We present a study of the growth and optical properties of an embedded InGaN/GaN superlattice in nanowires. Nitride nanowires with embedded superlattice were grown by molecular beam epitaxy on a silicon substrate. The optical properties of the resulting nanostructures were studied using low-temperature photoluminescence. Photoluminescence spectrum of InGaN/GaN superlattice exhibits two distinct emission bands. These bands correspond to the radiation from the different parts of the InGaN insertions. The second band in the photoluminescence spectrum is associated with the penetration of In into the GaN barrier.