The planar microcavity structure based on non-absorbing Al0.2Ga0.8As/Al0.9Ga0.1As mirrors was fully fabricated by molecular-beam epitaxy. Usage of In0.63Ga0.37As quantum dots reveals room temperature emission near 1110 nm  with emission bandwidth of about 80 meV. The determined spectral mismatch between peak position of gain region and reflectivity spectrum dip was about 115 meV at 290 K. The shift of the reflectance dip position along the whole wafer surface was less than 15 meV. The determined by defect inspection root mean square surface roughness was less than 1.3 nm for studied 8 μm thick planar microcavity structure.