We study the processes of site-controlled growth of InAs quantum dots (QDs) on GaAs(111)B surfaces patterned by focused ion beams (FIB). The QDs tend to occupy vertexes of the pyramidal holes formed after annealing of the FIB-treated surfaces. The average degree of localization of QDs is found to strongly depend on the number of FIB passes and has a maximum value of 0.84, 0.7 and 0.92 for arrays with a distance of 2, 1 and 0.5 μm between holes, respectively. The average size and surface density of QDs also depends on the number of FIB passes, mainly with a non-monotonic nature. Photoluminescence emission of InAs QDs grown on the GaAs(111)B surface is observed in the spectral range of 950–1150 nm at a measurement temperature of 77 K.