This study presents the fabrication of ultraviolet metal-semiconductor-metal photodetectors based on ultrathin epitaxial layers GaN grown on sapphire substrates. The devices were characterized through current-voltage measurements and sensitivity and noise characteristics calculations. At a bias voltage of 1 V, the PDs demonstrated a responsivity of 156 mA·W–1 and a noise-equivalent power of 0.4·10–22 W·Hz–0.5, which highlight their highsensitivity and low-noise performance.