RUS
278-283
0000-0003-3589-8941
Peter the Great St. Petersburg Polytechnic University
Boudjemila
Linda
St. Petersburg, Russian Federation
Davydov
Vadim
davydov_vadim66@mail.ru
Ioffe Institute
Nenashev
Grigorii
virison95@gmail.com
St. Petersburg, Russian Federation
0000-0001-5449-4446
Ioffe Institute
Aleshin
Andrey
aleshin@transport.ioffe.ru
St. Petersburg, Russian Federation
Ioffe Institute
Malyshkin
Vladislav
mal@gromco.com
St. Petersburg, Russian Federation
Exciton dynamics characterization by electrochemical impedance spectroscopy of CsPbBr3(I3) perovskite nanocrystals for photovoltaic application
The deposition of an additional layer of nanoparticles is a widely used method for improving the optical and electrical characteristics of semiconductor solar cells (SCs). We present the results of studies of impedance spectroscopy (IS) in operating sandwich structures based on films of nanocrystals (NC) of inorganic perovskites of lead halides CsPbI3 and CsPbBr3. These last are characterized by the presence of extensive phonon disorder in the former. This phonon disorder gives rise to unique electron–phonon coupling and dielectric responses. The perovskite material is deposited on the surface of a solar cell based on crystalline silicon (c-Si). The IS results show that under identical conditions, the Nyquist plots for both structures are in good agreement with the equivalent circuit model represented in continued line as a fit curve. It represents series resistance, recombination resistance and geometric capacitance, respectively, which arise due to charge accumulation, charge transfer resistance and/or additional interfacial electronic states. It is found, that adding of the CsPbI3 layer enhances the photo response under bias, but such a photo response leads to a decrease in dc conductivity. On the contrary, adding of the CsPbBr3 layer blocks the photo response under bias but slightly improves the photo response for the zero bias. The obtained results provide the way to improve the performance of next generation of tandem c-Si SCs with perovskite NCs upper layers.
10.18721/JPM.163.150
539.1
impedance spectroscopy
perovskites
nanocrystals
crystalline silicon
https://physmath.spbstu.ru/article/2023.68.50/
CNF
RUS
284-288
LLC “QRate”
Sodnomay
Amgalan
a.sodnomay@goqrate.com
Moscow, Russian Federation
LLC “QRate”
Mayboroda
Vladimir
v.mayboroda@goqrate.com
Moscow, Russian Federation
National Research University “Higher School of Economics”
Kovalyuk
Vadim
lpkgarage@yandex.ru
Moscow, Russian Federation
Moscow Pedagogical State University
Golikov
Alexander
gad_92@inbox.ru
Moscow, Russian Federation
National Research University “Higher School of Economics”
Chulkova
Galina
gchulkova@hse.ru
Moscow, Russian Federation
Goltsman
Grigory
goltsman@rplab.ru
Shakhovoy
Roman
r.shakhovoy@goqrate.com
Passive optical scheme for BB84 protocol with polarization encoding on a silicon nitride platform
Quantum key distribution is a technology that promises unconditional security for protecting data. However, despite being based on the laws of quantum physics, its practical implementation may have critical vulnerabilities. One way to address this is to passively prepare quantum states. In our work, we demonstrate a passive optical scheme for the BB84 protocol with polarization encoding. We use a finite-difference time-domain method to simulate the elements of this scheme on the silicon nitride platform. Our simulations suggest that the polarization extinction ratio will be more than 20 dB, which will allow for the generation of quantum states with a QBER (quantum bit error rate) of less than 1%.
10.18721/JPM.163.151
535.8
quantum key distribution
polarization encoding
integrated photonics
https://physmath.spbstu.ru/article/2023.68.51/
CNF
RUS
289-293
Ilkiv
Igor
fiskerr@ymail.com
Kotlyar
Konstantin
konstantin21kt@gmail.com
Institute for Problems of Mechanical Engineering RAS
Osipov
Andrey
andrey.v.osipov@gmail.com
St. Petersburg, Russian Federation
Reznik
Rodion
moment92@mail.ru
Cirlin
George
george.cirlin@mail.ru
Germanium polytypes formation on AlGaAs nanowire surface
Raman spectroscopy was applied to investigate a series of Ge films grown on GaAs and AlGaAs nanowires by molecular beam epitaxy. The formation of both cubic and hexagonal Ge phases was revealed using Raman spectroscopy. DFT calculations of the volumetric energies suggest Ge-16R or Ge-6H hexagonal polytype.
10.18721/JPM.163.152
538.975
nanowire
molecular beam epitaxy
germanium
semiconductors
https://physmath.spbstu.ru/article/2023.68.52/
CNF
RUS
294-297
Federal State Budgetary Institution of Science K.A. Valiev Institute of Physics and Technology of the RAS Yaroslavl Branch
Grushevsky
Egor
yaregor@mail.ru
Yaroslavl, Russian Federation
Federal State Budgetary Institution of Science K.A. Valiev Institute of Physics and Technology of the RAS Yaroslavl Branch
Savinsky
Nikolay
savinski1@yandex.ru
Yaroslavl, Russian Federation
Trushin
Oleg
otrushin@gmail.com
Polishing methods for formation nanoporous anodized alumina
In the manufacture of the porous anodic aluminum oxide (PAAO) matrix, its quality and structural perfection primarily depend on both the grade of the aluminum alloy of the substrate and the quality of the surface. For the manufacture of PAAO, aluminum foil of high-purity aluminum with a content of 99.999% is mainly used. The technological scheme for obtaining highly organized porous aluminum oxide includes preliminary preparation of the foil surface of A9 alloy with an aluminum content of 99.91% by electrolytic plasma and electrochemical polishing methods in this work. Processing made it possible to obtain a surface with roughness parameters Ra = 0.008–0.038 microns. PAAO samples were obtained by double electrochemical anodizing of the prepared foil in 0.5 M oxalic acid, at a voltage of 60 V and a temperature of 25 °C and examined by scanning electron microscopy.
10.18721/JPM.163.153
539.232; 542.06; 546–1
aluminum
nanopores
electrolytic plasma
electropolishing
https://physmath.spbstu.ru/article/2023.68.53/
CNF
RUS
298-303
0009-0000-1468-6881
N.N. Semenov Federal Research Center of Chemical Physics, RAS
Shatov
Alexander
Moscow, Russian Federation
Astafiev
Artyom
astafiev.artyom@gmail.com
Shakhov
Aleksander
physics2007@yandex.com
Nadtochenko
Victor
nadtochenko@gmail.com
Effect of laser pulse duration on ultrafast laser synthesis of carbon dots from toluene
Pulsed laser irradiation produces luminescent carbon dots from toluene molecules in liquid medium. We examined influence of laser pulse duration on the rate of synthesis, optical properties and chemical composition of resulting carbon dots. Increase of synthesis rate with longer pulse duration demonstrates that synthesis is mediated by plasma formed through laser breakdown in medium.
10.18721/JPM.163.154
544.536
luminescent carbon dots
femtosecond laser pulses
laser-induced breakdown
nanomaterials
https://physmath.spbstu.ru/article/2023.68.54/
CNF
RUS
304-309
0000-0002-9723-5652
I.N. Ulyanov Chuvashia State University
Ksenofontov
Sergey
Cheboksary, Russian Federation
Chuvash State Pedagogical University named after I.Y. Yakovlev
Tashkova
Ksenia
ksuha-92@inbox.ru
Cheboksary, Russian Federation
0000-0003-2498-1192
I.N. Ulyanov Chuvashia State University
Lepaev
Alexander
Cheboksary, Russian Federation
0000-0001-8432-5635
I.N. Ulyanov Chuvashia State University
Vasilyeva
Olga
Cheboksary, Russian Federation
Chuvash State Pedagogical University named after I.Y. Yakovlev
Razina
Alisa
razina_ag@mail.ru
Cheboksary, Russian Federation
0000-0001-8645-2822
I.N. Ulyanov Chuvashia State University
Kokshina
Anna
Cheboksary, Russian Federation
0000-0001-8974-2307
I.N. Ulyanov Chuvashia State University
Kazakov
Valery
Cheboksary, Russian Federation
I.N. Ulyanov Chuvashia State University
Smirnov
Alexander
fizteh21@yandex.ru
Cheboksary, Russian Federation
0000-0002-4680-6224
I.N. Ulyanov Chuvashia State University
Abrukov
Victor
Cheboksary, Russian Federation
0000-0003-4860-3460
I.N. Ulyanov Chuvashia State University
Anufrieva
Darya
Cheboksary, Russian Federation
Morphology and elemental composition of whiskers of potassium carbonate in a pyrotechnic flame
Pyrotechnic aerosol-forming compositions are effective fire-extinguishing agents due to the high specific surface area of the dispersed particles formed. During combustion, the initial products of the composition turn into dispersed particles in the flame zone with sharp temperature gradients. The initial products of the composition are converted into dispersed particles in the flame zone with sharp temperature gradients. The maximum particle size distribution function is 3 µm. It is not possible to obtain a similar ensemble of dispersed particles by other physico-mechanical methods. Potassium carbonate as one of the target products is formed in the form of melt particles. Crystallization of potassium carbonate starts from the outside of the melt drop and ends with the formation of crystals with a developed surface. If the integrity of the crystal shell is violated due to a collision with the body of the sampler, the melt crystallizes with the formation of whiskers. Using a scanning electron microscope, the elemental composition of crystals and filamentous structures was determined as potassium carbonate. The observed phenomenon can be recommended as a method for obtaining filamentous crystals.
10.18721/JPM.163.155
536.46
whiskers
dispersed particle
flame
https://physmath.spbstu.ru/article/2023.68.55/
CNF
RUS
310-315
Kondrateva
Anastasia
kondrateva_n@spbau.ru
Komarevtcev
Ivan
vanec@aport.ru
Enns
Yakov
ennsjb@gmail.com
Kazakin
Aleksey
keha@newmail.ru
Lobachevsky State University of Nizhni Novgorod
Pitirimova
Elena
pitirimova@phys.unn.ru
Nizhny Novgorod, Russian Federation
0000-0002-2149-2978
Peter the Great St. Petersburg Polytechnic University
Studzinskii
Vitalii
svm.fl@mail.ru
Mishin
Maxim
maximvmishin@gmail.com, mmishin@spbstu.ru
P-6861-2015
10041592700
https://orcid.org/0000-0003-2511-0188
Karaseov
Platon
platon.karaseov@spbstu.ru
Photocatalytic properties of NiO – gold plasmonic nanocomposite
This study evaluates the photocatalytic activity of nickel oxide films synthesized by magnetron sputtering before and after thermal annealing. The effect of NiO film activation with gold nanoparticles is also investigated. Sample characterization performed by complementary techniques reveals formation of nanocrystalline cubic NiO and gold nanoparticles embedded into the NiO matrix. The ability of samples to decompose glycerol under ultraviolet (UV) and visible (VIS) light irradiation was tested. NiO films behave as active compound under UV light. Incorporation of gold nanoparticles into the oxide matrix not only enhances its activity under UV, but allows to decompose the model pollutant on the surface under the VIS light irradiation.
10.18721/JPM.163.156
539.8:538.975
nanocomposite materials
nickel oxide
gold nanoparticles
decomposition of organic pollutants
https://physmath.spbstu.ru/article/2023.68.56/
CNF
RUS
316-320
0000-0001-8974-2307
I.N. Ulyanov Chuvashia State University
Kazakov
Valery
Cheboksary, Russian Federation
0000-0001-8645-2822
I.N. Ulyanov Chuvashia State University
Kokshina
Anna
Cheboksary, Russian Federation
0000-0002-4680-6224
I.N. Ulyanov Chuvashia State University
Abrukov
Victor
Cheboksary, Russian Federation
Chuvash State Pedagogical University named after I.Y. Yakovlev
Razina
Alisa
razina_ag@mail.ru
Cheboksary, Russian Federation
I.N. Ulyanov Chuvashia State University
Smirnov
Alexander
fizteh21@yandex.ru
Cheboksary, Russian Federation
0000-0003-4860-3460
I.N. Ulyanov Chuvashia State University
Anufrieva
Darya
Cheboksary, Russian Federation
0000-0001-8432-5635
I.N. Ulyanov Chuvashia State University
Vasilyeva
Olga
Cheboksary, Russian Federation
0000-0002-9723-5652
I.N. Ulyanov Chuvashia State University
Ksenofontov
Sergey
Cheboksary, Russian Federation
0000-0003-2498-1192
I.N. Ulyanov Chuvashia State University
Lepaev
Alexander
Cheboksary, Russian Federation
Investigation of the optical properties of carbon nanofilms in sp, sp2, sp3-hybridized states and their use to determine the phase composition of carbon
The optical properties of carbon nanofilms in the sp (linear-chain carbon, LCC), sp2 (amorphous carbon) and sp3 (diamond-like carbon) hybridized state have been studied. The films were synthesized by the ion-plasma method and subjected to heat treatment (annealing) at various temperatures in air. Optical properties were measured by spectrophotometry and Raman scattering. Methods are proposed for determining the phase composition of carbon films of various sp hybridization states based on measurements of transmission spectra in the visible region of the spectrum.
10.18721/JPM.163.157
53.096
amorphous carbon
diamond-like carbon
linear-chain carbon
phase composition
spectrophotometry
Raman spectroscopy
decision trees
data mining
https://physmath.spbstu.ru/article/2023.68.57/
CNF
RUS
321-324
National Research Technological University (MISiS)
Zharkova
Alina
m146137@edu.misis.ru
Moscow, Russian Federation
National Research Technological University (MISiS)
Saranin
Danila
saranin.ds@misis.ru
Moscow, Russian Federation
National Research Technological University (MISiS)
Ishteev
Arthur
arturishteev@misis.ru
Moscow, Russian Federation
National Research Technological University (MISiS)
Melikhova
Diana
m2006742@edu.misis.ru
Moscow, Russian Federation
National Research Technological University (MISiS)
Didenko
Sergey
didenko@misis.ru
Moscow, Russian Federation
Luminescence kinetic of CsPbBr3 quantum dots
CsPbBr3 quantum dots have been studied as a luminophore for scintillators that could be used in technology of ionizing radiation detectors. The main optical process that characterizes luminophore parameters is the kinetic of luminescence. In order to study optical parameters one phase of CsPbBr3 quantum dots was isolated from the solution by using 400 nm filter and placed in toluene. Time resolved photoluminescence was measured for received sample by using ultraviolet laser diode (λ = 372 nm) as a source. Empirical expression from decay time plot was obtained. The expression described model of luminescence kinetic for CsPbBr3 quantum dots. According to the magnitude of empirical parameter received from the expression it was concluded that the recombination mechanism of luminescence on traps predominated for the studied samples of CsPbBr3 quantum dots. The expression could be used for modeling optical proprieties for nanosized CsPbBr3.
10.18721/JPM.163.158
535.376
CsPbBr3
quantum dots
luminophore
scintillator
kinetic of luminescence
https://physmath.spbstu.ru/article/2023.68.58/
CNF
RUS
325-329
Moscow Pedagogical State University
Evstratova
Irina
irina.evs02@gmail.com
Moscow, Russian Federation
0000-0001-6349-2979
Moscow Pedagogical State University
Demina
Polina
Moscow, Russian Federation
0000-0002-0332-1235
Moscow Pedagogical State University
Stepanov
Maxim
stepanov_me@mail.ru
Moscow, Russian Federation
M.M. Shemyakin and Yu.A. Ovchinnikov Institute of bioorganic chemistry of the RAS
Belitskaya
Ekaterina
belitskayakatya@yandex.ru
Moscow, Russian Federation
M.M. Shemyakin and Yu.A. Ovchinnikov Institute of bioorganic chemistry of the RAS
Zalygin
Anton
zalygin.anton@gmail.com
Moscow, Russian Federation
M.M. Shemyakin and Yu.A. Ovchinnikov Institute of bioorganic chemistry of the RAS
Oleynikov
Vladimir
voleinik@mail.ru
Moscow, Russian Federation
0000-0001-9646-1693
M.M. Shemyakin and Yu.A. Ovchinnikov Institute of bioorganic chemistry of the RAS
Generalova
Alla
Moscow, Russian Federation
Obtaining a phototoxic complex based on silver nanoparticles and riboflavin generating reactive oxygen species
As an alternative to antibiotics, antimicrobial photodynamic therapy method leads to the treatment on microorganisms and does not cause the development of resistance. This work demonstrates the use of flavin mononucleotide (FMN), which acts as a photosensitizer capable of generating singlet oxygen and other reactive oxygen species, that have a phototoxic effect to bacteria. The effectiveness of its action increases in the case of the use of silver nanoparticles with antibacterial activity. This study presents the development of approaches for the controlled increase in the effectiveness of antimicrobial photodynamic therapy using FMN-silver nanoparticle complexes. The formation of the complex is accompanied by the generation of radicals upon 365 nm irradiation, that has extreme dependence and also leads to a change in the fluorescence kinetics. The introduction of triethanolamine activator to FMN into the system leads to the generation of radicals. The method of synthesis of silver nanoparticles also significantly affects the optical properties of the formed complex.
10.18721/JPM.163.159
620.3
reactive oxygen species (ROS)
DPPH
riboflavin
triethanolamine
AgNPs
https://physmath.spbstu.ru/article/2023.68.59/
CNF
RUS
330-334
Frolov
Ilya
ilya-frolov88@mail.ru
Radaev
Oleg
oleg.radaev.91@mail.ru
0000-0003-4854-2813
Sergeev
Viacheslav
sva@ulstu.ru
Measurement of the threshold current in the local areas of the LED chip
A method for measuring the threshold current in local areas of an LED chip is presented, which consists in recording chip images at three low currents and pixel-by-pixel calculation of threshold current values by solving a system of equations compiled for three values of the approximating function. Approbation was carried out on commercial green and blue LEDs. It is shown that the distribution of threshold current values over the chip is uneven.
10.18721/JPM.163.160
621.382.088
LED
threshold current
measurement
https://physmath.spbstu.ru/article/2023.68.60/
CNF
RUS
335-340
0009-0003-8492-6045
Penza State University
Melnikov
Oleg
oleg-068@mail.ru
Penza, Russian Federation
Pecherskaya
Ekaterina
pea1@list.ru
Penza State University
Golubkov
Pavel
golpavpnz@yandex.ru
Penza, Russian Federation
Penza State University
Kozlov
Gennady
politeh@pnzgu.ru
Penza, Russian Federation
Aleksandrov
Vladimir
vsalexrus@gmail.com
Modeling of the dynamic current-voltage characteristic of micro-arc oxidation
The dynamic current-voltage characteristics of the micro-arc oxidation process were modeled by approximating the experimental curves. The hypothesis about the possibility of approximation of the anode ascending and cathode incident branches by exponential functions due to the presence of a valve effect in the metal-oxide-electrolyte system is confirmed. The selection of approximating curves for sections of micro-discharges is performed. The correctness of the approximating functions choice was evaluated by determining the approximation error at the experimental points. It is shown that it is expedient to use a polynomial function for approximating sections of anodic microdischarges, and an exponential function or a hyperbolic sine for sections of cathode ones. The limitations of the approach used in this work, which are associated with the approximate nature of the approximating functions, as well as with insufficient research into the mechanism of micro-arc oxide coatings formation are revealed. The simulation results can be used to develop a digital twin of the micro-arc oxidation process.
10.18721/JPM.163.161
519.651
micro-arc oxidation
digital twin
current-voltage curves
mathematical modelling
https://physmath.spbstu.ru/article/2023.68.61/
CNF
RUS
341-345
0009-0000-9721-9401
Penza State University
Emelyanov
Nikita
Penza, Russian Federation
Zhurina
Angelina
gelya.zhurina@mail.ru
Pecherskaya
Ekaterina
pea1@list.ru
0000-0001-5075-2727
Penza State University
Shepeleva
Juliya
Penza, Russian Federation
0009-0001-4255-1383
Penza State University
Maksov
Andrey
Penza, Russian Federation
A software-hardware complex for the study of electrophysical parameters of active dielectrics
Since the electrophysical parameters of ferroelectrics and the possibility of their application in functional electronics elements depend significantly on temperature, the work is aimed at solving the actual problem of creating a software-hardware complex that makes it possible to measure the temperature dependences of the capacitance and relative permittivity, taking into account the specifics of the physical effects inherent in these materials. Measurement procedures automation, which makes it possible to reduce the time for performing measurements and processing experimental data, eliminating subjective error and reducing a number of methodological errors is provided, since the electrophysical parameters measurements of ferroelectrics are possible only by indirect methods that require calculations according to the accepted models of the measurement object. As part of the software-hardware complex, it is proposed to use a computer-controlled heat chamber to study the temperature effect in a wide temperature range, which should cover the phase transitions of the studied materials and structures based on them. The principles and methods for measuring various functional dependencies are shown. For example, when studying the frequency characteristics of ferroelectrics, the test signal frequency is changed, the temperature characteristics are changed by the heat chamber temperature, and when studying capacitance-voltage characteristics, the bias voltage on the sample is changed. The article describes the operation of the software-hardware complex and the device of the thermal chamber. The result of the work was a multifunctional measuring device that allows to increase the technical and economic efficiency of the ferroelectrics study, by reducing the measurement time and reducing the measurement errors of material parameters (electric field strengths, sample polarizations and electrical impedance), depending on the influencing factors (range up to 100 °C).
10.18721/JPM.163.162
537.226
ferroelectrics
temperature dependence
software and hardware complex
measurement
https://physmath.spbstu.ru/article/2023.68.62/
CNF
RUS
346-351
Pecherskaya
Ekaterina
pea1@list.ru
Zinchenko
Timur
scar0243@gmail.com
0000-0001-9602-7221
Research Institute of Electronic and Mechanical Devices
Gurin
Sergey
Penza, Russian Federation
Penza State University
Golubkov
Pavel
golpavpnz@yandex.ru
Penza, Russian Federation
Aleksandrov
Vladimir
vsalexrus@gmail.com
Synthesis of thin-film structures of vanadium oxide by spray pyrolysis
Among semiconductors based on transition metal oxides, vanadium pentoxide has generated considerable interest in recent decades due to its wide range of applications. The physical properties of the films depend on certain parameters, such as the level and ratio of dopants, substrate temperature, deposition conditions, heat treatment, substrate material. In this study, it was found that increasing the substrate temperature resulted in an increase in the transparency of the films; as the temperature increased, the microstructure of the film became thinner, leading to an increase in the refractive index; reducing structural defects decreased the extinction coefficient of the films.
10.18721/JPM.163.163
620.1.08
vanadium pentoxide
spray pyrolysis
information-measuring control system
transition metal oxides
https://physmath.spbstu.ru/article/2023.68.63/
CNF
RUS
352-356
ITMO University
Andryushkin
Vladislav
vvandriushkin@itmo.ru
St. Petersburg, Russian Federation
0000-0003-2500-1715
Ioffe Institute
Maleev
Nicolai
maleev.beam@mail.ioffe.ru
St. Petersburg, Russian Federation
0000-0002-7221-0117
Ioffe Institute
Kuzmenkov
Aleksandr
kuzmenkov@mail.ioffe.ru
St. Petersburg, Russian Federation
Kulagina
Marina M.
Marina.Kulagina@mail.ioffe.ru
Guseva
Yulia
Guseva.Julia@mail.ioffe.ru
0000-0002-2181-5300
Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS
Vasil’ev
Alexey
St. Petersburg, Russian Federation
Ioffe Institute
Blokhin
Sergei
blokh@mail.ioffe.ru
St. Petersburg, Russian Federation
Ioffe Institute
Bobrov
Mikhail
bobrov.mikh@gmail.com
St. Petersburg, Russian Federation
0000-0002-3307-6226
Ioffe Institute
Troshkov
Sergey
S.Troshkov@mail.ioffe.ru
St. Petersburg, Russian Federation
0009-0001-3683-5558
ITMO University
Papylev
Denis
dspapylev@itmo.ru
St. Petersburg, Russian Federation
ITMO University
Kolodeznyi
Evgenii
evgenii_kolodeznyi@itmo.ru
St. Petersburg, Russian Federation
Submicron Heterostructures for Microelectronics Research and Engineering Center, RAS
Ustinov
Victor
info@ntcm-ras.ru
St. Petersburg, Russian Federation
Effect of sulfide-polyamide passivation on dark currents of the InAlAs/InGaAs/InP avalanche photodiodes
The paper presents a study of effect the mesa structure surface passivation on performance of InAlAs/InGaAs/InP avalanche photodiodes. The mesa passivation was made by using treatment in an aqueous solution of ammonium sulfide and subsequent protection by a layer of polyamide (sulfide-polyamide passivation). As a result, avalanche photodiodes with a photosensitive area of 32 microns reproducibly demonstrate dark current below 10–20 nA at the level of 0.9 of the breakdown voltage. A homogeneous distribution of the breakdown voltage value over the sample area at -85V, as well as long-term stability of avalanche photodiode characteristics were observed.
10.18721/JPM.163.164
621.383.523
sulfide-polyamide passivation
avalanche photodiode
mesa structure
https://physmath.spbstu.ru/article/2023.68.64/
CNF
RUS
357-361
Perm State University
Pankov
Anatoliy
lab.photon.psu@gmail.com
Perm, Russian Federation
Perm State University
Sokolchik
Darya
dsokolchik@rambler.ru
Perm, Russian Federation
Perm State University
Zhukov
Leonid
leonidgp@bk.ru
Perm, Russian Federation
0000-0001-9199-2487
Perm State University
Shmyrova
Anastasia
shmyrova@psu.ru
Perm, Russian Federation
0000-0001-9729-628X
Perm State University
Ponomarev
Roman
rsponomarev@gmail.com
Perm, Russian Federation
Measuring the focal length of a tapered fiber: experiment and modeling in the approximation of geometric optics
To connect a fiber light guide with a waveguide of a photonic integrated circuit fiber lenses are usually used. The parameters of these lenses must be certified. This paper describes a technique for fiber lens focal length measuring method of longitudinal displacement of a lensed fiber from which light comes out and a flat tipped fiber, which is a radiation receiver. The measurement results received by this method were compared with the results received using the Fabry-Perot interferometer. Additionally, light propagation in the system under study was modeled in the approximation of geometric optics.
10.18721/JPM.163.165
681.7.068
tapered fiber
focal length
Fabry-Perot interferometer method
longitudinal displacement method
https://physmath.spbstu.ru/article/2023.68.65/
CNF
RUS
362-367
Shishkin
Ivan
shishkinivan9@gmail.com
Samara National Research University
Shihskin
Vladislav
vladshishi@yandex.ru
Samara, Russian Federation
0009-0000-1904-9857
Samara National Research University
Shestakov
Dmitriy
shestakov.da@ssau.ru
Samara, Russian Federation
Development of a device for measuring current-voltage and power-voltage characteristics of experimental solar cells
This article presents the implementation of an experimental device for measuring volt-ampere and volt-watt characteristics based on the current and voltage sensor INA219. The characteristics obtained on the experimental device are similar in terms of the values obtained using the Keithley 2450 meter source, whose accuracy is 10‒9 A. However, due to problems with the calibration of the manual potentiometer, it is not possible to get a smoother line. The research results are used to develop an autonomous system that takes into account the illumination and surface temperature of the solar cell and the radiation background of the environment.
10.18721/JPM.163.166
53.083.92, 620.91
photovoltaics
solar energy
Arduino Uno
volt-ampere characteristic
volt-watt characteristic
https://physmath.spbstu.ru/article/2023.68.66/
CNF
RUS
368-373
Penza State University
Golubkov
Pavel
golpavpnz@yandex.ru
Penza, Russian Federation
Pecherskaya
Ekaterina
pea1@list.ru
0000-0001-9602-7221
Research Institute of Electronic and Mechanical Devices
Gurin
Sergey
Penza, Russian Federation
Aleksandrov
Vladimir
vsalexrus@gmail.com
0000-0002-3240-7222
Penza State University
Artamonov
Dmitriy
dmitrartamon@yandex.ru
Penza, Russian Federation
0009-0001-4255-1383
Penza State University
Maksov
Andrey
Penza, Russian Federation
Influence of process parameters on the properties of microarc oxide coatings
In this work, oxide coatings on aluminum samples were obtained by the method of micro-arc oxidation at a sinusoidal current in an anode-cathode alloy with an anode and cathode current ratio of 1, with a current approximation of 10.88; 13.99; 17.10; 20.21; 23.32 A/dm2 in four electrolytes containing 0.5 g/l NaOH and 80, 90, 100 and 110 g/l Na2SiO3. An analytical description of the thickness and porosity dependence of micro-arc oxide coatings on the decrease in current, treatment time, and electrolyte components detection in the form of empirical regression formulas is obtained. Based on the obtained equations a technology for the formation of micro-arc oxide coatings with desired properties was proposed. As a result of experimental verification, the reproducibility of the technology for obtaining micro-arc oxide coatings with a thickness of 25 μm and minimal porosity (P = 19.5%) was confirmed. The relative error of the appearance reproducibility does not exceed ± 0.5%. The results of the study were used in the development of intelligent algorithms that underlie the digital twin of the micro-arc oxidation process.
10.18721/JPM.163.167
519.651
micro-arc oxidation
digital twin
the relationship of technological parameters and properties of coatings
empirical regression formulas
technique for obtaining coatings with desired properties
https://physmath.spbstu.ru/article/2023.68.67/
CNF
RUS
374-348
Dvurechenskiy
Anatoly
dvurech@isp.nsc.ru
Petrov
Ivan
i.petrov@goqrate.com
Moscow technical university of communications and informatics
Tumachek
Alexander
a.s.tumachek@mtuci.ru
Moscow, Russian Federation
Menskoy
Daniil
d.meskoy@goqrate.com
Gerasin
Ilia
i.gerasin@goqrate.com
Rudavin
Nikita
n.rudavin@goqrate.com
Moscow Institute of Physics and Technology (National Research University)
Kupriyanov
Pavel
kupriianov.pa@phystech.edu
Moscow, Russian Federation
Shakhovoy
Roman
r.shakhovoy@goqrate.com
Influence of detector dead time on the key generation rate in measurement-device-independent quantum key distribution
Single photon detectors are required for registration of qubits in quantum key distribution. Real detectors have non-zero dead time, which leads to a reduction in the key generation rate. In our work, we evaluate the influence of detector dead time on the key generation rate in measurement-device-independent quantum key distribution scheme with 4 detectors. We compare the analytical estimate of the key generation rate in assumption of synchronous dead time and numerical simulations where asynchronous dead time is assumed.
10.18721/JPM.163.168
53.089.52
quantum cryptography
quantum key distribution
measurement-device-independent quantum key distribution
MDI QKD
single-photon detector
dead time
https://physmath.spbstu.ru/article/2023.68.68/
CNF
RUS
379-383
Bonch-Bruevich Saint Petersburg State University of Telecommunications
Pozdnyakov
Artem
me022@mail.ru
St. Petersburg, Russian Federation
0000-0002-1945-1050
Bonch-Bruevich Saint Petersburg State University of Telecommunications
Andreeva
Elena
St. Petersburg, Russian Federation
Experimental study of data transmission in a long-haul passive span fiber-optic line with high information capacity
In the course of an experimental study, the possibility of building a line with an information capacity of 1 Tbit/s km using standard components for DWDM systems with nonlinear dispersion compensation was shown. The calculation of the optimal parameters of the system has been carried out. It is shown that for given values of range L, chromatic dispersion D, transmission rate B, it is possible to choose the optimal input power of bit pulses P0, which provides the best signal-to-noise ratio at the reception.
10.18721/JPM.163.169
621.396.2
fiber optic cable
optical fiber
dispersion
optical soliton
optical communication channel
laser radiation
https://physmath.spbstu.ru/article/2023.68.69/
CNF
RUS
384-389
0000-0002-5420-6181
Nizameev
Irek
irek.rash@gmail.com
Gainullin
Radis
radisgainullin@gmail.com
Nizameeva
Guliya
guliya.riv@gmail.com
St. Petersburg Electrotechnical University "LETI"
Kuznetsov
Vladimir
vvkuznetsov@inbox.ru
St. Petersburg, Russian Federation
0000-0002-1297-7092
Kazan National Research Technical University named after A.N. Tupolev-KAI
Spiridonov
Sergey
Kazan, Russian Federation
Interdigital gold electrodes for a conductometric gas sensor on the glass surface
Modern cities with developed industries suffer from a large amount of emissions into the atmosphere. Therefore, for modern scientists, the task of creating sensors for environmental pollutants is urgent. This paper considers one of the tasks of creating a gas-sensitive element of a conductometric sensor for greenhouse gases in the atmosphere. An important component of a gas-sensitive element is a carrier substrate with a branched system of electrodes. The electrode system must be stable and have chemical, thermal, and mechanical resistance. The paper develops a technique for creating a system of gold electrodes for a gas-sensitive element on the surface of a glass substrate. The increasing mechanical strength of electrodes is considered. In general, the mechanical strength of thin films depends on the intralayer, interlayer bonding of components and adhesion to the carrier substrate. In this work, it is sufficient to use one numerical parameter, which characterizes the mechanical resistance of the layer as a whole. The method of determining nano hardness was used to control the mechanical strength of the electrodes. Nanohardness was measured by atomic force microscopy probe lithography.
10.18721/JPM.163.170
504.064.36
gas sensor
electrodes
PVD
adhesion
roughness
nanohardness
atomic force microscopy
https://physmath.spbstu.ru/article/2023.68.70/
CNF
RUS
390-395
Nizameeva
Guliya
guliya.riv@gmail.com
0000-0003-0095-5205
Arbuzov Institute of Organic and Physical Chemistry, FRC Kazan Scientific Center of RAS
Lebedeva
Elgina
elgina.lebed@mail.ru
Kazan, Russian Federation
0000-0002-5420-6181
Nizameev
Irek
irek.rash@gmail.com
Optical and electrochemical properties of a composite material based on PEDOT:PSS and oriented nickel fibers
The paper presents the results of electrochemical and conductometric studies of poly (3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) and composite material PEDOT:PSS/oriented nickel fibers in the presence of carbon dioxide. It has been shown that the introduction of oriented nickel fibers into the PEDOT:PSS polymer matrix improves the electrochemical properties of the polymer. The nickel fibers in the polymer bulk act as a catalyst and thus shift the PEDOT:PSS reduction peak towards positive potentials. Gas sensing elements for a conductometric sensor were fabricated by depositing PEDOT:PSS and composite films PEDOT:PSS/oriented nickel fibers on the surface of a glass substrate with interdigitated gold electrodes. Special equipment was designed to study the sensory properties of gas-sensitive elements. Using this equipment, we measured the sensory response Rr and the response time \(\tau\)0.9 of finished gas-sensitive elements in a carbon dioxide environment. Conductometric studies have shown that the response time \(\tau\)0.9 of the composite material to CO2 is shorter, and the sensory response Rr is twice as long as compared to a pure PEDOT:PSS film. As a result of the generalization of the experimental data, the possibility of using the composite material PEDOT-PSS/oriented nickel fibers to create electrochemical and conductometric sensors for carbon dioxide was shown.
10.18721/JPM.163.171
504.064.36
gas sensor
PEDOT:PSS
electrochemical cell
band gap
sensor response
response time
https://physmath.spbstu.ru/article/2023.68.71/
CNF
RUS
396-401
0009-0005-3707-2221
Peter the Great St. Petersburg Polytechnic University
Shevchenko
Daniil
St. Petersburg, Russian Federation
Peter the Great St. Petersburg Polytechnic University
Provodin
Daniil
provodindanya@gmail.com
St. Petersburg, Russian Federation
Davydov
Vadim
davydov_vadim66@mail.ru
Development of a compact high-resolution digital microscope for the research of micro- and nanostructures
The need to develop a compact mobile high-resolution digital microscope for the research is substantiated. Disadvantages of modern mobile digital microscopes designs are considered. The requirements for providing the necessary characteristics in a compact microscope in terms of resolution, image contrast and size are determined. The design of the low-cost compact mobile digital microscope is developed and assembled. The construction weight with micro-objectives, lightning system and power battery is less than 2 kg. In a disassembled state all components are placed in a case the size of 35×10×15 cm. The condition to ensure necessary magnification is introduced. According to this condition, various parameters of the microscope are evaluated and compared with laboratory microscopes parameters. The results of studies of different objects are presented with the resolution from 2 μm to 90 nm and magnification up to 1250x.
10.18721/JPM.163.172
535.8
nanostructures
digital microscope
image
resolution
different materials
https://physmath.spbstu.ru/article/2023.68.72/
CNF
RUS
402-407
Zinchenko
Timur
scar0243@gmail.com
Pecherskaya
Ekaterina
pea1@list.ru
0000-0001-9319-2475
Research Institute of Electronic and Mechanical Devices
Novichkov
Maksim
Penza, Russian Federation
Penza State University
Kozlov
Gennady
politeh@pnzgu.ru
Penza, Russian Federation
0000-0002-2697-3260
Penza State University
Karpanin
Oleg
Penza, Russian Federation
Synthesis of thin-film structures of tungsten oxide by the spray-pyrolysis method
Tungsten oxide (WO3) is a transparent semiconductor material that has been extensively studied for applications in electrochromic windows. Polycrystalline thin films of p-type tungsten oxide (WO3) were deposited by spray-pyrolysis using tungsten hexachloride (WCl6) as a precursor. The technological synthesis regimes are considered and the current-voltage characteristics of the obtained coatings are constructed. Films with high porosity, high average surface roughness (67 nm) and low transparency were obtained at a deposition temperature of 280 °C. A WO3 crystal layer with peaks corresponding to the monoclinic structure was obtained after annealing at a temperature of 400 °C. Higher values of the transmission coefficient are achieved with a decrease in the molarity of the solution and with an increase in the deposition temperature.
10.18721/JPM.163.173
620.1.08
tungsten oxide
spray-pyrolysis
information-measuring control system
transition metal oxides
electrochromic windows
https://physmath.spbstu.ru/article/2023.68.73/
CNF
RUS
408-412
Moscow Institute of Physics and Technology (National Research University)
Patarashvili
Anton
patarashvili@phystech.edu
Moscow, Russian Federation
0000-0003-4164-178X
Moscow Institute of Physics and Technology (National Research University)
Kornyushin
Denis
kornyushin.d@phystech.edu
Moscow, Russian Federation
Moscow Institute of Physics and Technology (National Research University)
Ivanov
Mattew
ms.ivanov@phystech.edu
Dolgoprudny, Moscow region, Russian Federation
Moscow Institute of Physics and Technology (National Research University)
Aleshina
Marina
aleshina.miu@phystech.edu
Moscow, Russian Federation
Moscow Institute of Physics and Technology (National Research University)
Efimov
Alexey
efimov.aa@mipt.ru
Dolgoprudny, Moscow region, Russian Federation
Ivanov
Victor
ivanov.vv@mipt.ru
Development and research of charger operation modes type “needle-plate” for nanoparticle charging
A simple needle-plate charger with a gap of 16 mm for unipolar charging of silver nanoparticles in an air stream has been developed and manufactured. The charging efficiency and particle electrostatic losses of the designed charger were evaluated at various applied voltages and aerosol flow rates. With an increase in the applied voltage (corona discharge current) and the aerosol flow rate at a constant applied voltage, a decrease in the charging efficiency and an increase in the total losses of aerosol particles are observed. A charging efficiency of 43% with 38% electrostatic loss was achieved at a voltage of 8.1 kV (5.5 µA) and a flow of 10 L/min.
10.18721/JPM.163.174
537.563.3
charging efficiency
aerosol nanoparticle
unipolar charging
corona charger
https://physmath.spbstu.ru/article/2023.68.74/
CNF
RUS
413-417
0000-0001-9780-9137
Moscow Institute of Physics and Technology (National Research University)
Musaev
Andrey
Moscow, Russian Federation
Research Center of Biotechnology RAS
Avdanina
Darya
d.avdanina@gmail.com
Moscow, Russian Federation
Research Center of Biotechnology RAS
Kalinin
Stanislav
stanislas-kalinin-1990@mail.ru
Moscow, Russian Federation
Moscow Institute of Physics and Technology (National Research University)
Volkov
Ivan
volkov.ia@mipt.ru
Dolgoprudny, Moscow region, Russian Federation
0000-0002-8672-8638
Research Center of Biotechnology RAS
Zhgun
Alexander
zzhgun@mail.ru
Moscow, Russian Federation
Application of Raman spectroscopy and SERS for the detection of fungi-destructors capable of biodegradation of cultural heritage at the State Tretyakov Gallery
We explored the possibility of using Raman spectroscopy and SERS for the analysis of molds using the example of strains collected from exhibits of the State Tretyakov Gallery. The fungi contained in the samples were cultivated on the surface of aluminum oxide substrates containing plasmonic nanostructures based on silver and gold nanoparticles. The mapping of samples using Raman spectroscopy made it possible to visualize the distribution of organic substances contained in mold fungi. The purpose of the study is to develop a methodology for the identification of fungi, including those that destroy cultural heritage.
10.18721/JPM.163.175
543.424.2:582.28
nanoparticles
silver
gold
fungi
plasmonic nanostructures
Raman spectroscopy
SERS
mapping
diagnostics of biodeterioration of cultural heritage
https://physmath.spbstu.ru/article/2023.68.75/
CNF
RUS
418-422
0009-0009-0170-9656
Institute for Analytical Instrumentation RAS
Yamanovskaya
Anastasiia
a.yamanovskaya@gmail.com
St. Petersburg, Russian Federation
0000-0002-2083-4091
Serov
Egor
egorserov22021998@gmail.com
Kruglov
Vladislav
vladislav.kruglov98@yandex.ru
Reznik
Vladislav
vlreznik97@gmail.com
0009-0001-1978-8323
Institute for Analytical Instrumentation RAS
Minakov
Denis
minakov.da@iapran.ru
St. Petersburg, Russian Federation
Development of a sample preparation unit
The necessity of using a single-molecule sequencer in biology and medicine is substantiated. The role of sample preparation in conducting these studies is noted. It was noted that with increasing requirements for the results of genetic studies, it is necessary to modernize and develop new designs of sample preparation units. The study performs the sample preparation unit, which can be applied for experiments with biological materials, particularly for genetic research. The main components of the system were introduced, such as position module, sample loader and temperature control module. Test trials of the water dozing and thermal stabilization were carried out.
10.18721/JPM.163.176
53.084
sample preparation
automatic dosing
temperature control
dispenser
thermostat
biological materials
https://physmath.spbstu.ru/article/2023.68.76/
CNF
RUS
423-427
Federal State Budgetary Institution of Science K.A. Valiev Institute of Physics and Technology of the RAS Yaroslavl Branch
Shlepakov
Pavel
p.shlepakov@bk.ru
Yaroslavl, Russian Federation
Uvarov
Ilia
i.v.uvarov@bk.ru
Abramychev
Andrey
irumiantsieva@bk.ru
Svetovoy
Vitaliy
svetovoy@yandex.ru
Testing the fast electrochemical micropump with PDMS membrane
Microfluidic systems are widely used in various applications, including precise delivery of drugs into organs or tissues. The drug delivery system should have a compact pump with a high flow rate and precise dosage accuracy. In this work, we propose a novel micropump based on an electrochemical actuator that meets these requirements. It contains a glass substrate with three actuators, and a silicon substrate with a channel for a pumped liquid. Side walls of the actuators and channels are made of photoresist SU-8. The pumping is performed peristaltically. The working part of the pump has a size of 3 mm3, which is an order of magnitude smaller in comparison with conventional devices. Compact size ensures ultra-precise dosage of 0.14 nl that is necessary for drug delivery systems. Design and testing procedure are described in detail, and working characteristics are provided.
10.18721/JPM.163.177
53.06
MEMS
microfluidics
micropump
alternating polarity electrolysis
electrochemical actuator
https://physmath.spbstu.ru/article/2023.68.77/
CNF
RUS
428-433
Belozerov
Igor
igas2580@yandex.ru
Uvarov
Ilia
i.v.uvarov@bk.ru
A cantilever type MEMS switch with enhanced contact force: the first results
MEMS switches are of particular interest for advanced radio electronic systems, but their application is limited by the lack of reliability. The switch develops low contact force, which leads to high and unstable contact resistance. The force is typically increased by using complex shaped and large area electrodes, while a simple and compact design is more preferable. This work presents a switch based on a miniature cantilever. The contact force is enhanced by selecting the vertical dimensions of the structure. The trial samples are fabricated and tested. Their performance is compared with theoretical predictions.
10.18721/JPM.163.178
621.3
MEMS switch
cantilever
contact force
contact resistance
pull-in voltage
https://physmath.spbstu.ru/article/2023.68.78/
CNF
RUS
434-438
0000-0001-6869-1213
Alferov University
Vyacheslavova
Ekaterina
cate.viacheslavova@yandex.ru
0000-0002-0061-6687
Alferov University
Uvarov
Alexander
lumenlight@mail.ru
0000-0002-3503-7458
St. Petersburg Electrotechnical University "LETI"
Maksimova
Alina A.
deer.blackgreen@yandex.ru
0000-0002-4894-6503
Alferov University
Baranov
Artem I.
baranov_art@spbau.ru
St. Petersburg, Russian Federation
0000-0002-7632-3194
Alferov University
Gudovskikh
Alexander
gudovskikh@spbau.ru
Heterojunction solar cells based on nanostructured black silicon
The influence of the black silicon (b-Si) morphology on the photovoltaic properties of heterojunction solar cell is investigated. We used cryogenic etching (-150 °C) in a SF6/O2 gas mixture to obtain b-Si structures and a total reflectance in the range of 1–3%. The height of the obtained b-Si structures varies from 200 to 760 nm, the shape from nanowires to cone-shaped. The heterojunction a-Si:H/c-Si was fabricated by PECVD at a temperature of 250 °C. The best heterojunction solar cell based on a 200 nm height cone-shaped b-Si demonstrates a promising passivation properties reaching open circuit voltage of 648 mV. With a short-circuit current density of 29.7 mA/cm2 and fill factor of 67% a power conversion efficiency of 12.8% was achieved. The solar cells based on cone-shaped b-Si gain also in external quantum efficiency compared to nanowire b-Si.
10.18721/JPM.163.179
621.383.51
black silicon
amorphous silicon
heterojunction solar cell
https://physmath.spbstu.ru/article/2023.68.79/
CNF
RUS
439-443
Alferov University
Sinitskaya
Olesya
olesia-sova@mail.ru
St. Petersburg, Russian Federation
0000-0003-1835-1629
Alferov University
Shubina
Kseniia
rein.raus.2010@gmail.com
St. Petersburg, Russian Federation
Mokhov
Dmitry
mokhov@spbau.ru
0000-0002-0061-6687
Alferov University
Uvarov
Alexander
lumenlight@mail.ru
Mizerov
Andrey
andreymizerov@rambler.ru
Nikitina
Ekaterina
mail.nikitina@mail.ru
The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
In this work ultraviolet metal-semiconductor-metal and metal-insulator-semiconductor photodetectors based on GaN epitaxial layers were fabricated. N-polar GaN epitaxial layers were synthesized by plasma-assisted molecular beam epitaxy on nitrided sapphire substrates. To form Schottky barrier contacts a Ni/Au metallization was chosen. SiO2 layers were deposited by plasma enhanced chemical vapor deposition. I–V characteristics of fabricated photodetectors were studied. It was found that the dark current of the photodetectors decreased by 49 times after introducing a 20 nm thick SiO2 dielectric layer, and the photocurrent to dark current ratio increased by a maximum of 35 times.
10.18721/JPM.163.180
621.383.524
GaN
SiO2
ultraviolet photodetector
metal-semiconductor-metal
metal-insulator-semiconductor
https://physmath.spbstu.ru/article/2023.68.80/
CNF
RUS
444-448
Saratov State University
Kozlowski
Alexander
kozlowsky@bk.ru
Saratov, Russian Federation
0000-0003-3281-8352
Saratov State University
Serdobintsev
Alexey
alexas80@bk.ru
Saratov, Russian Federation
Stetsyura
Svetlana
stetsyurasv@mail.ru
Photo-assisted adsorption of enzyme molecules onto a surface-modified silicon substrate
In this work, the influence of illumination on the adsorption of enzyme molecules from an aqueous solution on a single-crystal silicon substrate with a layer of amorphous silicon (a-Si) is shown by atomic force microscopy. It was shown that the effect of illumination during the formation of an enzyme layer depends both on the type of Si conductivity and on the presence of an a-Si layer on the surface. The 2-beam interference pattern on the surface of the n-Si/a-Si structure, fabricated by illumination with a wavelength of 491 nm before the adsorption process, made it possible to fabricate ordered rows of the precipitated enzyme. This pattern not observed for p-Si/a-Si structure or bare substrate of single-crystal Si without the amorphous silicon layer. The developed technique is promising for the fabrication of multienzyme coatings for multiplex analysis using silicon transducer.
10.18721/JPM.163.181
538.975
atomic force microscopy
amorphous silicon
surface charge
enzyme
layer-by-layer adsorption
https://physmath.spbstu.ru/article/2023.68.81/
CNF
RUS
449-453
Kozlovskaya
Ekaterina
k89296190714@gmail.com
0000-0002-7012-1823
National Research University of Electronic Technology
Kurbanbaeva
Diana
Moscow, Russian Federation
Tsarik
Konstantin
tsarik_kostya@mail.ru
Simulation and analysis of heterostructures for normally-off p-channel GaN transistor
This article presents the results of simulation the heterostructure of normally-off p-channel transistor. The design of the upper layers of the heterostructure was determined to induce the appearance of a 2DHG at the p-GaN/AlGaN heterojunction. By studying the band diagrams, the dependence of the transistor behavior on the thickness of the p-GaN and the impurity concentration within it is demonstrated for the p-channel device. Additionally, through analysis of the current-voltage characteristics the relationship between the formation of a normally-on or normally-off transistor and the thickness of the p-GaN layer, as well as the impurity concentration within it, was determined.
10.18721/JPM.163.182
621.382.323
heterostructure
power transistor
p-channel
p-GaN
AlGaN
https://physmath.spbstu.ru/article/2023.68.82/
CNF
RUS
454-458
0009-0005-3723-5924
Federal State Budgetary Institution of Science K.A. Valiev Institute of Physics and Technology of the RAS Yaroslavl Branch
Morozov
Matvey
matvey11212@gmail.com
Yaroslavl, Russian Federation
Uvarov
Ilia
i.v.uvarov@bk.ru
Modeling of a capacitive MEMS switch with “floating” electrode
Primary characteristic of a capacitive MEMS switch is the ratio of capacitances in the open and closed states. Conventional switches have this ratio from several units to several tens. However, it can be significantly increased by mounting a “floating” electrode onto the transmission line. The analytical approach provides the capacitance ratio of the modified switch as high as 105. Finite element simulation takes parasitic capacitance into account and gives significantly lower value. In this work, the dependence of capacitive characteristics and S-parameters on the substrate properties is investigated. The ways for enhancing the switch performance are proposed.
10.18721/JPM.163.183
621.3
MEMS switch
capacitance ratio
floating potential
finite element method
https://physmath.spbstu.ru/article/2023.68.83/
CNF
RUS
459-462
0000-0002-6030-2532
National Research Technological University (MISiS)
Losev
Anton
losev.av@misis.ru
Moscow, Russian Federation
0000-0001-7319-8001
National Research Technological University (MISiS)
Filyaev
Alexandr
a.filiaev@misis.ru
Moscow, Russian Federation
0000-0002-3252-2984
National Research Technological University (MISiS)
Zavodilenko
Vladimir
v.zavodilenko@misis.com
Moscow, Russian Federation
0000-0001-8865-556X
National Research Technological University (MISiS)
Pavlov
Igor
pavlov.id@misis.ru
Moscow, Russian Federation
Investigation of the avalanche delay effect in sine-gated single-photon detector
A sine-gated single-photon detector (SPD) intended for use in a quantum key distribution (QKD) system is considered in this paper. An “avalanche delay” effect in the sine-gated SPD is revealed. This effect consists in the appearance of an avalanche triggered at the next gate after the photon arrival gate. It has been determined experimentally that the nature of this effect is not related to the known effects of afterpulsing or charge persistence. This effect negatively affects the overall error rate in the QKD system. The influence of the main detector control parameters, such as temperature, gate amplitude and comparator’s threshold voltage, on the avalanche delay effect was experimentally established.
10.18721/JPM.163.184
53.082.52; 621.3.084.2
avalanche delay
single-photon avalanche diodes
single-photon detector
https://physmath.spbstu.ru/article/2023.68.84/
CNF
RUS
463-467
Tikhomirov
Vladimir
greenbob54@gmail.com
Chizhikov
Sergey
chigikov95@mail.ru
Gudkov
Alexander
profgudkov@gmail.com
St. Petersburg Electrotechnical University "LETI"
Ignatovich
Roman
roman.ignatowi413@gmail.com
St. Petersburg, Russian Federation
Gudkov
Grigoriy
ooo.giperion@gmail.com
Numerical simulation of the parameters of an energy-efficient low-noise transistor for use in the amplification path of a miniature radiothermograph
The high current consumption of the amplifying cascades in the miniature case of the radiothermograph with the microcircuits existing today leads to a significant increase in the temperature inside the case with the reference noise source located there and subsequent heating of the surrounding tissues with distortion of the picture of the real field of internal temperatures of the biobject. The existing problem can be solved by creating new active elements of specialized monolithic microwave chips – low-noise transistors, for which the requirements of high energy efficiency, primarily low heat dissipation into the surrounding space, low noise level and sufficient gain will be taken into account when designing heterostructures. The paper presents the results of numerical simulation of a low-noise transistor with low power consumption for use as part of monolithic integrated circuits of an energy-efficient low-noise amplifier for use in the amplifying path of a miniature radiothermograph.
10.18721/JPM.163.185
621.382
medical radiothermograph
MIC microwave
energy consumption
energy efficiency
https://physmath.spbstu.ru/article/2023.68.85/
CNF
RUS
468-472
0009-0009-4023-6185
Alferov University
Pozdeev
Vyacheslav
pozdeev99va@gmail.com
St. Petersburg, Russian Federation
0000-0002-0061-6687
Alferov University
Uvarov
Alexander
lumenlight@mail.ru
0000-0002-7632-3194
Alferov University
Gudovskikh
Alexander
gudovskikh@spbau.ru
0000-0002-3503-7458
St. Petersburg Electrotechnical University "LETI"
Maksimova
Alina A.
deer.blackgreen@yandex.ru
0000-0001-6869-1213
Alferov University
Vyacheslavova
Ekaterina
cate.viacheslavova@yandex.ru
Study of the effect of solvents and surfactants on electrical properties of PEDOT:PSS films
It was demonstrated that non-ionic surfactants reduce the solution's surface tension, improving the wettability of hydrophobic substrates. Even 0.05% of Neonol can significantly affect the surface tension of the aqueous PEDOT:PSS solution on fused silica substrates. However, higher percentages of Neonol increase the electrical resistivity of the polymer layer. For film deposition, a minimum neonol volume fraction of 0.005 vol.% was required. In this work examined how adding different volume fractions of dimethyl sulfoxide affected the electrical conductivity of PEDOT:PSS films. Two methods were used to add dimethyl sulfoxide to the films: the pre-adding method and the post-spin-rinsing method. The electrical properties of the films with and without the addition of dimethyl sulfoxide were measured. Films produced using the dimethyl sulfoxide post-spin-rinsing method exhibited the highest conductivity achieved in this paper, reaching 780 S/cm. The results of time degradation studies conducted during the research demonstrate that the electrical conductivity of the samples, on average, decreased by more than half after a two-week period.
10.18721/JPM.163.186
537.312
PEDOT:PSS
poly(3,4-ethylenedioxythiophene) polystyrene sulfonate
conductive polymer
surfactants
neonol
electrical resistance
https://physmath.spbstu.ru/article/2023.68.86/
CNF
RUS
473-478
Alferov University
Vtorygin
Georgii
piespogany@gmail.com
St. Petersburg, Russian Federation
0000-0002-4894-6503
Alferov University
Baranov
Artem I.
baranov_art@spbau.ru
St. Petersburg, Russian Federation
0000-0002-0061-6687
Alferov University
Uvarov
Alexander
lumenlight@mail.ru
0000-0002-3503-7458
St. Petersburg Electrotechnical University "LETI"
Maksimova
Alina A.
deer.blackgreen@yandex.ru
0000-0001-6869-1213
Alferov University
Vyacheslavova
Ekaterina
cate.viacheslavova@yandex.ru
Capacitance-voltage characterization of BP layers grown by PECVD mode
Boron phosphide is perspective material for solar cells based on BP/n-Si selective heterojunction. Here, BP layers grown by plasma-enhanced chemical vapor deposition at low temperature in continuous mode with flows of diborane and phosphine. It was shown rectifying behavior of current-voltage characteristics in Au/BP/n-Si structure with increasing of plasma power and additional dilution of gas mixture by hydrogen flow due to improvement of conductivity, and Au/BP/p-Si heterojunction showed photoelectric response. In result, BP layers are donor doped, and capacitance-voltage profiling at different temperature prove temperature activation of conductivity in BP.
10.18721/JPM.163.187
621.383.51
heterojunction
selective contact
boron phosphide
capacitance-voltage profiling
https://physmath.spbstu.ru/article/2023.68.87/