Plasmonic nanolasers based on semiconductor nanowires are presently attracting wide interest due to the breaking in the light diffraction limit and the deep subwavelength mode operation. In this work, we synthesize and investigate the optical properties of GaN nanowires with InGaN quantum wells as the core element of plasmonic nanolasers. The results of modeling the electric field intensity distribution for propagating modes and dispersion curve of surface plasmon polaritons in the studied nanowires placed on the AlOх-coated atomically flat Ag film confirm the formation of hybrid plasmonic modes and the viability of these structures for subwavelength light confinement and nanolaser applications.