In the paper, the upgraded technology of forming the epitaxial arrays of InAsP nanowires (NWs) synthesized on silicon substrates using molecular beam epitaxy has been presented. The optical and electrophysical properties of the NWs were studied. Based on the grown structures, a prototype of a short-wave infrared photodiode for a range from 1.2 µm to 1.9 µm was fabricated. Its band structures were numerically simulated. The temperature dependencies of the current-voltage characteristics and the spectral sensitivity of the photodetector prototype based on the NWs were experimentally studied. The external quantum efficiency of photoconversion of radiation with a wavelength of 1380 nm was found to be about 0.25% at 100 K.