2304-9782, 2618-8686, 2405-7223 15 3.3 2022 1-386

CNF RUS 8-12 Smirnova Maria masha_19957@mail.ru Bachurin Vladimir vibachurin@mail.ru Churilov Anatoly abchurilov@mail.ru Influence of the initial surface state on the ripple formation induced by O2+ sputtering of Si Influence of the initial Si surface state on the rate of ripple nucleation under bombardment with low-energy O2+ ions was investigated. It was found that the creation of a defect area in the Si near-surface layer or the creation of the initial surface relief by ion bombardment with a focused Ga+ ion beam facilitates a significant acceleration of the ripple nucleation on the Si surface during subsequent irradiation with an O2+ ion beam. 10.18721/JPM.153.301 537.534 ripple formation sputtering nanostructuring silicon ion beam https://physmath.spbstu.ru/article/2022.60.1/

CNF RUS 13-17 Belov Yaroslav yadbelov@gmail.com Zimin Sergey zimin@uniyar.ac.ru Amirov Ildar ildamirov@yandex.ru Naumov Viktor vvnau@ramber.ru Abramof Eduardo eduardo.abramof@inpe.br Rappl Paulo paulo.rappl@inpe.br Formation of Pb-Sn Janus particles on the surface of lead-tin telluride films during ion-plasma sputtering The formation of Janus-like particles of Pb-Sn during ion-plasma treatment of the surface of lead-tin telluride films was found. Pb0.6Sn0.4Te films 2 μm thick were grown on (111) BaF2 substrates by molecular beam epitaxy. The ion-plasma treatment of the samples was carried out in a high-density low-pressure radio frequency inductively coupled plasma at an ion energy of 75 eV and 25 eV. The duration of the sputtering process was 240 s. The evolution of the film surface morphology and the formation of Pb-Sn Janus particles with nano- and submicron sizes have been studied. 10.18721/ JPM.153.302 538.971 lead-tin telluride Janus particles ion-plasma treatment ion energy https://physmath.spbstu.ru/article/2022.60.2/

CNF RUS 18-21 Rakhmanova Gulnaz gulnaz.rahmanova@metalab.ifmo.ru Sedov Denis denis.sedov@metalab.ifmo.ru ITMO University Iorsh Ivan i.iorsh@metalab.ifmo.ru

St. Petersburg, Russian Federation

Transport and optical phenomena in two-dimensional Dirac semimetals The discovery of graphene with Dirac cones at the Fermi energy attracted intense interest in the field of two-dimensional materials. However, in many two-dimensional materials, including graphene, Dirac points are gapped by spin-orbit coupling. Here we consider two-dimensional Dirac semimetals which have Dirac-like band dispersion in the presence of spin-orbit coupling protected by nonsymmorphic lattice symmetry. This is of interest because it opens a richer spectrum of optical properties than other topological materials. We choose the model of nonsymmorphic Dirac semimetal α-bismuthine containing anisotropic Dirac cones. We calculated interband and intra-band linear optical conductivity within the formalism based on the density matrix approach and Kubo formula. We show that electronic state in conductance band supports plasmons with quasi-linear anisotropic dispersion. The difference in the interband absorption spectrum can only be observed for electronic states on the Femi surface and a width equal to the plasmon energy. The results suggest that such Dirac semimetals can be promising material for studying  nonlinear optical properties. 10.18721/JPM.153.303 535.015 Dirac semimetal plasmon conductivity linear response https://physmath.spbstu.ru/article/2022.60.3/

CNF RUS 22-26 Seraya Olesya seraia.ov@phystech.edu Moscow Institute of Physics and Technology (National Research University) Lizunova Anna anna.lizunova@gmail.com

Dolgoprudny, Moscow region, Russian Federation

Khabarov Kirill kirill.khabarov@phystech.edu Nouraldeen Messan messannouraldeen@phystech.edu Ivanov Victor ivanov.vv@mipt.ru In-flow laser modification of silver nanoparticles synthesized by spark discharge Silver nanoparticles have unique optical properties due to surface plasmon resonance, so they are widely used in various fields of science and technology. The synthesis of aerosol nanoparticles using a spark discharge allows to  obtain submicron fractal agglomerated nanoparticles. For future application there is a need to develop new methods to produce nanoparticles with different shapes and sizes to control their optical properties. The article was devoted  to the study of the processes of interaction of nanosecond laser radiation of different power (0.230 and 460 MW) and wavelength (527 and 1054 nm) with the flow of aerosol agglomerates of silver nanoparticles (10-400 ml/min)  synthesized in a spark discharge, and the assessment of the effect of pulsed radiation power on the morphology of silver nanoparticles. It was shown that best modification of silver nanoparticles to spherical shape was formed at the maximum laser radiation power of the wavelength of 527 nm, close to the plasmon resonance peak for silver. 10.18721/JPM.153.304 544.032.65 nanoparticles silver spark discharge laser radiation modification plasmon resonance https://physmath.spbstu.ru/article/2022.60.4/

CNF RUS 27-30 Rybin Vladislav vlad_rib@mail.ru Solovyev Alexander shurken@mail.ru Zuev Alexander cccu.73@gmail.com Thermal and mechanical properties of a metal-matrix composite with ceramic inclusions Metal-matrix composite was a blend of fine aluminum powder serving as a matrix while neodymium or aluminium oxide with 10% of volume ratio as a ceramic inclusion. Samples of the cylinder shape were manufactured used powder metallurgy method. All samples dimensions were 12.7 mm in diameter and 4 mm in height. The aim of this study was to measure the microhardness, density, porosity and thermal conductivity of the material, as well as its SEM analysis. The metallographic analysis of the composite showed a uniform distribution of ceramic inclusions with an average size of 0.8–1.2 mm and a high porosity of 5.3–5.5% in volume. The research results of the properties of aluminum composites with various oxide inclusions were compared. Their thermal properties differ significantly, while the mechanical properties vary within the same limits. The obtained values are determined by the structure of composite and its production technology. They can be used to predict of the material behavior under external influences. 10.18721/JPM.153.305 52-334 aluminium matrix composite aluminium oxide neodymium oxide thermal conductivity microhardness https://physmath.spbstu.ru/article/2022.60.5/

CNF RUS 31-35 Reznik Rodion moment92@mail.ru Gridchin Vladislav gridchinvo@gmail.com Kotlyar Konstantin konstantin21kt@gmail.com Ubyivovk Evgeny ubyivovk@gmail.com Dragunova Anna anndra@list.ru Kryzhanovskaya Natalia V. Natalia nkryzhanovskaya@hse.ru Cirlin George george.cirlin@mail.ru Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures In this work, we have studied the physical properties of InGaAs quantum dots (QDs) in AlGaAs nanowires (NWs) synthesized on silicon at different temperatures. The results of the studies have shown that, a decrease in the growth temperature leads to an increase in the mole fraction of indium in the InGaAs QD solid solution. In this case, the number of defects in QDs increases significantly due to an increase in the mismatch in the crystal lattices parameters of NWs and QDs. 10.18721/JPM.153.306 538. 975 III-V compounds silicon nanowires quantum dots molecular beam epitaxy https://physmath.spbstu.ru/article/2022.60.6/

CNF RUS 36-41 Shandyba Nikita shandyba.nikita@gmail.com Kirichenko Danil dankir@sfedu.ru Chernenko Natalia nchernenko@sfedu.ru Eremenko Mikhail eryomenko@sfedu.ru Balakirev Sergey sbalakirev@sfedu.ru Solodovnik Maxim solodovnikms@sfedu.ru Effect of FIB-modification of Si(111) surface on GaAs nanowire growth The paper presents the results of experimental studies of GaAs nanowire growth on Si(111) substrate with Ga focused ion beam modified areas with different treatment doses. We observed a significant difference between the  parameters of nanowires arrays formed on modified and unmodified areas. It is shown that changing the dose of Ga ions from 52 fC/µm2 to 1×104 fC/µm2 allows to form nanowire arrays with a different set of parameters in a single technological cycle with a high selectivity. The possibility of regulating of the NW length in the range of 1–6 µm, the density in the range of 0–7.8 µm-2, the diameter in the range of 28–95 nm and the normally oriented NWs in the range of 5–70 % by focused ion beam have been experimentally demonstrated. The change of modes and mechanisms of the catalytic centers formation and the initial stage of GaAs NWs growth were revealed. 10.18721/JPM.153.307 538.975 nanowires gallium arsenide focused ion beam molecular beam epitaxy silicon https://physmath.spbstu.ru/article/2022.60.7/

CNF RUS 42-47 Balakirev Sergey sbalakirev@sfedu.ru Kirichenko Danil dankir@sfedu.ru Chernenko Natalia nchernenko@sfedu.ru Shandyba Nikita shandyba.nikita@gmail.com Eremenko Mikhail eryomenko@sfedu.ru Solodovnik Maxim solodovnikms@sfedu.ru Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density In this paper, we demonstrate a novel technique enabling fabrication of smallsized InAs/GaAs quantum dots with a very low surface density during droplet epitaxy. In contrast to the traditional two-stage approach, we introduce an additional stage of exposure to the ultra-low arsenic flux which enables partial diffusion decay of droplets with a large initial size. While exposure of droplets to large arsenic fluxes leads to their transformation into rings, disks and holes, exposure to the ultra-low flux makes it possible to reduce the volume of droplets maintaining their initial surface density. At the following stages of crystallization and annealing, In droplets are converted into InAs quantum dots with an average diameter below 30 nm and a surface density below 108 cm-2. The standard deviation of quantum dot diameters is found to be less than 5%. Furthermore, we demonstrate that the growth procedure is well-reproducible, which makes it a promising method of quantum dot fabrication for advanced nanophotonic devices. 10.18721/JPM.153.308 538.9 droplet epitaxy InAs/GaAs nanostructures quantum dots https://physmath.spbstu.ru/article/2022.60.8/

CNF RUS 48-53 Chernenko Natalia nchernenko@sfedu.ru Kirichenko Danil dankir@sfedu.ru Shandyba Nikita shandyba.nikita@gmail.com Balakirev Sergey sbalakirev@sfedu.ru Eremenko Mikhail eryomenko@sfedu.ru Solodovnik Maxim solodovnikms@sfedu.ru Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface In this work, we study of the effect of focused ion beam (FIB) and pre-growth treatment based on local droplet etching (LDE) techniques combination on the regular nanohole array formation on GaAs (001) surface, which can act as template for selective quantum dot formation in future. The results of the influence of the regimes of method combination on the nanohole shape and size are presented. Based on the analysis of Raman spectra, we have shown that the use of LDE-based technique makes it possible to almost restore the crystal structure of FIB-modified regions completely. The possibility of obtaining highly symmetrical, faceted by {101} and {011} planes nanoholes of various diameters and depths in selected surface points in one technological cycle is shown. 10.18721/JPM.153.309 538.9 focused ion beam quantum dots GaAs molecular beam epitaxy nanopatterning local droplet etching https://physmath.spbstu.ru/article/2022.60.9/

CNF RUS 54-58 Eremenko Mikhail eryomenko@sfedu.ru Balakirev Sergey sbalakirev@sfedu.ru Chernenko Natalia nchernenko@sfedu.ru Shandyba Nikita shandyba.nikita@gmail.com Solodovnik Maxim solodovnikms@sfedu.ru Southern Federal University Ageev Oleg ageev@sfedu.ru

Taganrog, Russian Federation

Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si In this work, we studied the effect of the pregrowth annealing temperature on the epitaxial growth of GaAs on modified Si area. It is shown that an increase in the annealing temperature leads to a decrease in the selectivity of GaAs epitaxial growth, as well as to a transition from two-dimensional like growth to the growth of nanowires. At an accelerating voltage of 10 kV, 5 passes of the focused ion beam, and an annealing temperature of 600 °C, no epitaxial growth was observed on the modified areas. An increase in the accelerating voltage of the focused ion beam to 20 kV led to the onset of the formation of GaAs nanostructures at low values of the number of passes. An increase in the annealing temperature to 800 °C with the subsequent growth of GaAs leads to the activation of parasitic growth outside the modification regions over the entire range of accelerating voltages and the number of processing passes of the focused ion beam. 10.18721/JPM.153.310 538.9 silicon gallium arsenide molecular beam epitaxy annealing scanning electron microscopy focused ion beam https://physmath.spbstu.ru/article/2022.60.10/

CNF RUS 59-63 Nikitina Larisa larnikitina@sfedu.ru Lakhina Ekaterina lakhina@sfedu.ru Eremenko Mikhail eryomenko@sfedu.ru Balakirev Sergey sbalakirev@sfedu.ru Chernenko Natalia nchernenko@sfedu.ru Shandyba Nikita shandyba.nikita@gmail.com Solodovnik Maxim solodovnikms@sfedu.ru Southern Federal University Ageev Oleg ageev@sfedu.ru

Taganrog, Russian Federation

Study of FIB-modified silicon areas by AFM and Raman spectroscopy This paper presents the results of atomic force microscopy and Raman spectroscopy studies of the effect of high-temperature annealing on the height/depth parameters of silicon areas modified by a focused ion beam. It is shown that the focused ion beam treatment with 5 beam passes leads to swelling of the surface of the modified silicon areas. It was found that the depth of the focused ion beam modified area is different after annealing at 600 and 800 °C. An increase in the number of passes in both cases led to an increase in the depth of the focused ion beam modified areas. The results of studies of Raman spectroscopy showed that with an increase in the number of passes, a decrease in the crystallinity of silicon occurs. It is also shown that annealing of such regions leads to the restoration of crystallinity upon annealing at 600 °C and almost complete restoration of crystallinity at 800 °C. 10.18721/JPM.153.311 538.9 silicon A3B5 molecular beam epitaxy annealing atomic force microscopy focused ion beam Raman spectroscopy https://physmath.spbstu.ru/article/2022.60.11/

CNF RUS 64-69 Lomakin Andrey andrey.lomakin.2021@mail.ru Baeva Elmira M. baeva.elm@gmail.com Titova Nadezhda titovana@mail.ru Zolotov Philip I. zolotov@scontel.ru Kolbatova Anna anna_kardakova@mail.ru Goltsman Grigory goltsman@rplab.ru Electron phase-breaking time in ultra-thin Nb films Abstract. Here we study the temperature dependences of the electron phase-breaking time τϕ in ultra-thin superconducting niobium (Nb) films. In Nb films, passivated with a layer of silicon (Si), the observed temperature dependence of the phase-breaking time is τϕ ~ Т-2.5, is resembling the electron-phonon scattering. However, in the uncovered Nb films, we observe the saturation of τϕ at low temperatures, which may be a signature of the surface magnetic disorder, present in native Nb oxide on the film surface. 10.18721/JPM.153.312 537.9 magnetoresistance thin films inelastic scattering magnetic disorder https://physmath.spbstu.ru/article/2022.60.12/

CNF RUS 70-75 Shamin Evgeniy yevgeniy.shamin@phystech.edu Sharapov Andrey andrey.sharapov@phystech.edu Skuratov Ilya ilya.skuratov@phystech.edu Demidov Stanislav swrs.rg@gmail.com Gornev Evgeniy egornev@niime.ru Sidewall roughness model for optical losses calculation in photonic integrated circuits One of the key performance indicators of photonic circuits is the value of optical propagation losses. Among several factors which impact these losses, the sidewall roughness is considered as the primary focus of this work. The optical signal, propagating along the photonic device, scatters on roughness of its element’s surfaces. This decreases the output power, as well as leads to the higher heating and worse transmission characteristics, which in its turn increases the noise ratio and creates undesired phase deviations. Thus, the problem of sidewall roughness simulation (and consequently, losses estimation in microwave photonic circuits caused by it) is relevant at the design stage of the devices. Therefore, a new, highly efficient model of sidewall roughness based on a photolithography simulation and imitational modelling of photoresist exposure is presented. Principles of operation and implementation features of the model are described. Simulation results, obtained using the new roughness model, are demonstrated and an approach on their verification with experimental data is suggested. Additionally, theoretical estimations for the optical losses caused by sidewall roughness in ridge Si waveguides are discussed. 10.18721/JPM.153.313 539.2 sidewall roughness photolithography modeling random close packing photoresist exposure modeling integral photonics optical losses https://physmath.spbstu.ru/article/2022.60.13/

CNF RUS 76-81 0000-0001-7499-0578 Institute of High Current Electronics, Siberian Branch of RAS Kozhevnikov Vasily Vasily.Y.Kozhevnikov@ieee.org Kozyrev Andrey kozyrev@to.hcei.tsc.ru Kokovin Aleksandr alexander.kokovin.desch@gmail.com Semeniuk Natalia viliiskoeozero@yandex.ru The kinetic simulation in vacuum electronics: uncovering the fundamental nature of non-Maxwellian distribution function effects This paper presents main theoretical results obtained in vacuum explosive-emission electronics by using of the numerical methods aimed to the direct solution of Vlasov Poisson kinetic equations. It was shown that computational physical kinetics makes it possible to explain a number of important physical laws occurring in vacuum diodes unlike widely used Particle-in-Cell or hydrodynamic simulation. The kinetic approach makes it possible to take into account nonequilibrium non-Maxwellian effects mainly associated with the “tails” of distribution functions. The advantages of kinetic simulation are shown on two highly relevant problems of vacuum electronics are considered in details. 10.18721/JPM.153.314 533.9.02 vacuum electronics physical kinetics numerical simulation https://physmath.spbstu.ru/article/2022.60.14/

CNF RUS 82-85 Tishin Pavel tishin.pavel1999@gmail.com Shishkina Daria daria.lizunkova@yandex.ru Shishkin Ivan shishkinivan9@gmail.com Poluektova Natalia natapolivekt37@gmail.com Latukhina Natalia natalat@yandex.ru Investigation of degradation characteristics of photosensitive structures with porous silicon In this paper, the effect of porous silicon on the characteristics of photosensitive structures in open space is investigated. For this purpose, photovoltaic converters based on polished silicon of various configurations were created: a sample with a porous layer and a coating of zinc sulfide; a sample without a porous layer with a coating of zinc sulfide and a sample with a porous layer and a combined coating of zinc sulfide and dysprosium fluoride. The porous layer is less susceptible to environmental factors harmful to solar cells that reduce their service life, in particular, cosmic radiation. Also, porous surface contributes to higher electrical and optical properties of solar cells. And the antireflection coatings of zinc sulfide and dysprosium fluoride can reduce the number of recombination centers and increase light absorption, which also has a positive effect on the characteristics of structures. The results of the study of volt-ampere characteristics of silicon photosensitive devices are presented. An increase in the radiation resistance of structures using porous silicon is shown. 10.18721/JPM153.315 004.942 photosensitive structures porous silicon radiation resistance https://physmath.spbstu.ru/article/2022.60.15/

CNF RUS 86-90 Nizameeva Guliya guliya.riv@gmail.com Gainullin Radis radisgainullin@gmail.com Kadirov Marsil kamaka59@gmail.com Cetyltrimethylammonium bromide as a soft template for the synthesis of a conductometric gas sensor active substance This paper presents the investigation of cetyltrimethylammonium bromide (CTAB) molecules self-organization at the glass substrate, which is used as a micellar template in the synthesis of metal nanonetworks. These nanonetworks can be used as an active substance of gas sensors for detection of toxic gases. The free surface energy of glass which is used in the work as a substrate, and the free energy of the glass-CTAB interface are calculated. 10.18721/JPM153.316 544.723 micellar template metal nanonetworks gas sensors cetyltrimethylammonium bromide surface energy atomic force microscopy https://physmath.spbstu.ru/article/2022.60.16/

CNF RUS 93-96 Bogdanova Milana bogdanovamilanav@gmail.com 0000-0002-0061-6687 Alferov University Uvarov Alexander lumenlight@mail.ru 0000-0002-7632-3194 Alferov University Gudovskikh Alexander gudovskikh@spbau.ru Optimization of the contact grid for the GaP/Si solar cells In this paper, the calculation of electrical properties for (n)GaP–p(Si) solar cells was performed for different contact grid design. The influence of annealing temperature on the current-voltage curves of solar cells was shown via the Hall measurements and the simulation respectively. For calculations 20 μm and 200 μm width contact bars were used. First group corresponds to lithography. The second one could be appropriate for mass-scalable screen-printing metallization technique. The distance between contacts was varied in the range from 50 μm to 4000 μm in case for 20 μm contact width and in the range from 200 μm to 4000 μm in case for 200 μm contact width. According to the results of calculation, the thermal annealing at 600–700 ˚C is optimal for 20 μm configuration of contact grid. The predicted conversion efficiency is approximately 21.5%. Relative to contact grid with 200 μm width of bars, the optimal annealing temperature is 700 ˚C. These conditions lead to 19% conversion efficiency. 10.18721/JPM153.317 538.91 solar cells heterojunction GaP/Si screen-printing contact grid https://physmath.spbstu.ru/article/2022.60.17/

CNF RUS 97-100 Fattakhov Ilya 33ychenikan@mail.ru Trushin Oleg otrushin@gmail.com Popov Aleksandr aapopov@mail.ru Mazaletsky Leonid boolvinkl@ya.ru Growth of nanostructured cobalt thin film at oblique angle deposition Nanocolumnar Co thin films growth by oblique angle deposition on Si substrate is experimentally studied. Formation of regular arrays of vertical Co nanocolumns has been observed at incidence angles more than 80 degrees with rotation of substrate. Such films might be perspective material for applications as a magnetic recording media for next generations of hard disks. 10.18721/JPM.153.318 29.19.22 Co thin films nanocolumns oblique angle deposition https://physmath.spbstu.ru/article/2022.60.18/

CNF RUS 101-104 Dronova Maria mariadv277@gmail.com Mendeleev Russian University of Chemistry and Technology Danilov Egor danilovegor1@gmail.com

Moscow, Russian Federation

Veretennikov Mikhail MiklVeretennikov@gmal.com Electrical conductivity and optical properties of water-based graphene/AgNWs hybrid inks for flexible electronics The present study provides the description of water-based inks made of hybrid graphene-silver nanoparticles conductive fillers in a wide concentration range for printed electronics applications. Aqueous graphene suspensions were manufactured via ultrasonic exfoliation of pristine graphite, whereas polyol synthesis was used to obtain silver nanowires. Hybrid suspensions were centrifuged to improve transmittance while retaining electrical conductivity. As a result, we successfully manufactured conductive transparent films with transmittance up to 96%. 10.18721/JPM.153.319 661.666.2; 544.774.3 conductive ink graphene silver nanowires flexible electronics https://physmath.spbstu.ru/article/2022.60.19/

CNF RUS 106-110 Troshkina Natalia natik.faier@gmail.com Novikova Sagila ibragimova21@yandex.ru Nasirov Pavel CHemBioslne@gmail.com Volobueva Margarita gutairlesson@gmail.com Mukhina Irina musha08_@mail.ru Popova Anna anpopova@gmail.com Gribova Elena elena_g67@mail.ru Investigation of the optical properties of quantum dots depending on the nature and number of additional semiconductor layers The present study aims to investigate the properties of quantum dots (QDs) depending on the nature and number of additional semiconductor layers. The analysis of spectral data showed that when CdTe QDs are coated with a ZnS shell, a bathochromic shift of the exciton peak and maximum of fluorescence is observed due to the restriction of charge carriers in the nucleus. However, the build-up of the additional shell leads to a decrease in the quantum yield, which may be due to the difference in the parameters of the crystal lattices to CdS and ZnS and the occurrence of defects in the crystal structure. In contrast, CdTe QDs coated with a CdS shell increased the quantum yield and shifted the peak of fluorescence to a longer wavelength region. 10.18721/JPM.153.320 544.77, 541.64 quantum dots nanoparticles bandgap synthesis core shell https://physmath.spbstu.ru/article/2022.60.20/

CNF RUS 111-117 Shipovskaya Anna Shipovskayaab@yandex.ru Gegel Natalia gegelno@yandex.ru Babicheva Tatyana tatyana.babicheva.1993@mail.ru Comparative analysis of nanosized structures in thin hydrogel plates of chitosan L- and D-ascorbate–hydrochloride Transmission electron microscopy and small-angle X-ray scattering were used to explore the supramolecular structure of thin hydrogel plates of chitosan L- and D-ascorbate– hydrochloride. The objects reveal dendritic formations and structures of fractal dimension at the macrolevel and nanolevel of organization of polymeric substance, respectively. A comparative analysis of the morphology and average size of phase inhomogeneities and their bulk distribution in the material depending on the ascorbic acid isomer (L or D) was carried out. 10.18721/JPM.153.321 547.458.1:[539.25+539.26] L- (D-) chitosan ascorbate hydrochloride hydrogel plates transmission electron microscopy small-angle X-ray scattering https://physmath.spbstu.ru/article/2022.60.21/

CNF RUS 118-122 Asharchuk Ilya ilyaasharchuk@gmail.com Vovk Nikolay vovkolg2011@gmail.com Sokolov Viktor visokol@rambler.ru Goryachuk Ivan ivolgor@yandex.ru Minaev Nikita minaevn@gmail.com Tarkhov Michael tmafuz@mail.ru Upсonversion luminescence particles based on NaYF4 matched with passive optical devices The work is aimed at creating matching passive elements with optical planar devices. A three-dimensional structure-interface was made to match the position of the center of the optical fiber with active optical elements. NaYF4  microparticles doped with rare-earth ions Yb3+, Tm3+, Er3+ with a diameter of 2.2 µm and 1.65 um were synthesized. The formation of hemispherical lenses with radii from 0.75 to 25 um has been demonstrated for optical matching with optical fiber by IR (infrared) photopolymerization. 10.18721/JPM153.322 53.08 upconversion two-photon polymerysation rare-earths https://physmath.spbstu.ru/article/2022.60.22/

CNF RUS 123-127 0000-0002-3503-7458 St. Petersburg Electrotechnical University "LETI" Maksimova Alina A. deer.blackgreen@yandex.ru 0000-0002-0061-6687 Alferov University Uvarov Alexander lumenlight@mail.ru 0000-0002-1571-209X ITMO University Kirilenko Demid demid.kirilenko@mail.ioffe.ru

St. Petersburg, Russian Federation

0000-0002-4894-6503 Alferov University Baranov Artem I. baranov_art@spbau.ru

St. Petersburg, Russian Federation

0000-0001-6869-1213 Alferov University Vyacheslavova Ekaterina cate.viacheslavova@yandex.ru 0000-0002-7632-3194 Alferov University Gudovskikh Alexander gudovskikh@spbau.ru Plasma deposited indium phosphide and its electrophysical properties In this article, indium phosphide (InP) layers were grown using the method of plasma-chemical atomic layer deposition on crystalline silicon substrates for the first time. Trimethyllindium (TMI) was used as a source of indium, and phosphine (PH3) was used as a source of phosphorus. Properties of InP layers were evaluated, such as structural properties, electrical conductivity, type of conductivity and carrier concentration to integrate them into a c-Si-based solar cell. Root-Mean-Square (RMS) roughness measurements showed that the use of intermediate annealing in Ar plasma after the stage of deposition of a phosphorus monolayer leads to a significant decrease in roughness to the level of fractions of nanometers. The composition of the InP layers according to the energy dispersive X-ray spectroscopy (EDX) was close to stoichiometric. The measurements of dark IV characteristics showed that the InP layer has a donor type of conductivity. I–V characteristics of InP/p-Si structure under solar spectrum illumination, show open circuit voltage of Voc = 0.48 V. Van der Pauw measurements demonstrate high concentration of carriers and their high mobility. Thus, the possibility of using InP-based layers for solar cells was shown. 10.18721/JPM.153.323 621.315.592 silicon solar cells indium phosphide plasma enhanced chemical vapor deposition atomic layer deposition https://physmath.spbstu.ru/article/2022.60.23/

CNF RUS 128-133 Listyukhin Vladislav Vladyan4iklist@yandex.ru Pecherskaya Ekaterina pea1@list.ru Penza State University Golubkov Pavel golpavpnz@yandex.ru

Penza, Russian Federation

Aleksandrov Vladimir vsalexrus@gmail.com Shepeleva Anastasia eduard.shepelev.67@mail.ru Monitoring of overhead power lines in real time Based on the application of quality control methods, an analysis of the technological disturbances (accidents) causes on overhead power lines with a voltage in the range from 0.4 to 110 kV AC was made. The main causes of accidents on overhead lines were systematized. The need to control the operational parameters of overhead lines that affect the sustainable functioning of electric power systems has been proved. The structure of the information-measuring system for monitoring the overhead lines parameters has been developed. The purpose of its implementation is to ensure a reliable power supply to consumers, improve the level of operational and technological control of networks and reduce the economic costs of eliminating the consequences of accidents in electrical networks. 10.18721/JPM.153.324 681.2 overhead power lines electric power systems accelerometer information-measuring systems automation digitalization monitoring parameter control reliability https://physmath.spbstu.ru/article/2022.60.24/

CNF RUS 134-137 Egorkin Vladimir egorkinvi1962@mail.ru Zemlyakov Valery vzml@rambler.ru Zaitsev Aleksei ziko27@yandex.ru Chukanova Olga Kukhtuaeva@mail.ru GaN IC E-mode p-channel and n-channel transistors simulation This article demonstrates TCAD simulation of normally-off p-channel and n-channel transistors based on a p-GaN gate power platform and estimates interconnections between the key parameters of the heterostructure and device behavior, in other words the type of transistor. GaN platform with p-GaN layer has been developed. It will allow to form n-channel and p-channel, normally-on and normally-off transistors on the same wafer in the same technological cycle and to create GaN complementary pair. 10.18721/JPM.153.325 621.382.323 GaN high electron mobility transistor normally-off transistor complementary pair integrated circuit https://physmath.spbstu.ru/article/2022.60.25/

CNF RUS 138-141 Vovk Nikolay vovkolg2011@gmail.com Asharchuk Ilya ilyaasharchuk@gmail.com Timofeeva Ekaterina timofeeva.e@inme-ras.ru Filippov Ivan ivn.filippov@gmail.com Zenova Elena zenova.e@inme-ras.ru Smirnov Konstantin skv2050@mail.ru Tarkhov Michael tmafuz@mail.ru Development of technological methods for fabrication high-density luminescent structures based on up-conversion NaYF4:Yb3+, Er3+ particles In this paper, we present a technological method for creating high-density luminescent structures based on up-conversion NaYF4:Yb3+, Er3+ particles and experimentally demonstrate the possibility of their creation. This technology is applicable for large-scale fabrication of patterned media with a level of filling with microparticles of more than 96% for the fabrication of planar structures applicable in photonics and optoelectronics. 10.18721/JPM.153.326 53 up-conversion luminescence microparticles https://physmath.spbstu.ru/article/2022.60.26/

CNF RUS 142-146 Ivanov Anton a-e-ivano-v@yandex.ru Submicron Heterostructures for Microelectronics Research and Engineering Center of the RAS Aladov Andrei

Russia, 194021, St.Petersburg, Polytechnicheskaya, 26

Submicron Heterostructures for Microelectronics Research and Engineering Center of the RAS Chernyakov Anton chernyakov.anton@yandex.ru

Russia, 194021, St.Petersburg, Polytechnicheskaya, 26

Submicron Heterostructures for Microelectronics Research and Engineering Center of the RAS Zakgeim Alexander zakgeim@mail.ioffe.ru

Russia, 194021, St.Petersburg, Polytechnicheskaya, 26

A comprehensive study of electroluminescence and temperature distribution of “UX:3” AlInGaN LED Comprehensive analysis of current spreading, temperature distribution and nearfield electroluminescence of high-power “UX:3” AlInGaN emitting chips with a distributed system of reflective contacts, located on the back of the chip, has been performed by combination of different experimental methods. Current dependences of power and spectral characteristics, including their distribution (mapping) over the emitting surface, were studied in a wide range of operating currents. A thermal resistance evaluation was based on transient electrical processes under heating by direct current and analysis of thermal equivalent circuit (the Cauer’s model). The high resolution mapping of  electroluminance and thermal radiation was obtained by optical microscope and infrared images technique. It has been established distribution pattern of light and temperature at different levels of excitation. The conclusions were drawn about the degree of uniformity of the current and light spreading and their influence on the power characteristics of devices. 10.18721/JPM.153.327 628.9.038 LED light and temperature mapping light-current characteristic external quantum efficiency https://physmath.spbstu.ru/article/2022.60.27/

CNF RUS 147-150 Kenesbay Ramazan ramazan.kenesbay.1999@gmail.com Enns Yakov ennsjb@gmail.com Kazakin Aleksey keha@newmail.ru Kleimanov Roman kleimanovrv@mail.ru Akulshin Yurie acul@mems.ru Low-induction integral heater for temperature control of MEMS vapor cell This paper describes a solution to the problem of temperature control and the occurrence of a magnetic field created by a resistive heater in a gas cell of an atomic clock. A low-induction integral heater was developed in the form of a two-layer metallization system that mutually compensates for each other's magnetic fields. Numerical simulation was carried out, based on the results of which a prototype of a low-induction integral heater was developed using precision photolithography and technologies for applying thin-film conductive and dielectric coatings. Static and dynamic tests of the fabricated integral heater were carried out. 10.18721/JPM.153.328 53 integral heater MEMS vapor cell https://physmath.spbstu.ru/article/2022.60.28/

CNF RUS 151-156 Struchkov Nikolai struchkov.nikolaj@gmail.com Kozlovskaya Ekaterina k89296190714@gmail.com Tsarik Konstantin tsarik_kostya@mail.ru Lashkov Andrey lav.lab-sm.sstu@rambler.ru Levin Denis vkn@miee.ru Romashkin Alexey romaleval@gmail.com On the mechanism of CNT network NH3 sensitivity: modeling and experimental study of the density effect A carbon nanotubes (CNT) network is a promising gas sensing material for “e-nose” development due to the vast methods of cross-sensitivity modification. However, the dominant sensitivity mechanism remains unclear since both the CNTs and junctions between CNTs can be gas-sensitive. In this paper to estimate the contributions of both mechanisms, we simulated CNT networks with varied densities using an equivalent electrical circuit. Density variation alters the junction’s and CNT’s contribution to the network resistance, and hence the total resistive response. We compared the results with the experimental resistive response of the spray-coated CNT networks toward ammonia (NH3). A decrease in the network density results in a higher response, which indicates a likely significant role of CNTs junctions in sensitivity of a sparse networks. We also studied the effect of formic acid treatment on CNT networks, which increases both conductivity and sensitivity by removing residual solvent. 10.18721/JPM.153.329 621.315.5:681.586.72 carbon nanotube gas sensor spray-coating electric circuit simulation https://physmath.spbstu.ru/article/2022.60.29/

CNF RUS 157-162 Alferov University Sinitskaya Olesya olesia-sova@mail.ru

St. Petersburg, Russian Federation

0000-0003-1835-1629 Alferov University Shubina Kseniia rein.raus.2010@gmail.com

St. Petersburg, Russian Federation

Mokhov Dmitry mokhov@spbau.ru 0000-0002-0061-6687 Alferov University Uvarov Alexander lumenlight@mail.ru Filatov Vladimir filatovbigfan@icloud.com Mizerov Andrey andreymizerov@rambler.ru Timoshnev Sergey timoshnev@mail.ru Nikitina Ekaterina mail.nikitina@mail.ru Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates In this work, the prototypes of visible-blind ultraviolet metal-semiconductor-metal photodetectors based on GaN epitaxial layers were implemented. For this purpose, ultrathin GaN epitaxial layers were synthesized by plasma assisted molecular beam epitaxy on sapphire substrates. The morphology and electrical properties of the obtained samples were studied. To form electric contacts with the Schottky barrier, an interdigitated electrode design with Ni/Au metallization was chosen and standard lift-off laser lithography procedure was used. It has been established that the formed photodetectors have the highest sensitivity to radiation with a wavelength of 350–360 nm. It was found that rapid thermal annealing of photodetector structures at a temperature of 500 °C made possible to reduce the dark current by a maximum of 30 times. In addition, it was shown that high temperature annealing led to the increase in Schottky barrier height and decrease in the ideality factor. Thus, it was confirmed that use rapid thermal annealing method can improve the characteristics of metal-semiconductor-metal visible-blind ultraviolet photodetectors based on GaN. 10.18721/JPM.153.330 621.383.526 GaN molecular beam epitaxy ultraviolet range photodetector metal-semiconductor- metal annealing https://physmath.spbstu.ru/article/2022.60.30/

CNF RUS 163-166 Dragunova Anna anndra@list.ru Kryzhanovskaya Natalia V. Natalia nkryzhanovskaya@hse.ru 0000-0003-3686-935X National Research University “Higher School of Economics” (St. Petersburg branch) Moiseev Eduard emoiseev@hse.ru Zubov Fedor fzubov@hse.ru Kalyuzhniy Nikolai nickk@mail.ioffe.ru Mintairov Sergei mintairov@scell.ioffe.ru Nadtochiy Alexey al.nadtochy@mail.ioffe.ru Guseva Yulia Guseva.Julia@mail.ioffe.ru Kulagina Marina M. Marina.Kulagina@mail.ioffe.ru 35379962200 Ioffe Physical Technical Institute of the Russian Academy of Sciences Zhukov Alexey zhukov@beam.ioffe.ru

Russia, 194021, St.Petersburg, Polytechnicheskaya 26

Analysis of characteristics of InGaAs/GaAs microdisk lasers bonded onto silicon board In this work we study characteristics of the III-V microdisk lasers bonded onto silicon board. The bonding of microdisk lasers to the silicon substrate reduces their thermal resistance. Here we show improvement in output power, lasing threshold, dynamic characteristics and energy consumption in microdisk lasers with diameters of 31 μm and 19 μm by comparison of the characteristics obtained before and after bonding. Also, estimation of energy-to-data ratio was performed at 13 °C and 20 °C for a 19 μm microdisk lasers after bonding. 10.18721/JPM.153.331 538.958 hybrid integration microlaser quantum well dots energy-to-data ratio thermal resistance https://physmath.spbstu.ru/article/2022.60.31/

CNF RUS 167-170 Fominykh Nikita A. nfominykh@hse.ru 0000-0003-3686-935X National Research University “Higher School of Economics” (St. Petersburg branch) Moiseev Eduard emoiseev@hse.ru National Research University ‘Higher School of Economics” Makhov Ivan imahov@hse.ru Min'kov Kirill k.n.minkov@yandex.ru Nadtochiy Alexey al.nadtochy@mail.ioffe.ru Guseva Yulia Guseva.Julia@mail.ioffe.ru Kulagina Marina M. Marina.Kulagina@mail.ioffe.ru Mintairov Sergei mintairov@scell.ioffe.ru Kalyuzhniy Nikolai nickk@mail.ioffe.ru Kryzhanovskaya Natalia V. Natalia nkryzhanovskaya@hse.ru 35379962200 Ioffe Physical Technical Institute of the Russian Academy of Sciences Zhukov Alexey zhukov@beam.ioffe.ru

Russia, 194021, St.Petersburg, Polytechnicheskaya 26

The investigation of optical coupling of microlasers with tapered fiber We present an investigation of optical coupling of injection microdisk and microring lasers with different diameters with a tapered fiber. We studied the dependences of the laser dominant mode intensity on the distance between the tapered fiber and the microlaser’s sidewall. For every studied laser a sharp intensity growth by 2–3 orders of magnitude was observed when the tapered fiber came in contact with the microlaser. We compared lasing spectra received by the tapered fiber and by the microobjective. Though the intensity of the electroluminescence signal received by the tapered fiber was lower than that coupled by the microobjective, the ratio of the dominant (lasing) mode intensity to spontaneous emission was noticeably higher for the case of the tapered fiber. 10.18721/JPM.153.332 535.015 quantum well-dots microlasers microdisk resonators tapered fiber whispering gallery modes https://physmath.spbstu.ru/article/2022.60.32/

CNF RUS 171-176 Astafiev Artyom astafiev.artyom@gmail.com Shakhov Aleksander physics2007@yandex.com Syrchina Maria wrongclue@gmail.com Shepel Denis denisshepel@yandex.ru Nadtochenko Victor nadtochenko@gmail.com Comparison of femtosecond laser, hydrothermal and microwave synthesis of fluorescent products from L-lysine Femtosecond laser synthesis of fluorescent products from essential amino acids in living cells and tissues can be exploited in fluorescent bioimaging. To gain insight into reaction mechanism and a role of thermal processes we  examine synthesis of fluorescent products from L-lysine by femtosecond laser irradiation, hydrothermal and microwave synthesis and perform comparative analysis of reaction products. Our results indicate that compared with purely thermal synthetic routes femtosecond laser synthesis favours formation of carbon dots-type fluorescent nanomaterials. 10.18721/JPM.153.333 544.536 femtosecond laser pulses nonlinear absorption laser treatment nanomaterials luminescent carbon dots photobleaching photostability https://physmath.spbstu.ru/article/2022.60.33/

CNF RUS 177-180 Alferov University Scherbak Sergey sergeygtn@yandex.ru Alferov University Reshetov Ilya reshetov_iv@spbstu.ru Alferov University Lipovskii Andrey lipovskii@mail.ru Optical second-harmonic response of an axially-symmetric medium under radially polarized excitation We simulated optical second harmonic response, both surface and bulk, of axially symmetric media excited by tightly focused radially polarized fundamental beams. The modeling showed a highly localized character of second harmonic generation. We estimated decrease of overall second harmonic signal for defocusing of fundamental beam relatively to a sample’s surface. Radiation patterns of second harmonic waves were compared for different numerical apertures of a focusing objective, for different focus shift relatively to the sample’s surface and for surface and bulk second harmonic responses. The model developed is applicable for second harmonic generation by interfaces, films and poled glasses. 10.18721/JPM.153.334 535.135 nonlinear optics second harmonic generation radial polarization axisymmetric medium modeling https://physmath.spbstu.ru/article/2022.60.34/

CNF RUS 182-187 Miropoltsev Maxim miropoltsev_m@niuitmo.ru Tkach Anton toni.tkach95@gmail.com Maleeva Kseniya khnykina.kseniya@mail.ru Bogdanov Kirill kirw.bog@itmo.ru Fabrication of SERS-active structures via electrostatic deposition of colloidal gold nanoparticles on polymer microspheres In the present study, we report on the fabrication and investigation of SERS active structures based on the polystyrene microspheres functionalized with gold nanoparticles. Successful deposition of the gold nanoparticles on the  microsphere surface has been confirmed using the scanning electron microscopy and the zeta potential measurements. The proof-ofconcept experiments have demonstrated the SERS effect with the average enhancement factor of about 103. The studied structures are stable, easy to fabricate, and ready for application in sensing. 10.18721/JPM.153.335 53.043 gold nanoparticles plasmonic nanoparticles microspheres surface-enhanced Raman scattering (SERS) layer-by-layer deposition https://physmath.spbstu.ru/article/2022.60.35/

CNF RUS 188-193 Peretokin Artem starosta177occ@mail.ru Stepikhova Margarita Novikov Alexey anov@ipmras.ru Smagina Zhanna smagina@isp.nsc.ru Dyakov Sergey s.dyakov@skoltech.ru Peculiarities of the luminescence response of two-dimensional photonic crystals with ordered Ge(Si) nanoislands obtained using different ordering approaches In this work, we investigated the luminescent properties of two-dimensional photonic crystals (PhCs) with ordered Ge(Si) nanoislands obtained using one- and two-stage approaches to ordering. The features of the luminescent  response of such structures and their relationship with the ordering processes of nanoislands are considered. It is shown that the incorporation of Ge(Si) nanoislands into a two-dimensional PhC makes it possible to increase the  intensity of their luminescent response by more than an order of magnitude, which makes the structures under consideration promising for practical applications. 10.18721/JPM.153.336 535-15 photonic crystals Ge(Si) nanoislands ordering photoluminescence https://physmath.spbstu.ru/article/2022.60.36/

CNF RUS 194-197 Mekhtiev El mekhtiev@phystech.edu Gerasin Ilia i.gerasin@goqrate.com Rudavin Nikita n.rudavin@goqrate.com Duplinsky Alexey a.duplinsky@goqrate.com Kurochkin Yury yk@goqrate.com Posterior laser-locking technique for MDI-QKD We present a novel soft-ware based method to ensure independent lasers mutual coherence required for practical realization of advanced Measurement Device Independent Quantum Key Distribution (MDI-QKD) protocols. Proof of principle experiment has proved validity of the method, providing mutual coherence time while upper bound dictated by uncontrollable phase drift in optical fiber being ~ 100 µs. 10.18721/JPM.153.337 53 MDI-QKD mode-pairing protocol asynchronous protocols mutual phase stabilization mutual coherence https://physmath.spbstu.ru/article/2022.60.37/

CNF RUS 198-201 Gerasin Ilia i.gerasin@goqrate.com Mekhtiev El mekhtiev@phystech.edu Maksimova Elizaveta e.maksimova@goqrate.com Rudavin Nikita n.rudavin@goqrate.com Duplinsky Alexey a.duplinsky@goqrate.com Kurochkin Yury yk@goqrate.com Novel method for preparing high-indistinguishable coherent states The preparation of indistinguishable quantum states by remote users is one of the crucial tasks in MDI-QKD. To solve this problem, laser injection techniques or modulation of the CW laser on the transceiver side are used. These techniques require a complex setup or a pair of modulators. Here we present a different setup for generating coherent states, using one modulator and one gain-switched laser per transceiver, to find a balance between the complexity of the setup and its cost. The level of indistinguishability achieved allows our scheme to be used in high-speed MDI-QKD protocols. 10.18721/JPM.153.338 53 MDI-QKD Hong-Ou-Mandel interference Weak Coherent Pulses with Randomized Phase Indistinguishable quantum states https://physmath.spbstu.ru/article/2022.60.38/

CNF RUS 202-206 Merzlinkin Vitalii merzlinkin@yandex.ru 0000-0003-1511-1128 Khmelev Aleksandr a.khmelev@goqrate.com Duplinsky Alexey a.duplinsky@goqrate.com 0000-0002-1599-9801 Kurochkin Vladimir v.kurochkin@rqc.ru Kurochkin Yury yk@goqrate.com Polarization compensation design for free-space quantum communication transmitter Quantum communication is a transmission technology that allows legitimate users to share a secret key. The BB84 protocol employs four linear polarization states for encoding in our quantum key distribution system. However, the optical elements affect the polarization features of quantum state, which leads to errors in decoded key. To reduce mistakes and increase device encoding performance, a polarization controller is included in the optical circuit. An algorithm identifying the angles of the polarization controller's wave plates has been developed. We conclude that using a polarization controller and the method of finding angles has improved the polarization extinction ration for all encoding channels of designed free-space transmitter. Finding angles of the plates is a problem of optimizing the search for parameters where the trace of matrix is maximum in the Stokes-Muller formalism. We used the gradient descent approach to determine the angles of the plates and we were able to obtain optical part of QBER values of 0.12 percent, so decreasing its values by 185 times. 10.18721/JPM.153.339 535.51 quantum communications quantum key distribution BB84 protocol polarization controller phase shift the Poincare sphere polarimetry https://physmath.spbstu.ru/article/2022.60.39/

CNF RUS 207-212 Dobretsov Roman dr-idpo@yandex.ru Davydov Vadim davydov_vadim66@mail.ru Institute for Analytical Instrumentation RAS Evstrapov Anatoly an_evs@mail.ru

St. Petersburg, Russian Federation

Creation of a device for detecting fluorescence from microfluidic chips In this paper, we consider the creation and testing of a prototype for recording fluorescence from microfluidic chips during the polymerase chain reaction (PCR). The paper presents the characteristics of the main elements used to create the layout of the device for fluorescence detection. The results of experiments in testing the performance of mock-up elements and microfluidic chips are presented. The operability of the assembled layout was demonstrated during the real-time PCR reaction. 10.18721/JPM.153.340 53.083 polymerase chain reaction (PCR) microfluidic chip DNA fluorescence dyes thermal cycler optical fiber amplification https://physmath.spbstu.ru/article/2022.60.40/

CNF RUS 213-218 Mikhailovskii Mikhail m.mikhailovskii@gmail.com Savelev Roman r.savelev@metalab.ifmo.ru Sidorenko Mikhail mikhail.sidorenko@metalab.ifmo.ru Sadrieva Zarina zarinasadrieva@mail.ru Bogdanov Andrey a.bogdanov@metalab.ifmo.ru ITMO University Petrov Mihail m.petrov@metalab.ifmo.ru

St. Petersburg, Russian Federation

Collective states with high quality factors in chains of dielectric resonators Coupled dielectric subwavelength resonators supporting collective states with high quality factors are of interest due to potential in the enhancement of the light-matter interaction at the nanoscale and high versatility and tunability of such structures. Recently, it was theoretically shown that coupling between two or more collective modes via radiation continuum that can occur under variation of the parameters of such structures could significantly boost the quality factor of one of the eigenmodes. In this work, we have studied such effect numerically and experimentally for a chain of ceramic cylinders operating in the microwave spectral range. We have investigated how the present channels of losses, namely material losses, and additional scattering due to variation in geometrical and materials parameters, influence the considered effect. We have developed a feasible design that allows for observation of mode interaction. Experimental measurements of the spectral response of the proposed structures confirmed the main predicted results. 10.18721/JPM.153.341 535.417.2 dielectric resonators band edge states interaction of resonances nanophotonics microwave prototyping https://physmath.spbstu.ru/article/2022.60.41/

CNF RUS 219-222 Tolkach Nikita n.m.tolkach@gmail.com Vishnyakov Nickolay rcpm-rgrtu@yandex.ru Litvinov Vladimir vglit@yandex.ru Yakubov Alexey alexsey007@mail.ru Trofimov Egor egor_trofimov.ru@mail.ru Sherchenkov Alexey aa_sherchenkov@rambler.ru Investigation of crystallinity degree for Ge2Sb2Te5 films by reflection and transmission photometry To assess the crystallinity degree for Ge2Sb2Te5 (GST) films the method of reflection and transmission photometry and the approximation of an effective medium of the Brueggemann type were used. It was found that the changes in the energy and duration of the laser pulse lead to the change in the ratio of crystalline and amorphous fractions and change in crystallinity degree. It was found that an increase of crystalline fraction leads to an increase of refractive index and extinction coefficient at telecommunication wavelength of 1550 nm, which also leads to changes of reflectivity and transmissivity of the GST film and can be used to perform modulation and switching of signals. 10.18721/JPM.153.342 535.417, 544.015.4, 536.331, 538.958, 538.975 crystallinity degree photometry Ge2Sb2Te5 phase change material phase transition phase state amorphous crystalline https://physmath.spbstu.ru/article/2022.60.42/ 42_3_3_15_2022_219-222.pdf

CNF RUS 223-225 Kondratiev Valeriy kondratyevvalery.i@gmail.com Ivanova Tatyana tatyana.ivanova@metalab.ifmo.ru Tyugaev Mikhail mikhail.tiugaev@metalab.ifmo.ru Samusev Anton a.samusev@metalab.ifmo.ru ITMO University Kravtsov Vasily vasily.kravtsov@metalab.ifmo.ru

St. Petersburg, Russian Federation

Experimental study of all-van-der-Waals waveguide polaritons at room temperature In this work, we experimentally investigate guided polaritons utilizing only 2D van der Waals materials, with hexagonal boron nitride (hBN) as the waveguide layer and WS2 monolayer as the excitonic medium. We place the WS2  monolayer at the maximum of the waveguide mode electromagnetic field, therefore reaching optimal conditions for the strong coupling between the exciton resonance and waveguide mode. To excite and detect the non-radiating waveguide polariton modes, we use the back focal plane microscopy with a high-index solid immersion lens. Polaritons in such all-van-der-Waals structures observed in ambient conditions reveal new possibilities for studying fundamental aspects of light-matter interaction and provide strong advantages in terms of miniaturization and integrability of future photonic devices. 10.18721/JPM.153.343 53.05 van der Waals materials 2D semiconductors exciton-polaritons waveguide polaritons https://physmath.spbstu.ru/article/2022.60.43/

CNF RUS 226-229 Frolov Ilya ilya-frolov88@mail.ru Radaev Oleg oleg.radaev.91@mail.ru 0000-0003-4854-2813 Sergeev Viacheslav sva@ulstu.ru Measurement of the internal quantum efficiency of emission in the local region of the LED chip A method for measuring the internal quantum efficiency in local areas of the LED chip is presented. The method is based on measuring the emission brightness distribution profiles and 3 dB frequencies of the electroluminescence of the LED at two low values of currents with a digital CMOS camera and calculating the internal quantum efficiency for each image pixel using the formula obtained in accordance with the ABC model of charge carrier recombination in a heterostructure. The measurement method was tested on the example of commercial blue InGaN LEDs. It is shown that the degree of homogeneity of the internal quantum efficiency distribution profile is significantly higher than the degree of homogeneity of the emission brightness distribution profile, which is due to the inhomogeneity of the distribution of the light extraction efficiency coefficient in different areas of the LED chip. The presented measurement method can be used to diagnose defects in local areas of the LED heterostructure. 10.18721/JPM.153.344 621.382.088 LED light-emitting heterostructure internal quantum efficiency measurements https://physmath.spbstu.ru/article/2022.60.44/

CNF RUS 230-234 Dryazgov Mikhail mdryazgov@hse.ru Korneeva Yuliya korneeva_yuliya@mail.ru Korneev Alexander alex.korneev78@gmail.com New design of a waveguide integrated photon number resolving superconducting detector with micron-wide strips We report on the development of a design for a waveguide integrated photon number resolving superconducting detector with micron-wide strips. The detector is designed for a 1550-nm-wavelength single-mode waveguide. Using the planarization operation, it is possible to cover the waveguide and the entire area around it with a dielectric layer, producing a flat surface for the superconducting detector fabrication. The detector is formed in a shape of a straight line directly above the waveguide. The length and width of the superconducting detector are chosen to absorb maximum of the radiation from the waveguide. In the same superconductor layer, the Klopfenstein taper  impedance transformer is designed as a non-uniform coplanar line. The use of impedance matching Klopfenstein tapers makes it possible to distinguish the resistances of several hot spots, that is, to distinguish the number of  absorbed photons. The detector should absorb almost all radiation and be capable to distinguish up to 3 photons in an optical pulse. 10.18721/JPM.153.345 538.945 superconductivity photon number resolving detector integrated photonic Klopfenstein taper https://physmath.spbstu.ru/article/2022.60.45/

CNF RUS 235-238 Fomin Alexey dep5@vniitf.ru Filonenko Elena efilonenko1310@gmail.com Kryukov Sergey dep5@vniitf.ru Nazhmetov Salavat dep5@vniitf.ru The effect of mesa-stripe design parameters on the 975 nm laser diode output characteristics The present work is devoted to evaluating the effect of mesa-stripe design parameters on the output characteristics of 975 nm InGaAs/GaAs/AlGaAs laser diodes with the emitting stripe width W = 100 µm and the cavity length L = 4 mm. The output power, threshold current, central wavelength, and full spectral width at half maximum values were analyzed when comparing the two variants of mesa-stripe design to determine the optimal etching depth of  semiconductor structure. Two variants of the mesa-stripe design were obtained by plasmachemical etching to different depths of the heterostructure. According to the results of the study for the mesa-stripe design formed by etching to the p-cladding layer of the laser heterostructure, a less scatter of the controlled parameters within a group of fabricated laser diodes and effective suppression of parasitic lateral modes in the LD cavity were revealed. 10.18721/JPM.153.346 621.373.826 optoelectronics laser diode optical confinement mesa-stripe design etching depth electrooptical parameters https://physmath.spbstu.ru/article/2022.60.46/

CNF RUS 239-243 Eurov Daniil edan@mail.ru Volkova Ekaterina starosta194volkova@gmail.com 0000-0002-1571-209X ITMO University Kirilenko Demid demid.kirilenko@mail.ioffe.ru

St. Petersburg, Russian Federation

Ioffe Institute Kurdyukov Dmitry kurd@gvg.ioffe.ru

St. Petersburg, Russian Federation

Stovpiaga Ekaterina kattrof@gvg.ioffe.ru TEM contrast enhancement by adsorption of erbium ions on the inner surface of micro-mesoporous silica particles A simple and facile method is proposed for treatment of the inner surface of micro-mesoporous spherical particles of amorphous silica with the solutions of heavy element salts, which allows direct visualization of the particles’ porous structure by the transmission electron microscopy (TEM) technique. The method is based on the adsorption of ions of heavy elements (on the example of Er3+ ions) by the surface of the pores, which makes it possible to enhance the contrast in the TEM image. The particles before and after erbium ions adsorption are characterized by means of TEM, nitrogen porosimetry and energy dispersive X-ray spectroscopy. It is demonstrated that the developed method for the particles’ surface functionalization allows implementing erbium adsorption without affecting the morphology and inner structure of particles. It is shown that erbium content after the adsorption procedure does not exceed 0.1 at.% and the pore structure of silica particles remains the same – the specific surface area, volume and pore size do not change. 10.18721/JPM. 153.347 546.06, 546.05 porous silica adsorption transmission electron microscopy erbium ions microporosity https://physmath.spbstu.ru/article/2022.60.47/

CNF RUS 244-249 Peter the Great St. Petersburg Polytechnic University Babich Ekaterina babich.katherina@gmail.com Peter the Great St. Petersburg Polytechnic University Alferov University Kaasik Vladimir vkaasik@yandex.ru Institute for Problems of Mechanical Engineering RAS Alexey V. red-alex@mail.ru Alferov University Lipovskii Andrey lipovskii@mail.ru Optical absorption and Raman scattering mapping of nanoparticles patterns formed in glass by nanosecond laser in UV, VIS and IR The paper is devoted to optical study of silver nanoparticles formed in a glass enriched with silver ions upon irradiation with nanosecond laser in UV, VIS and IR. The silver ions were introduced in glass by ion-exchange procedure.  The silver nanoparticles were patterned to form spot-like (irradiation with individual laser pulses) and lines-like (laser pulses overlap on the glass surface) ensembles. Obtained optical absorption maps of spot-like and lines-like  ensembles subjected to additional chemical etching of the glass reveal the impact of laser wavelength, fluence and pulse frequency on the spatial (lateral and depth) arrangement of the nanoparticles in the ensembles. The  applicability of the etched and non-etched spot-like and lines-like ensembles in surface enhanced Raman scattering spectroscopy was demonstrated, and Raman scattering maps of the ensembles were obtained. The homogeneity  of the signal along the ensembles and Raman enhancement factor were evaluated and compared with ones of silver nanostructures formed by other techniques. 10.18721/JPM.153.348 538.958 silver nanoparticles glass nanosecond laser https://physmath.spbstu.ru/article/2022.60.48/

CNF RUS 250-254 Stetsyura Svetlana stetsyurasv@mail.ru Kharitonova Polina haritonovapg@gmail.com Glukhovskoy Evgeny Glukhovskoy@gmail.com Langmuir-Blodgett technology to obtain semi- magnetic photosensitive materials We studied the technological modes of obtaining of nanoscale coatings containing a controlled number of iron atoms on a semiconductor substrate by Langmuir-Blodgett technology. We determined the regime of obtaining a  monolayer of iron arachinate with the maximum content of iron atoms into monolayer. The analysis of compression isotherms made it possible to determine the surface density of the of iron atoms. Modeling the processes of diffusion  taking into account the limited solubility Fe in CdS makes it possible to estimate the number of iron arachinate monolayers required to form a heterophase material that exhibits magnetic properties. The diffusion coefficient of Fe atoms in CdS was determined experimentally from the profile of iron distribution in CdS obtained using secondary ion mass spectrometry. The model allows to predict the density and depth of the occurrence of the nanosized iron-containing phases. It was obtained that 30 monolayers of iron arachinate obtained at pH = 5.83 provide the formation of nanosized phases at a depth of up to 300 µm. The annealing was for 30 minutes at a temperature of 450 °C. 10.18721/JPM.153.349 539.23, 620.3 Langmuir-Blodgett technology heterophase material ferromagnetic phase semi-magnetic material monolayer diffusion https://physmath.spbstu.ru/article/2022.60.49/

CNF RUS 255-259 Volkova Maria mvol@sfedu.ru Ivanishcheva Alexandra starnikova@sfedu.ru 0000-0003-3725-6053 Petrov Viktor vvpetrov@sfedu.ru Bayan Ekaterina ekbayan@sfedu.ru The effect of the seed layer on the TiO2 nanotubes coatings quality grown on the glass substrates by hydrothermal synthesis Coatings of titanium dioxide nanotubes were obtained on glass substrates by hydrothermal synthesis method. The influence of the seed layer synthesis method on the coatings quality was studied. The synthesized materials are nanoscale, crystallized in a mixed anatase-rutile modification. It was shown that for seed layers deposited by low-temperature solid-phase pyrolysis technique, the coatings are more homogeneous than for seed layers deposited by sol-gel method. In addition, a tendency to agglomeration was noted for nanotubes grown on a seed layer deposited by the sol-gel method. The electrophysical properties study showed that for materials with a seed layer obtained by the sol-gel method, the resistance is an order of magnitude higher than for materials with a seed layer synthesized by low-temperature pyrolysis technique. The activation energy (Ea) for titanium dioxide nanotubes (seed layer is applied by sol-gel method) was 0.74 eV, and for the sample obtained by low-temperature pyrolysis Ea was 0.68 eV. 10.18721/JPM.153.350 546.05; 538.975 titanium dioxide thin films hydrothermal synthesis seed layer nanotubes https://physmath.spbstu.ru/article/2022.60.50/

CNF RUS 260-264 Melnichenko Ivan imelnichenko@hse.ru Kryzhanovskaya Natalia V. Natalia nkryzhanovskaya@hse.ru Berdnikov Yuri yuryberdnikov@gmail.com 0000-0003-3686-935X National Research University “Higher School of Economics” (St. Petersburg branch) Moiseev Eduard emoiseev@hse.ru National Research University ‘Higher School of Economics” Makhov Ivan imahov@hse.ru Optical studies of InP nanostructures monolithically integrated in Si (100) We present a photoluminescence study of InP nanostructures monolithically integrated to Si (100) substrate. The InP nanostructures were grown in pre-formed pits in the silicon substrate using an original approach by metal–organic vapor phase epitaxy via selective area growth driven by molten alloy. The obtained InP/Si nanostructures have submicron size above and below substrate surface. InP nanostructures were investigated by photoluminescence spectroscopy at temperatures in the range of 5–300 K and at different pump power. Room temperature photoluminescence spectra of the studied structures exhibit the peak corresponding to zinc blende InP band gap. The obtained results show high crystalline quality of the InP material. 10.18721/JPM.153.351 538.958 III-V nanostructures InP monolithically integrated on silicon near IR radiation https://physmath.spbstu.ru/article/2022.60.51/

CNF RUS 265-270 Gulyaeva Irina tenirka@mail.ru Ivanishcheva Alexandra starnikova@sfedu.ru Volkova Maria mvol@sfedu.ru Bayan Ekaterina ekbayan@sfedu.ru 0000-0003-3725-6053 Petrov Viktor vvpetrov@sfedu.ru Surface and electrophysical properties study of thin TiO2-SnO2 nanocomposite films Thin nanocomposite films based on pure tin dioxide with a low content of titanium oxide (0, 1, 3, and 5 mol %) were obtained by solid-phase low-temperature pyrolysis. The thickness of the films obtained was up to 200 nm. The particle size of the TiO2-SnO2 nanomaterial lies in the range of 7–13 nm. Atomic force microscopy (AFM) showed that the films have a granular structure with a height difference of 11–114 nm. The surface of the film with a Ti concentration of 5 mol.% has a higher roughness compared to other samples. Force microscopy with a Kelvin probe (KPFM) revealed a surface potential, indicating the existence of a strong surface electric field. A small addition of titanium dioxide (1%) to the tin dioxide structure leads to the appearance of peak values of the surface potential, the value of which reaches 1325 mV. Studies of the temperature dependences of the obtained samples showed that the pure SnO2 film has the maximum resistance values and high nonlinearity. However, with a small addition of titanium dioxide (1%) to tin dioxide, the electrical resistance of the nanosized material sharply decreases and has  indicators 4–5 orders of magnitude lower than those of pure SnO2 films. 10.18721/JPM.153.352 546.05; 538.975 nanomaterials thin films pyrolysis tin dioxide titanium dioxide surface potential electrical properties https://physmath.spbstu.ru/article/2022.60.52/

CNF RUS 271-275 Gulyaeva Irina tenirka@mail.ru Ignatieva Irina iignateva@sfedu.ru Bayan Ekaterina ekbayan@sfedu.ru 0000-0003-3725-6053 Petrov Viktor vvpetrov@sfedu.ru Study of structural properties and photoconductivity of Co3O4– ZnO thin films In this work, we study the photoconductivity parameters of Co3O4–ZnO thin films formed on polycortex substrates. Co3O4–ZnO nanocomposite films were deposited on substrates by solid-phase pyrolysis with a Co:Zn molar ratio of 10:90, 5:95, 3:97, and 1:99 and annealed at a temperature of 600 °C. The film thickness was 150–200 nm. The crystal structure of the films was studied, and the SEM images were analyzed. After application of contact metallization, the parameters of photoconductivity were measured under the action of light from an LED with a wavelength of 400 nm. 10.18721/JPM.153.353 546.05; 538.975 nanomaterials thin films solid-state pyrolysis photoconductivity https://physmath.spbstu.ru/article/2022.60.53/

CNF RUS 276-280 Malo Dana malo.dana@mail.ru Moscow Institute of Physics and Technology (National Research University) Lizunova Anna anna.lizunova@gmail.com

Dolgoprudny, Moscow region, Russian Federation

Nouraldeen Messan messannouraldeen@phystech.edu Borisov Vladislav borisov.vi@phystech.edu Ivanov Victor ivanov.vv@mipt.ru Aluminum nanostructures produced by aerosol dry printing for ultraviolet photoluminescence enhancement Aluminum nanoparticles and nanostructures characterized by plasmon resonance in the ultraviolet (UV) range became a subject of intense research. Fluorescence is considered an important phenomenon in catalysis, UV photonics and in clinical medicine, for example, in cell imaging, medical diagnostics and biophysical studies. This work demonstrates metal-enhanced luminescence in the UV region of zinc oxide nanoparticles deposited on films of aluminum nanoparticles formed by dry aerosol printing on quartz substrates. Two different conditions of metal aluminum nanoparticles (Al NPs) production in spark discharge method were used to obtain aluminum nanoparticles with an average size 9.5 ± 5.6 and 15.5 ± 8.9 nm. At an excitation wavelength of 325 nm, the photoluminescent enhancement factor at 377 nm was about 1.3 for zinc oxide nanoparticles (ZnO NPs) with mean size 26.6 ± 7.4 nm. This study is a  perspective step to confirm the benefits and focus attention on the plasmonic properties of Al nanostructures in UV range. 10.18721/JPM.153.354 544.7 metal enhanced luminescence ultraviolet region (UV) aluminum nanostructures aluminum nanoparticles zinc oxide nanoparticles films spark discharge method dry aerosol printing https://physmath.spbstu.ru/article/2022.60.54/

CNF RUS 281-284 Bondarenko Dariya bondarenko.dariya.spb@gmail.com Gridchin Vladislav gridchinvo@gmail.com Kotlyar Konstantin konstantin21kt@gmail.com 0000-0002-4894-6503 Alferov University Baranov Artem I. baranov_art@spbau.ru

St. Petersburg, Russian Federation

0000-0002-3503-7458 St. Petersburg Electrotechnical University "LETI" Maksimova Alina A. deer.blackgreen@yandex.ru Reznik Rodion moment92@mail.ru Cirlin George george.cirlin@mail.ru Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate The paper presents an approach to growth of GaN nanowires with thick core-shell InGaN insertions with a high indium content for creation of LED structure. The study of the electrical properties shows typical diode dependence. The results obtained can make a significant contribution to the development of light emitting diodes on silicon substrates. 10.18721/JPM.153.355 538.975 micro light-emitting diodes molecular beam epitaxy GaN/InGaN nanowires silicon substrates thick core-shell InGaN insertions https://physmath.spbstu.ru/article/2022.60.55/

CNF RUS 285-289 Enns Yakov ennsjb@gmail.com Kazakin Aleksey keha@newmail.ru Komarevtcev Ivan vanec@aport.ru 0000-0001-6869-1213 Alferov University Vyacheslavova Ekaterina cate.viacheslavova@yandex.ru Kondrateva Anastasia kondrateva_n@spbau.ru Mishin Maxim maximvmishin@gmail.com, mmishin@spbstu.ru Modification of the optical and electrical properties of NiO films by thermal annealing This paper presents the results of studying the effect of thermal annealing on the optical and electrical characteristics of NiO films. NiO layers were synthesized using DC magnetron sputtering from a Ni target. The films were deposited in an Ar/O2 gas mixture with a ratio of 70%/30%, respectively. The deposition power was 100 W. The resulting films had low transparency and high conductivity, which is associated with a high content of oxygen vacancies in the NiO structural layer. The influence of thermal annealing on the characteristics of NiO films was studied on films obtained by magnetron sputtering. Annealing was carried out in an oxygen-containing environment at temperatures from 200 °C to 550 °C and an annealing duration from 5 to 120 minutes. The results of optical studies have shown that annealing at temperatures up to 550 °C leads to an increase in transparency from 5% to 80% at a wavelength of 700 nm. In this case, an increase in the temperature and duration of the process is accompanied by an increase in the optical band gap. A similar trend was observed in the study of film conductivity, where an increase in the  annealing temperature leads to an increase in resistivity from 0.2 Ω cm to 1460 Ω cm. 10.18721/JPM.153.356 621.317.39.084.2 nickel oxide transparency thermal annealing resistivity optical band gap https://physmath.spbstu.ru/article/2022.60.56/

CNF RUS 290-294 Kurilova Anastasiia ankurilova@niuitmo.ru Sukhachev Alexander sanya@iph.krasn.ru Bogdanov Kirill kirw.bog@itmo.ru Nemtsev Ivan nemtsev@iph.krasn.ru Dubavik Alexey adubavik@itmo.ru Sokolov Alexey alexeys@iph.krasn.ru Synthesis and properties of nanostructure composites based on barium titanate and 3D metals We report the production of a hybrid nanostructure combining ferroelectric and antiferromagnetic ordering based on toroidal nanoparticles of barium titanate and an iron-cobalt nanoalloy. The methods of optical and magneto-optical spectroscopy revealed a change in the coordination of 3D metal ions in the composition of FeCo after high-temperature annealing in the presence of barium titanate, and a study of the magnetic properties showed a change in the predominant alignment of spins from superparamagnetic to antiferromagnetic type. In addition, the sample exhibits optically nonlinear properties. 10.18721/JPM.153.357 537.632.4, 537.635 antiferromagnetism magnetoelectric magnitooptic https://physmath.spbstu.ru/article/2022.60.57/

CNF RUS 295-299 Kutepov Maxim kutepov.max@yandex.ru Domaratskiy Ivan Domaratskiy@phystech.edu Zhukov Sergey zhukov.ss@mipt.ru Kaidashev Evgeni emkaydashev@sfedu.ru Lisnevskaya Inna liv@sfedu.ru Abdulvakhidov Kamaludin kgabdulvahidov@sfedu.ru Kaydashev Vladimir kaydashev@gmail.com Optimizing deposition regimes to fabricate vanadium dioxide film for active metasurfaces Several deposition protocols to obtain epitaxial VO2 films from metallic vanadium and VO2 targets are compared. Films obtained from VO2 target showed much smoother and droplet free surface compared to those prepared from V target. The samples prepared from oxide target in average showed larger middle IR reflection of 55–67% in conducting state compared to ~ 56% for samples obtained from metal V target. 10.18721/JPM.153.358 538.911, 538.953 vanadium dioxide metal-to-isolator transition pulsed laser deposition https://physmath.spbstu.ru/article/2022.60.58/

CNF RUS 300-305 Morozova Ekaterina morozovaev@ulsu.ru Timkaeva Diana dianatimkaeva@mail.ru Thermoelectric properties of graphenylene nanotubes with encapsulated fullerenes Thermoelectric properties of graphenylene nanotubes with encapsulated C60 fullerenes are studied by means of the DFT-based calculations. The electrical and thermal conductivities, Peltier and Seebeck coefficients, and thermoelectric figure of merit ZT are estimated for different distances between fullerenes and various chirality of graphenylene nanotubes. 10.18721/JPM.153.359 29.19.22 graphenylene nanotubes fullerene thermoelectric figure of merit https://physmath.spbstu.ru/article/2022.60.59/

CNF RUS 306-310 Masharin Mikhail mikhail.masharin@metalab.ifmo.ru 0000-0002-9257-6183 Makarov Sergey s.makarov@metalab.ifmo.ru Samusev Anton a.samusev@metalab.ifmo.ru Temperature-dependent exciton-polaritons in perovskite photonic crystal slab Exciton-polaritons are perspective platform for realizing ultrafast and strong optical modulations, which are necessary for the plant of applications. However, exciton-polaritons are studied mostly for semiconductor quantum wells inside vertical Bragg cavities, which limits it to the cryogenic temperatures and prevents planar realizations, which can be a problem for real-world applications. Recently, perovskites become one of the perspective materials for room-temperature strong light-matter coupling regime due to their unique physical properties. In this work, we experimentally demonstrate for the first-time room-temperature exciton-polaritons in planar halide perovskite photonic crystal slab fabricated by a nanoimprint lithography method. We experimentally measured polariton dispersion from angle-resolved photoluminescence spectra and confirm the strong light-matter coupling regime at room temperature and lower. Also, we studied the temperature dependence of the exciton energy level in MAPbBr3 and the light-matter coupling coefficient. The obtained dependences can be attributed to polaron effects in this material. The results can become the basis of further research on perovskite exciton-polaritons in planar photonic cavities. 10.18721/JPM.153.360 535.327 halide perovskites exciton-polaritons photonic crystal slab https://physmath.spbstu.ru/article/2022.60.60/

CNF RUS 311-314 Gridchin Vladislav gridchinvo@gmail.com Reznik Rodion moment92@mail.ru Kotlyar Konstantin konstantin21kt@gmail.com 0000-0002-4110-1647 Shugabaev Talgat talgashugabaev@mail.ru Dragunova Anna anndra@list.ru Kryzhanovskaya Natalia V. Natalia nkryzhanovskaya@hse.ru Cirlin George george.cirlin@mail.ru Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates In this work, we study the influence of the substrate temperature on the structural and optical properties of InGaN nanostructures synthesized by plasma-assisted molecular beam epitaxy. We show that ternary InGaN alloys with a chemical composition within the miscibility gap can be synthesized under N-rich growth conditions at the substrate temperatures from 600 to 670 °C. The results can be used to create visible and white light-emitting diodes on Si substrates. 10.18721/JPM.153.361 538.975 InGaN silicon structural properties optical properties plasma-assisted molecular beam epitaxy https://physmath.spbstu.ru/article/2022.60.61/

CNF RUS 315-319 Balakirev Sergey sbalakirev@sfedu.ru Lakhina Ekaterina lakhina@sfedu.ru Kirichenko Danil dankir@sfedu.ru Chernenko Natalia nchernenko@sfedu.ru Shandyba Nikita shandyba.nikita@gmail.com Eremenko Mikhail eryomenko@sfedu.ru Solodovnik Maxim solodovnikms@sfedu.ru Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux GaAs nanostructures are promising candidates for use in future nanoelectronics and quantum photonics. However, technology of their controllable fabrication with precisely predefined size, shape and surface density still requires further improvement. In this paper, we reveal a possibility to reduce a size of gallium droplets using exposure to the arsenic flux of ultra-low values. The control of size and shape of droplets is implemented independently of their surface density that enables formation of low-density arrays of small-sized quantum dots. Based on droplet arrays with trimodal size distribution, we demonstrate that droplets with larger sizes are less influenced by the low arsenic flux whereas smaller droplets may reduce in volume or decay completely resulting in the formation of nanoholes. The technique under consideration can be used for the fabrication of single quantum dot devices with specified  characteristics. 10.18721/JPM.153.362 538.9. droplet epitaxy GaAs nanostructures arsenic flux https://physmath.spbstu.ru/article/2022.60.62/

CNF RUS 320-325 Miroshnichenko Anna anna.miroshnichenko.sergeevna@gmail.com Deriabin Konstantin deriabin.k@yahoo.com 0000-0001-9792-045X Peter the Great St. Petersburg Polytechnic University Mukhin Ivan muhin_is@spbstu.ru Islamova Regina r.islamova@spbu.ru Low-adhesive silicone rubbers for flexible light-emitting devices In this work, 2-phenylethyl-functionalized (SSR) and 2-methyl-3-methoxy-3-oxopropyl-functionalized silicone rubbers (MSR) were obtained via the platinum(0)-catalyzed hydrosilylation reaction between styrene/methyl methacrylate and polymethylhydrosiloxane. SSR exhibits both sufficient elongation at break (ɛ = 45 ± 5%), tensile strength (σ = 1.5 ± 0.4 MPa) and Young’s modulus, (E = 3.4 ± 0.7 MPa), which is higher than for Sylgard 184 (E = 1.1 ± 0.3 MPa). SSR and MSR are optically transparent and exhibit a low adhesion to a Si substrate. However, MSR possesses lower tensile strength (σ = 0.6 ± 0.1MPa, E = 0.6 ± 0.1 MPa) comparing to SSR. Thus, SSR was applied as a supporting polymer matrix for encapsulation of inorganic NWs arrays for flexible optoelectronics. 10.18721/JPM.153.363 541.1 catalytic hydrosylilation polysiloxanes nanowires light-emitting diodes https://physmath.spbstu.ru/article/2022.60.63/

CNF RUS 326-329 Tonkaev Pavel pavel.tonkaev@metalab.ifmo.ru Grechaninova Evgenia e.grechaninova@metalab.ifmo.ru 0000-0002-1793-6812 Pushkarev Anatoly anatoly.pushkarev@metalab.ifmo.ru 0000-0002-9257-6183 Makarov Sergey s.makarov@metalab.ifmo.ru Photoluminescence from lead halide perovskite superlattices Lead halide perovskites are a new class of materials with promising optoelectronic properties. Bulk halide perovskites have been applied as solar cells, light-emitting diodes, photodetectors, and nanolasers. Colloidal lead halide perovskite nanocrystals have shown high quantum efficiency of photoluminescence. Moreover, perovskite nanocrystals can be assembled in an ordered 3D array or superlattice to demonstrate superfluorescence emission. In this work, we synthesized CsPbBr3 superlattices with the linear size of several micrometers and studied their photoluminescence properties at room temperature and 6 K. We demonstrated that the photoluminescence spectra of  perovskite nanocrystals are preserved in superlattices at both temperatures. We also found a small spectral shift, which we attribute to a more uniformal size distribution of nanocrystals in the superlattice. 10.18721/JPM.153.364 535.37 halide perovskites nanocrystals superlattice photoluminescence Mie resonance Purcell effect https://physmath.spbstu.ru/article/2022.60.64/

CNF RUS 330-334 Peter the Great St. Petersburg Polytechnic University Zhurikhina Valentina zhurikhina@mail.edu.ioffe.ru Plasmonic structures for sensors The article provides a brief overview of the use of surface plasmon resonance in optical sensors of various types. Such sensors are widely used in healthcare, security, food safety and environmental monitoring. The physical basis and design of plasmon-enhanced sensors, such as colorimetric sensors, sensors based on plasmon-enhanced fluorescence, and surface-enhanced Raman sensors, are considered. 10.18721/JPM.153.365 538.97 plasmons sensors resonance field enhancement Raman scattering https://physmath.spbstu.ru/article/2022.60.65/

CNF RUS 335-339 Uvarov Ilia i.v.uvarov@bk.ru Naumov Viktor vvnau@ramber.ru Kupriyanov Alexander shurik7777@mail.ru Izyumov Mikhail mikhail-izyumov@yandex.ru Amirov Ildar ildamirov@yandex.ru A seesaw-type MEMS switch with Pt and Ru contacts Microelectromechanical systems (MEMS) switches have outstanding working characteristics and a wide range of possible applications, but suffer from the lack of reliability. The main reason of failure is the degradation of metal contacts, which increases the on-resistance or leads to stiction. A proper choice of the contact material may solve the problem. In this work, the performance of Pt-Pt and Ru-Ru contacts is investigated. The study is performed using a recently proposed stiction-protected MEMS switch. The contact resistance and lifecycle in the cold switching regime are measured and compared. 10.18721/JPM.153.366 621.3 MEMS switch electrostatic actuation contact resistance lifecycle https://physmath.spbstu.ru/article/2022.60.66/

CNF RUS 340-344 Lyubchak Anastasia anlyubchak@miem.hse.ru Prikhodko Anatoliy anatprikh1995@yandex.ru Andreev Vladislav AndrejeffVS@yandex.ru Shurakov Alexander alexander@rplab.ru Goltsman Grigory goltsman@rplab.ru A mmWave rod antenna array compatible with a PCB prototyping technology A mmWave communication is becoming a reality. Nowadays, 5G networks are at the stage of commercial implementation while numerous studies around the world are devoted to investigating practical issues of switching to the 6G standard. Next generation communication systems should rely on highly directive transceivers, which potentially suffer from a micromobility issue. In this paper, we report on the design of a mmWave rod antenna array compatible with a PCB prototyping technology. The array makes use of a dielectric multimode interference power splitter integrated with four weakly coupled dielectric rod antennas at its output. It is cheap to fabricate and has a half-power  beamwidth of 11° with a corresponding side lobe level of -11 dB at 135 GHz. Thus, the proposed design seems suitable for prototyping mmWave transceivers within lab studies of a micromobility issue in 6G networks. The design is adaptable for high permittivity PCB laminates and, therefore, is potentially compatible with Si platform. All together suggests efficient operation of dielectric rod antenna arrays in the mmWave band and beyond. 10.18721/JPM.153.367 621.396.67.012.12 millimeter waves dielectric rod antenna multimode interference power splitter antenna array PCB laminate direct machining https://physmath.spbstu.ru/article/2022.60.67/

CNF RUS 345-349 Prikhodko Anatoliy anatprikh1995@yandex.ru Belikov Ivan ibelikov@hse.ru Lvov Andrey andrei.lvov1707@yandex.ru Shurakov Alexander alexander@rplab.ru Goltsman Grigory goltsman@rplab.ru Millimeter wave photonic crystal waveguides fabricated via direct machining At the moment, millimeter waves attract close attention not only of the scientific community, but also of the communication industry. Number of studies worldwide are currently focused on finding efficient solutions for the transceiver technologies compatible with beamforming and carrier frequencies beyond 100 GHz. It was recently demonstrated that the technology of integrated silicon photonic crystals provides decent propagation loss and low fabrication complexity upon implementation of waveguide components for the submmWave band. In this paper, we report on the millimeter wave photonic crystal waveguides fabricated from high permittivity PCB laminate by the means of direct machining. Inspection of the fabricated waveguide samples reveals no violation of the photonic crystal geometry due to the fabrication tolerances. The photonic crystals are designed for operation at frequencies 140–160 GHz, and we measure the power attenuation coefficient attributed to the waveguide geometry of 0.02 dB/mm at 145 GHz. The design considerations, including justification of the laminate choice, and detailed results of performance tests are presented in the paper. 10.18721/JPM.153.368 52-77 millimeter waves photonic crystal waveguide high permittivity PCB laminate direct machining 2D CNC machining https://physmath.spbstu.ru/article/2022.60.68/

CNF RUS 350-353 Vosheva Tatyana Vosheva.ts@mipt.ru Bulatov Nikita separatast@gmail.com Burtsev Vladimir burtsev.vd@phystech.edu Khudykin Anton khudykin.aa@mipt.ru Filonov Dmitry dimfilonov@gmail.com Controlling asymmetric reflection of metasurfaces with loss Optical theorem, being the manifestation of the energy conservation law, relates the total scattering cross-section of a structure with its scattering in the forward direction. However, there are no fundamental restrictions on other  directions. Strong asymmetric reflection and backscattering can be achieved in structures with magneto-electric coupling, taking place between constitutive elements. Here scattering properties of single meta-particles, based on  near-field coupled electric and magnetic dipoles, and their arrays are analyzed. It is shown that dissipation is the key mechanism, responsible for the asymmetric backscattering behavior. While far-field scattering can serve as a sufficient loss mechanism in the case of single structures, ohmic dissipation should be added in the case of periodic arrays (metasurfaces). In this case, the practical realization is based on split-ring resonators, loaded with resistance, and wires, both printed on a PC board. 10.18721/JPM.153.369 537.86 metasurfaces metamaterials scattering asymmetric responses https://physmath.spbstu.ru/article/2022.60.69/

CNF RUS 354-359 Dmitriev Roman Rusher.official@gmail.com Grevtseva Anna annagrevtseva@mail.ru Davydov Vadim davydov_vadim66@mail.ru Features of microwave excitation signal formation in a quantum frequency standard The necessity of upgrading the quantum frequency standard based on rubidium-87 atoms is substantiated. So in the design of quantum frequency standards, individual blocks are mainly upgraded. A solution is proposed to improve the design of the rubidium frequency standard. A block diagram of the part of the standard that is being upgraded is presented. The results of mathematical modeling of the output characteristics of the frequency converter are presented. A forecast of improvement of the metrological characteristics of the quantum frequency standard is obtained. 10.18721/JPM.153.370 537.86 quantum frequency standard rubidium standard satellite navigation systems phase locked loop https://physmath.spbstu.ru/article/2022.60.70/

CNF RUS 360-364 Medvedeva Svetlana ss_medvedeva@itmo.ru Gaidash Andrei andrei_gaidash@itmo.ru Miroshnichenko George gpmiroshnichenko@itmo.ru Kiselev Alexei adkiselev@itmo.ru Kozubov Anton avkozubov@itmo.ru Dynamics of the uncertainty value of quadratures for bosonic quantum states In this work we consider the time evolution of the mean values of the first and second moments of the quadrature operators for an arbitrary bosonic quantum state in a single mode transmitted through an optical fiber channel. We utilize the density matrix formalism and the open quantum systems theory and investigate Lindblad master equation in order to derive expressions for the dynamics of mentioned field observables. Obtained expressions contain terms characterized by high frequency oscillations. For the purpose of elimination of these terms we find the envelope functions for the values of the first and second moments of the quadrature operators. 10.18721/JPM.153.371 535.14 quantum optics open quantum systems theory quadratures single mode https://physmath.spbstu.ru/article/2022.60.71/

CNF RUS 365-370 Petrov Ivan i.petrov@goqrate.com Menskoy Daniil d.meskoy@goqrate.com Tayduganov Andrey a.tayduganov@goqrate.com Phase-time-encoding MDI QKD tolerant to detector imperfections Measurement-device-independent quantum key distribution (MDI QKD) allows to eliminate the single-photon detector (SPD) vulnerabilities, increase the communication distance limits, and construct a multiple users key distribution network. Nevertheless, detector imperfections are able to decrease the secret key rate and maximum distance by orders of magnitude. In this work we propose a model of large SPD’s dead time for the phase-time-encoding MDI QKD. We also propose a modified measurement device (Charlie) scheme with four detectors which is able to partially restore the sifted key loss caused by dead time. 10.18721/JPM.153.372 530.145 quantum cryptography MDI QKD single-photon detector dead time https://physmath.spbstu.ru/article/2022.60.72/

CNF RUS 371-375 Kryzhanovskaya Natalia V. Natalia nkryzhanovskaya@hse.ru 0000-0003-3686-935X National Research University “Higher School of Economics” (St. Petersburg branch) Moiseev Eduard emoiseev@hse.ru Dragunova Anna anndra@list.ru Maximov Mikhail maximov @beam.ioffe.ru Mintairov Sergei mintairov@scell.ioffe.ru Kalyuzhniy Nikolai nickk@mail.ioffe.ru Zubov Fedor fzubov@hse.ru Kulagina Marina M. Marina.Kulagina@mail.ioffe.ru Guseva Yulia Guseva.Julia@mail.ioffe.ru Lihachev Alexey lihachev_alexey@bk.ru 35379962200 Ioffe Physical Technical Institute of the Russian Academy of Sciences Zhukov Alexey zhukov@beam.ioffe.ru

Russia, 194021, St.Petersburg, Polytechnicheskaya 26

Integrated optical transceiver based on III-V microdisk laser and photodiode In this work, we study III-V p-i-n photodetectors and disk microlasers in terms of their static and small-signal modulation frequency response. InGaAs/GaAs quantum welldots (QWDs) are used as the active region of the devices to provide operation wavelength around 1.1 µm, high optical and frequency response and temperature stability of characteristics. 30 µ m-in-diameter microdisk lasers revealed CW output power level of 15–22 mW and error-free 10 Gbit/s data transmission at 30 ºC without temperature stabilization. The microdisk laser and the p-i-n photodiode were heterogeneously integrated on a silicon substrate by Au-Au thermocompression bonding to form a compact transceiver. Detection of microlaser emission by the closely placed p-i-n photodiode is studied. The absolute value of the responsivity of the waveguide detector as high as 0.68 A/W for the unbiased device is demonstrated. The efficiency of the optical link at the level of 1.4% is achieved. Approaches to obtain higher efficiency of the optical link are discussed. 10.18721/JPM.153.373 538.9 microdisk laser waveguide detector transceiver quantum well-dots https://physmath.spbstu.ru/article/2022.60.73/

CNF RUS 376-380 Uvarov Ilia i.v.uvarov@bk.ru Federal State Budgetary Institution of Science K.A. Valiev Institute of Physics and Technology of the RAS Yaroslavl Branch Shlepakov Pavel p.shlepakov@bk.ru

Yaroslavl, Russian Federation

Abramychev Andrey irumiantsieva@bk.ru Svetovoy Vitaliy svetovoy@yandex.ru Fabrication of a micropump based on the fast electrochemical actuator with the PDMS membrane Microfluidic systems can deliver drugs to a human body in small accurate doses. For this purpose, they have to be equipped by a compact, energy-efficient and microtechnology-compatible pump. A recently proposed micropump based on the fast electrochemical actuator meets these requirements. It contains three actuators operating in a peristaltic manner. The first version of the pump was not completely functional due to the shortcomings of the fabrication process. In this work, we proposed a modified technological route. The flexible membranes of the actuators are made of polydimethylsiloxane (PDMS) instead of SiNx, which increases the fabrication yield. The route includes the  formation of the PDMS membrane on a polyester film and two steps of bonding of the membrane to a photoresist SU-8, which are the most critical operations. Details of the fabrication process are reported and optimal bonding conditions are found. 10.18721/JPM.153.374 53.06 microfluidics micropump electrochemical actuator nanobubbles bonding https://physmath.spbstu.ru/article/2022.60.74/

CNF RUS 381-385 Khakimova Anastasia konduktorova.anastasiya@gmail.com Pominov Vladislav vladislav.razer@mail.ru Babicheva Tatyana tatyana.babicheva.1993@mail.ru Shmakov Sergey ShmakovSL@mail.ru Zakharevich Andrei lab-15@mail.ru Shipovskaya Anna Shipovskayaab@yandex.ru TEM use for the study of chitosan microspheres and nanospheres obtained from its salts with several acids Aminopolysaccharide-containing dispersed systems were obtained by coacervation based on a water–oil emulsion of a chitosan solution in glycolic or tartaric acid (a salt water-soluble form of the polymer) followed by neutralization of the salt form of the polymer with triethanoamine. Morphology was studied and the size of dispersed chitosan particles was estimated by the methods of transmission electron and polarization microscopy. The spherical shape of the solid-phase constituent of the dispersed system was established, whose size varied from 50 nm to 115 μm. The influence of the acid nature on the morphological structure, size and fineness of the formed chitosan-containing particles is shown. The disperse system formed using glycolic acid was unstable. The use of tartaric acid was found to contribute to the stabilization of a highly dispersed system. The effect of the component ratio of the dispersed system on the morphology and size of spherical chitosan-containing structures was studied. 10.18721/JPM.153.375 544.344.015.22 transmission electron microscopy polarizing microscopy chitosan microspheres nanospheres chitosan tartrate chitosan glycolate https://physmath.spbstu.ru/article/2022.60.75/