<?xml version="1.0" encoding="utf-8"?>
<!DOCTYPE article PUBLIC "-//NLM//DTD JATS (Z39.96) Journal Publishing DTD v1.3 20210610//EN" "https://jats.nlm.nih.gov/publishing/1.3/JATS-journalpublishing1-3.dtd">
<article article-type="research-article" dtd-version="1.3" xml:lang="ru">
  <front xmlns:xlink="http://www.w3.org/1999/xlink">
    <journal-meta>
      <journal-title-group>
        <journal-title>St. Petersburg Polytechnic University Journal: Physics and Mathematics</journal-title>
        <trans-title-group xml:lang="ru">
          <trans-title>Научно-технические ведомости СПбГПУ. Физико-математические науки</trans-title>
        </trans-title-group>
      </journal-title-group>
      <issn pub-type="epub">2304-9782, 2618-8686, 2405-7223</issn>
    </journal-meta>
    <article-meta xmlns:xlink="http://www.w3.org/1999/xlink">
      <article-id pub-id-type="publisher-id">1</article-id>
      <article-id pub-id-type="doi">10.18721/JPM.16401</article-id>
      <title-group>
        <article-title>Current – voltage characteristics of MaPbI3 perovskite films formed by the single-stage spin-coat method</article-title>
        <trans-title-group xml:lang="ru">
          <trans-title>Вольтамперные характеристики перовскитных пленок MaPbI3 , сформированных одностадийным методом центрифугирования</trans-title>
        </trans-title-group>
      </title-group>
      <contrib-group>
        <contrib contrib-type="author">
          <contrib-id contrib-id-type="orcid">0009-0009-6273-1478</contrib-id>
          <name>
            <surname>Ovezov</surname>
            <given-names>Maksat</given-names>
          </name>
          <xref ref-type="aff" rid="aff1"/>
        </contrib>
        <contrib contrib-type="author">
          <contrib-id contrib-id-type="orcid">0000-0001-9626-7612</contrib-id>
          <name>
            <surname>Ryabko</surname>
            <given-names>Andrey</given-names>
          </name>
          <xref ref-type="aff" rid="aff2"/>
        </contrib>
        <contrib contrib-type="author">
          <contrib-id contrib-id-type="orcid">0000-0001-5449-4446</contrib-id>
          <name>
            <surname>Aleshin</surname>
            <given-names>Andrey</given-names>
          </name>
          <xref ref-type="aff" rid="aff2"/>
          <email>aleshin@transport.ioffe.ru</email>
        </contrib>
        <contrib contrib-type="author">
          <contrib-id contrib-id-type="orcid">0000-0001-6500-5492</contrib-id>
          <name>
            <surname>Moshnikov</surname>
            <given-names>Vyacheslav</given-names>
          </name>
          <xref ref-type="aff" rid="aff3"/>
          <email>vamoshnikov@mail.ru</email>
        </contrib>
        <contrib contrib-type="author">
          <contrib-id contrib-id-type="orcid">0000-0002-3469-5897</contrib-id>
          <name>
            <surname>Kondratev</surname>
            <given-names>Valeriy</given-names>
          </name>
          <xref ref-type="aff" rid="aff4"/>
          <email>kvm_96@mail.ru</email>
        </contrib>
        <contrib contrib-type="author">
          <contrib-id contrib-id-type="orcid">0000-0003-0195-8870</contrib-id>
          <name>
            <surname>Maximov</surname>
            <given-names>Alexander</given-names>
          </name>
          <xref ref-type="aff" rid="aff5"/>
          <email>aimaximov@mail.ru</email>
        </contrib>
      </contrib-group>
      <aff id="aff1">Ioffe Institute of RAS</aff>
      <aff id="aff2">Ioffe Institute</aff>
      <aff id="aff3">St. Petersburg Electrotechnical University "LETI"</aff>
      <aff id="aff4">Alferov University</aff>
      <aff id="aff5">Санкт-Петербургский государственный электротехнический университет «ЛЭТИ» имени В. И. Ульянова (Ленина)</aff>
      <pub-date publication-format="electronic" date-type="pub" iso-8601-date="2023-12-31">
        <day>31</day>
        <month>12</month>
        <year>2023</year>
      </pub-date>
      <volume>16</volume>
      <issue>4</issue>
      <fpage>9</fpage>
      <lpage>19</lpage>
      <self-uri xmlns:xlink="http://www.w3.org/1999/xlink" content-type="pdf" xlink:href="https://physmath.spbstu.ru/userfiles/files/articles/2023/4/01_9-19_16(3)2023.pdf"/>
      <abstract xml:lang="en">
        <p>In the paper, the properties of MaPbI3 films made with or without a precipitant have been investigated. The samples had a planar geometry based on ceramic substrates with interdigitated gold electrodes and also based on glass substrates. The samples were irradiated with green light from an LED source, and a special setup was used to measure current–voltage (I–V) characteristics. The polycrystalline films exhibited high sensitivity (an increase in current by about 2 orders upon irradiation). The width of their optical band gap was the same regardless of the use of the precipitant but the maximum trap-filling voltages turned out to be very sensitive to such use. According to optical microscopy, the film microstructure was characterized by a growth of large long dendritic structures, i. e., the nucleation occurred in the solution mass during the films’ making. This growth mechanism may be convenient for the use of MaPbI3 films in photodetectors.</p>
      </abstract>
      <kwd-group xml:lang="en">
        <kwd>organometallic perovskite</kwd>
        <kwd>semiconducting polymer</kwd>
        <kwd>transport mechanism</kwd>
        <kwd>solar cell</kwd>
      </kwd-group>
    </article-meta>
  </front>
</article>
