This work presents a method for evaluating the specific emission intensity of carbon dots (CDs) on the surface of epitaxial GaP, GaN and etched Si nanowires (NWs) using confocal fluorescence microscopy. The obtained results  characterize GaP NWsbased hybrid structures as exhibiting the highest specific emission intensity under unified CDs deposition algorithm. The interaction model between CDs and the NWs surface is investigated and the influence of  the NWs crystalline structure on the photoluminescence of CDs is analyzed. The results are of interest for the synthesis of hybrid light-emitting structures whose properties can be controlled by varying the NWs material, structure,  and geometry.