In the paper, the results of the studies in the electrical and optoelectronic properties of vertical sheets made of MoS2 have been presented for the first time. These objects are characterized by a high surface area, exposed edges, reasonable carrier mobility values and high light absorptance. Samples with an average size of about 150 nm were grown by the one-stage metal-organic chemical vapor deposition (MOCVD) technique. Vertically oriented MoS2 sheets were investigated using the scanning electron and X-ray photoelectron microscopy, the X-ray diffraction and Raman spectroscopy. I-V characteristics of the samples were obtained as well. Optoelectronic properties of the samles were studied using an argon laser (operates at a wavelength of 513 nm) with a mechanical light modulator. An analysis of the obtained results allows us to state that the studied V-MoS2 sheets should be considered as a very promising material for optoelectronics needs.