In the paper, the findings of study the memristor based on n-GaN nanowires synthesized on silicon by the molecular beam epitaxy with SiN and AlN interface layers have been presented. The polarity inversion of writing voltage was found to depend on the interface preparation method. In addition, it was discovered by the capacitive measurements that after the logical state write operation, the structure capacitance decreased when using the SiN layer while it increased when using the AlN one. In this case, a difference was observed in the behavior of the subsequent relaxation of the capacitance.