St. Petersburg Polytechnic University Journal: Physics and Mathematics

Научно-технические ведомости СПбГПУ. Физико-математические науки

2304-9782, 2618-8686, 2405-7223

The features of defect formation in silicon under molecular ion bombardment

Особенности образования дефектов в кремнии при бомбардировке молекулярными ионами

https://orcid.org/0000-0003-2511-0188

10041592700

P-6861-2015

Karaseov

Platon

platon.karaseov@spbstu.ru

0000-0003-1770-1877

Karabeshkin

Konstantin

Санкт-Петербургский политехнический университет Петра Великого Peter the Great St. Petersburg Polytechnic University

10 09 2012

153

64 70

Molecular effect in silicon under molecular ion bombardment over a wide energy range is described. Physical mechanisms for explanation of this phenomenon are suggested. Results of experimental studies and computer simulation of processes occurred in Si under Р+ and PF+4. ion bombardment are presented.

ion implantation silicon molecular effect collision cascade computer simulation