3C-SiC/Si (111) hybrid structures are grown by the method of coordinated atomic substitution on the boron- and phosphorus-doped Si(111) substrates. The evolution of the microstructure is analyzed in the time range of 1–40 minutes. The results show the reconstruction of the 3C-SiC (111) film at 3–5 minutes of the growth. The difference between strain in the SiC film obtained on p-Si and n-Si is shown using XRD and Raman techniques.