A genetic algorithm was employed to optimize the Si doping profile of luminescence InGaN-based heterostructures. It was shown that, in the optimized structure, a ‘parasitic’ luminescence from GaN barrier layers could be suppressed while the efficiency remained the same as that of the best uniformly doped structure. Moreover, the optimized structure had a 2.6 times lower total Si concentration, which could be beneficial in terms of crystal quality of the grown layers.