Passivation of the photosensitive surface of germanium and gallium antimonide with amorphous and polycrystalline silicon has been carried out. Using the passivating Si-films, the laser radiation converters for a wavelength of λ ~ 1550 nm are developed and manufactured. The proposed method allows developing the converters with high values of output parameters and shortens the technological cycle compared to two-stage diffusion into an open surface.