St. Petersburg Polytechnic University Journal: Physics and Mathematics Научно-технические ведомости СПбГПУ. Физико-математические науки 2304-9782, 2618-8686, 2405-7223 19 10.18721/JPM.163.119 Mg2Si film on Si(111) prepared by Ultra-Fast Mg reactive deposition: crystal structure and thermoelectric properties Пленка Mg2Si на Si(111), полученная методом сверхбыстрого реактивного осаждения Mg: структура и термоэлектрические свойства 0000-0002-8726-9832 Chernev Igor igor_chernev7@mail.ru Subbotin Evgenii jons712@mail.ru Argunov Efim efim.argunov@mail.ru Kozlov Aleksei kozlov.ag@dvfu.ru Gerasimenko Andrey gerasimenko@ich.dvo.ru 0000-0003-4127-2988 Galkin Nikolay galkin@iacp.dvo.ru Poliakov Maxim Volkova Lidiya lidiya.volkova.96@mail.ru Dudin Alexander dudin.a@inme-ras.ru Gouralnik Alexander fun_era@mail.ru Institute of Automation and Control Processes, Far Eastern Branch of the RAS National Research Technological University (MISiS) Институт наукоемких технологий и передовых материалов ДВФУ Institute of Chemistry FEB RAS Institute of Nanotechnologies of Microelectronics of the RAS 29 11 2023 16 3.1 106 111

The Mg2Si film (~ 800 nm thick) was grown by pulsed reactive deposition of Mg on Si(111) at 340 °C in UHV. Structural investigations by XRD, SEM and cross-sectional x-HRTEM demonstrate high crystal quality and 100% texture of the film. Thermoelectric properties of the Mg2Si film are characterized within 290–470 K. The film conductivity changes from p-type below 309 K to n-type at higher temperatures. The power factor is 0.27 mW/m×K2 at 470 K. The p-type conductivity can be associated with presence of oxygen or/and vacancies (VMg, VMg2Si).

 magnesium silicide silicon films epitaxy reactive epitaxy pulsed deposition crystal structure microscopy transport properties Seebeck coefficient power factor