St. Petersburg Polytechnic University Journal: Physics and Mathematics

Научно-технические ведомости СПбГПУ. Физико-математические науки

2304-9782, 2618-8686, 2405-7223

10.18721/JPM.183.127

Optical reflectance spectroscopy for barrier thickness measurement of AlGaN/GaN heterostructures: comparison with X-ray reflectometry

Измерение толщины барьерного слоя в гетероструктурах AlGaN/GaN методом спектроскопии оптического отражения: сравнение с рентгеновской рефлектометрией

Arteev

Dmitri

ArteevDS@mail.ioffe.ru Sakharov

Alexey

val@beam.ioffe.rssi.ru Nikolaev

Andrei

Aen@mail.ioffe.ru Zavarin

Evgenii

EZavarin@mail.ioffe.ru

0000-0002-2793-5717

Filimonov

Alexey

filimonov@rphf.spbstu.ru Tsatsulnikov

Andrey

andrew@beam.ioffe.ru

Peter the Great St. Petersburg Polytechnic University

10 12 2025

18 3.1 143 147

This study evaluates optical reflectance (OR) spectroscopy as a rapid, cost-effective alternative to X-ray reflectometry (XRR) for measuring the thickness of the AlGaN barrier layer in AlGaN/GaN heterostructures. OR spectroscopy demonstrated excellent agreement with XRR, with deviations not exceeding 1 nm. The results highlight OR spectroscopy as an efficient and reliable method for routine characterization of GaN-based heterostructures.

gallium nitride AlGaN/GaN heterostructure optical reflectance spectroscopy X-ray reflectance