Photovoltaic properties of hybrid solar cells based on poly-(3,4 ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) and Si nanowires (SiNWs) are studied. High values of the open circuit voltage (VOC) and external quantum efficiency (EQE) at short wavelength region obtained for planar solar cells indicate sufficient passivation properties of n-Si/PEDOT:PSS interface. A technology for filling SiNWs (6 µm in height and 1.7 µm in diameter) with PEDOT:PSS has been developed using G-coating. Compared with planar hybrid cell, SiNWs/PEDOT:PSS cell exhibit lower total reflectance (~ 12%) and higher EQE in the long wavelength region. It should be stressed that an increase in the PEDOT:PSS layer thickness by the combination of the G-coating and spin coating methods does not affect the short wavelength region of EQE. This fact is important for development of flexible solar cells based on SiNWs.