The effect of different types of natural nonuniformities of the semiconductor surface on the characteristics of the surface resonance scattering of electrons at intermediate energies has been considered. Analysis was conducted both for the case of the nonpolarized particles and for the polarized electrons. It was shown that the processes of resonance surface scattering were sensitive to nonuniformities of surface potential. Therefore with a study of surface resonances in the general case it is also necessary to consider the effects of natural nonuniformities on the observed dependences and results.