St. Petersburg Polytechnic University Journal: Physics and Mathematics Научно-технические ведомости СПбГПУ. Физико-математические науки 2304-9782, 2618-8686, 2405-7223 41 10.18721/JPM.163.141 Modeling the characteristics of avalanche photodiodes based on Ge/Si Моделирование характеристик лавинных фотодиодов на основе Ge/Si Khomyakova Kristina homiackowa.kristina@yandex.ru Deeb Hazem deeb.hazem.syr@gmail.com 0000-0002-4029-8353 Lozovoy Kirill Kokhanenko Andrey kokh@mail.tsu.ru National Research Tomsk State University 29 11 2023 16 3.1 232 236

In this article, the planar structure of an avalanche photodiode based on Ge/Si is designed. The dependences of the gain and bandwidth on the bias voltage for different thicknesses of the absorption and multiplication layers of an avalanche photodiode based on Ge/Si are presented.

 optoelectronics avalanche photodiode impact ionization planar structure gain-bandwidth product