Time dynamics of photoluminescence intensity was studied in InGaAsSb/AlGaAsSb quantum wells with different compositions of the barrier solid solution. The charge carrier capture time in quantum wells, the energy relaxation times, the lifetime related to resonant Auger recombination were estimated. It was shown that under certain design of nanostructures the resonant Auger recombination can be observed. The influence of temperature and structure design on the Auger recombination rate is discussed.