St. Petersburg Polytechnic University Journal: Physics and Mathematics Научно-технические ведомости СПбГПУ. Физико-математические науки 2304-9782, 2618-8686, 2405-7223 42 10.18721/JPM.183.142 Optical properties of disk microresonators based on wide-bandgap III-N materials Оптические свойства дисковых микрорезонаторов на основе широкозонных III-N материалов 0000-0002-7025-3527 Komarov Sergey serega.komarow@mail.ru Vainilovich Alexey a.vainilovich@ifanbel.bas-net.by 0009-0007-9304-6401 Grigorii Grigorii gafeygin@edu.hse.ru Sakharov Alexey val@beam.ioffe.rssi.ru Nikolaev Andrei Aen@mail.ioffe.ru Ivanov Konstantin kivanov@hse.ru 0000-0003-3686-935X Moiseev Eduard emoiseev@hse.ru Kryzhanovskaya Natalia V. Natalia nkryzhanovskaya@hse.ru Nikitina Ekaterina mail.nikitina@mail.ru Tsatsulnikov Andrey andrew@beam.ioffe.ru Lutsenko Eugeniy e.lutsenko@ifanbel.bas-net.by 35379962200 Zhukov Alexey zhukov@beam.ioffe.ru National Research University “Higher School of Economics” National Research University “Higher School of Economics” (St. Petersburg branch) Ioffe Physical Technical Institute of the Russian Academy of Sciences 10 12 2025 18 3.1 209 213

Fabrication, optical study, and mode modeling of III-N microdisk resonators with InGaN/GaN quantum wells on Al2O3 are presented. It is shown that the created epitaxial structures have high optical quality, and the microresonators support high-Q whispering gallery modes.

 III-N WGM microresonators InGaN/GaN quantum wells microdisk lasers