The prospects for creating heterostructures based on ferroelectric materials have been studied. The most suitable technological parameters for forming these structures have been identified. A detailed analysis of the crystalline structure of the obtained ferroelectric films has been carried out. It has been established that at the moment of deposition, when creating thin-film multilayer systems with a temperature of the sensitive element (SE) above 700 °С, the perovskite layer loses its ferroelectric characteristics.