St. Petersburg Polytechnic University Journal: Physics and Mathematics

Научно-технические ведомости СПбГПУ. Физико-математические науки

2304-9782, 2618-8686, 2405-7223

10.18721/JPM.163.120

Effect of temperature during homoepitaxial growth of Si on Si(100) on the character of reflection high-energy electron diffraction patterns

Влияние температуры при гомоэпитаксиальном росте Si на Si(100) на характер картин дифракции быстрых отражённых электронов

Kukenov

Olzhas

okukenov@mail.ru Sokolov

Arseniy

ars856570@gmail.com

0009-0008-8052-3253

Dirko

Vladimir

0000-0002-4029-8353

Lozovoy

Kirill

Kokhanenko

Andrey

kokh@mail.tsu.ru

National Research Tomsk State University

29 11 2023

16 3.1 112 116

To create high-quality nanostructures, it is important to understand the surface morphology for given growth parameters. The paper shows the effect of temperature on the ratio of intensities and periods corresponding to the growth of Si steps with different types of superstructure. The analysis was carried out in directions [100] and [110].

molecular beam epitaxy reflection high-energy electron diffraction step-flow growth of silicon homoepitaxy