This article presents a study of the growth of boron phosphide (BP) thin films by plasma enhanced chemical vapor deposition (PECVD) and its optical properties. BP thin films were deposited on a fused silica and silicon substrates using a mixture of diborane (B2H6) and phosphine (PH3) with hydrogen as precursors. The optical properties were investigated using optical spectroscopy, which showed excellent optical transparency in the visible and near-infrared regions. The BP films exhibited a bandgap of approximately 1.9 eV, indicating its potential for use in optoelectronic applications. The results demonstrate that PECVD is a promising technique for growing BP thin films with desirable optical properties.