<?xml version="1.0" encoding="utf-8"?>
<journal>
  <titleid/>
  <issn>2304-9782, 2618-8686, 2405-7223</issn>
  <journalInfo lang="ENG">
    <title>St. Petersburg Polytechnic University Journal: Physics and Mathematics</title>
  </journalInfo>
  <issue>
    <volume>16</volume>
    <number>1.1</number>
    <altNumber> </altNumber>
    <dateUni>2023</dateUni>
    <pages>1-498</pages>
    <articles>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>9-15</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Herzen State Pedagogical University of Russia</orgName>
              <surname>Gerega </surname>
              <initials>Vasilisa </initials>
              <email>gerega.vasilisa96@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Herzen State Pedagogical University of Russia</orgName>
              <surname>Suslov</surname>
              <initials>Anton</initials>
              <email>a.v_suslov@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Herzen State Pedagogical University of Russia</orgName>
              <surname>Komarov</surname>
              <initials>Vladimir</initials>
              <email>va-komar@yandex.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Herzen State Pedagogical University of Russia</orgName>
              <surname>Grabov</surname>
              <initials>Vladimir</initials>
              <email>vmgrabov@yandex.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Herzen State Pedagogical University of Russia</orgName>
              <surname>Demidov</surname>
              <initials>Evgenii</initials>
              <email>demidov_evg@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Stepanov </surname>
              <initials>Roman</initials>
              <email>frid.rom.serg@gmail.com</email>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <orgName>Bunin Yelets State University</orgName>
              <surname>Rodionov</surname>
              <initials>Arkadi</initials>
              <email>arkadijfirst3@gmail.com</email>
              <address>Yelets, Russian Federation</address>
            </individInfo>
          </author>
          <author num="008">
            <individInfo lang="ENG">
              <orgName>Herzen State Pedagogical University of Russia</orgName>
              <surname>Kolobov</surname>
              <initials>Aleksandr</initials>
              <email>akolobov@herzen.spb.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Size effects in the galvanomagnetic and thermoelectric properties of ultrathin bismuth-antimony films</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The paper presents the results of a study of the electrical, galvanomagnetic, and thermoelectric properties of Bi and Bi1–xSbx (x = 0.03, 0.05, and 0.12) thin films (10–50 nm) on a mica substrate. All samples are characterized by an increase in conductivity with a decrease in film thickness, which can be associated with the presence of topologically protected surface states. It has been found that the band structure of the alloys significantly affects the appearance of the metallic type of conductivity in films with a ≤ 18 nm thickness. It was found that the resistivity of Bi0.97Sb0.03 films ≤ 17 nm thick is almost independent of temperature. Despite the increase in the conductivity of the samples, with a decrease in the thickness, the thermoelectric power factor decreases, which casts doubt on the fact that surface states have a positive effect on the thermoelectric figure of merit of thin Bi1–xSbx films. However, the detection of a positive thermoelectric power in Bi0.88Sb0.12 samples may be of interest in the development of the p branch of thermoelectric converters.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.101</doi>
          <udk>538.935</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>bismuth</keyword>
            <keyword>bismuth-antimony alloys</keyword>
            <keyword>galvanomagnetic properties</keyword>
            <keyword>thermoelectric properties</keyword>
            <keyword>thin films</keyword>
            <keyword>thermoelectric power factor</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.1/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>16-21</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Myasoedov </surname>
              <initials>Alexander </initials>
              <email>amyasoedov88@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>National Research Centre “Kurchatov Institute”, Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics” of Russian Academy of Sciences</orgName>
              <surname>Pavlov</surname>
              <initials>Ivan</initials>
              <email>win8765495@gmail.com</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute, Perfect Сrystals LLC</orgName>
              <surname>Pechnikov</surname>
              <initials>Aleksey</initials>
              <email>pechnikovai@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute, Perfect Сrystals LLC</orgName>
              <surname>Stepanov</surname>
              <initials>Sergey</initials>
              <email>s.i.stepanov@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute; Perfect Сrystals LLC</orgName>
              <surname>Nikolaev</surname>
              <initials>Vladimir</initials>
              <email>Nikolaev.V@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">TEM study of the defect structure of α-Ga2O3 layers grown by HVPE</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Prismatic stacking faults in α-Ga2O3 films on (0001) Al2O3 substrates are investigated using transmission electron microscopy (TEM). The studied films are grown by halide vapor phase epitaxy (HVPE) up to 1.3 µm in thickness. The initial growth stage results in threading dislocations (TDs) of an average density of 1010 cm–2. The majority of the TDs are identified as 1/3 &lt; 1\(\overline{1}\)00 &gt; partial edge and 1/3 &lt; 1\(\overline{1}\)01 &gt; perfect mixed types using g∙b = 0 invisibility criterion under two-beam diffraction conditions. The edge component of Burgers vector is determined by the Burgers circuit procedure using high-resolution TEM images of dislocation cores. It is suggested that 1/3 &lt; 1\(\overline{1}\)01 &gt; partial dislocations may arise as a result of dissociation of 1/3 &lt; 2\(\overline{1}\)\(\overline{1}\)0 &gt; erfect dislocations which leads to the emergence of prismatic stacking faults in the films.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.102</doi>
          <udk>538.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>gallium oxide</keyword>
            <keyword>TEM</keyword>
            <keyword>dislocations</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.2/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>22-27</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Melnichenko</surname>
              <initials>Ivan</initials>
              <email>imelnichenko@hse.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Nadtochiy </surname>
              <initials>Alexey </initials>
              <email>al.nadtochy@mail.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Ivanov</surname>
              <initials>Konstantin </initials>
              <email>kivanov@hse.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>National Research University ‘Higher School of Economics”</orgName>
              <surname>Makhov</surname>
              <initials>Ivan</initials>
              <email>imahov@hse.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Maximov</surname>
              <initials>Mikhail</initials>
              <email>maximov @beam.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Mintairov</surname>
              <initials>Sergei</initials>
              <email>mintairov@scell.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <surname>Kalyuzhniy</surname>
              <initials>Nikolai</initials>
              <email>nickk@mail.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="008">
            <individInfo lang="ENG">
              <surname>Kryzhanovskaya Natalia V.</surname>
              <initials>Natalia</initials>
              <email>nkryzhanovskaya@hse.ru</email>
            </individInfo>
          </author>
          <author num="009">
            <authorCodes>
              <scopusid>35379962200</scopusid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Ioffe Physical Technical Institute of the Russian Academy of Sciences</orgName>
              <surname>Zhukov</surname>
              <initials>Alexey</initials>
              <email>zhukov@beam.ioffe.ru</email>
              <address>Russia, 194021, St.Petersburg, Polytechnicheskaya 26</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">For the first time we show time-resolved photoluminescence dependencies with 0.2 ps resolution for the novel type of InGaAs/GaAs quantum-sized heterostructures, referred to as quantum well-dots (QWDs). Photoluminescence upconversion method, that allows achieving time resolution up to 0.2 ps, was used to obtain time-resolved spectra for light (lh) and heavy hole (hh) optical transitions of QWDs. We concluded that the capture of charge carriers to the lh and hh states of QWDs occurs simultaneously in the time range of ~ 10 ps and is probably limited by carrier diffusion in the matrix. The characteristic time of photoluminescence decay for the hh state (3 ns) was found to be greater than that of lh one (2 ns).</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.103</doi>
          <udk>538.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>time-resolved photoluminecsence</keyword>
            <keyword>InGaAs heterostructures</keyword>
            <keyword>quantum well-dots</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.3/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>28-32</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Pitirim Sorokin Syktyvkar State University</orgName>
              <surname>Korolev</surname>
              <initials>Roman</initials>
              <email>korolev36a@gmail.com</email>
              <address>Syktyvkar, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Pitirim Sorokin Syktyvkar State University</orgName>
              <surname>Antonets </surname>
              <initials>Igor</initials>
              <email>aiv@mail.ru</email>
              <address>Syktyvkar, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Institute of Geology of Komi SC, RAS</orgName>
              <surname>Golubev</surname>
              <initials>Evgeniy</initials>
              <email>yevgenygolubev74@mail.ru</email>
              <address>Syktyvkar, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Complex permittivity of graphene containing shungite within 0.05–15 MHz</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The paper presents the results of experimental studies of changes in the complex permittivity of natural graphene-containing shungites with different carbon content. A technique for determining the real and imaginary parts of the permittivity for conducting samples is presented. The dependences of the dielectric loss tangent and the real part of the permittivity on the carbon concentration for three resonant frequencies in the range of 0.05–15 MHz are studied.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.104</doi>
          <udk>538.956</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>shungite</keyword>
            <keyword>permittivity</keyword>
            <keyword>carbon concentration</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.4/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>33-37</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Ilinskiy</surname>
              <initials>Alexander</initials>
              <email>ilinskiy@mail.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Herzen State Pedagogical University of Russia</orgName>
              <surname>Castro Arata </surname>
              <initials>Rene </initials>
              <email>recastro@mail.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University </orgName>
              <surname>Pashkevich</surname>
              <initials>Marina</initials>
              <email>marpash@yandex.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Herzen State Pedagogical University of Russia</orgName>
              <surname>Popova </surname>
              <initials>Irina </initials>
              <email>timof-ira@yandex.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Sidorov</surname>
              <initials>Aleksandr</initials>
              <email>sidorov@oi.itmo.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Shadrin</surname>
              <initials>Evgeniy</initials>
              <email>shadr.solid@mail.ioffe.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Dielectric spectroscopy of Ag2S nanowires synthesized in porous silicate glasses</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">We have studied the frequency dielectric spectra of silver sulfide nanowires synthesized in porous silicate glasses. A possible mechanism of the thermal superionic phase transition in the samples is discussed. In this work, based on the analysis of the DS, the following conclusion was made. After the superionic phase transition occurs, the octa coordinated Ag+ ions become mobile, representing the elements of a “viscous liquid”, while the tetra-coordinated Ag+ ions, remaining immobile (up to phonon vibrations), stabilize the crystal lattice of the material.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.105</doi>
          <udk>537.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>superionic phase transition</keyword>
            <keyword>nanowires silver iodide</keyword>
            <keyword>nanoporous silicate glasses</keyword>
            <keyword>dielectric spectroscopy</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.5/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>38-41</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Blagoveshchensk State Pedagogical University</orgName>
              <surname>Milinskiy</surname>
              <initials>Alexey</initials>
              <email>a.milinskiy@mail.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Blagoveschensk State Pedagogical University </orgName>
              <surname>Baryshnikov</surname>
              <initials>Sergey</initials>
              <email>svbar2003@list.ru </email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0001-7216-3931</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Amur State University</orgName>
              <surname>Zeeva </surname>
              <initials>Anna</initials>
              <email>anutka_2010.1997@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Dielectric properties of ferroelectric composite (KNO3)(1–x)/(RbNO3)x</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The temperature dependences of the permittivity, the amplitude of the third harmonic and the differential thermal analysis signal for the (KNO3)(1–x)/(RbNO3)x composite were studied. To obtain (KNO3)(1–x)/(RbNO3)x samples, KNO3 and RbNO3 powders with particle size of 5–10 µm were used. The powders were mixed in appropriate proportions, after that the tablets were made at a pressure of 8·103 kg/cm2. The samples with x from 0.05 to 0.5 were examined (x is the volume fraction of RbNO3). Before measurements, the obtained samples were heated to 593 K, which is higher than the melting point of RbNO3, but lower than that of KNO3. It has been found that an increase in the RbNO3 content leads to the appearance of additional phase transitions and the expansion of the temperature region of the ferroelectric phase. The transition temperatures for potassium nitrate do not shift along the temperature axis. For rubidium nitrate, the phase transition at 437 K decreases by 4–5 K, and the temperature hysteresis of this transition increases. The expansion of the ferroelectric phase upon cooling is explained by the superposition of the ferroelectric phases of potassium nitrate and the RbxK(1–x) NO3 solid solution.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.106</doi>
          <udk>537.226</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>composite</keyword>
            <keyword>ferroelectric</keyword>
            <keyword>potassium nitrate</keyword>
            <keyword>rubidium nitrate</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.6/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>43-48</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-3469-5897</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Kondratev</surname>
              <initials>Valeriy</initials>
              <email>kvm_96@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0001-6869-1213</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Vyacheslavova</surname>
              <initials>Ekaterina</initials>
              <email>cate.viacheslavova@yandex.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Morozov </surname>
              <initials>Ivan </initials>
              <email>morivan@mail.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Nalimova </surname>
              <initials>Svetlana </initials>
              <email>sskarpova@list.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0001-6500-5492</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>St. Petersburg Electrotechnical University "LETI"</orgName>
              <surname>Moshnikov</surname>
              <initials>Vyacheslav</initials>
              <email>vamoshnikov@mail.ru</email>
            </individInfo>
          </author>
          <author num="006">
            <authorCodes>
              <orcid>0000-0002-7632-3194</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Gudovskikh</surname>
              <initials>Alexander</initials>
              <email>gudovskikh@spbau.ru</email>
            </individInfo>
          </author>
          <author num="007">
            <authorCodes>
              <orcid>0000-0001-7223-7232</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Moscow Institute of Physics and Technology (National Research University)</orgName>
              <surname>Bolshakov</surname>
              <initials>Alexey</initials>
              <email>acr1235@mail.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Study of quasi 1D silicon nanostructures adsorption properties via impedance spectroscopy</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The work is aimed at study of correlation between quasi 1D silicon nanostructures adsorption properties and their electrical characteristics in terms of change in Si nanowires impedance under action of different environments with a target adsorbate. Here we fabricate silicon nanowires based gas sensor and demonstrate the possibility of qualitative and quantitative gaseous media analysis for the presence of ammonia. The equivalent electric circuits of the sensor under action of air, water vapour and water ammonia solutions are considered. The sensor response under action of the different adsorbates and optimal impedance spectroscopy parameters are discussed.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.107</doi>
          <udk>538.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>silicon</keyword>
            <keyword>nanowires</keyword>
            <keyword>1D</keyword>
            <keyword>electrical impedance spectroscopy</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.7/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>49-53</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>St. Petersburg State University</orgName>
              <surname>Agekyan</surname>
              <initials>Vadim</initials>
              <email>v.agekyan@spbu.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>St. Petersburg State University</orgName>
              <surname>Filosofov </surname>
              <initials>Nikolai </initials>
              <email>n.filosofov@spbu.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Institute of Physics PAN</orgName>
              <surname>Karczewski</surname>
              <initials>Grzegorz</initials>
              <email>carcz@ifpan.edu.pl</email>
              <address>Warsaw, Poland</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Resnitsky</surname>
              <initials>Alexander</initials>
              <email>alexander.reznitsky@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>St. Petersburg State University</orgName>
              <surname>Serov</surname>
              <initials>Alexey</initials>
              <email>a.serov@spbu.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Smirnov</surname>
              <initials>Alexander</initials>
              <email>Alex.Smirnov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <orgName>St. Petersburg State University</orgName>
              <surname>Shtrom</surname>
              <initials>Igor</initials>
              <email>i.shtrom@spbu.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="008">
            <individInfo lang="ENG">
              <orgName>St. Petersburg State University</orgName>
              <surname>Verbin</surname>
              <initials>Sergey</initials>
              <email>s.verbin@spbu.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Photoluminescence and energy transfer between CdTe/CdMnTe quantum wells separated by thick barriers</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Reflection, luminescence (PL), and luminescence excitation (PLE) spectra of a CdTe/CdMnTe heterostructure with quantum wells of different thicknesses are studied. It has been found that at low temperatures light emission comes from localized exciton states of quantum wells. The PLE spectra show that the contributions of excitons and free carriers to the population of quantum well depend on its thickness. The ratio of these contributions affects the dependence of the quantum well luminescence intensity on the level of optical excitation. It has been established that the coupling of quantum wells, separated by thick barrier layers, occurs through exciton excited states.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.108</doi>
          <udk>538.935</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>exciton</keyword>
            <keyword>heterostructures</keyword>
            <keyword>coupling quantum wells</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.8/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>54-59</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Herzen State Pedagogical University of Russia</orgName>
              <surname>Castro Arata </surname>
              <initials>Rene </initials>
              <email>recastro@mail.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Herzen State Pedagogical University of Russia</orgName>
              <surname>Kononov</surname>
              <initials>Aleksey</initials>
              <email>kononov_aa@icloud.com</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Nikonorova</surname>
              <initials>Natalia</initials>
              <email>n-nikonorova2004@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Charge transfer in thin layers of polymer nanocomposites based on aromatic thermoplastic polyimide and cerium dioxide</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The results of the study of the electric charge transfer processes in R-OOD polyimide films and in nanocomposite based on it with cerium dioxide are presented. Using the existing model of charge barrier hopping (CBH), the values of the charge transfer parameters, such as the carrier concentration N, free path length Rω, and potential barrier height WM are calculated. The activation energy of conductivity processes is determined for all samples. The experimental results made it possible to draw following conclusions about the effect of the filler on the polymer matrix:the power-law nature of the frequency dependence of the specific conductivity σ'(ω) and the decrease in the exponent s with an increase in temperature in a wide range of frequencies and temperatures indicate the existence of a hopping mechanism of conductivity in the R OOD + CeO2 composite; charge transfer is a thermally activated process with an activation energy of E = 0.077 eV for R-OOD and E = 0.070 eV for R-OOD + CeO2; the introduction of 3% CeO2 filler into the R-OOD matrix leads to an increase in the specific conductivity in the low-frequency region and a change in the nature of the hopping mechanism of conduction.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.109</doi>
          <udk>538.935</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>electric charge transfer</keyword>
            <keyword>polyimide</keyword>
            <keyword>cerium dioxide</keyword>
            <keyword>charge barrier hopping</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.9/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>60-66</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Damaskinskaya </surname>
              <initials>Ekaterina </initials>
              <email>Kat.Dama@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Hilarov </surname>
              <initials>Vladimir</initials>
              <email>vladimir.hilarov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Nosov</surname>
              <initials>Yury</initials>
              <email>Yu.Nosov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>National Research Centre “Kurchatov Institute”</orgName>
              <surname>Podurets </surname>
              <initials>Konstantin </initials>
              <email>podurets_km@nrcki.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>National Research Centre “Kurchatov Institute”</orgName>
              <surname>Kaloyan</surname>
              <initials>Alexandr</initials>
              <email>alexander.kaloyan@gmail.com</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>Lomonosov Moscow State University</orgName>
              <surname>Korost</surname>
              <initials>Dmitry</initials>
              <email>dkorost@mail.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Damaskinskii </surname>
              <initials>Konstantin </initials>
              <email>damaskinsk@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Specific features of defect structure of a quartz single crystal at early stages of deformation</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The paper is concerned with studies of the fracture process in a synthetic quartz single crystal under uniaxial compression at early stages of deformation by three independent techniques, i.e., acoustic emission, X-ray computed  tomography and topography using a synchrotron radiation source. The most intense crack formation was observed in the region of higher internal deformations in the original crystal which were detected by topography. The energy of acoustic emission signals and the volume of the defects formed have been found to be linearly related. This result is of practical significance, since it allows estimation of sizes of fracture regions in situ merely by analyzing acoustic emission data in the cases, when other control techniques are inapplicable (for example, during the operation of industrial facilities).</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.110</doi>
          <udk>539.421</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>acoustic emission</keyword>
            <keyword>X-ray computed tomography</keyword>
            <keyword>synchrotron radiation topography (X-ray diffraction imaging)</keyword>
            <keyword>quartz single crystal</keyword>
            <keyword>defects volume</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.10/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>67-73</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>National Research Centre “Kurchatov Institute”</orgName>
              <surname>Guryev </surname>
              <initials>Valentin </initials>
              <email>GuryevVV@mail.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>National Research Centre “Kurchatov Institute”</orgName>
              <surname>Irodova</surname>
              <initials>Alla</initials>
              <email>Irodova_AV@nrcki.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>National Research Centre “Kurchatov Institute”</orgName>
              <surname>Chumakov</surname>
              <initials>Nikolay</initials>
              <email>Chumakov_NK@nrcki.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>National Research Centre “Kurchatov Institute”</orgName>
              <surname>Shavkin</surname>
              <initials>Sergey</initials>
              <email>Shavkin_SV@nrcki.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Low-field magnetization features of superconducting tapes with strong pinning anisotropy</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The electrodynamic behavior of II-type superconductors is determined by the physics of the vortex matter, for which the superconducting material is the medium of existence. It is noteworthy that for all practical superconductors this medium is both anisotropic and inhomogeneous. On the basis of data on the degree of inhomogeneity and anisotropy, some features of magnetization in low external field, comparable to self-field, can be explained. Namely: 1) an anomalous shift of the central magnetization peak, and 2) the fishtail shape in inclined magnetic fields. In this paper, we present an experimental study of the low-field magnetization of Nb-Ti tapes. The degree of anisotropy was varied by heat treatment of the original cold-rolled tape and by slicing the samples along and across the rolling direction. The obtained results are discussed in comparison with the features of the magnetization loops of other practical superconductors.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.111</doi>
          <udk>537.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>vortex matter</keyword>
            <keyword>magnetization</keyword>
            <keyword>fishtail</keyword>
            <keyword>pinning anisotropy</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.11/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>74-78</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Valeeva </surname>
              <initials>Alsu </initials>
              <email>ValeevaAR@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Pronin </surname>
              <initials>Igor</initials>
              <email>petrovich@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Kaptelov</surname>
              <initials>Eugeneiy</initials>
              <email>kaptelov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Senkevich</surname>
              <initials>Stanislav</initials>
              <email>SenkevichSV@mail.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Nemov</surname>
              <initials>Sergei</initials>
              <email>nemov_s@mail.ru</email>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>National Research Centre “Kurchatov Institute”</orgName>
              <surname>Staritsyn</surname>
              <initials>Mikhail</initials>
              <email>ms_145@mail.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Microstructure and ferroelectric properties of submicron polycrystalline lead zirconate titanate films with a gradient composition distribution over the thickness</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The paper presents the results of two-layer thin ferroelectric PZT films studies with a change in the lead content over the thickness of the films, obtained by RF magnetron deposition at various pressures of the working gas mixture. The microstructure and elemental composition were investigated by scanning electron microscopy and electron probe X-ray spectral microanalysis. It is shown that the elemental composition and dielectric properties depend on the sequence of layers deposition. The results obtained make it possible to characterize the physical mechanism of self-polarization formation in thin PZT films.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.112</doi>
          <udk>537.266.4</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>thin ferroelectric films</keyword>
            <keyword>lead zirconate titanate</keyword>
            <keyword>RF magnetron sputtering</keyword>
            <keyword>non uniform distribution of lead over the thickness</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.12/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>79-83</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Mynbaeva </surname>
              <initials>Marina </initials>
              <email>mgm@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Lebedev</surname>
              <initials>Sergey</initials>
              <email>lebedev.sergey@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Self-organization of the structure of porous silicon carbide under external influences</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This paper presents the results of a study of the effect of external influences on the structure and phase composition of porous SiC layers obtained by anodization. It is shown how carrying out of standard technological operations makes it possible to control the properties of porous structures and significantly expands the variety of their morphological forms. The conditions facilitating the occurrence of phase-structural and polytype transformations in porous SiC structures are determined.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.113</doi>
          <udk>538.911</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>silicon carbide</keyword>
            <keyword>porous structure</keyword>
            <keyword>external influences</keyword>
            <keyword>self-organization</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.13/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>84-89</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Gureva </surname>
              <initials>Svetlana </initials>
              <email>swet.gurjewa@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Marikhin</surname>
              <initials>Vyacheslav</initials>
              <email>v.marikhin@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Institute of Macromolecular Compounds RAS</orgName>
              <surname>Vlasova</surname>
              <initials>Elena</initials>
              <email>spectra@imc.macro.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Conformational disorder and its effect on structural phase transitions in tricosane С23Н48</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The kinetics of the first-order solid-solid structural phase transition in monodisperse n-alkane samples of odd tricosane C23H48 was studied by FTIR spectroscopy. The detailed study of the structure rearrangements of long-chain molecular crystals of n-alkanes during solid-state transitions has been carried out and the existence of many irregular conformers in solid phases of tricosane, the concentration of which reaches a maximum when approaching the  melting point, has been demonstrated. The presence of these conformational defects has been found to promote the development of a new phase in the bulk of the initial one and to facilitate the transitions between different  intermediate rotator phases in the solid state. Thus, the significant role has been demonstrated for the appearance of various intramolecular conformational defects during heating of n-alkanes, which promote interfacial transitions from the solid to the liquid state, weakening the intermolecular interaction and increasing the freedom degree of molecules.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.114</doi>
          <udk>538.913</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>n-alkane</keyword>
            <keyword>phase transition</keyword>
            <keyword>IR spectroscopy</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.14/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>90-96</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Borisov </surname>
              <initials>Artem </initials>
              <email>borisov.ak@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Egorov</surname>
              <initials>Victor</initials>
              <email>victor_egorov1@inbox.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Marikhin</surname>
              <initials>Vyacheslav</initials>
              <email>v.marikhin@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Myasnikova</surname>
              <initials>Lubov</initials>
              <email>liu2000@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Dimensional effect of nanocrystalline elements of the polyethylene structure</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The method for calculating the size distribution of nanocrystalline elements in lamellar and fibrillar polymer morphologies was proposed. The distribution of the longitudinal size of these elements in lamellas and microfibrils of ultrahigh molecular weight polyethylene was calculated using differential scanning calorimetry data. The calculation results are consistent with the data obtained by the X-ray method.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.115</doi>
          <udk>538.911</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>ultrahigh molecular weight polyethylene</keyword>
            <keyword>lamella</keyword>
            <keyword>fibril</keyword>
            <keyword>differential scanning calorimetry</keyword>
            <keyword>phase transition</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.15/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>97-101</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Institute of Geology of Komi SC, RAS</orgName>
              <surname>Golubev</surname>
              <initials>Evgeniy</initials>
              <email>yevgenygolubev74@mail.ru</email>
              <address>Syktyvkar, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Pitirim Sorokin Syktyvkar State University</orgName>
              <surname>Antonets </surname>
              <initials>Igor</initials>
              <email>aiv@mail.ru</email>
              <address>Syktyvkar, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Pitirim Sorokin Syktyvkar State University</orgName>
              <surname>Korolev</surname>
              <initials>Roman</initials>
              <email>korolev36a@gmail.com</email>
              <address>Syktyvkar, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Frequency and concentration dependences of the electrical properties of natural disordered carbon in the high-frequency region</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Disordered sp2 carbon of geological origin (shungite rocks of Karelia) with a set of various nanostructures (fullerene-like, graphene, ribbons) has promising technological properties. In this work, we studied the effect of nanosized carbon structures on the electrical properties. The impedance, active and reactance resistance, inductance of carbon-containing materials were measured in the frequency range from 50 kHz to 15 MHz. The inductive nature of the conductivity of shungite carbon was found. With increasing frequency, the resistance of shungite carbon increases. This nature of conductivity can be associated with the predominant effect on the electrical properties in shungites of nanosized ribbon structures.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.116</doi>
          <udk>549.08; 538.975</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>disordered sp2 carbon</keyword>
            <keyword>nanostructure</keyword>
            <keyword>electrophysical characteristics</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.16/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>102-108</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Kuban State University</orgName>
              <surname>Shmargilov</surname>
              <initials>Sergey</initials>
              <email>122ftf@mail.ru</email>
              <address>Krasnodar, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Kuban State University</orgName>
              <surname>Galutskiy </surname>
              <initials>Valeriy </initials>
              <email>galutskiy17v@mail.ru</email>
              <address>Krasnodar, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Kuban State University</orgName>
              <surname>Puzanovskiy</surname>
              <initials>Kirill</initials>
              <email>puzanovsky.kv@yandex.ru</email>
              <address>Krasnodar, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Kuban State University</orgName>
              <surname>Stroganova</surname>
              <initials>Elena</initials>
              <email>stroganova@kubsu.ru</email>
              <address>Krasnodar, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Influence of the refractive index gradient on the transmission coefficient in the 1.5-micron range in an electro-optical converter based on lithium niobate</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The paper presents the results of a study of the effect of the composition gradient and refractive index on the attenuation of an optical signal at a wavelength of 1.55 microns. The attenuation measurements were carried out by the breakage method and the comparison method, the attenuation by both methods was 0.9 dB/cm when waveguides were formed along the change in the lithium composition in the crystal plate of the composition Li0.94...0.98Nb1.06...1.02O3.12...3.04.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.117</doi>
          <udk>538.9, 535.3</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>optical waveguide</keyword>
            <keyword>optical losses</keyword>
            <keyword>lithium niobate</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.17/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>109-112</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Dunaevskiy </surname>
              <initials>Mikhail </initials>
              <email>Mike.Dunaeffsky@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Study of mechanical resonance frequencies in tapered nanowires</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this paper, the transcendental equation was obtained in the framework of the Euler–Bernoulli beam theory, which allows obtaining the values of resonant frequencies for any tapered nanowire. Calculations of the frequencies of the first few resonances of mechanical oscillations for nanowires with various conicity (the average radius and length of the nanowire remained constant) were performed. It was established that the frequencies of the first three modes increase with an increase in the conicity angle, while the frequency of the fourth mode (n = 4) is nearly constant and independent of the conicity angle. It was also established that the frequencies of the higher order (n &gt; 4) modes decrease with an increase in the conicity angle. The ratios of the resonance values of the first few modes can be used to clarify the conicity value, which is necessary when determining the Young's modulus of tapered nanowires.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.118</doi>
          <udk>534.13; 539.3; 538.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>nanowires</keyword>
            <keyword>tapered nanowires</keyword>
            <keyword>mechanical resonances frequencies</keyword>
            <keyword>Young's modulus</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.18/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>113-118</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Institute for Problems of Mechanical Engineering RAS</orgName>
              <surname>Eremeev </surname>
              <initials>Iurii </initials>
              <email>iuriyeremeev528@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Institute for Problems of Mechanical Engineering RAS</orgName>
              <surname>Vorobev</surname>
              <initials>Maxim</initials>
              <email>vmaximg@bk.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Institute for Problems of Mechanical Engineering RAS</orgName>
              <surname>Grashchenko</surname>
              <initials>Alexander</initials>
              <email>asgrashchenko@bk.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Pirogov</surname>
              <initials>Evgeny</initials>
              <email>zzzavr@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Andreeva </surname>
              <initials>Valentina </initials>
              <email>avd2007@bk.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>Institute for Problems of Mechanical Engineering RAS</orgName>
              <surname>Osipov</surname>
              <initials>Andrey</initials>
              <email>andrey.v.osipov@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <orgName>Institute for Problems of Mechanical Engineering RAS</orgName>
              <surname>Kukushkin </surname>
              <initials>Sergey</initials>
              <email>sergey.a.kukushkin@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Evolution of the crystal microstructure of hybrid SiC/Si substrates grown by the method of atomic substitution</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">3C-SiC/Si (111) hybrid structures are grown by the method of coordinated atomic substitution on the boron- and phosphorus-doped Si(111) substrates. The evolution of the microstructure is analyzed in the time range of 1–40 minutes. The results show the reconstruction of the 3C-SiC (111) film at 3–5 minutes of the growth. The difference between strain in the SiC film obtained on p-Si and n-Si is shown using XRD and Raman techniques.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.119</doi>
          <udk>546.281</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>silicon carbide</keyword>
            <keyword>elastic strain</keyword>
            <keyword>coordinated atomic substitution</keyword>
            <keyword>microstructure</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.19/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>119-125</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Lukhmyrina </surname>
              <initials>Tatiana </initials>
              <email>h7k9g00@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Klimov</surname>
              <initials>Aleksandr</initials>
              <email>a.klimov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Kunkov</surname>
              <initials>Roman</initials>
              <email>romunkov@yandex.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Lebedeva</surname>
              <initials>Natalia</initials>
              <email>natali_lebedeva@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Matveev</surname>
              <initials>Boris</initials>
              <email>bmat@iropt3.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>Submicron Heterostructures for Microelectronics Research and Engineering Center of the RAS</orgName>
              <surname>Chernyakov</surname>
              <initials>Anton</initials>
              <email>chernyakov.anton@yandex.ru</email>
              <address>Russia, 194021, St.Petersburg, Polytechnicheskaya, 26</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Temperature distribution in InAsSbP/InAsSb/InAs double heterostructure on-chip sensors</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The paper presents temperature distribution analysis in activated on-chip chemical sensor based on p-InAsSbP/n-InAsSb/n-InAs 1×3 diode array. Temperature distributions were obtained both experimentally with the use of infrared microscopy, by I-V characteristic analysis and by finite element modelling. The simulated temperature values are in reasonable agreement with experimental data, allowing one to establish a relationship between the temperature of active elements of the sensor. The relationship is important for the improvement of chemical analysis accuracy.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.120</doi>
          <udk>538.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Temperature distribution</keyword>
            <keyword>1×3 diode array</keyword>
            <keyword>on-chip chemical sensor</keyword>
            <keyword>mid-IR photodiodes</keyword>
            <keyword>mid-IR LEDs</keyword>
            <keyword>modelling</keyword>
            <keyword>IR microscopy</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.20/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>126-130</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Puchkov</surname>
              <initials>Nikolai </initials>
              <email>muxanin@mail.ru </email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Vladimir </surname>
              <initials>Vladimir </initials>
              <email>solovyev_v55@mail.ru </email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Cvetkov</surname>
              <initials>Alexander </initials>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Yanikov </surname>
              <initials>Mikhail </initials>
              <email>losthighway@mail.ru </email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Propagation of surface plasmon-polaritons in metal-dielectric structures based on opals</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Calculations based on the analysis of experimental data allow us to estimate a period of a two-dimensional diffraction grating made of opal globules and to make assumptions about possible directions of surface plasmon-polaritons propagation in metal-dielectric hybrid plasmon-photonic crystals.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.121</doi>
          <udk>539.216:535.346</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>surface plasmon-polaritons</keyword>
            <keyword>opal globules</keyword>
            <keyword>metal-dielectric structure</keyword>
            <keyword>hybrid plasmon-photonic crystal</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.21/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>131-136</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Babkina </surname>
              <initials>Anastasiia </initials>
              <email>babkina.anastasya@bk.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Zyryanova</surname>
              <initials>Ksenia</initials>
              <email>ms.z.k.s@mail.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Kulpina</surname>
              <initials>Ekaterina</initials>
              <email>katrinakulpina@yandex.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0003-0757-9927</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Gavrilov</surname>
              <initials>Ruslan</initials>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Alkali ion effect on phase transition temperatures of CuCl nanocrystals in potassium-alumina-borate glass</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The effect of the Na/K ratio on the phase transition temperatures of CuCl nanocrystals in potassium-alumina-borate glass is studied. The size effect in the location of the exciton absorption is confirmed. By increasing the content of sodium ions in glass, it is possible to increase the melting point of CuCl crystals with a mean size of 3.1 nm from 152 to 168 °C. It is assumed that in the matrix of potassium alumina-borate glass, instead of pure CuCl crystals, a CuCl-RCl (R = Na, K) solid solution crystallizes during the heat treatment.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.122</doi>
          <udk>535.341</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>copper halides</keyword>
            <keyword>melting temperature</keyword>
            <keyword>crystallization temperature</keyword>
            <keyword>solid solution</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.22/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>137-141</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Vasilyev </surname>
              <initials>Yuri </initials>
              <email>yu.vasilyev@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Two-dimensional plasmon excitations in a random array of quantum antidots</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Terahertz absorption in two-dimensional electron systems in an AlGaAs/GaAs heterojunction containing a layer of self-organizing antidots is experimentally studied. A magnetoplasmon mode is observed in a magnetic field. When the electron density at the heterojunction is less than the density of the disorder potential minima induced by the antidots we found the drastic narrowing of the absorption line with magnetic field. We interpret this effect by magnetic field induced localization. The localized plasmon resonances are coupled by the Coulomb electron-electron interactions leading to collective magnetoplasmon excitations.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.123</doi>
          <udk>621.315.592</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>heterojunction</keyword>
            <keyword>magnetoplasmon</keyword>
            <keyword>antidots</keyword>
            <keyword>terahertz absorption</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.23/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>142-145</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Chikurov </surname>
              <initials>Daniil </initials>
              <email>d.chikurov@yandex.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Volkov</surname>
              <initials>Mihail P.</initials>
              <email>m.volkov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Study of the anisotropy of critical currents in 2G-HTSC tapes by a non-contact method</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">A simple and reliable method for determining the critical current of a HTSC tape is a non-contact method based on capturing the magnetic flux by a closed superconducting ring made of this tape and measuring the magnetic field in the center of the ring with a field sensor. This method also makes it possible to obtain the dependence of the critical current on the magnetic field by applying a magnetic field locally on a small section of the tape. A local magnetic field can be created using strong permanent magnets, which also makes it possible to apply the field at different angles relative to the plane of the tape and to determine the anisotropy of critical currents. Using this method, experiments were carried out on rings made of a SuperOx HTSC tape at T = 77 K and in a magnetic field up to 4 kOe. The values obtained for the anisotropy of critical currents are in good agreement with the data given by the manufacturer.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.124</doi>
          <udk>538.945.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>superconductivity</keyword>
            <keyword>HTSC</keyword>
            <keyword>critical current</keyword>
            <keyword>anisotropy</keyword>
            <keyword>magnetic flux capture</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.24/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>146-152</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Argunova </surname>
              <initials>Tatiana </initials>
              <email>argunova@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>National Research Centre “Kurchatov Institute”</orgName>
              <surname>Kohn</surname>
              <initials>Victor</initials>
              <email>kohnvict@yandex.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Krymov</surname>
              <initials>Vladimir</initials>
              <email>v.krymov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Study of defects in shaped sapphire crystals by synchrotron X-ray phase contrast imaging</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Single crystalline sapphire ribbons grown by the Stepanov method exhibit relatively high dislocation densities and often contain slightly misoriented grains. In order to understand the formation of dislocation structures during growth, we studied neck portions cut off perpendicular to the growth axis [ ​\(\overline{1}\)​ 010] of basal-plane-faceted ribbons. The samples have been characterized using phase-contrast and Bragg-diffraction imaging (topography) with synchrotron radiation. It has been found that in the growth direction from the neck towards the main body of the ribbon the dislocation density increases due to multiplication of dislocations. Combining the both imaging techniques, the dislocations were shown to be located around gas voids in sapphire crystals. Computer simulations of the phase-contrast images were carried out to obtain the correct size of the voids.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.125</doi>
          <udk>548.73</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>synchrotron phase contrast imaging</keyword>
            <keyword>computer simulations</keyword>
            <keyword>shaped sapphire</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.25/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>153-157</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Reznik</surname>
              <initials>Rodion </initials>
              <email>moment92@mail.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Gridchin </surname>
              <initials>Vladislav</initials>
              <email>gridchinvo@gmail.com</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Kotlyar</surname>
              <initials>Konstantin</initials>
              <email>konstantin21kt@gmail.com</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Dragunova </surname>
              <initials>Anna </initials>
              <email>anndra@list.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Kryzhanovskaya Natalia V.</surname>
              <initials>Natalia</initials>
              <email>nkryzhanovskaya@hse.ru</email>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>Alferov University; IAI RAS</orgName>
              <surname>Samsonenko</surname>
              <initials>Yurii</initials>
              <email>samsonenko@beam.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Soshnikov</surname>
              <initials>Ilya</initials>
              <email>ipsosh@beam.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="008">
            <individInfo lang="ENG">
              <orgName>St. Petersburg State University</orgName>
              <surname>Khrebtov</surname>
              <initials>Artem</initials>
              <email>khrebtovart@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="009">
            <individInfo lang="ENG">
              <surname>Cirlin</surname>
              <initials>George </initials>
              <email>george.cirlin@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">AlGaAs nanowires with InAs quantum dots on the silicon surface were synthesized by molecular-beam epitaxy. Morphological and optical properties of grown nanostructures were studied. It is important to note, that emission from  quantum dots is observed in the wavelength range from 780 to 970 nm. Assumptions about the nature of short-wave radiation from quantum dots were formulated. In particular, one of the reasons may be the significant desorption of indium atoms and the presence of gallium atoms in the catalyst droplets during growth at the substrate temperature of 510 °C. Our work, therefore, opens new prospects for integration of direct bandgap semiconductors with silicon  platform.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.126</doi>
          <udk>538.975</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>III-V semiconductors</keyword>
            <keyword>nanowires</keyword>
            <keyword>quantum dots</keyword>
            <keyword>molecular-beam epitaxy</keyword>
            <keyword>silicon</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.26/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>158-161</pages>
        <authors>
          <author num="001">
            <authorCodes>
              <orcid>0000-0002-3640-677X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Kaveev</surname>
              <initials>Andrey</initials>
              <email>kaveev@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Formation of a dielectric sublayer heterostructure of lead-tin telluride</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">We have optimized the growth parameters of the buffer layer for further Pb1-xSnxTe (x ≥ 0.4) deposition from the point of view of smoothness and crystalline quality. The latter has the properties of a crystalline topological insulator. A  three-component heterostructure consisting of fluorite CaF2, BaF2, and cubic Pb0.7Sn0.3Te:In layers was formed on the Si(111). The surface morphology of this hybrid heterostructure was studied depending on the growth  temperature and the thickness.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.127</doi>
          <udk>538.911</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>molecular beam epitaxy</keyword>
            <keyword>Pb0.7Sn0.3Te</keyword>
            <keyword>topological insulators</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.27/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>162-166</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Lobachevsky State University of Nizhni Novgorod</orgName>
              <surname>Korolev </surname>
              <initials>Dmitry </initials>
              <email>dmkorolev@phys.unn.ru</email>
              <address>Nizhni Novgorod, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Institute of Solid State Physics RAS</orgName>
              <surname>Tereshchenko</surname>
              <initials>Alexey</initials>
              <email>tan@issp.ac.ru</email>
              <address>Chernogolovka, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Lobachevsky State University of Nizhni Novgorod</orgName>
              <surname>Nikolskaya</surname>
              <initials>Alena</initials>
              <email>nikolskaya@nifti.unn.ru</email>
              <address>Nizhni Novgorod, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Lobachevsky State University of Nizhni Novgorod</orgName>
              <surname>Mikhaylov</surname>
              <initials>Alexei</initials>
              <email>mian@nifti.unn.ru</email>
              <address>Nizhni Novgorod, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Lobachevsky State University of Nizhni Novgorod</orgName>
              <surname>Belov</surname>
              <initials>Alexey</initials>
              <email>belov@nifti.unn.ru</email>
              <address>Nizhni Novgorod, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>Lobachevsky State University of Nizhni Novgorod</orgName>
              <surname>Tetelbaum</surname>
              <initials>David</initials>
              <email>tetelbaum@phys.unn.ru</email>
              <address>Nizhni Novgorod, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Дислокационная фотолюминесценция в самоимплантированном кремнии с различными ориентациями поверхности</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The regularities of the influence of initial substrate orientation and annealing conditions on the intensity and temperature dependence of the D1 luminescence line for the p-type silicon samples implanted with silicon ions followed by subsequent annealing are studied. It is shown that the luminescent properties of the samples depend both on surface orientation and on annealing temperature. For a silicon sample with (111) surface orientation, under certain heat  treatment conditions, an anomalous temperature dependence of the D1 line intensity is demonstrated with the appearance of a second maximum in this dependence at temperatures of about 80 K.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.128</doi>
          <udk>537.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>кремний</keyword>
            <keyword>ионная имплантация</keyword>
            <keyword>отжиг</keyword>
            <keyword>фотолюминесценция</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.28/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>167-171</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Ivanov</surname>
              <initials>Anton</initials>
              <email>a-e-ivano-v@yandex.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Submicron Heterostructures for Microelectronics Research and Engineering Center of the RAS</orgName>
              <surname>Chernyakov</surname>
              <initials>Anton</initials>
              <email>chernyakov.anton@yandex.ru</email>
              <address>Russia, 194021, St.Petersburg, Polytechnicheskaya, 26</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Submicron Heterostructures for Microelectronics Research and Engineering Center of the RAS</orgName>
              <surname>Zakgeim</surname>
              <initials>Alexander</initials>
              <email>zakgeim@mail.ioffe.ru</email>
              <address>Russia, 194021, St.Petersburg, Polytechnicheskaya, 26</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Comprehensive study of the power capabilities of UV-C LEDs in pulsed and continuous modes</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Data is reported on study of light-current characteristics and thermal properties of flip-chip AlGaN UV-C LED over a wide range of excitation levels: up to 2 kA/cm2 in pulse mode. The tailor-made microscope based on InAs matrix with  photosensitivity in 2.5–3.1 µm range was employed for getting IR-intensity maps and revealing of temperature distribution across the emitting chips. The work is aimed at detailed study the factors limiting the energy capabilities  of UV-C LEDs.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.129</doi>
          <udk>621.382.2</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>power UV-C LED</keyword>
            <keyword>thermal resistance</keyword>
            <keyword>temperature mapping</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.29/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>172-177</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Ionov</surname>
              <initials>Alexander</initials>
              <email>ionov@tuch.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Volkov</surname>
              <initials>Mihail P.</initials>
              <email>m.volkov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Institute of Macromolecular Compounds RAS</orgName>
              <surname>Nikolaeva</surname>
              <initials>Marianna</initials>
              <email>marianna_n@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Institute of Macromolecular Compounds RAS</orgName>
              <surname>Smyslov</surname>
              <initials>Ruslan</initials>
              <email>urs@macro.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Institute of Macromolecular Compounds RAS</orgName>
              <surname>Bugrov </surname>
              <initials>Alexander </initials>
              <email>anbugrov@etu.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Magnetization of different types of reduced graphene oxide in composites based on polystyrene</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The transition from 'the initial graphite material, consisting of multilayer graphene of macroscopic size, to its oxidized form occurring as films, followed by their thermal reduction in an atmosphere of hydrogen, allows for obtaining  submicron galleries of reduced graphene oxide with oxygen-containing groups on the surface. Such hydroxyl and carboxyl groups were used to functionalize the surface of graphene nanosheets with methacrylate groups to twist graphene layers relative to each other during in-situ copolymerization with styrene. In such a composite, mechanical stresses and defects are potential in the graphene nanosheets, which may be the reason for local  superconductivity at room temperature. A similar effect was also recorded for photoreduced graphene oxide with a perforated surface as a component of a polystyrene-based composite.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.130</doi>
          <udk>538.945</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>UV irradiation</keyword>
            <keyword>reduced graphene oxide</keyword>
            <keyword>polymeric matrix</keyword>
            <keyword>percolation</keyword>
            <keyword>carbon electronics</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.30/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>178-184</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Conyuh </surname>
              <initials>Dmitry </initials>
              <email>conyuh.dmitrij@yandex.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Beltukov</surname>
              <initials>Yaroslav</initials>
              <email>ybeltukov@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Quasi-local vibrations of amorphous solids in correlated random matrix theory</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">We apply the random matrix theory to the study of quasi-localized modes in amorphous solids having correlated disorder due to the stability criterion. We demonstrate that the number and properties of quasi-local vibrations depend  significantly on how much the statistics of the dynamical matrix elements differs from the Gaussian one. The quasi-localized regime of the vibrational density of states can be understood in the framework of a perturbation theory,  which managed to identify the low-frequency asymptotic.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.131</doi>
          <udk>539.21</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>amorphous solids</keyword>
            <keyword>quasi-localized modes</keyword>
            <keyword>random matrices</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.31/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>185-190</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Saratov State Univercity</orgName>
              <surname>Martyshkin</surname>
              <initials>Alexandr</initials>
              <email>aamartyshkin@gmail.com</email>
              <address>Saratov, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Saratov State Univercity</orgName>
              <surname>Gubanova</surname>
              <initials>Yulya</initials>
              <email>yulya29022095@gmail.com</email>
              <address>Saratov, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Saratov State Univercity</orgName>
              <surname>Beginin</surname>
              <initials>Eugeny</initials>
              <email>egbegin@gmail.com</email>
              <address>Saratov, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Saratov State Univercity</orgName>
              <surname>Sadovnikov</surname>
              <initials>Alexandr</initials>
              <email>sadovnikovav@gmail.com</email>
              <address>Saratov, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Interconnect elements of magnonic networks based on controlled meander 3D magnonic structures</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Here we propose the different simple building block of the three-dimensional (3D) magnonic network in the form of the joined orthogonal sections of magnonic waveguides. It was shown, that the proposed 3D structures allows the  transmission of spin-wave signals in the regime of surface magnetostatic wave propagation without the significant losses due to the junction region. Micromagnetic simulation was used to reveal the mechanism of spin-wave propagation across 3D junction. An electrodynamic problem is considered by the finite element method and the dispersion characteristics of spin waves (SW) are constructed with a change in the geometric parameters of the  meander. The nature of the change in the frequency ranges of the Bragg band gaps depending on the meander profile has been studied in detail. It was demonstrated that spin-wave waveguiding 3D structure with broken  translational symmetry exploiting the vertical spin-wave transport provides the transmission of the information signal in three-dimensional configuration of magnonic networks.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.132</doi>
          <udk>537.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Spin wave</keyword>
            <keyword>micromagnetic calculation</keyword>
            <keyword>3D structure</keyword>
            <keyword>Brillouin-spectroscopy</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.32/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>191-196</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Shukshin Altai State University for Humanities and Pedagogy</orgName>
              <surname>Cherednichenko </surname>
              <initials>Anton </initials>
              <email>anton.chered@mail.ru</email>
              <address>Biysk, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Zakharov</surname>
              <initials>Pavel</initials>
              <email>zakharovpvl@rambler.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Shukshin Altai State University for Humanities and Pedagogy</orgName>
              <surname>Eremin</surname>
              <initials>Alexander</initials>
              <email>eam77@yandex.ru</email>
              <address>Biysk, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Polzunov Altai State Technical University</orgName>
              <surname>Starostenkov</surname>
              <initials>Mikhail</initials>
              <email>genphys@mail.ru</email>
              <address>Barnaul, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Ufa State Aviation Technical University</orgName>
              <surname>Korznikova</surname>
              <initials>Elena</initials>
              <email>elena.a.korznikova@gmail.com</email>
              <address>Ufa, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>Institute of Molecule and Crystal Physics, Ufa Federal Research Center of RAS</orgName>
              <surname>Dmitriev</surname>
              <initials>Sergey</initials>
              <email>dmitriev.sergey.v@gmail.com</email>
              <address>Ufa, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Effect of surface curvature of an FCC crystal on the characteristics of localized vibrations of atoms</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Localized states of discrete structures play an important role in energy transfer and reduction of potential barriers for local structure transformation. In this paper, we consider the influence of the surface curvature of the crystal with  cylindrical symmetry on the possibility of excitation of surface localized modes. The study is performed by means of molecular dynamics method. A face-centered cubic crystal of composition A3B with an L12 superstructure, where component A is Pt, B is Al is considered. The interaction of particles was described by the interatomic potential obtained by the embedded atom method. We demonstrate the fundamental possibility of the existence of localized modes  on the surface under consideration. External oscillations, in turn, can imitate the boundary conditions corresponding to the dynamics of the crystal volume, thereby leading to the consideration of modes located far from the  surface. The energy and dynamic characteristics of localized excitations are calculated as functions of the curvature and location of the atom on the crystal surface.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.133</doi>
          <udk>538.913</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>localized states</keyword>
            <keyword>surface</keyword>
            <keyword>molecular dynamics</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.33/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>197-204</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Bauman Moscow State Technical University</orgName>
              <surname>Simkin </surname>
              <initials>Ivan </initials>
              <email>vanyasimkin@gmail.com</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Bauman Moscow State Technical University</orgName>
              <surname>Yakovlev</surname>
              <initials>Egor</initials>
              <email>yakov.egor@gmail.com</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Bauman Moscow State Technical University</orgName>
              <surname>Kryuchkov</surname>
              <initials>Nikita</initials>
              <email>kruchkov_nkt@mail.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Bauman Moscow State Technical University</orgName>
              <surname>Korsakova</surname>
              <initials>Sofia</initials>
              <email>sofia.korsakova@gmail.com</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Bauman Moscow State Technical University</orgName>
              <surname>Yurchenko</surname>
              <initials>Stanislav</initials>
              <email>st.yurchenko@mail.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Calculation of correlation lengths in 2D Lennard-Jones fluids</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The process of spinodal decomposition in two-dimensional system that was obtained by molecular dynamics simulation has been analysed using the correlation of reciprocal areas of the Voronoi cells. Correlation lengths dependence  n the temperature and the critical exponent of the LJ12-6 system in the fluctuation region by the general renormalization group (RG) framework were calculated. We showed the agreement of the calculated critical  exponent ν with both experiments and theory. The proposed methodology for correlations of the reciprocal areas of the Voronoi cells is well applicable in the experiments with 2D colloidal systems.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.134</doi>
          <udk>538.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>soft matter</keyword>
            <keyword>colloidal particles</keyword>
            <keyword>tuned self-assembly</keyword>
            <keyword>phase transitions</keyword>
            <keyword>molecular dynamics</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.34/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>205-210</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Bauman Moscow State Technical University</orgName>
              <surname>Libet </surname>
              <initials>Pavel </initials>
              <email>libetpa@gmail.com</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Bauman Moscow State Technical University</orgName>
              <surname>Shirokova </surname>
              <initials>Anastasia </initials>
              <email>shirokova2001@yandex.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Bauman Moscow State Technical University</orgName>
              <surname>Simkin </surname>
              <initials>Ivan </initials>
              <email>vanyasimkin@gmail.com</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Bauman Moscow State Technical University</orgName>
              <surname>Yakovlev</surname>
              <initials>Egor</initials>
              <email>yakov.egor@gmail.com</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Bauman Moscow State Technical University</orgName>
              <surname>Yurchenko</surname>
              <initials>Stanislav</initials>
              <email>st.yurchenko@mail.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Application of conical magnetic rotating fields for controlled colloidal self-assembly</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Tunable interactions under the influence of external electric and magnetic fields open the way to controlled transport and self-organization in model and living systems. In this paper, we establish new experimental system parameters  for tuning interparticle interactions in colloidal systems using a three-dimensional precessing conical magnetic field. The paper presents a digital twin of the experimental setup, simulation of electromagnetic fields in order to find the  optimal self-assembly parameters. The results of pilot experiments with magnetic particles of silicon dioxide 2.47 µm in size in deionized water are demonstrated, the phenomenon of controlled self-assembly is shown.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.135</doi>
          <udk>538.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>soft matter</keyword>
            <keyword>self-assembly</keyword>
            <keyword>magnetic fields</keyword>
            <keyword>colloids</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.35/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>211-217</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Derzhavin Tambov State University</orgName>
              <surname>Fedorov </surname>
              <initials>Victor </initials>
              <email>fedorov-tsu.tmb@inbox.ru</email>
              <address>Tambov, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Derzhavin Tambov State University</orgName>
              <surname>Balybin</surname>
              <initials>Dmitry</initials>
              <email>balybindv@gmail.com</email>
              <address>Tambov, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Derzhavin Tambov State University</orgName>
              <surname>Pluzhnikova</surname>
              <initials>Tatiana </initials>
              <email>plushnik@mail.ru</email>
              <address>Tambov, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Derzhavin Tambov State University</orgName>
              <surname>Boitsova</surname>
              <initials>Margarita</initials>
              <email>mvboitsova@mail.ru</email>
              <address>Tambov, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Derzhavin Tambov State University</orgName>
              <surname>Fedotov</surname>
              <initials>Dmitry</initials>
              <email>dmitry_989@mail.ru</email>
              <address>Tambov, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <authorCodes>
              <orcid>0000-0001-5957-4525</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Derzhavin Tambov State University</orgName>
              <surname>Berezner</surname>
              <initials>Arseniy</initials>
              <address>Tambov, Russian Federation</address>
            </individInfo>
          </author>
          <author num="007">
            <authorCodes>
              <orcid>0000-0002-9600-2021</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Derzhavin Tambov State University</orgName>
              <surname>Yakovlev</surname>
              <initials>Alexey</initials>
              <address>Tambov, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Features of electrochemical behavior of an amorphous iron-based alloy in acidic solutions containing potassium rhodanide</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Impact of acidic solution with potassium rhodanide on partial electrode reactions was studied in AMAG-200 metallic glass (MG). Increase of acidity leads to growth of electrochemical reactions. With (mol/l) growth of potassium  rhodanide in hydrochloric solution, radius of a circular Nyquist diagram increases that testifies to better corrosion resistance of AMAG-200 MG in mentioned environment. Surface coverage ratio of rhodanide-ions increases up to the  0.9—0.99 maximum with adding of potassium rhodanide. Because of the physic-mechanical features of the solution, surface co-adsorption of rhodanide-ions, Сl-, H3O+ ions, and НSCN, Н2О molecules is possible that can lead to  competitive adsorption, noticing in diagrams.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.136</doi>
          <udk>544.2</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>potassium rhodanide</keyword>
            <keyword>electrochemistry</keyword>
            <keyword>acidic solutions</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.36/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>218-224</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Belyaev </surname>
              <initials>Kirill </initials>
              <email>kbelyaev@cfd.spbstu.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0002-2775-9864</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Garbaruk</surname>
              <initials>Andrei</initials>
              <email>agarbaruk@mail.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0001-9473-7430</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Golubkov</surname>
              <initials>Valentin</initials>
              <email>golubkovvd@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Strelets </surname>
              <initials>Michael </initials>
              <email>strelets@mail.rcom.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Application of global stability analysis to predicting characteristics of Tollmien-Schlichting waves</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">A numerical procedure is presented for computing characteristics of Tollmien–Schlichting (T-S) waves in the course of their downstream evolution. It is based on the Global Stability Analysis of steady solutions of the full compressible  Navier-Stokes equations and, therefore, does not have the restrictions associated with the parallel or quasi-parallel flow assumptions used in the classical methods of the linear stability analysis based on the boundary layer  approximation. Hence, the methodology may be applied not only to simple boundary layers on smooth surfaces but also to non-parallel flows, e.g. those over surfaces with irregularities (steps, gaps, etc.). The developed procedure is  validated by the comparison of the computed distribution of the T-S amplification factor (N-factor) in the zero pressure gradient boundary layer with the similar distribution computed based on the solution of the Orr-Sommerfeld equation and is shown to be accurate and robust.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.137</doi>
          <udk>532.517.3</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Global stability analysis</keyword>
            <keyword>Tollmien-Schlichting waves</keyword>
            <keyword>Boundary layer</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.37/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>225-230</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Tver State University</orgName>
              <surname>Myasnichenko</surname>
              <initials>Vladimir</initials>
              <email>viplabs@ya.ru</email>
              <address>Tver, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Tver State University</orgName>
              <surname>Sokolov</surname>
              <initials>Denis</initials>
              <email>dnsokolov@mail.ru</email>
              <address>Tver, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Tver State University</orgName>
              <surname>Sdobnyakov </surname>
              <initials>Nickolay </initials>
              <email>nsdobnyakov@mail.ru</email>
              <address>Tver, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Tver State University</orgName>
              <surname>Ershov</surname>
              <initials>Pavel</initials>
              <email>ershovpaul@gmail.com</email>
              <address>Tver, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Tver State University</orgName>
              <surname>Nepsha</surname>
              <initials>Nikita</initials>
              <email>nepsha.nikita@yandex.ru</email>
              <address>Tver, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>Tver State University</orgName>
              <surname>Veselov</surname>
              <initials>Alexey</initials>
              <address>Tver, Russian Federation</address>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <orgName>Tver State University</orgName>
              <surname>Veresov</surname>
              <initials>Sergey</initials>
              <email>veresovsergei@mail.ru</email>
              <address>Tver, Russian Federation</address>
            </individInfo>
          </author>
          <author num="008">
            <individInfo lang="ENG">
              <orgName>Institute of Information and Communication Technologies, Bulgarian Academy of Sciences</orgName>
              <surname>Mikhov</surname>
              <initials>Rossen</initials>
              <email>rmikhov@abv.bg</email>
              <address>Sofia, Bulgaria</address>
            </individInfo>
          </author>
          <author num="009">
            <individInfo lang="ENG">
              <orgName>Institute of Information and Communication Technologies, Bulgarian Academy of Sciences</orgName>
              <surname>Kirilov</surname>
              <initials>Leoneed</initials>
              <email>l_kirilov_8@abv.bg</email>
              <address>Sofia, Bulgaria</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Adaptation of the Monte-Carlo method for modeling layer-by-layer growth of clusters and nanoalloys</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this paper, we study the layer-by-layer growth process of a bimetallic nanoparticle Au-Ag having face-centered cubic and decahedron structure. The Monte Carlo method was chosen to implement this problem combined with an approach from molecular dynamics. The Monte Carlo method allows solving of problems with periodic boundary conditions. Computer implementations of the method have been developed in two different software products Metropolis (Tver State University) and Tsuyoyama (Institute of Information and Communication Technologies). Interaction between atoms is calculated using multi-body tight-binding model. It is established that the order of addition of atoms  (simultaneous or layered) affects the chemical ordering in the studied gold-silver equiatomic nanoalloys. In addition, the difference between the values of specific energy corresponding to Metropolis and Tsuyoyama software  becomes quite small, supporting the inference that the numerical procedure for the layer-by-layer growth is adequate.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.138</doi>
          <udk>539.21: 536.911+536.912</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>computer simulation</keyword>
            <keyword>Monte-Carlo method</keyword>
            <keyword>molecular dynamics method</keyword>
            <keyword>layer- by-layer growth</keyword>
            <keyword>nanoalloy</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.38/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>231-235</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Hilarov </surname>
              <initials>Vladimir</initials>
              <email>vladimir.hilarov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Damaskinskaya </surname>
              <initials>Ekaterina </initials>
              <email>Kat.Dama@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Fracture modeling with the discrete elements method</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The discrete element method (DEM) is used to reveal the main features of fracture in materials with different degree of heterogeneity. It is shown that this method adequately describes the main properties of materials in the fracture process such as brittle and ductile behavior, two-staged nature of fracture in heterogeneous materials, heterogeneity of the spatial distribution of local internal stresses depending on the degree of material heterogeneity.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.139</doi>
          <udk>538.951</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>materials fracture</keyword>
            <keyword>Discrete Elements Method</keyword>
            <keyword>heterogeneity</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.39/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>236-242</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Matyushenko</surname>
              <initials>Aleksey</initials>
              <email>alexey.matyushenko@gmail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0001-9473-7430</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Golubkov</surname>
              <initials>Valentin</initials>
              <email>golubkovvd@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0002-2775-9864</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Garbaruk</surname>
              <initials>Andrei</initials>
              <email>agarbaruk@mail.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Strelets </surname>
              <initials>Michael </initials>
              <email>strelets@mail.rcom.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Application of machine learning approach for turbulence model improvement for flow around airfoil near stall conditions</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The work is devoted to the improvement of the k-ω BSL turbulence model for the closure of Reynolds averaged Navier-Stokes (RANS) equations with the use of machine learning (ML) methods. The correction developed for this  model enhances its accuracy in calculating airfoil flows at stall angles of attack. Testing of the modified model on the flows around different airfoils reveals its superiority for this type of flows. The results demonstrate efficiency of the ML methods for turbulence model improvement.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.140</doi>
          <udk>532.517.4</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>machine learning</keyword>
            <keyword>RANS-modeling</keyword>
            <keyword>stall conditions</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.40/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>243-249</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>LLC “Numerical Calculations Russia”</orgName>
              <surname>Marakueva </surname>
              <initials>Olga </initials>
              <email>o.marakueva@rescent.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Keldysh Institute of Applied Mathematics of RAS</orgName>
              <surname>Duben</surname>
              <initials>Alexey</initials>
              <email>aduben@keldysh.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Accuracy of flow simulation in a low-pressure turbine using a laminar-turbulent transition model</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Nowadays, in order to decrease the aircraft engine weight, designers are forced to reduce the number of blades in the low-pressure turbine (LPT) since LPT is one of the heaviest components. The LPT operates in a wide range of  Reynolds numbers, which can reach values of less than 105 at cruise mode. The correct modeling of the laminar-turbulent transition (LT) in the boundary layer of LPT blades is crucial for predicting the efficiency characteristics. The aim of the study is to evaluate the capabilities of several variants of the LT model for modeling the flow over the LPT blade. The SST γ – R͠ eθt model with different closing correlations, which control the transition onset and transition  length, is considered. They are implemented in the research code NOISEtte. Validation of the realization is done on the basis of computations of flat plate flows from the ERCOFTAC database (experimental series T3). The flow in the  turbine high-loaded cascade T106C is considered. Together with the experimental data, the results of scale-resolving simulation are used as the reference. The influence of the choice of empirical correlations for the γ – R͠ eθt model  on the aerodynamic characteristics near the surface of the blade and at the outlet is evaluated. The results compared with those obtained using the same model and correlations within commercial code Numeca. The study revealed  that the results of the same empirical correlations obtained using different flow solvers differ noticeably from each other.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.141</doi>
          <udk>533.697</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>laminar-turbulent transition</keyword>
            <keyword>transition model</keyword>
            <keyword>low pressure turbine</keyword>
            <keyword>EBR</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.41/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>250-254</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Volgograd State University</orgName>
              <surname>Ivanchenko </surname>
              <initials>Gennadii </initials>
              <email>genaivanchenko@volsu.ru</email>
              <address>Volgograd, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Volgograd State University</orgName>
              <surname>Ten</surname>
              <initials>Anastasia</initials>
              <email>ten.anastasia@volsu.ru</email>
              <address>Volgograd, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Simulation of vibrations in hydrogenated diamond-like nanofilms</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The paper calculates the phonon spectrum of diamane [1] in the framework of the Hamilton formalism. The geometric model of diamane is represented as a two-layer graphene, but each C-atom has sp3 hybridization of external  electronic orbitals. The carbon atoms of one of the grapheme sublattices are covalently bound to the atoms of the second graphene layer, and the outer hydrogen atoms are covalently connected to the atoms of the second  sublattice. A diamane unit cell contains two carbon atoms from a graphene unit cell and one hydrogen atom. When constructing the model, the curvature of the graphene plane was taken into account as a result of the addition of  hydrogen atoms to it and the change in the hybridization of the external electronic orbitals of carbon atoms from sp2 to sp3. The interaction between hydrogen atoms was not taken into account.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.142</doi>
          <udk>534-16</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>diamane</keyword>
            <keyword>phonon spectrum</keyword>
            <keyword>dispersion equation</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.42/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>255-261</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Guseva</surname>
              <initials>Ekaterina</initials>
              <email>katia.guseva@inbox.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Shur </surname>
              <initials>Mikhail </initials>
              <email>mshur@cfd.spbstu.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0001-7011-6197</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University </orgName>
              <surname>Stabnikov </surname>
              <initials>Andrey </initials>
              <email>an.stabnikov@gmail.com</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>DLR (German Aerospace Center)</orgName>
              <surname>Ströer</surname>
              <initials>Philip</initials>
              <email>philip.stroeer@dlr.de</email>
              <address>Göttingen, Germany</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Travin</surname>
              <initials>Andrey</initials>
              <email>atravin@cfd.spbstu.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Zonal RANS-IDDES of asymmetric curved wake subjected to adverse pressure gradient</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Results are presented of high-fidelity scale-resolving simulations of an asymmetric curved turbulent wake subjected to adverse pressure gradient based on the zonal RANS-IDDES approach to turbulence representation. The work is performed within the framework of a joint German-Russian project “Complex Wake Flows” and presents a continuation of the computational/experimental studies of the straight symmetric wakes carried out by the same team during  2017-2019. The addition of asymmetry and longitudinal curvature to the flow model made it more representative in terms of reproducing the real wakes behind the three-element high-lift wing configurations used during takeoff and  landing of an aircraft. The reliability of the obtained results (both the mean flow parameters and the turbulent statistics) is supported by the grid-refinement study, whereas their comparison with the similar results of the RANS computations reveals a considerable discrepancy. This suggests the necessity of the improvement of the RANS models, which is planned for future work.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.143</doi>
          <udk>532.517.4</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>turbulent wakes</keyword>
            <keyword>adverse pressure gradient</keyword>
            <keyword>scale-resolving simulations of turbulence</keyword>
            <keyword>streamline curvature</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.43/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>262-268</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Voronezh State University of Forestry and Technologies named after G.F. Morozov</orgName>
              <surname>Kamalova</surname>
              <initials>Nina</initials>
              <email>rc@icmail.ru</email>
              <address>Russia, 394087, St., Voronezh, Timiryazev, 8 </address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Voronezh State University of Forestry and Technologies named after G.F. Morozov</orgName>
              <surname>Matveev</surname>
              <initials>Nikolay</initials>
              <email>nmtv@vglta.vrn.ru</email>
              <address>Russia, 394087, St. Voronezh, Timiryazev 8</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Voronezh State University of Forestry and Technologies named after G.F. Morozov</orgName>
              <surname>Evsikova</surname>
              <initials>Nataliya</initials>
              <email>natalyaevsikova@mail.ru</email>
              <address>Russia, 394087, St., Voronezh, Timiryazev, 8 </address>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0002-2148-1988</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Voronezh State University of Forestry and Technologies named after G.F. Morozov</orgName>
              <surname>Lisitsyn </surname>
              <initials>Viktor </initials>
              <email>viktor-lisicyn@yandex.ru</email>
              <address>Voronezh, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Voronezh State University of Forestry and Technologies named after G.F. Morozov</orgName>
              <surname>Vnukova </surname>
              <initials>Svetlana </initials>
              <email>vnukovasv@vglta.vrn.ru</email>
              <address>Voronezh, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>Based Electrical Technology, Industrial University of Ho Chi Minh City</orgName>
              <surname>Hoai Thuong Nguyen </surname>
              <email>nguyenthuongfee@iuh.edu.vn</email>
              <address>12 Nguyen Van Bao, Ward 4, Go Vap, Ho Chi Minh, Vietnam</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Formalized model of cellulose thermopolarization processes in natural wood in a non-uniform temperature field</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Temperature fluctuations are the most common and significant factor in the environmental impact on the properties of plastic and biocomposite materials. Therefore, the development of a fundamental concept of the conformation  mechanisms of long molecules under conditions of stable temperature gradient is one of the urgent problems of modern technologies in the field of creating materials with given properties. The purpose of the research was  substantiation of basic relation for conducting a computational experiment to determine the parameters of the kinetics process for thermally stimulated cellulose polarization within the framework of classical thermodynamics. The  objects of the experimental study were microsections of cylindrical birch wood with a thickness of about several hundred microns. During the measurement, the specimens were placed between two massive cylindrical measuring  electrodes. Heating was carried out at a constant rate, ensuring the constancy of the temperature gradient along the cut thickness. A potential difference was formed in the wood under experimental conditions due to pyroelectric and  piezoelectric effects in cellulose crystallites. The emerging electric field contributes to polarization of the side groups of macromolecules in the amorphous part of the cellulose. In this work, a basic model relation for calculating the  potential difference was obtained. The difference occurs in a thin wood specimen. Model efficiency was determined by the method of estimating the dimensionless Nash-Sutcliffe criterion. The proposed model can be applied for data  systematization on the thermally stimulated biocomposite polarization (with crystalline and amorphous components). Systematization is made by means of computational experiment to determine the parameters characterizing their  unique features.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.144</doi>
          <udk>53.01</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>microstructure</keyword>
            <keyword>crystallites</keyword>
            <keyword>composites</keyword>
            <keyword>cellulose macromolecules</keyword>
            <keyword>synthesized materials</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.44/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>269-274</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Mavlyutov Institute of Mechanics, Ufa Federal Research Centre of the RAS</orgName>
              <surname>Mukhutdinova </surname>
              <initials>Aygul </initials>
              <email>muhutdinova18@gmail.com</email>
              <address>Ufa, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Bashkir State University</orgName>
              <surname>Kireev </surname>
              <initials>Victor </initials>
              <email>kireev@anrb.ru</email>
              <address>Ufa, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Bashkir State University</orgName>
              <surname>Urmancheev </surname>
              <initials>Said </initials>
              <email>said52@mail.ru</email>
              <address>Ufa, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Influence of variable thermophysical properties on the flow of fluids in an annular channel under intensive heat exchange</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This paper considers the flow of viscous incompressible fluids in an annular channel, on the inner and outer surfaces of which intensive heat exchange conditions are set, mathematical formulation of which is reduced to boundary  conditions of the first kind. Differenttemperature dependencies of liquid viscosity are considered: monotonic (liquid viscosity decreases monotonously as the temperature rises) and anomalous (liquid viscosity depends on the  temperature in a non-monotonic way). Mathematical model comprises continuity, Navier- Stokes and energy conservation equations written in cylindrical coordinate system with axial symmetry considered in dimensionless form. The  equations of the mathematical model were solved numerically using the method of control volume. Because of numerical simulation, velocity diagrams in various sections of the annular channel, as well as distributions of temperature  and viscosity fields in the flow area, have been plotted. The influence of geometric parameters of the annular channel, heat exchange conditions on its walls and rheological parameters of the fluid on the flow pattern has been  determined. It is shown that in a liquid with a non-monotone dependence of viscosity on temperature, the hydrodynamic parameters of the flow significantly depend on the location of the high-viscosity flow region (the “viscous barrier”).</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.145</doi>
          <udk>532.517.2 ,532.133</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>annular channel</keyword>
            <keyword>thermophysical properties</keyword>
            <keyword>monotonic viscosity temperature dependence</keyword>
            <keyword>non-monotonic viscosity temperature dependence</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.45/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>275-280</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>St. Petersburg Electrotechnical University "LETI"</orgName>
              <surname>Charykov</surname>
              <initials>Nikolay</initials>
              <email>ncharykov@yandex.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>St. Petersburg Electrotechnical University "LETI"</orgName>
              <surname>Kuznetsov </surname>
              <initials>Vladimir </initials>
              <email>vvkuznetsov@inbox.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Gdańsk University of Technology</orgName>
              <surname>Sadowski</surname>
              <initials>Wojtek</initials>
              <email>w.sadowski.pg@gmail.com</email>
              <address>Gdańsk, Poland</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Academician I.P. Pavlov First St. Petersburg State Medical University</orgName>
              <surname>Semenov</surname>
              <initials>Konstantin</initials>
              <email>nchary@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>St. Petersburg Institute of Technology (Technical University)</orgName>
              <surname>Keskinov</surname>
              <initials>Victor</initials>
              <email>keski@inbox.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>St. Petersburg Institute of Technology (Technical University)</orgName>
              <surname>Blokhin</surname>
              <initials>Alexander</initials>
              <email>ncharyk@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <orgName>St. Petersburg State University of Architecture and Civil Engineering</orgName>
              <surname>Letenko</surname>
              <initials>Dmitriy</initials>
              <email>ncari@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="008">
            <individInfo lang="ENG">
              <orgName>East Kazakhstan State Technical University</orgName>
              <surname>Shamardanov</surname>
              <initials>Zhusulan</initials>
              <email>nchykov@yandex.ru</email>
              <address>Ust-Kamenogorsk, Republic of Kazakhstan</address>
            </individInfo>
          </author>
          <author num="009">
            <individInfo lang="ENG">
              <orgName>East Kazakhstan State Technical University</orgName>
              <surname>Shaymardanova</surname>
              <initials>Botogyz</initials>
              <email>char@gmail.com</email>
              <address>Ust-Kamenogorsk, Republic of Kazakhstan</address>
            </individInfo>
          </author>
          <author num="010">
            <individInfo lang="ENG">
              <orgName>East Kazakhstan State Technical University</orgName>
              <surname>Kulenova</surname>
              <initials>Natalja</initials>
              <email>arykov@yandex.ru</email>
              <address>Ust-Kamenogorsk, Republic of Kazakhstan</address>
            </individInfo>
          </author>
          <author num="011">
            <individInfo lang="ENG">
              <orgName>East Kazakhstan State Technical University</orgName>
              <surname>Sadenova</surname>
              <initials>Marjan</initials>
              <email>cxaz@gmail.com</email>
              <address>Ust-Kamenogorsk, Republic of Kazakhstan</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Equilibrium shift in chemical reactions</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">An original approach for describing chemical equilibrium shifts in systems of any physico-chemical nature has been developed. The mathematical expression of the equilibrium principle as formulated by the authors contains, instead of the standard heat and volume changes during a chemical reaction, mixing functions that in some special cases exceed the standard ones. It is shown that in systems with extremely large deviations from ideality (for example, in aqueous solutions of uranyl salts or water-soluble light fullerenes derivatives) the equilibrium shift principle developed by the authors may fundamentally differ from the wellknown Le Chatelier-Brown principle).</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.146</doi>
          <udk>544</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>chemical equilibrium</keyword>
            <keyword>Le Chatelier-Brown principle</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.46/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>281-287</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Center for Micro and Nanoscale Dynamics of Dispersed Systems, Ufa University of Science and Technology</orgName>
              <surname>Fatkullina </surname>
              <initials>Nazgul </initials>
              <email>nazgulbay@mail.ru</email>
              <address>Ust-Kamenogorsk, Republic of Kazakhstan</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Center for Micro and Nanoscale Dynamics of Dispersed Systems, Ufa University of Science and Technology</orgName>
              <surname>Solnyshkina</surname>
              <initials>Olga</initials>
              <email>olgasolnyshkina@gmail.com</email>
              <address>Ufa, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Center for Micro and Nanoscale Dynamics of Dispersed Systems, Ufa University of Science and Technology</orgName>
              <surname>Bulatova </surname>
              <initials>Aiguzel </initials>
              <email>bulatova29@yandex.ru</email>
              <address>Ufa, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Kutateladze Institute of Thermal Physics</orgName>
              <surname>Andryuschenko</surname>
              <initials>Vladimir</initials>
              <email>vladimir.andrushenko@gmail.com</email>
              <address>Novosibirsk, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">3D simulation of deformable particle dynamics in channel with hydrodynamic traps</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The importance of adequate simulation of dispersed systems in microchannels with traps is due to the need to solve applied problems arising in the design of microfluidic devices. Depending on the purposes of the devices, the  geometry configuration of hydrodynamic traps and their spatial arrangement is chosen. The present work is dedicated to the study of the dynamics of dispersed particles in the viscous fluid flow in a microchannel with hydrodynamic traps. The computational approach is based on the Boundary Element Method, accelerated using the Fast Multipole Method on heterogeneous computing architectures. Simulation results and details of the method are discussed. In  addition, the influence of the distance between trap rows and their spatial arrangement on the flow pattern in the microchannel has been investigated.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.147</doi>
          <udk>532.5, 519.6</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Stokes equations</keyword>
            <keyword>hydrodynamic traps</keyword>
            <keyword>microfluidics</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.47/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>288-294</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Center for Micro and Nanoscale Dynamics of Dispersed Systems, Ufa University of Science and Technology</orgName>
              <surname>Bulatova </surname>
              <initials>Aiguzel </initials>
              <email>bulatova29@yandex.ru</email>
              <address>Ufa, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Center for Micro and Nanoscale Dynamics of Dispersed Systems, Ufa University of Science and Technology</orgName>
              <surname>Solnyshkina</surname>
              <initials>Olga</initials>
              <email>olgasolnyshkina@gmail.com</email>
              <address>Ufa, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Center for Micro and Nanoscale Dynamics of Dispersed Systems, Ufa University of Science and Technology</orgName>
              <surname>Fatkullina </surname>
              <initials>Nazgul </initials>
              <email>nazgulbay@mail.ru</email>
              <address>Ust-Kamenogorsk, Republic of Kazakhstan</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Numerical study of the rheological characteristics of dispersed systems in shear flow using the boundary element method</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Dispersed systems are widely used in chemical, biochemical and pharmaceutical industries. This work is dedicated to the study of the dependence of macroscopic parameters of emulsions, such as effective viscosity, on the  microlevel structure and physical properties of emulsion droplets. The numerical approach is based on the accelerated boundary element method in three dimensions. In this paper, we consider the dynamics of two close deformable droplets of equal radius in the volume of a viscous incompressible fluid under the action of a shear flow. Time evolution of minimal distance between droplet surfaces has been considered. A parametric study of the dispersed phase  contribution to the stress tensor of a dispersed system as a whole, as well as the first and second differences of normal stresses, is conducted.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.148</doi>
          <udk>532.5; 519.6</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>dispersed systems</keyword>
            <keyword>shear flow</keyword>
            <keyword>rheology</keyword>
            <keyword>boundary element method</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.48/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>295-300</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Central Aerohydrodynamic Institute (TsAGI), </orgName>
              <surname>Pigusov </surname>
              <initials>Evgeny </initials>
              <email>pigusoff@gmail.com</email>
              <address>Zhukovsky, Moscow Region, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Central Aerohydrodynamic Institute (TsAGI)</orgName>
              <surname>Pavlenko</surname>
              <initials>Olga</initials>
              <email>olga.v.pavlenko@yandex.ru</email>
              <address>Zhukovsky, Moscow Region, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Central Aerohydrodynamic Institute (TsAGI)</orgName>
              <surname>Kornushenko</surname>
              <initials>Alexander</initials>
              <email>avkornushenko@yandex.ru</email>
              <address>Zhukovsky, Moscow Region, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Central Aerohydrodynamic Institute (TsAGI)</orgName>
              <surname>Vinogradov</surname>
              <initials>Oleg</initials>
              <email>oleg.vinogradov@tsagi.ru</email>
              <address>Zhukovsky, Moscow Region, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Moscow Institute of Physics and Technology (MIPT)</orgName>
              <surname>Reslan</surname>
              <initials>Mostafa</initials>
              <email>reslan.mostafa97@gmail.com</email>
              <address>Dolgoprudny, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Effect of running propellers on flow and hinge moments of trailing edge mechanization of high aspect ratio</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This paper presents the results of a numerical study of the flow of an airplane with a mechanized high aspect ratio wing when the wingtips blown by jets of propellers. The layout of the aircraft with a pulling two-bladed propeller, as  well as without installed propellers, is investigated. The effect of propeller slipstream on the airplane aerodynamic characteristics and the hinge moments of the flaps and ailerons is shown. It is shown that the external aileron is exposed to the greatest impact of the propeller slipstream. An increase in the underpressure on the upper surface and a strongly increasing pressure on the lower windward side of the aileron leads to a significant increase in the  hinge moment of the external aileron when blown by jets of propeller.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.149</doi>
          <udk>629.735.33</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>pulling airscrew</keyword>
            <keyword>hinge moment</keyword>
            <keyword>mechanization of the wing</keyword>
            <keyword>high aspect ratio wing</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.49/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>301-308</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Moscow State University of Food Production</orgName>
              <surname>Tashayev </surname>
              <initials>Yuriy </initials>
              <email>tashayevyn@mgupp.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Working process calculation of the control circuit for pulsed operation regime of the MPD accelerator</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">A circuit for controlling the discharge current of an MPD accelerator based on the Morgan circuit is considered. It is shown that theoretically operation regime of the accelerator, depending on the parameters of the circuit, can be  stationary, modulation, and pulsed. The necessary condition for the accelerator operation in the periodic mode is established. Calculations of the pulse shape of the discharge current are carried out. The experimentally observed pulse forms are compared with the calculated ones.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.150</doi>
          <udk>533.95-629.7.036</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>plasma accelerators</keyword>
            <keyword>pulsed mode</keyword>
            <keyword>discrete plasma formations</keyword>
            <keyword>discharge current</keyword>
            <keyword>pulse shape</keyword>
            <keyword>Morgan scheme</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.50/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>309-314</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Lebedev</surname>
              <initials>Sergey</initials>
              <email>lebedev.sergey@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Priobrazhenskii</surname>
              <initials>Sergei</initials>
              <email>sereyozha@yandex.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Plotnikov</surname>
              <initials>Andrey</initials>
              <email>xdernx@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Mynbaeva </surname>
              <initials>Marina </initials>
              <email>mgm@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Lebedev</surname>
              <initials>Alexander</initials>
              <email>shura.lebe@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Numerical simulation of the temperature field distribution in the epitaxial graphene growth setup</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">An approach is presented to optimizing the growth of graphene on silicon carbide (SiC) substrates by using numerical simulation methods. The presented models in axisymmetric approximation show good convergence with  experimental results and allow the studies of temperature fields inside closed growth cells. It is concluded that the use of numerical calculation methods is promising for optimizing the design of a technological setup for graphene  growth by sublimation of the SiC surface.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.151</doi>
          <udk>536.12</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>graphene</keyword>
            <keyword>silicon carbide</keyword>
            <keyword>simulation</keyword>
            <keyword>temperature field distribution</keyword>
            <keyword>sublimation growth</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.51/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>315-319</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Central Aerohydrodynamic Institute (TsAGI), </orgName>
              <surname>Pigusov </surname>
              <initials>Evgeny </initials>
              <email>pigusoff@gmail.com</email>
              <address>Zhukovsky, Moscow Region, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Central Aerohydrodynamic Institute (TsAGI)</orgName>
              <surname>Golovkin</surname>
              <initials>Mikhail</initials>
              <email>spintest@tsagi.ru</email>
              <address>Zhukovsky, Moscow Region, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Central Aerohydrodynamic Institute (TsAGI)</orgName>
              <surname>Pavlenko</surname>
              <initials>Olga</initials>
              <email>olga.v.pavlenko@yandex.ru</email>
              <address>Zhukovsky, Moscow Region, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Flow modelling of slotted slat on spin model</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The problem of modelling the airflow through the gap between a main wing part and a slat is investigated. Numerical studies of the aerodynamics of a wing with a slat at beyond stall angles characteristic for a spin are carried out. The  features of the flow near the slotted slat of the wing model and full-scale wing are revealed. It is shown that with the observance of the geometric similarity on the spin model, the flow and aerodynamic characteristics are  somewhat distorted, respectively. It is proposed to simulate the flow around the gap according to the local jet momentum coefficient of the full-scale aircraft and its model.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.152</doi>
          <udk>629.735.33.05</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>small-size aircraft model</keyword>
            <keyword>high angles of attack</keyword>
            <keyword>spin</keyword>
            <keyword>similarity theory</keyword>
            <keyword>low Reynolds numbers</keyword>
            <keyword>jet momentum coefficient</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.52/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>320-325</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Lytaev </surname>
              <initials>Aleksandr </initials>
              <email>sas-lyt@ya.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Popov</surname>
              <initials>Igor</initials>
              <email>popov1955@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Numerical simulation of waveguide couplers using the coupled mode theory for quantum gates implementation</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The directional coupler formed by a system of two dual-mode optical waveguides is studied with the aim of being used as a switcher for a nonlinear optical CNOT quantum gate. The paper focuses on simulation of behaviour of  electromagnetic radiation in regions of juxtaposition and separation, that surround the main coupling region and are composed of several circularly bent waveguides. The modes of bent waveguides are approximated as linear combinations of the guided and leaky modes in the straight waveguide with the same width and refractive indices. An advanced coupled mode theory is applied to describe the coupling between bent parts of the coupler. The system  of differential equations for amplitude coefficients is solved with a finite difference method. The influence of signal distortions is analyzed. The results obtained are applied to correct the geometrical parameters of the coupler. The computational error of the whole device due to waveguide bends distortions is estimated to not exceed 5%.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.153</doi>
          <udk>519.6</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>waveguides</keyword>
            <keyword>quantum computing</keyword>
            <keyword>coupled mode theory</keyword>
            <keyword>CNOT quantum gate</keyword>
            <keyword>bent waveguides</keyword>
            <keyword>leaky modes</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.53/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>326-330</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Volgograd State University</orgName>
              <surname>Klikunova </surname>
              <initials>Anna </initials>
              <email>klikunova@volsu.ru</email>
              <address>Volgograd, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Volgograd State University</orgName>
              <surname>Khoperskov</surname>
              <initials>Alexander</initials>
              <email>khoperskov@volsu.ru</email>
              <address>Volgograd, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Calculation of hydrological connection between the Volga river and the Akhtuba river using numerical hydrodynamic modeling</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The hydrological regime of the Volga river near the Akhtuba river source below the dam of the Volga hydroelectric power station is studied. We use a hydrodynamic model based on the numerical solution of shallow water equations  to study the dynamics of discharge water during spring floods. The main result is the determination of the hydrological connection between the water discharge (hydrograph QV(t)) of the dam of the Volga HPP and the hydrograph of  the Akhtuba river source (QA(t)) depending on the dynamics of the water flow from the Volgograd reservoir to the Volga river. Numerical simulations of the spring flooding process were performed for the northern part of the Volga- Akhtuba floodplain for 2016, 2017 and 2021. The relationship between QV and QA is non-linear due to the peculiarities of the riverbeds and the interfluve topography. The results are important for developing solutions aimed at  preserving the Volga-Akhtuba floodplain.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.154</doi>
          <udk>532.5</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>hydrological regime</keyword>
            <keyword>hydrodynamic model</keyword>
            <keyword>spring flooding</keyword>
            <keyword>hydrograph</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.54/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>331-335</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Khavin </surname>
              <initials>Vasiliy </initials>
              <email>havinvasilij@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Popov</surname>
              <initials>Alexei</initials>
              <email>a.popov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Teplova</surname>
              <initials>Natalia</initials>
              <email>natalia.teplova@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Troshin</surname>
              <initials>Grigorii</initials>
              <email>paladinbubble@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Gusakov</surname>
              <initials>Evgeniy</initials>
              <email>evgeniy.gusakov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">One-dimensional Fokker-Planck equation with relativistic effects for numerical simulations</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This paper presents considerations on the topic of creating one-dimensional Fokker-Planck equation with relativistic effects. The derivation of two-dimensional relativistic equation and an attempt to average to the one-dimensional  equation are demonstrated. The results are used for numerical simulations of LHCD.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.155</doi>
          <udk>533.9.01</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>tokamak</keyword>
            <keyword>current drive</keyword>
            <keyword>helicon</keyword>
            <keyword>electron distribution function</keyword>
            <keyword>relativistic Fokker- Planck equation</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.55/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>336-340</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Ignatenko </surname>
              <initials>Viktor </initials>
              <email>vityaig@yandex.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0001-7608-7120</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Smirnovsky</surname>
              <initials>Alexander</initials>
              <email>smirta@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Study of the effect of dynamic and temperature inhomogeneities on epitaxial processes in a horizontal CVD reactor</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In order to investigate the effect of temperature and velocity inhomogeneities at the reactor inlet on the susceptor growth rate distribution, a numerical simulation of the flow in a horizontal CVD reactor was carried out. It was obtained  that the velocity inhomogeneity can reach 60%, and this can considerably affect the growth rate distribution on susceptor. To simulate the temperature inhomogeneities, the temperature distribution at the reactor inlet was set  separately for the bottom and the main inlet. The temperature inhomogeneity at the bottom inlet affects the growth rate distribution more drastically than at the main inlet. This influence is quite strong and should be taken into account for accurate simulation of the flow and growth processes in similar horizontal CVD reactors.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.156</doi>
          <udk>621.315.592.9+532.5-1/-9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>ANSYS Fluent</keyword>
            <keyword>CFD</keyword>
            <keyword>numerical simulation</keyword>
            <keyword>MOVPE</keyword>
            <keyword>CVD</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.56/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>341-345</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Ilkiv</surname>
              <initials>Igor </initials>
              <email>fiskerr@ymail.com</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Kotlyar</surname>
              <initials>Konstantin</initials>
              <email>konstantin21kt@gmail.com</email>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <orcid>0000-0002-1571-209X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Kirilenko</surname>
              <initials>Demid</initials>
              <email>demid.kirilenko@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Sharov</surname>
              <initials>Vladislav</initials>
              <email>vl_sharov@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Reznik</surname>
              <initials>Rodion </initials>
              <email>moment92@mail.ru</email>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Cirlin</surname>
              <initials>George </initials>
              <email>george.cirlin@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Germanium nanocrystals were grown on GaN nanowire sidewalls by molecular beam epitaxy. The transmission electron microscopy measurements revealed the formation of 6–10 nm in size Ge quantum dots, which exhibited diamond  cubic crystal structure. Raman spectroscopy indicate that uncapped Ge QDs are stress relaxed compared to ones additionally capped with GaN.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.157</doi>
          <udk>538.975</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>nanowire</keyword>
            <keyword>molecular beam epitaxy</keyword>
            <keyword>germanium</keyword>
            <keyword>semiconductors</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.57/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>346-350</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Institute for Physics of Microstructures RAS</orgName>
              <surname>Sachkov </surname>
              <initials>Yuri </initials>
              <email>Sachkov@ipmras.ru</email>
              <address>Afonino, Nizhny Novgorod region, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Institute for Physics of Microstructures RAS</orgName>
              <surname>Yunin</surname>
              <initials>Pavel</initials>
              <email>yunin@ipmras.ru</email>
              <address>Afonino, Nizhny Novgorod region, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Institute for Physics of Microstructures RAS</orgName>
              <surname>Travkin</surname>
              <initials>Vladislav</initials>
              <email>trav@ipmras.ru</email>
              <address>Afonino, Nizhny Novgorod region, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Conductivity in nanostructured films of paramagnetic manganese phthalocyanine</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Manganese (II) phthalocyanine MnPc is known for its interesting magnetic properties and diverse coordination chemistry, but little is known about its conductivity. In our previous work, we observed how introduction of a permanent  magnetic field during deposition modifies the microcrystalline structure of the growing MnPc films. In this paper, we have shown that the magnetic field, together with the substrate temperature, is responsible for the lateral current in  the two-terminal MnPc-based cells with interdigital contacts to change, while the influence of atmospheric environment and illumination is much less noticeable.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.158</doi>
          <udk>539.18</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>сonductivity</keyword>
            <keyword>vacuum evaporation</keyword>
            <keyword>film</keyword>
            <keyword>manganese phthalocyanine</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.58/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>351-355</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Levina </surname>
              <initials>Svetlana </initials>
              <email>levina@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Filimonov</surname>
              <initials>Eugeniy</initials>
              <email>efilimonov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Emelyanov</surname>
              <initials>Victor</initials>
              <email>resso2003@bk.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Shvarts</surname>
              <initials>Maxim</initials>
              <email>Shvarts M.Z.</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Determination of subcell parameters for multijunction solar cells at radiation exposure</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Based on the electroluminescent method and the two-diode equivalent circuit model of a solar cell, the current-voltage characteristics of wide-bandgap subcells in the structure with the corresponding parameters of saturation dark  currents are obtained. In addition, the approach has been tested on samples exposed to various radiation doses, which made it possible to determine the degradation rate of the photovoltaic characteristics of solar cells.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.159</doi>
          <udk>53.043</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>multijunction solar cell</keyword>
            <keyword>current-voltage characteristics</keyword>
            <keyword>saturation dark currents</keyword>
            <keyword>radiation exposure</keyword>
            <keyword>degradation</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.59/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>356-362</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Nelson </surname>
              <initials>Dmitrii </initials>
              <email>d.nelson@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Starukhin</surname>
              <initials>Anatoly</initials>
              <email>a.starukhin@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Kurdyukov</surname>
              <initials>Dmitry</initials>
              <email>kurd@gvg.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Stovpiaga </surname>
              <initials>Ekaterina </initials>
              <email>kattrof@gvg.ioffe.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Thermally induced depolarization of fluorescence of matrix-isolated MoS2 nanodots</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The temperature and viscosity dependences of polarized luminescence of colloidal solutions of MoS2 nanodots in organic solvents have been studied. It is shown that under conditions of linearly polarized excitation, an ensemble of  MoS2 nanodots behaves as a system of linear oscillators, the initial orientation of which is violated due to the Brownian rotation of the nanodots. Within the framework of the Levshin-Perrin model, the sizes of luminescent nanodots,  which vary with the radiation wavelength, are estimated. The data obtained are in agreement with the estimates of the nanodot sizes based on the quantum size effect. It is shown that the polarization features of radiative transitions in  MoS2 nanodots differ from the properties of radiative transitions in MoS2 monolayers.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.160</doi>
          <udk>538.915</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>nanodots</keyword>
            <keyword>polarized luminescence</keyword>
            <keyword>quantum size effect</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.60/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>363-368</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Krichevtsov </surname>
              <initials>Boris </initials>
              <email>boris@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Korovin</surname>
              <initials>Alexander</initials>
              <email>Amkorovin@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Suturin</surname>
              <initials>Sergey</initials>
              <email>Suturin@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Sokolov</surname>
              <initials>Nikolai</initials>
              <email>nsokolov@fl.ioffe.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Nanoscale layers of hexaferrite BaFe12O19 grown by laser molecular beam epitaxy: growth, crystal structure and magnetic properties</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Single-crystal 50 and 300 nm thick layers of BaM hexaferrite BaFe12O19 were synthesized by laser molecular beam epitaxy method on α-Al2O3 (0001) substrates. Crystallization process was monitored in situ by RHEED and crystal  structure was analyzed using three-dimensional mapping of diffraction patterns. The film surface morphology was investigated by atomic force microscopy. It was shown that the “as grown” structures exhibit hexaferrite structure but  reveal violation of the long-range order, which is highly improved by the post growth annealing. Magnetic properties were studied by magnetooptical polar Kerr effect. Both the “as grown” and annealed structures were examined.  After annealing, BaM hexaferrite films demonstrate square-type out-of-plane magnetic hysteresis loops indicating the presence of strong uniaxial magnetic anisotropy and remarkable pinning of domain walls.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.161</doi>
          <udk>537.622.6</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>hexaferrite</keyword>
            <keyword>molecular beam epitaxy</keyword>
            <keyword>RHEED</keyword>
            <keyword>atomic force microscopy</keyword>
            <keyword>magnetooptical Kerr effect</keyword>
            <keyword>magnetic properties</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.61/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>369-373</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Bogdanov </surname>
              <initials>Alexander </initials>
              <email>a.bogdanov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Scientific and Industrial Enterprise “Melitta” Ltd</orgName>
              <surname>Gavrish</surname>
              <initials>Sergey</initials>
              <email>svgavr@list.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Martsinovsky</surname>
              <initials>Artemiy</initials>
              <email>amartsinovsky@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Stolyarov</surname>
              <initials>Igor'</initials>
              <email>igor-stolyarov@yandex.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Application of cesium lamps for indoor lighting and preventive ultraviolet irradiation</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">An analysis of the radiation from cesium lamps has shown that the spectrum of such lamps is determined by the recombination continuum. This spectrum is close to the spectrum of the Sun not only in the visible, but also in the  ultraviolet in the A and B ranges. This makes it possible to create environmentally friendly energy-efficient lighting systems with constant UV radiation based on these lamps to compensate for the lack of ultraviolet radiation at high  latitudes and when working indoors without natural light. The advantages of such systems are considered in comparison with existing dual systems using conventional visible light sources and special erythemic fluorescent mercury  lamps.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.162</doi>
          <udk>621.327.53</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>gas discharge lamps</keyword>
            <keyword>cesium pulse-periodic discharge</keyword>
            <keyword>luminous efficacy</keyword>
            <keyword>ultraviolet irradiation</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.62/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>374-379</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Lubyankina </surname>
              <initials>Ekaterina </initials>
              <email>katylubyankina@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University </orgName>
              <surname>Babich </surname>
              <initials>Ekaterina </initials>
              <email>babich.katherina@gmail.com</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Alferov University </orgName>
              <surname>Lipovskii</surname>
              <initials>Andrey</initials>
              <email>lipovskii@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Pesticides detection by SERS using dendritic structures grown in glass</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">We demonstrate that dendritic structures formed in glass by electrolysis of silver ions-enriched glass allow detection of low concentration of pesticide thiram using surface- enhanced Raman scattering spectroscopy. Thiram detection  is an important issue due to its toxicity for humans. Silver ions were embedded in glass using Ag+↔Na+ ion exchange procedure. Electrolysis was performed at 250 ˚C under 600 V and resulted in formation of silver dendrites under the glass surface. To remove the surface glass layer and ensure the access of pesticide to the dendritic structures for Raman spectroscopy we etched the glass in low-concentrated HF solution. Pesticide was adsorbed on the  surface of the dendrites via drying a droplet of its aqueous solution. The detection limit and Raman enhancement were estimated, being 4.6∙10-10 g/mm2 (about a monolayer) and ~ 4·105, respectively. The influence of the  morphology of the dendritic structures on Raman signal distribution and enhancement were also studied.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.163</doi>
          <udk>538.97</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>surface enhanced Raman scattering spectroscopy</keyword>
            <keyword>dendrites</keyword>
            <keyword>electrolysis</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.63/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>380-384</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Arteev </surname>
              <initials>Dmitri </initials>
              <email>ArteevDS@mail.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Sakharov</surname>
              <initials>Alexey</initials>
              <email>val@beam.ioffe.rssi.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Nikolaev</surname>
              <initials>Andrei</initials>
              <email>Aen@mail.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <surname>Zavarin</surname>
              <initials>Evgenii </initials>
              <email>EZavarin@mail.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Tsatsulnikov</surname>
              <initials>Andrey</initials>
              <email>andrew@beam.ioffe.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">2DEG-based multilayer AlGaN/GaN heterostructures with lowered sheet resistance</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The influence of n-type doping of the AlGaN barrier layer in AlGaN/AlN/GaN single- and triple-channel heterostructures on their electrical properties was studied. It was found that the optimal thickness of i-AlGaN spacer is 3 nm, and  the Si concentration in n-AlGaN is 7·1018 cm-3. The lowest predicted sheet resistance at room temperature for the triple-channel structure of the optimal design is ~ 90 Ω sq-1, three times lower than that of the single-channel  structure.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.164</doi>
          <udk>621.315.592</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>GaN</keyword>
            <keyword>AlGaN</keyword>
            <keyword>HEMT</keyword>
            <keyword>2DEG</keyword>
            <keyword>multichannel</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.64/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>385-388</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Vaulin </surname>
              <initials>Nikita </initials>
              <email>nikitavaylin@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Institute for Analytical Instrumentation RAS</orgName>
              <surname>Afonicheva</surname>
              <initials>Polina</initials>
              <email>polina.afonicheva@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Lebedev</surname>
              <initials>Denis </initials>
              <email>denis.v.lebedev@gmail.com</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Bukatin</surname>
              <initials>Anton</initials>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0001-9792-045X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Mukhin</surname>
              <initials>Ivan</initials>
              <email>muhin_is@spbstu.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Study of ion transport in single solid state nanopores formed by optical and ion lithography</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This work studies the transport properties of solid-state nanopores. Nanopores with a diameter of 35–40 nm formed in a thin “free-standing” silicon nitride membrane of 300 nm thick. An experimental setup has been developed to  study the transport characteristics of single nanopores. Based on the results of electrical measurements, the pore conductivity was calculated for concentrations of KCl electrolyte in the range of 10-4–1M. An increase of nanopore  conductivity was observed with an increase of the electrolyte concentration above 10-2 M. This dependence can be explained by the electrical double layer overlapping that leads to appearance of a charged region inside the  nanopore.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.165</doi>
          <udk>538.975</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>nanopores</keyword>
            <keyword>solid state nanopores</keyword>
            <keyword>microfluidic</keyword>
            <keyword>ion transport</keyword>
            <keyword>optical lithography</keyword>
            <keyword>ion lithography</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.65/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>389-392</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Institute for Analytical Instrumentation RAS</orgName>
              <surname>Afonicheva</surname>
              <initials>Polina</initials>
              <email>polina.afonicheva@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Vaulin </surname>
              <initials>Nikita </initials>
              <email>nikitavaylin@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Lebedev</surname>
              <initials>Denis </initials>
              <email>denis.v.lebedev@gmail.com</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Bukatin</surname>
              <initials>Anton</initials>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0001-9792-045X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Mukhin</surname>
              <initials>Ivan</initials>
              <email>muhin_is@spbstu.ru</email>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>Institute for Analytical Instrumentation RAS</orgName>
              <surname>Evstrapov</surname>
              <initials>Anatoly</initials>
              <email>an_evs@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Investigation of ion transport in solid-state nanopores upon optical radiation</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">We developed a technique for the fabrication of single nanopores with gold bowtie nanoantennas in a free-standing SiN membrane of arbitrary thickness. Single pores with a diameter of 30–50 nm and a length of 300 nm were  fabricated. Studies of ion transport in solid-state nanopores upon optical radiation showed that the enhancement of an electromagnetic field by plasmon structures near nanopores leads to the increase in nanochannel conductivity.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.166</doi>
          <udk>538.975</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>ion transport</keyword>
            <keyword>nanopore</keyword>
            <keyword>nanochannel</keyword>
            <keyword>SiN membrane</keyword>
            <keyword>plasmon structure</keyword>
            <keyword>gold nanoantennas</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.66/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>393-397</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>St. Petersburg Electrotechnical University "LETI"</orgName>
              <surname>Khalugarova </surname>
              <initials>Kamilya </initials>
              <email>kamilya_kh@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <orcid>0000-0002-3469-5897</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Kondratev</surname>
              <initials>Valeriy</initials>
              <email>kvm_96@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Spivak</surname>
              <initials>Yulia</initials>
              <email>ymkanageeva@yandex.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Kabardino–Balkarian State University</orgName>
              <surname>Shomakhov</surname>
              <initials>Zamir</initials>
              <email>shozamir@yandex.ru</email>
              <address>Nalchik, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <orcid>0000-0001-6500-5492</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>St. Petersburg Electrotechnical University "LETI"</orgName>
              <surname>Moshnikov</surname>
              <initials>Vyacheslav</initials>
              <email>vamoshnikov@mail.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Compositions based on porous silicon and nickel oxide obtained by cooperative synthesis</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this work, nanocompositions based on porous silicon and nickel oxide were obtained by cooperative synthesis with and without the addition of alcohol. The XPS method was used to study the surface of the samples, and nickel  oxide particles were also studied by the SEM method. The results showed the effect of the difference in synthesis on the ratio of elements in the composition of the resulting NiO-porSi samples.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.167</doi>
          <udk>620.22</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>nickel oxide</keyword>
            <keyword>porous silicon</keyword>
            <keyword>X-ray photoelectron spectroscopy</keyword>
            <keyword>scanning electron microscopy</keyword>
            <keyword>energy-dispersive X-ray spectroscopy</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.67/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>398-403</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Gromov</surname>
              <initials>Ivan</initials>
              <email>gromov-24-2@yandex.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Physical Technical Institute of the Russian Academy of Sciences</orgName>
              <surname>Kuleshova </surname>
              <initials>Tatiana</initials>
              <email>www.piter.ru@bk.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Kuznetsov</surname>
              <initials>Yurii</initials>
              <email>kuznets@ms.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Lapushkin </surname>
              <initials>Mikhail </initials>
              <email>lapushkin@ms.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Samsonova</surname>
              <initials>Natalia</initials>
              <email>kolomna.88@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Electron-stimulated desorption of lithium and potassium atoms in the adsorption of lithium and potassium atoms on gold</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The electron-stimulated desorption of lithium and potassium atoms from LixAuy and KxAuy layers on the surface of gold adsorbed on W(100) has been studied. The yield of electron-stimulated desorption of Li and K atoms was  measured by a direct method as a function of the electron energy, the concentration of Li and K atoms, and the thickness of the Au film. The formation of semiconductor intermetallic compounds LixAuy and KxAuy is considered.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.168</doi>
          <udk>538.971</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>electron-stimulated desorption</keyword>
            <keyword>intermetallic</keyword>
            <keyword>2D-layers</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.68/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>404-410</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Aksenova </surname>
              <initials>Valeriya </initials>
              <email>valeriya11-12@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Smirnova</surname>
              <initials>Irina</initials>
              <email>irina@quantum.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Markov</surname>
              <initials>Lev</initials>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Pavluchenko</surname>
              <initials>Alexey</initials>
              <email>alexey.pavluchenko@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>JSC Koltsov’s Design Bureau</orgName>
              <surname>Kolokolov</surname>
              <initials>Daniil</initials>
              <email>k.d@koltsov-kb.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>JSC Koltsov’s Design Bureau</orgName>
              <surname>Volkov</surname>
              <initials>Dmitriy</initials>
              <email>diman15656@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Wettability of transparent conductive nanostructured ITO and ITO/Al2O3 coatings</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this paper, the water wettability of nanostructured ITO films, including those with Al2O3 protective layers, was studied. Nanostructured ITO films were deposited by magnetron sputtering and electron beam evaporation on the  preheated surface of a glass substrate, after which they were additionally annealed in a nitrogen atmosphere for 10 min. Some samples were covered with an aluminium oxide layer with various thicknesses. The Al2O3 protective coating was fabricated by atomic layer deposition. To estimate the wettability, we measured the contact angles of water drops on the horizontal surface of the films. The results show that, depending on the deposition method and  thickness, structured ITO films can be characterized both by hydrophilic and by hydrophobic properties. In the case of covering of the nanostructured ITO film deposited by the electron beam evaporation with a protective coating of  aluminium oxide, the hydrophobic properties of structured ITO films can be significantly improved and a superhydrophobic coating can be obtained.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.169</doi>
          <udk>532.64.08</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>transparent conductive films</keyword>
            <keyword>indium-tin oxide</keyword>
            <keyword>wettability</keyword>
            <keyword>atomic layer deposition</keyword>
            <keyword>aluminium oxide</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.69/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>411-415</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Salii </surname>
              <initials>Roman </initials>
              <email>r.saliy@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <surname>Mintairov</surname>
              <initials>Mikhail</initials>
              <email>mamint@mail.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Mintairov</surname>
              <initials>Sergei</initials>
              <email>mintairov@scell.ioffe.ru</email>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Nakhimovich</surname>
              <initials>Maria</initials>
              <email>nmar@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <surname>Shvarts</surname>
              <initials>Maxim</initials>
              <email>Shvarts M.Z.</email>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <surname>Kalyuzhniy</surname>
              <initials>Nikolai</initials>
              <email>nickk@mail.ioffe.ru</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Influence of GaP compensating layers on the characteristics of GaAs photovoltaic converters with InGaAs quantum dot arrays</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this work, we studied the influence of GaP compensating layers on the characteristics of GaAs solar cells with InGaAs quantum dot arrays. An increase in the overall level of quantum efficiency in the absorption range of quantum  dots (870–1000 nm) by more than 10% has been demonstrated when GaP layers are embedded in GaAs intermediate layer (spacer) of a quantum dot array. It was also shown that in this case a noticeable increase in the open-circuit voltage can be achieved at high solar concentration.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.170</doi>
          <udk>620.3, 620.9, 539.23, 621.315.592</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>GaAs</keyword>
            <keyword>InGaAs</keyword>
            <keyword>GaP</keyword>
            <keyword>solar cell</keyword>
            <keyword>quantum dots</keyword>
            <keyword>MOVPE</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.70/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>416-421</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Mitina </surname>
              <initials>Daria </initials>
              <email>dary.mitina@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Verbitskaya</surname>
              <initials>Elena</initials>
              <email>elena.verbitskaia@cern.ch</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Fadeeva </surname>
              <initials>Nadezda </initials>
              <email>fadeeva.nadezda@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Eremin</surname>
              <initials>Igor</initials>
              <email>ereminpti@hotmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Bragg peak effect on the electrical characteristics of Si detectors irradiated with medium energy 40Ar ions</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The investigation is focused on the simulation of the I-V characteristics of Si p+-n-n+ diodes irradiated with medium-energy 40Ar ions whose range is less than the detector thickness. The characteristics were simulated by considering the distribution of the current generating defects related to the profile of primary vacancies with a sharply rising density at the end of the ion track, which was defined by using the TRIM software. The defects involved in the simulation  were two radiation-induced acceptors, the one positioned at EC ‒ 0.42 eV and the other in the lower half of the bandgap at EC – 0.65 eV, responsible for the bulk current generation and the electric field distribution, respectively. With  the adjusted characteristics of the defects, I-V characteristics in the fluence range (1‒4)×109 cm-2 demonstrated a quantitative agreement with the experimental curves and a strict proportionality of the maximum current to the  fluence. The electric field evolution with ion fluence was calculated and discussed as information complementary to the I-V data.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.171</doi>
          <udk>539.1.074.55</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>defects</keyword>
            <keyword>silicon detectors</keyword>
            <keyword>ion irradiation</keyword>
            <keyword>radiation hardness</keyword>
            <keyword>current simulation</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.71/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>422-427</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Emanuel Institute of Biochemical Physics, RAS</orgName>
              <surname>Nikolskaia </surname>
              <initials>Anna </initials>
              <email>anickolskaya@mail.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Emanuel Institute of Biochemical Physics, RAS</orgName>
              <surname>Kozlov</surname>
              <initials>Sergey</initials>
              <email>sergeykozlov1@gmail.com</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Emanuel Institute of Biochemical Physics, RAS</orgName>
              <surname>Alexeeva</surname>
              <initials>Olga</initials>
              <email>alexol@yandex.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Emanuel Institute of Biochemical Physics, RAS</orgName>
              <surname>Vildanova</surname>
              <initials>Marina</initials>
              <email>mvildanova@sky.chph.ras.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Emanuel Institute of Biochemical Physics, RAS</orgName>
              <surname>Karyagina</surname>
              <initials>Olga</initials>
              <email>olgakar07@mail.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>St. Petersburg Electrotechnical University "LETI"</orgName>
              <surname>Almjasheva</surname>
              <initials>Oksana</initials>
              <email>almjasheva@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Gusarov</surname>
              <initials>Victor</initials>
              <email>victor.v.gusarov@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="008">
            <individInfo lang="ENG">
              <orgName>Emanuel Institute of Biochemical Physics, RAS</orgName>
              <surname>Shevaleevskiy</surname>
              <initials>Oleg</initials>
              <email>shevale2006@yahoo.com</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">New inorganic materials for electron transport layers in perovskite solar cells</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Ternary complex oxides with cubic pyrochlore structure BixFeyWOq (BFWO) were obtained by hydrothermal synthesis at different pH values of hydrothermal fluid and were first used as electron transport layers in perovskite solar  cells (PSCs). The analysis of photovoltaic parameters measured for BFWO-based PSCs demonstrated that BFWO materials obtained at pH 2 allow improving the PSC performance by ~ 4% (rel.) in comparison with state-of-the-art PSCs. In addition, BFWO-based PSCs exhibited higher tolerance to the degradation under continuous illumination.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.172</doi>
          <udk>621.383.51</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>ternary complex oxides</keyword>
            <keyword>electron transport layer</keyword>
            <keyword>perovskite solar cells</keyword>
            <keyword>solar photovoltaics</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.72/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>428-432</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Filimonov</surname>
              <initials>Eugeniy</initials>
              <email>efilimonov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Levina </surname>
              <initials>Svetlana </initials>
              <email>levina@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <surname>Shvarts</surname>
              <initials>Maxim</initials>
              <email>Shvarts M.Z.</email>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Temperature effect on spectral irradiance blurring of solar radiation by Fresnel lens sunlight concentrators</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This work is devoted to the study of the effect of temperature on the spectral irradiance blurring (concentrated in the focal plane of a Fresnel lens) arising due to the inherent chromatic aberration (CA) of the lens. This paper  presents equipment for recording both irradiance distribution and spectral irradiance redistribution for the radiation concentrated by a small-sized energy concentrator adapted to temperature measurements, as well as the results of a study of Fresnel lenses.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.173</doi>
          <udk>62-932.2</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Fresnel lens</keyword>
            <keyword>chromatic aberration</keyword>
            <keyword>solar simulator</keyword>
            <keyword>photovoltaic concentrator</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.73/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>433-437</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Barinov </surname>
              <initials>Yury </initials>
              <email>yury@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Determination of discharge gas temperature with liquid non-metallic electrodes using the BOS method</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Gas temperature is an important parameter in the study of atmospheric pressure plasma objects. The paper shows the possibility of determining the gas temperature of a discharge with liquid electrodes using the Background  Oriented Schlieren (BOS) method. The discharge burns in an open air atmosphere between a liquid cathode and a metal anode. Tap water is used as the cathode, and a molybdenum rod is used as the anode. Based on the features of the BOS method and the geometry of the optical scheme, the main sources of errors are noted. The obtained temperatures are compared with the previously obtained results. It is shown that, taking into account the chosen  geometry of the optical scheme, the results are in good agreement.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.174</doi>
          <udk>533.9.08</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>background oriented schlieren</keyword>
            <keyword>schlieren method</keyword>
            <keyword>plasma diagnostics</keyword>
            <keyword>non-equilibrium air plasma</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.74/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>438-443</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Tuboltsev</surname>
              <initials>Yury</initials>
              <email>tuboltsev@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Chichagov</surname>
              <initials>Yury</initials>
              <email>Chichagov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Bogdanov</surname>
              <initials>Alexandr</initials>
              <email>alexander.a.bogdanov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Kantor </surname>
              <initials>Mikhail </initials>
              <email>m.kantor@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Sidorov</surname>
              <initials>Anton</initials>
              <email>sidorov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Shaping amplifier for soft X-ray spectrometer with a silicon drift detector</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The paper presents a shaping amplifier developed to boost the count rate of a soft X-ray spectrometer AMPTEK based on a fast silicon drift detector (SDD). The amplifier differentiates step-like signals from the charge sensitive  preamplifier of the SDD and gains the output signals for digitizing. The rise time of the output signals is reduced in regards with that of the AMPTEK shaping amplifier whereas the noise of these amplifiers is kept at the same level.  The shorter rise time allows better resolution of closely overlapped output pulses and reduces the pile-up effects at high input count rates. The design of the amplifier is presented in the paper as well as its tests for noise, linearity and resolution of close overlapped pulses.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.175</doi>
          <udk>539.1.08</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>shaping amplifier</keyword>
            <keyword>VGA</keyword>
            <keyword>PX-5</keyword>
            <keyword>SDD</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.75/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>444-449</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Popov </surname>
              <initials>Pavel </initials>
              <email>pavel.popov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Monakhov </surname>
              <initials>Nikolai </initials>
              <email>nikolay.monakhov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Analysis of thermal and thermoelectric processes in heat flux sensors based on layered metal structures</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The results of calculating the temperature and electric potential in the sensitive element of a heat flux sensor based on a layered metal structure of chromel-alumel and copper- nickel pairs in a stationary thermal regime using a two-dimensional and one-dimensional model are presented. The influence of the effective thermal conductivity of the structure on the temperature distribution and the generated thermoelectric power is shown. The possibility of using a  one-dimensional homogeneous model with effective properties for describing thermal and thermoelectric processes in the sensitive element of the sensor is considered.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.176</doi>
          <udk>536.629.7</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>layered metal structure</keyword>
            <keyword>heat flux sensor</keyword>
            <keyword>measurements</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.76/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>450-455</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Monakhov </surname>
              <initials>Nikolai </initials>
              <email>nikolay.monakhov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Sakharov</surname>
              <initials>Valerii</initials>
              <email>v.sakharov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Popov </surname>
              <initials>Pavel </initials>
              <email>pavel.popov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Heat flux measurements of high speed flow around an axisymmetric body using sensors based on anisotropic thermoelements</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The study is devoted to measurements of heat flux with an external high speed gas flow around the axisymmetric model. Sensors based on bismuth anisotropic thermoelements were used. Experiments were carried out using Big  Shock Tube. The models used for experiments were the combinations of a cone with an opening angle of 60 degrees and a cylinder. The models with heat flux sensors were placed in the outer section of the flat supersonic nozzle. The results were compared with theoretical estimates made using the effective length method. The data obtained demonstrate the applicability of sensors in gas-dynamic experiments with test times about 1 ms.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.177</doi>
          <udk>533.6.071.3</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>heat flux</keyword>
            <keyword>shock tube</keyword>
            <keyword>high speed flow</keyword>
            <keyword>heat flux sensor based on anisotropic thermoelements</keyword>
            <keyword>gradient heat flux sensor</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.77/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>456-462</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Bimberg Chinese-German Center for Green Photonics, Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences (CAS)</orgName>
              <surname>Tian</surname>
              <initials>Si-Cong</initials>
              <email>tiansicong@ciomp.ac.cn</email>
              <address>Changchun, China</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Bimberg Chinese-German Center for Green Photonics, Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences (CAS)</orgName>
              <surname>Han </surname>
              <initials>Saiyi</initials>
              <email>hansaiyi@163.com</email>
              <address>Changchun, China</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Sapunov</surname>
              <initials>Georgiy</initials>
              <email>sapunovgeorgiy@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <authorCodes>
              <orcid>0000-0002-0789-4241</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Alferov University</orgName>
              <surname>Egorov</surname>
              <initials>Anton</initials>
              <email>anton.egorov@connector-optics.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Center of Nanophotonics, Institute of Solid State Physics, Technische Universität Berlin, </orgName>
              <surname>Bimberg</surname>
              <initials>Dieter</initials>
              <email>bimberg@physik.tu-berlin.de</email>
              <address>Berlin, Germany</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Rochas </surname>
              <initials>Stanislav </initials>
              <email>stanislav_rochas@itmo.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Blokhin</surname>
              <initials>Sergei</initials>
              <email>blokh@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="008">
            <individInfo lang="ENG">
              <surname>Babichev</surname>
              <initials>Andrei</initials>
              <email>scientific.ocean@gmail.com.</email>
            </individInfo>
          </author>
          <author num="009">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Karachinsky</surname>
              <initials>Leonid</initials>
              <email>lkarachinsky@itmo.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="010">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Novikov</surname>
              <initials>Innokenty</initials>
              <email>innokenty.novikov@itmo.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="011">
            <authorCodes>
              <orcid>0000-0002-3449-8711</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Blokhin</surname>
              <initials>Aleksey</initials>
              <email>Aleksey.Blokhin@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="012">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Bobrov</surname>
              <initials>Mikhail</initials>
              <email>bobrov.mikh@gmail.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="013">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Maleev</surname>
              <initials>Nikolai</initials>
              <email>maleev@beam.ioffe.rssi.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="014">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Andryushkin</surname>
              <initials>Vladislav</initials>
              <email>vvandriushkin@itmo.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="015">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Bougrov</surname>
              <initials>Vladislav</initials>
              <email>Vladislav.bougrov@niuitmo.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="016">
            <authorCodes>
              <orcid>0000-0002-9448-2471</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Connector Optics LLC</orgName>
              <surname>Gladyshev</surname>
              <initials>Andrey</initials>
              <email>andrey.gladyshev@connector-optics.com</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="017">
            <individInfo lang="ENG">
              <surname>Melnichenko</surname>
              <initials>Ivan</initials>
              <email>imelnichenko@hse.ru</email>
            </individInfo>
          </author>
          <author num="018">
            <individInfo lang="ENG">
              <orgName>JSC OKB-Planeta</orgName>
              <surname>Voropaev</surname>
              <initials>Kirill</initials>
              <email>kirill.voropaev@novsu.ru</email>
              <address>V. Novgorod, Russian Federation</address>
            </individInfo>
          </author>
          <author num="019">
            <individInfo lang="ENG">
              <orgName>JSC OKB-Planeta</orgName>
              <surname>Zhumaeva</surname>
              <initials>Irina</initials>
              <email>zhumaevaio@okbplaneta.ru</email>
              <address>V. Novgorod, Russian Federation</address>
            </individInfo>
          </author>
          <author num="020">
            <individInfo lang="ENG">
              <orgName>Submicron Heterostructures for Microelectronics Research and Engineering Center, RAS</orgName>
              <surname>Ustinov</surname>
              <initials>Victor</initials>
              <email>info@ntcm-ras.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="021">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Li</surname>
              <initials>Hiu</initials>
              <email>lihui6526@qust.edu.cn</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">1550 nm high-speed VCSELS based on compressively strained In(Al)GaAs QWs</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">High-speed vertical-cavity surface-emitting lasers of 1550 nm spectral range based on ten compressively strained In(Al)GaAs QWs were fabricated by molecular-beam epitaxy and direct double wafer-fusion technique. The devices  demonstrate threshold current of 2 mA and maximum output optical power of 4.8 mW. The effect of saturable absorber was observed at a temperature above 50 °C. Small signal analysis revealed that modulation bandwidth f-3dB and the resonant frequency fR of 8 GHz and 12 GHz, respectively, can be reached for presented VCSELs design. The NRZ-mode data rate up to 20 Gbps at 20 °C across the distance of 1000 meters was demonstrated.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.178</doi>
          <udk>621.373.826</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>VCSEL</keyword>
            <keyword>molecular-beam epitaxy</keyword>
            <keyword>wafer fusion</keyword>
            <keyword>data transmission</keyword>
            <keyword>tunnel junction</keyword>
            <keyword>strained quantum wells</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.78/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>463-471</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Central Aerohydrodynamic Institute (TsAGI)</orgName>
              <surname>Mosharov</surname>
              <initials>Vladimir</initials>
              <email>vladimir.mosharov@tsagi.ru</email>
              <address>Zhukovsky, Moscow Region, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Central Aerohydrodynamic Institute (TsAGI)</orgName>
              <surname>Radchenko</surname>
              <initials>Vladimir</initials>
              <email>vlradchenko@yandex.ru</email>
              <address>Zhukovsky, Moscow Region, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Central Aerohydrodynamic Institute (TsAGI)</orgName>
              <surname>Senuev</surname>
              <initials>Ivan</initials>
              <email>senyuev_ivan@mail.ru</email>
              <address>Zhukovsky, Moscow Region, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Ishlinsky Institute for Problems in Mechanics RAS</orgName>
              <surname>Kotov </surname>
              <initials>Mikhail </initials>
              <email>kotov@ipmnet.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Application of temperature-sensitive paint with two channels for studying thermal processes in short duration gas dynamic facilities</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Specialists from TsAGI have developed a unique two-channel luminescent transducer, a temperature-sensitive paint that allows the measurement of full-field surface heat transfer rates in short-duration wind tunnels. The paper contains a description of the features of the method, its advantages, as well as a brief review of several main results obtained in the study of complex heat transfer structures under high gas flow velocities.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.179</doi>
          <udk>533.6.071.3</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>wind tunnel</keyword>
            <keyword>shock tube</keyword>
            <keyword>heat flux</keyword>
            <keyword>TSP</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.79/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>472-477</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ishlinsky Institute for Problems in Mechanics RAS</orgName>
              <surname>Kotov </surname>
              <initials>Mikhail </initials>
              <email>kotov@ipmnet.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ishlinsky Institute for Problems in Mechanics RAS</orgName>
              <surname>Solovyev</surname>
              <initials>Nikolay</initials>
              <email>lantan.ltd@mail.ru</email>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Institute on Laser and Information Technologies of RAS</orgName>
              <surname>Glebov</surname>
              <initials>Vladislav</initials>
              <email>jorik14@mail.ru</email>
              <address>Shatura, Moscow Region, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Institute on Laser and Information Technologies of RAS</orgName>
              <surname>Dubrova</surname>
              <initials>Galina</initials>
              <email>dgala@list.ru</email>
              <address>Shatura, Moscow Region, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Institute on Laser and Information Technologies of RAS</orgName>
              <surname>Malyutin</surname>
              <initials>Andrey</initials>
              <email>ammaliutin@rambler.ru</email>
              <address>Shatura, Moscow Region, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Pulse thermal load for thermoelectric detector calibration</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The work is devoted to the calibration of the developed thermoelectric detectors with different sensitive elements. A pulsed laser diode with a power of 5 W was used as a radiation source. A lamp with a tungsten filament was also  used to set the combined thermal load and assess the overall level of sensor sensitivity. The performed calibration procedures made it possible to obtain volt-watt characteristics for thermoelectric detectors of a new type, which will  help to better describe the thermal processes of high-intensity shock-wave interactions occurring in a pulsed gas-dynamic experiment.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.180</doi>
          <udk>533.6.071.3</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>heat flux</keyword>
            <keyword>shock tube</keyword>
            <keyword>laser heating</keyword>
            <keyword>calibration</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.80/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>478-483</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <surname>Shvarts</surname>
              <initials>Maxim</initials>
              <email>Shvarts M.Z.</email>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Malevskiy</surname>
              <initials>Dmitriy</initials>
              <email>dmalevsky@scell.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Nakhimovich</surname>
              <initials>Maria</initials>
              <email>nmar@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Pokrovskiy</surname>
              <initials>Pavel</initials>
              <email>P.Pokrovskiy@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Sadchikov</surname>
              <initials>Nikolai</initials>
              <email>N.A.Sadchikov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Soluyanov</surname>
              <initials>Andrey</initials>
              <email>pvtest@mail.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Estimation of optical diffuse properties of Fresnel lenses</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This paper proposes a method for determining the diffuse properties of sunlight concentrators such as Fresnel lens. The decrease in Fresnel lens concentrating ability is usually associated with imperfectness in optical refractive  surfaces, where some part of the direct light, which comes along the normal to the surface of the Fresnel lens and intended to be concentrated, is getting scattered and directing off a highly efficient concentrator solar cell. The diffuse light flux generated propagates inside the volume of the combined photovoltaic module. This flux undergoes multiple reflections from the structural elements, partially absorbed and ultimately reaches the photoconverters of  the planar circuit.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.181</doi>
          <udk>53.083.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Fresnel lens</keyword>
            <keyword>photoconverters</keyword>
            <keyword>diffuse light</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.81/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>484-490</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Kantor </surname>
              <initials>Mikhail </initials>
              <email>m.kantor@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Sidorov</surname>
              <initials>Anton</initials>
              <email>sidorov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Bogdanov</surname>
              <initials>Alexandr</initials>
              <email>alexander.a.bogdanov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Tuboltsev</surname>
              <initials>Yury</initials>
              <email>tuboltsev@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Chichagov</surname>
              <initials>Yury</initials>
              <email>Chichagov@mail.ioffe.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">A soft X-ray spectrometer with enhanced output count rate</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">An upgrade of an AMPTEK soft X-ray spectrometer with a silicon drift detector (SDD) to boost the output count rate is presented in the paper. Enhanced count rate is provided by a shaping electronic amplifier which forms pulses with  a short rise time from step-wise impulse responses of SDD charge sensitive preamplifier. The rise time of the amplifier pulses is about a half of that used in the AMPTEK amplifier. The output noise of the amplifier equals the noise of  the AMPTEK amplifier. The spectrometer is tested with the developed amplifier and amplifier in its digital pulse processing (DPP) unit and SDD radiated by an isotope 55Fe source. The results of the test are compared in terms of the  rise time and amplitudes of the response pulses as well as trapezoidal pulses at various peaking and flat top times. The developed amplifier is capable to provide the count rate of output pulses increased by a factor of 1.5 in regards  with the standard methods at the same energy resolution.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.182</doi>
          <udk>539.1.08, 539.1.074.9</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>soft X-ray spectrometers</keyword>
            <keyword>pulse counting</keyword>
            <keyword>amplitude spectra</keyword>
            <keyword>digital filters</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.82/</furl>
          <file/>
        </files>
      </article>
      <article>
        <artType>CNF</artType>
        <langPubl>RUS</langPubl>
        <pages>491-497</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Institute for Analytical Instrumentation RAS</orgName>
              <surname>Kuleshov </surname>
              <initials>Denis </initials>
              <email>hellchemist@yandex.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Institute for Analytical Instrumentation RAS</orgName>
              <surname>Solovieva</surname>
              <initials>Anna</initials>
              <email>ancka.solov@ya.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Gromov</surname>
              <initials>Ivan</initials>
              <email>gromov-24-2@yandex.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Pikovskoi</surname>
              <initials>Ilya</initials>
              <email>pikowskoy@yandex.ru</email>
              <address>St. Petersburg, Russian Federation</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Core Facility Center "Arctica", Northern (Arctic) Federal University</orgName>
              <surname>Ul'yanovskii</surname>
              <initials>Nikolay</initials>
              <email>uluanovskii_n@mail.ru</email>
              <address>Arkhangelsk, Russian Federation</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>Core Facility Center "Arctica", Northern (Arctic) Federal University</orgName>
              <surname>Belesov</surname>
              <initials>Artem</initials>
              <email>a.belesov@narfu.ru</email>
              <address>Arkhangelsk, Russian Federation</address>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <orgName>Core Facility Center "Arctica", Northern (Arctic) Federal University</orgName>
              <surname>Sypalov</surname>
              <initials>Sergey</initials>
              <email>sypych.one@yandex.ru</email>
              <address>Arkhangelsk, Russian Federation</address>
            </individInfo>
          </author>
          <author num="008">
            <individInfo lang="ENG">
              <orgName>Lomonosov Moscow State University</orgName>
              <surname>Mazur</surname>
              <initials>Dmitriy</initials>
              <address>Moscow, Russian Federation</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Application of a liquid electrode for collecting products of chemical reactions carried out in charged microdroplets of an electrospray torch</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The experimental device for carrying out chemical reactions in charged microdroplets with the accumulation of reaction products and reactants in a liquid electrode was developed. The fundamental possibility of electrospraying a  liquid onto the surface of a polar liquid (using acetonitrile as an example) in the modes of both positively and negatively charged microdroplets generation has been shown. In the mode of positively charged microdroplets generation,  acidified acetonitrile was used as a sprayed solution; in the mode of negatively charged microdroplets generation, pure acetonitrile was used. In both cases, a stable electrospray mode was obtained over a wide range of the spraying  voltage U (from 2.2 kV to 5 kV), the distance from the spraying capillary to the surface of the liquid electrode L (from 3 mm to 23 mm) and the sprayed solution feed rate Q (from 25 μl/min to 200 μl/min). It was shown on the example of the reaction of phenylhydrazine with anisic aldehyde that the products of reactions occurring in charged microdroplets, as well as the reactants, accumulate in the volume of the liquid electrode.</abstract>
        </abstracts>
        <codes>
          <doi>10.18721/JPM.161.183</doi>
          <udk>54.07</udk>
        </codes>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>charged microdroplets</keyword>
            <keyword>electrospray</keyword>
            <keyword>condensation reactions</keyword>
            <keyword>liquid electrode</keyword>
            <keyword>mass spectrometry</keyword>
            <keyword>high-performance liquid chromatography</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://physmath.spbstu.ru/article/2023.63.83/</furl>
          <file/>
        </files>
      </article>
    </articles>
  </issue>
</journal>
