The photoluminescence spectra of short-period InGaAs/InAlAs superlattices emitting in the 1.3 µm spectral range were investigated in the wide range of pumping powers at the temperatures of 5−300 K. The 5 K photoluminescence spectra consisted of luminescence bands associated with radiative electron-hole recombination in superlattices as well as in the InP substrate and buffer layers of heterostructures. Spectral positions of superlattice emission bands are in a good agreement with calculated values obtained with transfer matrix method for all the samples. The temperature evolution of emission spectra was investigated as well.