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<!DOCTYPE article PUBLIC "-//NLM//DTD JATS (Z39.96) Journal Publishing DTD v1.3 20210610//EN" "https://jats.nlm.nih.gov/publishing/1.3/JATS-journalpublishing1-3.dtd">
<article article-type="meeting-report" dtd-version="1.3" xml:lang="ru">
  <front>
    <journal-meta>
      <journal-title-group>
        <journal-title>St. Petersburg Polytechnic University Journal: Physics and Mathematics</journal-title>
        <trans-title-group xml:lang="ru">
          <trans-title>Научно-технические ведомости СПбГПУ. Физико-математические науки</trans-title>
        </trans-title-group>
      </journal-title-group>
      <issn pub-type="epub">2304-9782, 2618-8686, 2405-7223</issn>
    </journal-meta>
    <article-meta>
      <article-id pub-id-type="publisher-id">58</article-id>
      <article-id pub-id-type="doi">10.18721/JPM.153.358</article-id>
      <title-group>
        <article-title>Optimizing deposition regimes to fabricate vanadium dioxide film for active metasurfaces</article-title>
        <trans-title-group xml:lang="ru">
          <trans-title>Оптимизация режимов осаждения пленки диоксида ванадия для активных метаповерхностей</trans-title>
        </trans-title-group>
      </title-group>
      <contrib-group>
        <contrib contrib-type="author">
          <name>
            <surname>Kutepov</surname>
            <given-names>Maxim</given-names>
          </name>
          <email>kutepov.max@yandex.ru</email>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Domaratskiy</surname>
            <given-names>Ivan</given-names>
          </name>
          <email>Domaratskiy@phystech.edu</email>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Zhukov</surname>
            <given-names>Sergey</given-names>
          </name>
          <email>zhukov.ss@mipt.ru</email>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Kaidashev</surname>
            <given-names>Evgeni</given-names>
          </name>
          <email>emkaydashev@sfedu.ru</email>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Lisnevskaya</surname>
            <given-names>Inna</given-names>
          </name>
          <email>liv@sfedu.ru</email>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Abdulvakhidov</surname>
            <given-names>Kamaludin</given-names>
          </name>
          <email>kgabdulvahidov@sfedu.ru</email>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Kaydashev</surname>
            <given-names>Vladimir</given-names>
          </name>
          <email>kaydashev@gmail.com</email>
        </contrib>
      </contrib-group>
      <pub-date publication-format="electronic" date-type="pub" iso-8601-date="2022-12-23">
        <day>23</day>
        <month>12</month>
        <year>2022</year>
      </pub-date>
      <volume>15</volume>
      <issue>3.3</issue>
      <fpage>295</fpage>
      <lpage>299</lpage>
      <abstract xml:lang="en">
        <p>Several deposition protocols to obtain epitaxial VO2 films from metallic vanadium and VO2 targets are compared. Films obtained from VO2 target showed much smoother and droplet free surface compared to those prepared from V target. The samples prepared from oxide target in average showed larger middle IR reflection of 55–67% in conducting state compared to ~ 56% for samples obtained from metal V target.</p>
      </abstract>
      <kwd-group xml:lang="en">
        <kwd>vanadium dioxide</kwd>
        <kwd>metal-to-isolator transition</kwd>
        <kwd>pulsed laser deposition</kwd>
      </kwd-group>
    </article-meta>
  </front>
</article>
