The regularities of the influence of initial substrate orientation and annealing conditions on the intensity and temperature dependence of the D1 luminescence line for the p-type silicon samples implanted with silicon ions followed by subsequent annealing are studied. It is shown that the luminescent properties of the samples depend both on surface orientation and on annealing temperature. For a silicon sample with (111) surface orientation, under certain heat  treatment conditions, an anomalous temperature dependence of the D1 line intensity is demonstrated with the appearance of a second maximum in this dependence at temperatures of about 80 K.