A remarkable increase in photoluminescence intensity for passivated mesa structures with InGaAs/GaAs quantum wells were demonstrated using the method of sol-gel SiO2 passivation. The photoluminescence signal enhancement up to 50 times for 1.25 μm diameter mesas after passivation was observed. The obtained results are promising for use in microlasers with active region based on InGaAs quantum wells.