CuPtB ordered AlGaInP2 alloys grown on GaAs by MOVCD epitaxy were studied by structural (X-ray diffraction, electron microscopy), optical (photoluminescence) and Kelvin probe microscopy methods. A strong dependence of the layer surface potential on the alloy composition was found. The effect of martensitic transition in the ordered AlGaInP2 layers was found to be in connection with the alloy composition: higher Al concentrations lead to an increase of the piezoelectric field changes and shorter recovery time (relaxation) of the layers after mechanical effect (cleavage).