St. Petersburg Polytechnic University Journal: Physics and Mathematics

Научно-технические ведомости СПбГПУ. Физико-математические науки

2304-9782, 2618-8686, 2405-7223

10.18721/JPM.171.110

Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy

Исследование зонной структуры гетероструктур GeSiSn/Ge/Si методом инфракрасной фурье-спектроскопии фотоотражения

Chumanov

Ivan

chumanov2000@yandex.ru Firsov

Dmitrii

d.d.firsov@gmail.com Kolyada

Dmitry

Komkov

Oleg

oleg_sergeevich@mail.ru Skvortsov

Ilya

i.skvortsov@isp.nsc.ru Mashanov

Vladimir

mash@isp.nsc.ru Timofeev

Vyacheslav

Vyacheslav.t@isp.nsc.ru

St. Petersburg Electrotechnical University "LETI" Rzhanov Institute of Semiconductor Physics Siberian Branch of RAS

29 05 2024

17 1.1 62 67

The work demonstrates the use of photomodulation FTIR spectroscopy to study structures containing epitaxial layers of GeSn and GeSiSn in the temperature range of 79–180 K. The photoreflectance method has enabled observation of direct interband transitions, and evaluation of the impact of temperature variation and mechanical strain on their energy values.

semiconductors solid solutions FTIR spectroscopy photoreflectance method heterostructures silicon epitaxy