A series of experiments were conducted to develop the plasma etching of black silicon through a layer of polydimethylglutarimide (PMGI) photoresist. The silicon wafers were previously subjected to wet-chemical treatment. A ~25 nm thick photoresist layer facilitates the process of creating regular black silicon structures on substrates with a diameter of 100 mm. The etching process was varied in terms of the sulfur hexafluoride (SF6) and oxygen (O2) gas mixture ratio, RF power applied to the substrate holder (bias power), inductively coupled plasma (ICP) power and chamber pressure. Increasing the bias power from 10 to 30 W under otherwise constant conditions enhances the etching rate. Reducing the pressure in the reactor from 10 to 5 mTorr at a constant gas flow rate leading to a higher etching rate. Increasing the proportion of oxygen in the SF6/O2 gas mixture (2:1) enhances passivation, reducing the black silicon structures size.