In the paper, the effects of type, dose and temperature of irradiation with stable elementary particles (0.9 MeV electrons and 15 MeV protons) on the properties of the high-voltage 4H-SiC Junction Barrier Schottky diodes at room temperature (23°С) and the limiting operating one (175°С) have been compared. The electron irradiation of the objects with equal doses at 23°С и 175°С was found to cause a significant increase in its base differential resistance in the former case and the absence of this effect in the latter. However, in the latter, DLTS spectra exhibited a noticeable increase in the concentration of deep levels in the upper half of the band gap. The proton irradiation resulted in a noticeable rise in the mentioned resistance even at 175°С. The results obtained make it possible to evaluate the radiation resistance of the studied devices to proton and electron irradiation within the framework of any given requirements.