We investigate the effects of resonant tunneling of the charge carriers of the Г8 zone in the GaAs/AlAs heterostructure within the framework of the effective mass method, taking into account complex character of the valence band dispersion law. The problem is solved by introducing Green’s function with parametric dependence on energy within the biorthogonal formalism of quantum theory. The effects imposed by the spin state of holes, as well as the effect of short-range interface corrections, are investigated.