We have optimized the growth parameters of the buffer layer for further Pb1-xSnxTe (x ≥ 0.4) deposition from the point of view of smoothness and crystalline quality. The latter has the properties of a crystalline topological insulator. A  three-component heterostructure consisting of fluorite CaF2, BaF2, and cubic Pb0.7Sn0.3Te:In layers was formed on the Si(111). The surface morphology of this hybrid heterostructure was studied depending on the growth  temperature and the thickness.