In this work we present the experimental results on the molecular-beam epitaxy growth of wurtzite AlGaAs nanowires with nanoscale zinc-blende insertions on silicon substrate. Structural characterization confirmed the formation of zinc-blende nanoscale segments within the wurtzite nanowire matrix. Autocorrelation function measurements for emission at 710 nm have shown the characteristic dip at zero time delay, which indicates that the synthesized nanostructures are sources of single photons.