Tungsten oxide (WO3) is a transparent semiconductor material that has been extensively studied for applications in electrochromic windows. Polycrystalline thin films of p-type tungsten oxide (WO3) were deposited by spray-pyrolysis using tungsten hexachloride (WCl6) as a precursor. The technological synthesis regimes are considered and the current-voltage characteristics of the obtained coatings are constructed. Films with high porosity, high average surface roughness (67 nm) and low transparency were obtained at a deposition temperature of 280 °C. A WO3 crystal layer with peaks corresponding to the monoclinic structure was obtained after annealing at a temperature of 400 °C. Higher values of the transmission coefficient are achieved with a decrease in the molarity of the solution and with an increase in the deposition temperature.