St. Petersburg Polytechnic University Journal: Physics and Mathematics

Научно-технические ведомости СПбГПУ. Физико-математические науки

2304-9782, 2618-8686, 2405-7223

10.18721/JPM.153.355

Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

Физические свойства GaN/InGaN нитевидных нанокристаллов выращенных методом МПЭ с плазменной активацией на кремнии

Bondarenko

Dariya

bondarenko.dariya.spb@gmail.com Gridchin

Vladislav

gridchinvo@gmail.com Kotlyar

Konstantin

konstantin21kt@gmail.com

0000-0002-4894-6503

Baranov

Artem I.

baranov_art@spbau.ru

0000-0002-3503-7458

Maksimova

Alina A.

deer.blackgreen@yandex.ru Reznik

Rodion

moment92@mail.ru Cirlin

George

george.cirlin@mail.ru

Alferov University St. Petersburg Electrotechnical University "LETI"

23 12 2022

15 3.3 281 284

The paper presents an approach to growth of GaN nanowires with thick core-shell InGaN insertions with a high indium content for creation of LED structure. The study of the electrical properties shows typical diode dependence. The results obtained can make a significant contribution to the development of light emitting diodes on silicon substrates.

micro light-emitting diodes molecular beam epitaxy GaN/InGaN nanowires silicon substrates thick core-shell InGaN insertions