The article is devoted to the study of the length of the 2×N superstructure during epitaxial growth of Ge on Si(001) at different synthesis temperatures in the range from 200 °C to 750 °C. The analysis took place during the growth process by reflection high-energy electron diffraction in the direction of [110]. The work makes it possible to evaluate the effectiveness of elastic stress relief due to 2×N at the initial stages of growth over a wide temperature range.