This research is devoted to study of the photosensitive properties of gallium phosphide epitaxial nanowires (NWs) decorated with carbon dots (CDs). The deposition of CDs facilitates the development of a new functional GaP/CDs material with electronic and optical characteristics distinct from those of the original pristine NWs. The photosensitivity of GaP NWs, both before and after the decoration, was assessed by analyzing their I-V characteristics and impedance spectra when subjected to light irradiation of ultraviolet (UV), visible, and infrared (IR) ranges. The findings reveal a significant photoresistive response of pristine GaP NWs when exposed to UV and blue light (390 nm and 470 nm wavelengths, correspondingly). In contrast, GaP NWs / CDs heterostructures exhibit a spectrally broader photoresistive response to light irradiation within the wavelength range of 390 to 850 nm. The results of this study highlight the potential use of the developed functional nanomaterial for fabricating photodetectors capable of operating across a wide spectral range, utilizing a relatively simple fabrication protocol.