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<!DOCTYPE article PUBLIC "-//NLM//DTD JATS (Z39.96) Journal Publishing DTD v1.3 20210610//EN" "https://jats.nlm.nih.gov/publishing/1.3/JATS-journalpublishing1-3.dtd">
<article article-type="meeting-report" dtd-version="1.3" xml:lang="en">
  <front xmlns:xlink="http://www.w3.org/1999/xlink">
    <journal-meta>
      <journal-title-group>
        <journal-title>St. Petersburg Polytechnic University Journal: Physics and Mathematics</journal-title>
        <trans-title-group xml:lang="ru">
          <trans-title>Научно-технические ведомости СПбГПУ. Физико-математические науки</trans-title>
        </trans-title-group>
      </journal-title-group>
      <issn pub-type="epub">2304-9782, 2618-8686, 2405-7223</issn>
    </journal-meta>
    <article-meta xmlns:xlink="http://www.w3.org/1999/xlink">
      <article-id pub-id-type="publisher-id">37</article-id>
      <article-id pub-id-type="doi">10.18721/JPM.183.137</article-id>
      <title-group>
        <article-title>Technological process of manufacturing a gas-sensitive multisensor chip based on a passivating coating of zinc oxide nanorods obtained by thin-film technology</article-title>
        <trans-title-group xml:lang="ru">
          <trans-title>Технологический процесс изготовления газочувствительного мультисенсорного чипа на основе пассивирующего покрытия наностержней оксида цинка, полученных по тонкопленочной технологии</trans-title>
        </trans-title-group>
      </title-group>
      <contrib-group>
        <contrib contrib-type="author">
          <name>
            <surname>Shepeleva</surname>
            <given-names>Anastasia</given-names>
          </name>
          <email>eduard.shepelev.67@mail.ru</email>
        </contrib>
        <contrib contrib-type="author">
          <contrib-id contrib-id-type="orcid">0000-0001-9602-7221</contrib-id>
          <name>
            <surname>Gurin</surname>
            <given-names>Sergey</given-names>
          </name>
          <xref ref-type="aff" rid="aff1"/>
        </contrib>
        <contrib contrib-type="author">
          <contrib-id contrib-id-type="orcid">0000-0001-9319-2475</contrib-id>
          <name>
            <surname>Novichkov</surname>
            <given-names>Maksim</given-names>
          </name>
          <xref ref-type="aff" rid="aff1"/>
        </contrib>
        <contrib contrib-type="author">
          <contrib-id contrib-id-type="orcid">0009-0009-4548-3724</contrib-id>
          <name>
            <surname>Agafonov</surname>
            <given-names>Dmitriy</given-names>
          </name>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Pecherskaya</surname>
            <given-names>Ekaterina</given-names>
          </name>
          <email>pea1@list.ru</email>
        </contrib>
        <contrib contrib-type="author">
          <contrib-id contrib-id-type="orcid">0009-0005-5656-4918</contrib-id>
          <name>
            <surname>Zuev</surname>
            <given-names>Vyacheslav</given-names>
          </name>
          <xref ref-type="aff" rid="aff1"/>
        </contrib>
      </contrib-group>
      <aff id="aff1">Research Institute of Electronic and Mechanical Devices</aff>
      <pub-date publication-format="electronic" date-type="pub" iso-8601-date="2025-12-10">
        <day>10</day>
        <month>12</month>
        <year>2025</year>
      </pub-date>
      <volume>18</volume>
      <issue>3.1</issue>
      <fpage>187</fpage>
      <lpage>190</lpage>
      <self-uri xmlns:xlink="http://www.w3.org/1999/xlink" content-type="pdf" xlink:href="https://physmath.spbstu.ru/userfiles/files/articles/2025/3.1/37_187-190_18(3_1)2025.pdf"/>
      <abstract xml:lang="en">
        <p>A method for manufacturing a gas-analytical multisensor chip is presented. The technological process of manufacturing with an additional SiO2 layer is described. It was found
that the design of the experimental sample of the multisensor chip and the technology of synthesis of low-dimensional gas-sensitive layers provide sensitivity to detected gases up to 1 ppm and allow to increase the speed and temporal stability.</p>
      </abstract>
      <kwd-group xml:lang="en">
        <kwd>gas-sensitive layer</kwd>
        <kwd>dopant</kwd>
        <kwd>response time</kwd>
        <kwd>recovery time</kwd>
        <kwd>technological process</kwd>
      </kwd-group>
    </article-meta>
  </front>
</article>
