The effect of Ar+ and Cd+ ion implantation and subsequent thermal annealing has been studied on a single-crystal ZnTe (111) using a whole range of spectroscopy methods: ultraviolet photoelectron one (UPS), light absorption one, and Auger electron one (AES). The results showed that bombardment of the surface with Ar+ and Cd+ ions with an energy of E0 = 1 keV until a saturation dose of of Dsat = (6–8)·1016cm−2 was reached resulted in the destruction of the crystal structure of the ion-implanted layers and, as a consequence, in surface metallization. In particular, after implantation with Cd+ ions and subsequent annealing at T = 850 K, the formation of a homogeneous continuous Zn0.5Cd0.5Te film 30–35 Å thick was observed, which indicated the redistribution of components and the formation of a new phase state on the ZnTe surface. The results of the study of Zn0.5Cd0.5Te thin films demonstrate the presence of two clearly defined maxima in the valence electron spectra corresponding to binding energies of −1.4 eV and −5.2 eV.